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REFERENCE LINKING PLATFORM OF KOREA S&T JOURNALS
> Journal Vol & Issue
Journal of the Microelectronics and Packaging Society
Journal Basic Information
Journal DOI :
The Korean Microelectronics and Packaging Society
Editor in Chief :
Volume & Issues
Volume 14, Issue 4 - Dec 2007
Volume 14, Issue 3 - Sep 2007
Volume 14, Issue 2 - Jun 2007
Volume 14, Issue 1 - Mar 2007
Selecting the target year
Fabrication Process and CTQ Analysis of Organic Solderability Preservatives(OSP) Finish on Cu Pad for SMT
Lee, Hyo-Soo ; Yi, Min-Su ;
Journal of the Microelectronics and Packaging Society, volume 14, issue 1, 2007, Pages 1~9
OSP(organic solderability preservatives) finish has been considered as a very effective process for substituting the metal surface treatment of Ni/Au finish because of lower cost, interface property and environmental issue of OSP finish. However, the discoloration of OSP layer is formed during assembly process consisting of various steps of temperature. The causes of discoloration and the characterization of solder joint were investigated with a degree of discoloration and the assembly process of OSP finished products, which was also compared statistically with that of conventional Ni/Au finished products. As the results, the solution of process trouble for OSP finished products is able to be offered.
Development of Inverter for Improvement of Low Temperature Operation of LCD Backlight using Flat Fluorescent Lamp (FFL)
Hur, Jeong-Wook ; Lim, Sung-Kyoo ;
Journal of the Microelectronics and Packaging Society, volume 14, issue 1, 2007, Pages 11~17
The CCFLs, EEFLs and FFLs use mercury and the operating conditions are different at warm or cold temperature. At start of operation, there may exist a possibility of inhomogeneous operation of lamps or channels of FFL to the very low vapor pressure of mercury at low temperature. In this paper, an inverter with level control block (LCB) was developed to drive LCD backlight using FFL stably at low temperature range. The operation of FFL backlight at
was successfully demonstrated by developing inverter with LCB under 130 Watt of power consumption.
Ultrasonic Bonding of Au Flip Chip Bump for CMOS Image Sensor
Koo, Ja-Myeong ; Moon, Jung-Hoon ; Jung, Seung-Boo ;
Journal of the Microelectronics and Packaging Society, volume 14, issue 1, 2007, Pages 19~26
This study was focused on the feasibility of ultrasonic bonding of Au flip chip bumps for a practical complementary metal oxide semiconductor (CMOS) image sensor with electroplated Au substrate. The ultrasonic bonding was carried out with different bonding pressures and times after the atmospheric pressure plasma cleaning, and then the die shear test was performed to optimize the ultrasonic bonding parameters. The bonding pressure and time strongly affected the bonding strength of the bumps. The Au flip chip bumps were successfully bonded with the electroplated Au substrate at room temperature, and the bonding strength reached approximate 73 MPa under the optimum conditions.
Electrical Properties of PVP Gate Insulation Film on Polyethersulfone(PES) and Glass Substrates
Shin, Ik-Sup ; Gong, Su-Cheol ; Lim, Hun-Seoung ; Park, Hyung-Ho ; Chang, Ho-Jung ;
Journal of the Microelectronics and Packaging Society, volume 14, issue 1, 2007, Pages 27~31
The cpapcitors with MIM(metal-insulator-metal) structures using PVP gate insulation films were prepared for the application of flexible organic thin film transistors (OTFT). The co-polymer organic insulation films were synthesized by using PVP(poly-4-vinylphenol) as a solute and PGMEA(propylene glycol monomethyl ether acetate) as a solvent. The cross-linked PVP insulation films were also prepared by addition of poly(melamine-co-formaldehyde) as thermal hardener. The leakage current of the cross- linked PVP films was found to be about 1.3 nA on Al/PES(polyethersulfone) substrate, whereas, on ITO/ glass substrate was about 27.5 nA indicating improvement of the leakage current at Al/PES substrates. Also, the capacitances of all prepared samples on ITO/glass and Al/PES substrates w ere ranged from 1.0 to
, showing very similar result with the calculated capacitance values.
Failure in the COG Joint Using Non-Conductive Adhesive and Polymer Bumps
Ahn, Kyeong-Soo ; Kim, Young-Ho ;
Journal of the Microelectronics and Packaging Society, volume 14, issue 1, 2007, Pages 33~38
We studied a bonding at low temperature using polymer bump and Non-Conductive Adhesive (NCA), and studied the reliability of the polymer bump/Al pad joints. The polymer bumps were formed on oxidized Si substrates by photolithography process, and the thin film metals were formed on the polymer bumps using DC magnetron sputtering. The substrate used was AL metallized glass. The polymer bump and Al metallized glass substrates were joined together at
under various pressure. Two NCAs were applied during joining. Thermal cycling test (
, cycle/30 min) was carried out up to 2000 cycles to evaluate the reliability of the joints. The bondability was evaluated by measuring the contact resistance of the joints through the four point probe method, and the joints were observed by Scanning Electron Microscope (SEM). The contact resistance of the joints was
before the reliability test. The joints of the polymer bump/Al pad were damaged by NCA filler particles under pressure above 200 MPa. After reliability test, some joints were electrically failed since thinner metal layers deposited at the edge of bumps were disconnected.
Interfacial fracture Energy between Electroless Plated Ni film and Polyimide for Flexible PCB Applications
Min, Kyoung-Jin ; Park, Sung-Cheol ; Lee, Jee-Jeong ; Lee, Kyu-Hwan ; Lee, Gun-Hwan ; Park, Young-Bae ;
Journal of the Microelectronics and Packaging Society, volume 14, issue 1, 2007, Pages 39~47
It is investigated how KOH and Rthylenediamine(EDA) treatment conditions on Polyimide film surface affect the interfacial fracture energy between electroless plated Ni and Polyimide film by
peel test. Estimated values of interfacial fracture energy were 24.5 g/mm and 33.3 g/mm for the KOH treatment times under 1 and 5 minutes, respectively, while, those were 31.6 g/mm and 22.3 g/mm for EDA treatment times under 1 and 5 minutes, respectively. Interfacial bonding between electroless plated Ni and Polyimide seems to be dominated by chemical bonding effect rather than mechanical interlocking effect. It is found that chemical treatment produces carboxyl and mine functional groups which are closely related the interfacial bonding mechanism. Finally, it is speculated that interfacial fracture energy seems to be controlled by O=C-O bonding near cohesive failure region.
I-V Characteristics of a Methanol Sensor for Direct Methanol fUel Cell(DMFC) as a Function of Deposited Platinum(Pt) Thickness
Yang, Jin-Seok ; Kim, Seong-Il ; Kim, Chun-Keun ; Park, Jung-Ho ;
Journal of the Microelectronics and Packaging Society, volume 14, issue 1, 2007, Pages 49~53
The direct methanol fuel cell (DMFC) is a promising power source for portable applications due to many advantages such as simple construction, compact design, high energy density, and relatively high energy-conversion efficiency. In this work, an electrochemical methanol sensor for monitoring the methanol concentration in direct methanol fuel cells was fabricated using a thin composite nafion membrane as the electrolyte. We have analyzed the I-V characteristic of the fabricated methanol sensor as a function of methanol concentration, catalyst electrode and platinum(Pt) thickness. The fabricated sensor was analyzed by I-V measurement with various methanol concentration. When we measured the sensor characteristics with 10nm Pt and at 1V, the current value was
for three methanol concentration of 1M, 2M and 3M, respectively. When the methanol concentration was fixed at 2M, the current value of the fabricated device with Pt layers of 5, 10 and 15 nm thickness was
, respectively. These results lead us to the conclusion that when the methanol concentration increases, the output current increases and when the catalyst electrode become thinner, the current increase more. It showed that, the thinner the catalyst electrode, the more electrochemistry become activation.
The Fabrication of Nickel-Diamond Composite Coating by Electroplating Method
Moon, Yun-Sung ; Lee, Jae-Ho ; Oh, Tae-Sung ; Byun, Ji-Young ;
Journal of the Microelectronics and Packaging Society, volume 14, issue 1, 2007, Pages 55~60
The codeposition behavior of submicron sized diamond with nickel from nickel electrolytes has been investigated. Electroplating of diamond dispersed nickel composites was carried out on a rotating disk electrode (RDE). The effects of current type and current density on the electrodeposited Ni-diamond composite coating were investigated. The effects of surfactants on the composite coating were also investigated. The hardness of coating was measured with varying electroplating conditions using Micro Vickers. As diamond was incorporated into the coating, the hardness of coating as well as the wear resistance was improved. The hardness of the coating was increased as much as 100% and the wear resistance was improved as much as 27%. The hardness of composite coating layer increased slightly at the diamond content of above 20 gpl.
RF Plasma Treatment Conditions on Interfacial Adhesion Energy Between Cu and ALD
Thin Films for Embedded PCB Applications
Park, Sung-Cheol ; Lee, Jang-Hee ; Lee, Jung-Won ; Lee, In-Hyung ; Lee, Seung-Eun ; Song, Byoung-Ikg ; Chung, Yul-Kyo ; Park, Young-Bae ;
Journal of the Microelectronics and Packaging Society, volume 14, issue 1, 2007, Pages 61~68
Interfacial fracture energy(
thin film deposited by Atomic Layer Deposition(ALD) and sputter deposited Cu electrode for embedded PCB applications is measured from a
peel test. While the interfacial fracture energy of
is very poor, Cr adhesion layer increases the interfacial fracture energy to
RF plasma power density of
, which seems to come from the enhancement of the mechanical interlocking and Cr-O chemical bonding effects.