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REFERENCE LINKING PLATFORM OF KOREA S&T JOURNALS
> Journal Vol & Issue
Journal of the Microelectronics and Packaging Society
Journal Basic Information
Journal DOI :
The Korean Microelectronics and Packaging Society
Editor in Chief :
Volume & Issues
Volume 18, Issue 4 - Dec 2011
Volume 18, Issue 3 - Sep 2011
Volume 18, Issue 2 - Aug 2011
Volume 18, Issue 1 - Mar 2011
Selecting the target year
Joining of Ceramic and Metal using Active Metal Brazing
Kee, Se-Ho ; Xu, Zengfeng ; Jung, Jae-Pil ; Kim, Won-Joong ;
Journal of the Microelectronics and Packaging Society, volume 18, issue 3, 2011, Pages 1~7
Active brazing of ceramic to metal is reviewed in this paper. As one of the key aspect in joint techniques, active brazing has been developed to simplify the manufacturing procedure of brazed joints between ceramic and metal. The active filler metal includes Ag-Cu-Ti series, Cu-Ti series, Co-Ti series and so on. The active filler metal which supplies the chemical bonds between ceramic and metal, enhances the wetting of filler metal on ceramic surface and eliminates the need for metallization treatments. The residual stress caused by difference of coefficient of thermal expansion between ceramic and metal, holds a direct influence on the bonding strength and even results in a fracture. Good joints of ceramic to metal promote the miniaturization and simplicity of electronic components with multifunction.
Nano-Composite Solder Technology for the Improvement of Solder Joint Properties
Ki, Won-Myoung ; Lee, Young-Kyu ; Lee, Chang-Woo ; Yoo, Se-Hoon ;
Journal of the Microelectronics and Packaging Society, volume 18, issue 3, 2011, Pages 9~17
Nano-composite solders have been studied to improve the properties of Pb-free solder joints. The nanoparticles in the composite solders were carbon nanotubes(CNTs), metals (Ag, Ni, Cr, etc.), ceramics (SiC,
, etc.). To fabricate the nano-composite solders, mechanical mixing methods and in-situ fabrication method has been used for well-dispersed nano phase. The characteristic properties of the nano-composite solders were high creep resistance, low undercooling, low IMC growth rate and fine microstructures. More researches on the nano-composite solders are required to improve the processibility and the reliability of the nano-composite solder joints.
Electrode Properties of Li-ion Batteries using
-based Composite Nanowires
An, Geon-Hyoung ; Ahn, Hyo-Jin ;
Journal of the Microelectronics and Packaging Society, volume 18, issue 3, 2011, Pages 19~24
we successfully synthesized
-Ag composite nanowires via an electrospinning method and investigated the relationship between their electrochemical properties and structures by means of field emission scanning electron microscopy (FESEM), transmission electron microscopy (TEM), X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS), and cycler. It is shown that the
-Ag composite nanowires exhibit superior electrochemical properties when compared to the single
nanoparticles (P25, Degussa). Therefore, the results indicate that the introduction of Ag nanophases within the electrospun
nanowires could be improved the capacitance and cycleability of electrodes in Li-ion batteries.
Fabrication of R-plane Sapphire wafer for Nonpolar a-plane GaN
Kang, Jin-Ki ; Kim, Jung-Hwan ; Kim, Young-Jin ;
Journal of the Microelectronics and Packaging Society, volume 18, issue 3, 2011, Pages 25~32
We have studied on the slicing and polishing processes of R-plane sapphire wafers for the substrates of UHB nonpolar a-plane GaN LED. The fabrication conditions of the R-plane and c-plane wafers were influenced by the large anisotropic properties (mechanical properties) of the sapphire. The slicing process was more affected by the anisotropic properties of R-plane than the polishing process. When the slicing direction was
to the a-flat, the slicing time was shorter and the quality of as-slicing wafers was better than the slicing direction of normal to the a-flat. The MRR(Material removal rate) of mechanical polishing processes such as lapping and DMP(Diamond mechanical polishing) did not show significant differences between the R-plane and c-plane. The MRR of the c-plane was about two times higher than that of R-planes at the CMP(Chemical mechanical polishing) process due to the formation of hydrolysis reaction layers on the surface of the c-plane.
Effect of Cl Content on Interface Characteristics of Isotropic Conductive Adhesives/Sn Plating Interface
Kim, Keun-Soo ; Lee, Ki-Ju ; Suganuma, Katsuaki ; Huh, Seok-Hwan ;
Journal of the Microelectronics and Packaging Society, volume 18, issue 3, 2011, Pages 33~37
In this study, the degradation mechanism of mounted chip resistors with Ag-epoxy isotropic conductive adhesives (ICAs) under the humidity exposure (
/85%RH) was examined by electrical resistance change and microstructural study. The effect of the chloride content in Ag-epoxy ICA on joint stability was also examined. The increasing range of the electrical resistance in the typical ICA joint was greater than that in the low Cl content ICA joint. In the case of the typical ICA joint, Sn oxides such as SnO,
, and Sn-Cl-O were formed inhomogeneously on the surface of the Sn plating during the
/85%RH test. In contrast, no Sn-Cl-O was found in the low Cl content ICA joint during the
/85%RH. It is suggested that Cl in Ag-epoxy ICA accelerate the electrical degradation of Sn plated chip components joined with Ag-epoxy ICA.
Effect of Cavity Material on the Q-Factor Measurement of Microwave Dielectric Materials
Park, Jae-Hwan ; Park, Jae-Gwan ;
Journal of the Microelectronics and Packaging Society, volume 18, issue 3, 2011, Pages 39~43
Effects of cavity material on the Q-factor measurement of microwave dielectric materials were studied by HFSS simulation and the measurements using metal cavity.
mode resonant frequency was determined from the electric and magnetic field patterns and the loaded Q-factor was calculated from 3dB bandwidth of
spectrum. When the cavity metal materials were Cu, SUS and Au cavity, the level of Q-factor was similar. However, Q-factor was significantly decreased when the cavity metal material was CuO. The Q-factor measurements of dielectric resonator by network analyzer using various metal cavity exhibits consistent behavior.
The Effect of Reliability Test on Failure mode for Flip-Chip BGA C4 bump
Huh, Seok-Hwan ; Kim, Kang-Dong ; Jang, Jung-Soon ;
Journal of the Microelectronics and Packaging Society, volume 18, issue 3, 2011, Pages 45~52
It is known that test methods to evaluate solder joint reliability are die shock test, die shear test, 3points bending test, and thermal shock test. The present study investigated the effects of failure mode on 3 types (as-reflowed,
/85%RH treatment, and
/10hr aging) of solder joints for flip-chip BGA package by using various test methods. The test methods and configurations are reported in detail, i.e. die shock, die shear, 3points bending, and thermal shock test. We focus on the failure mode of solder joints under various tests. The test results indicate that die shock and die shear test method can reveal brittle fracture in flip-chip ball grid array (FCBGA) packages with higher sensitivity.
Self-Assembling Adhesive Bonding by Using Fusible Alloy Paste for Microelectronics Packaging
Yasuda, Kiyokazu ;
Journal of the Microelectronics and Packaging Society, volume 18, issue 3, 2011, Pages 53~57
In the modern packaging technologies highly condensed metal interconnects are typically formed by highcost processes. These methods inevitably require the precise controls of mutually dependant process parameters, which usually cause the difficulty of the change in the layout design for interconnects of chip to-chip, or chip-to-substrate. In order to overcome these problems, the unique concept and methodology of self-assembly even in micro-meter scale were developed. In this report we focus on the factors which influenced the self-formed bumps by analyzing the phenomenon experimentally. In case of RMA flux, homogenous pattern was obtained in both plain surface and cross-section surface observation. By using RA flux, the phenomena were accelerated although the self-formtion results was inhomogenous. With ussage of moderate RA flux, reaction rate of the self-formation was accelerated with homogeneous pattern.
The Optimization of FCBGA thermal Design by Micro Pattern Structure
Lee, Tae-Kyoung ; Kim, Dong-Min ; Jun, Ho-In ; Ha, Sang-Won ; Jeong, Myung-Yung ;
Journal of the Microelectronics and Packaging Society, volume 18, issue 3, 2011, Pages 59~65
According to the trends of electronic package to be smaller, thinner and more integrative, Flip Chip Ball Grid Array (FCBGA) become more used for mobile phone. However, the flip chip necessarily generate the heat by the electrical resistance and generated heat is increased due to reduced distribution area of the heat in accordance with the miniaturization trend of the package. Thermal issues can result in problems of devices that are sensitive to temperature and stress. Then the heat can generate problems to the system. In this paper, in order to improve the thermal issues of FCBGA, thermal characteristics of FCBGA was analyzed qualitatively by using the general heat transfer module of Comsol 3.5a and In order to solve thermal issues, flip chip with new micro structure is proposed by the simulation. and also by comparing existing model and analyzing variables such as pitch, height of the pattern and shape of the heat spreader, the improvement of heat dissipation characteristics about 18% was confirmed.
Electromigration and Thermomigration in Flip-Chip Joints in a High Wiring Density Semiconductor Package
Yamanaka, Kimihiro ;
Journal of the Microelectronics and Packaging Society, volume 18, issue 3, 2011, Pages 67~74
Keys to high wiring density semiconductor packages include flip-chip bonding and build-up substrate technologies. The current issues are the establishment of a fine pitch flip-chip bonding technology and a low coefficient of thermal expansion (CTE) substrate technology. In particular, electromigration and thermomigration in fine pitch flipchip joints have been recognized as a major reliability issue. In this paper, electromigration and thermomigration in Cu/Sn-3Ag-0.5Cu (SAC305)/Cu flip-chip joints and electromigration in Cu/In/Cu flip chip joints are investigated. In the electromigration test, a large electromigration void nucleation at the cathode, large growth of intermetallic compounds (IMCs) at the anode, a unique solder bump deformation towards the cathode, and the significantly prolonged electromigration lifetime with the underfill were observed in both types of joints. In addition, the effects of crystallographic orientation of Sn on electromigration were observed in the Cu/SAC305/Cu joints. In the thermomigration test, Cu dissolution was accelerated on the hot side, and formation of IMCs was enhanced on the cold side at a thermal gradient of about
/cm, which was lower than previously reported. The rate of Cu atom migration was found comparable to that of electromigration under current conditions.