Go to the main menu
Skip to content
Go to bottom
REFERENCE LINKING PLATFORM OF KOREA S&T JOURNALS
search word
HOME
>
Journal Browse
>
About Journal
> Journal Vol & Issue
Journal of the Microelectronics and Packaging Society
Journal Basic Information
pISSN :
1226-9360
eISSN :
2287-7525
Journal DOI :
10.6117/kmeps
Frequency :
Others
Publisher:
The Korean Microelectronics and Packaging Society
Editor in Chief :
Seung-Boo Jung
Volume & Issues
Volume 15, Issue 4 - Dec 2008
Volume 15, Issue 3 - Sep 2008
Volume 15, Issue 2 - Jun 2008
Volume 15, Issue 1 - Mar 2008
Selecting the target year
2017
2016
2015
2014
2013
2012
2011
2010
2009
2008
2007
2006
2005
2004
2003
2002
2001
2000
1999
1998
1997
1996
1995
1994
All
1
Reflow of Sn Solder Bumps using Rapid Thermal Annealing(RTA) method and Intermetallic Formation
Yang, Ju-Heon ; Cho, Hae-Young ; Kim, Young-Ho ;
Journal of the Microelectronics and Packaging Society, volume 15, issue 4, 2008, Pages 1~7
Abstract
We studied a growth behavior of Intermetallic compounds(IMCs) during solder bumping with two reflow methods. Ti(50 nm), Cu(
), Au(50 nm) and Ti(50 nm) thin films were deposited on
/Si wafer using the DC magnetron sputtering system as the under bump metallization(UBM). And the
thick Cu bumps and
thick Sn bumps were fabricated on UBM by electroplating. Sn bumps were reflowed in RTA(Rapid Thermal Annealing) system and convection reflow oven. When RTA system was used, reflow was possible without using flux and IMC thickness formed in the solder interface was thinner than that of a convectional method.
2
Microstructure and Contact Resistance of the Au-Sn Flip-Chip Joints Processed by Electrodeposition
Kim, S.K. ; Oh, T.S. ;
Journal of the Microelectronics and Packaging Society, volume 15, issue 4, 2008, Pages 9~15
Abstract
Microstructure and contact resistance of the Au-Sn solder joints were characterized after flip-chip bonding of the Au/Sn bumps processed by successive electrodeposition of Au and Sn. Microstructure of the Au-Sn solder joints, formed by flip-chip bonding at
for 30 sec, was composed of the
+AuSn lamellar structure. The interlamellar spacing of the
+AuSn structure increased by reflowing at
for 3 min after flip-chip bonding. While the Au-Sn solder joints formed by flip-chip bonding at
for 30 sec exhibited an average contact resistance of 15.6
/bump, the Au-Sn solder joints reflowed at
for 3 min after flip-chip bonding possessed an average contact resistance of 15.0
/bump.
3
Study on the Intermetallic Compound Growth and Interfacial Adhesion Energy of Cu Pillar Bump
Lim, Gi-Tae ; Kim, Byoung-Joon ; Lee, Ki-Wook ; Lee, Min-Jae ; Joo, Young-Chang ; Park, Young-Bae ;
Journal of the Microelectronics and Packaging Society, volume 15, issue 4, 2008, Pages 17~24
Abstract
Thermal annealing and electromigration test were performed at
and
conditions, respectively, in order to compare the growth kinetics of intermetallic compound(IMC) in Cu pillar bump. The quantitative interfacial adhesion energy with annealing was measured by using four-point bending strength test in order to assess the effect of IMC growth on the mechanical reliability of Cu pillar bump. Only
was observed in the Cu pillar/Sn interface after reflow. However,
formed and grew at Cu pillar/
interface with increasing annealing and stressing time. The growth kinetics of total(
) IMC changed when all Sn phases in Cu pillar bump were exhausted. The complete consumption time of Sn phase in electromigration condition was faster than that in annealing condition. The quantitative interfacial adhesion energy after 24h at
was
while it was
before annealing. Therefore, the growth of IMC seem to strongly affect the mechanical reliability of Cu pillar bump.
4
Reliability of Multiple Oxides Integrated with thin
gate Dielectric on Thick
Layers
Lee, Tae-Ho ; Lee, B.H. ; Kang, C.Y. ; Choi, R. ; Lee, Jack-C. ;
Journal of the Microelectronics and Packaging Society, volume 15, issue 4, 2008, Pages 25~29
Abstract
Reliability and performance in metal gate/high-k device with multiple gate dielectrics were investigated. MOSFETs with a thin
layer on a thermal Si02 dielectric as gate dielectrics exhibit excellent mobility and low interface trap density. However, the distribution of threshold voltages of
stack devices were wider than those of
and
single layer devices due to the penetration of Hf and/or intermixing of
with underlying
. The results of TZDB and SILC characteristics suggested that a certain portion of
layer reacted with the underlying thick
layer, which in turn affected the reliability characteristics.
5
Cap Formation Process for MEMS Packages using Cu/Sn Rim Bonding
Kim, S.K. ; Oh, T.S. ; Moon, J.T. ;
Journal of the Microelectronics and Packaging Society, volume 15, issue 4, 2008, Pages 31~39
Abstract
To develop the MEMS cap bonding process without cavity formation, we electroplated Cu/Sn rim structures and measured the bonding characteristics for the Cu/Sn rims of
width. As the effective device-mounting area ratio decreased and the failure strength ratio increased for wider Cu/Sn rim, these two properties were estimated to be optimized for the Cu/Sn rim with 150
width. Complete bonding was accomplished at the whole interfaces of the Cu/Sn packages with the rim widths of 25
and 50
. However, voids were observed locally at the interfaces with the rim widths larger than 100
. Such voids were formed by local non-contact between the upper and lower rims due to the surface roughness of the electroplated Sn.
6
Fabrication Process of the Thermoelectric Module Composed of the Bi-Te and the Bi-Sb-Te Nanowires
Kim, Min-Young ; Lim, Su-Kyum ; Oh, Tae-Sung ;
Journal of the Microelectronics and Packaging Society, volume 15, issue 4, 2008, Pages 41~49
Abstract
Thermoelectric properties of the n-type Bi-Te and the p-type Bi-Sb-Te films were measured and the growth behaviors of the electrodeposited Bi-Te and Bi-Sb-Te nanowires were characterized. Filling ratios of 81% and 77% were obtained for electrodeposition of the Bi-Te and the Bi-Sb-Te nanowires, respectively, into the nano pores of 200 nm-diameter of an alumina template. A thermoelectric module, composed of the Bi-Te nanowires and the Bi-Sb-Te nanowires was processed by electrodeposition, and a resistance value of
was measured between the Ni electrodes formed on the Bi-Te nanowires and the Bi-Sb-Te nanowires of the module.
7
Wettability Evaluation of Sn-0.3Ag-0.7Cu Solder Alloy with Different Flux Activity and Indium Addition
Yu, A-Mi ; Kim, Jun-Ki ; Kim, Mok-Soon ; Hyun, Chang-Yong ; Lee, Jong-Hyun ;
Journal of the Microelectronics and Packaging Society, volume 15, issue 4, 2008, Pages 51~57
Abstract
In this paper, wetting and interfacial reaction properties for low Ag containing Sn-Ag-Cu Pb-free solder alloy, i.e., Sn-0.3Ag-0.7Cu were investigated and compared with those of Sn-1.0Ag-0.5Cu and Sn-3.0Ag-0.5Cu. Melting behavior and stress-strain curves of some Sn-xAg-xCu alloys were also measured using a differential scanning calorimeter(DSC) and a tensile test machine, respectively. In order to enhance insufficient wetting properties of Sn-0.3Ag-0.7Cu alloy, the improvement of wetting properties were analyzed by applying fluxes containing higher content of halide or indium adding of 0.2wt.% into the solder alloy. It was concluded that the small addition of indium is more effective for the improvement of wettability in low temperature range of
than applying flux containing higher content of halide.
8
Preparation and Characterization of White Polymer Light Emitting Diodes using PFO:MEH-PPV
Shin, Sang-Baie ; Gong, Su-Choel ; Park, Hyung-Ho ; Jeon, Hyeong-Tag ; Chang, Ho-Jung ;
Journal of the Microelectronics and Packaging Society, volume 15, issue 4, 2008, Pages 59~64
Abstract
In this paper, white polymer light emitting diodes(WPLEDs) were fabricated and investigated the electrical and optical properties for the prepared devices. ITO(indium tin oxide) and PEDOT:PSS [poly(3,4-ethylenedioxythiophene):poly(styrene sulfolnate)] as anode and hole injection materials, PFO [poly(9,9-dioctylfluorene)] and MEH-PPV [poly(2-methoxy-5(2-ethylhe xoxy)-1,4-phenylenevinyle)] were used as the light emitting host and guest materials, respectively. The LiF(lithium flouride) and Al(aluminum) were used electron injection materials and cathode materials. Finally, the WPLED with structure of ITO/PEDOT:PSS/PFO:MEH-PPV/LiF/Al was fabricated. The prepared WPLED showed white emission with CIE coordinates of (x=0.36, y=0.35) at the applied voltage of 9V. The maximum current density and luminance were about
at 13V, respectively. And the maximum current efficiency was 0.37 cd/A at
in luminance.
9
Mechanical reliability of Sn-37Pb BGA solder joints with high-speed shear test
Jang, Jin-Kyu ; Ha, Sang-Su ; Ha, Sang-Ok ; Lee, Jong-Gun ; Moon, Jung-Tak ; Park, Jai-Hyun ; Seo, Won-Chan ; Jung, Seung-Boo ;
Journal of the Microelectronics and Packaging Society, volume 15, issue 4, 2008, Pages 65~70
Abstract
The mechanical shear strength of BGA(Ball Grid Array) solder joints under high impact loading was investigated. The Sn-37Pb solder balls with a diameter of
were placed on the pads of FR-4 substrates with ENIG(Electroless Nickel Immersion Gold) surface treatment and reflowed. For the High Temperature Storage(HTS) test, the samples were aged a constant testing temperature of
for up to 250h. After the HTS test, high speed shear tests with various shear speed of 0.01, 0.1, 1, 3 m/s were conducted.
intermetallic compound(IMC) layer was observed at the solder/Ni-P interface and thickness of IMC was increased with aging process. The shear strength increased with increasing shear speed. The fracture surfaces of solder joints showed various fracture modes dependent on shear speed and aging time. Fracture mode was changed from ductile fracture to brittle fracture with increasing shear speed.
10
The Effects of Electroplating Parameters on the Mechanical Properties of Nickel-Iron Alloy Electrodeposits
Ko, Yeong-Kwon ; Yim, Tai-Hong ; Lee, Jae-Ho ;
Journal of the Microelectronics and Packaging Society, volume 15, issue 4, 2008, Pages 71~76
Abstract
The mechanical properties of Ni-Fe alloy were varied with the current type, current density and bath conditions such as concentrations and temperature. The effect of electroplating parameters on the surface hardness, mechanical strength, residual stress and wear properties were investigated. The mechanical properties of electrodeposits with PC plating is superior to those with DC plating. Ni-Fe electrodeposits with PC has approximately 50% lower residual stress than that of DC plating. The tensile strength of PC electroplated specimen was 15% higher than that of DC electroplated specimen. The wear resistance of PC specimen was 30% improved relative to that of DC specimen.
11
Experimental and Numerical Study on Board Level Impact Test of SnPb and SnAgCu BGA Assembly Packaging
Lim, Ji-Yeon ; Jang, Dong-Young ; Ahn, Hyo-Sok ;
Journal of the Microelectronics and Packaging Society, volume 15, issue 4, 2008, Pages 77~86
Abstract
The reliability of leaded and lead-free solders of BGA type packages on a printed circuit board was investigated by employing the standard drop test and 4-point bending test. Tested solder joints were examined by optical microscopy to identify associated failure mode. Three-dimensional finite element analysis(FEM) with ANSYS Workbench v.11 was carried out to understand the mechanical behavior of solder joints under the influence of bending or drop impact. The results of numerical analysis are in good agreement with those obtained by experiments. Packages in the center of the PCB experienced higher stress than those in the perimeter of the PCB. The solder joints located in the outermost comer of the package suffered from higher stress than those located in center region. In both drop and bending impact tests, the lead-free solder showed better performances than the leaded solders. The numerical analysis results indicated that stress and strain behavior of solder joint were dependent on various effective parameters.
12
Effects of Zn Surface Finish on the Solder Joint Microstructure and the Impact Reliability
Jee, Young-Kun ; Yu, Jin ;
Journal of the Microelectronics and Packaging Society, volume 15, issue 4, 2008, Pages 87~92
Abstract
The interface microstructure of Sn-3.5Ag/Cu joint was modified by electroplating varying amount of Zn on Cu UBM. As the amount of Zn dissolved in Sn-3.5Ag solder increased with the electroplating Zn thickness, Cu-Sn IMCs such as
and
were replaced by Zn-containing IMCs such as
and
, which increased the drop reliability of solder joints significantly. When the amount of Zn dissolved in solder was about 3.8wt%, drop resistance was best due to the effective suppression of Cu-Sn IMC and voids at the interface.
13
The Design of Oxide Module for High Temperature Thermoelectric Power Generation
Park, Jong-Won ; Yoon, Sun-Ho ; Cha, Jeong-Eui ; Choi, Seung-Chul ;
Journal of the Microelectronics and Packaging Society, volume 15, issue 4, 2008, Pages 93~100
Abstract
The one and two pair of oxide modules for high temperature thermoelectric power generation were fabricated with
(p-type) and
(n-type) on
substrate. For the optimizing of the design process, contact resistance was derived from the results of the one pair modules, and then the resistance of two pair modules were calculated to use the derived data. Those values were compared with the measured values for the optimizing of this design process. The resistance of calculated and measured two pairs modules was 0.956
and 1.110 Q
=833 K, respectively, the difference of resistance was about 0.15
. From the result, proposed design process is effective for high temperature thermoelectric oxide modules fabrication.
14
gas sensing properties of
thin films dopped with Pd and CNT
Kim, H.K. ; Lee, R.Y. ;
Journal of the Microelectronics and Packaging Society, volume 15, issue 4, 2008, Pages 101~106
Abstract
The
thin films doped with Pd and CNT as
gas sensor were prepared by spin coating and then the
gas response of these films were evaluated under
concentration and operating temperature of
. It was found that the sensor resistance was increased with
exposure and
concentration. The 3wt% Pd doped sample showed a sensitivity of 26.5 which was 10 times higher than that of pure
. And also the sensitivity of CNT doped sample increased with CNT content and it had 72 when 0.225 wt% of CNT was added under 5ppm
concentration.