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REFERENCE LINKING PLATFORM OF KOREA S&T JOURNALS
> Journal Vol & Issue
Journal of the Microelectronics and Packaging Society
Journal Basic Information
Journal DOI :
The Korean Microelectronics and Packaging Society
Editor in Chief :
Volume & Issues
Volume 21, Issue 4 - Dec 2014
Volume 21, Issue 3 - Sep 2014
Volume 21, Issue 2 - Jun 2014
Volume 21, Issue 1 - Mar 2014
Selecting the target year
Bumpless Interconnect System for Fine-pitch Devices
Kim, Sarah Eunkyung ;
Journal of the Microelectronics and Packaging Society, volume 21, issue 3, 2014, Pages 1~6
DOI : 10.6117/kmeps.2014.21.3.001
The demand for fine-pitch devices is increasing due to an increase in I/O pin count, a reduction in power consumption, and a miniaturization of chip and package. In addition non-scalability of Cu pillar/Sn cap or Pb-free solder structure for fine-pitch interconnection leads to the development of bumpless interconnection system. Few bumpless interconnect systems such as BBUL technology, SAB technology, SAM technology, Cu-toCu thermocompression technology, and WOW`s bumpless technology using an adhesive have been reviewed in this paper: The key requirements for Cu bumpless technology are the planarization, contamination-free surface, and surface activation.
Heat Dissipation Technology of IGBT Module Package
Suh, Il-Woong ; Jung, Hoon-Sun ; Lee, Young-Ho ; Kim, Young-Hun ; Choa, Sung-Hoon ;
Journal of the Microelectronics and Packaging Society, volume 21, issue 3, 2014, Pages 7~17
DOI : 10.6117/kmeps.2014.21.3.007
Power electronics modules are semiconductor components that are widely used in airplanes, trains, automobiles, and energy generation and conversion facilities. In particular, insulated gate bipolar transistors(IGBT) have been widely utilized in high power and fast switching applications for power management including power supplies, uninterruptible power systems, and AC/DC converters. In these days, IGBT are the predominant power semiconductors for high current applications in electrical and hybrid vehicles application. In these application environments, the physical conditions are often severe with strong electric currents, high voltage, high temperature, high humidity, and vibrations. Therefore, IGBT module packages involves a number of challenges for the design engineer in terms of reliability. Thermal and thermal-mechanical management are critical for power electronics modules. The failure mechanisms that limit the number of power cycles are caused by the coefficient of thermal expansion mismatch between the materials used in the IGBT modules. All interfaces in the module could be locations for potential failures. Therefore, a proper thermal design where the temperature does not exceed an allowable limit of the devices has been a key factor in developing IGBT modules. In this paper, we discussed the effects of various package materials on heat dissipation and thermal management, as well as recent technology of the new package materials.
Nanowell Array based Sensor and Its Packaging
Lee, JuKyung ; Akira, Tsuda ; Jeong, Myung Yung ; Lee, Hea Yeon ;
Journal of the Microelectronics and Packaging Society, volume 21, issue 3, 2014, Pages 19~24
DOI : 10.6117/kmeps.2014.21.3.019
This article reviews the recent progress in nanowell array biosensors that use the label-free detection protocol, and are detected in their natural forms. These nanowell array biosensors are fabricated by nanofabrication technologies that should be useful for developing highly sensitive and selective also reproducible biosensors. Moreover, electrochemical method was selected as analysis method that has high sensitivity compared with other analysis. Finally, highly sensitive nanobiosensor was achieved by combining nanofabrication technologies and classical electrochemical method. Many examples are mentioned about the sensing performance of nanowell array biosensors will be evaluated in terms of sensitivity and detection limit compared with other micro-sized electrode without nanowell array.
Sn-Ag-Cu Solder Joint Properties on Plasma Coated Organic Surface Finishes and OSP
Lee, Tae-Young ; Kim, Kyoung-Ho ; Bang, Jung-Hwan ; Park, Nam-Sun ; Kim, Mok-Soon ; Yoo, Sehoon ;
Journal of the Microelectronics and Packaging Society, volume 21, issue 3, 2014, Pages 25~29
DOI : 10.6117/kmeps.2014.21.3.025
Plasma organic thin film for PCB surface finish is a potential replacement of the conventional PCB finishes because of environment-friendly process, high corrosion-resistance and long shelf life over 1 year. In this study, solder joint properties of the plasma organic surface finish were estimated and compared with OSP surface finish. The plasma surface finish was deposited by chemical vapor deposition from fluorine-based precursors. The thickness of the plasma organic coating was 20 nm. Sn-3.0Ag-0.5Cu (SAC305) solder was used as solder joint materials. From a salt spray test, the plasma organic coating had higher corrosion resistance than the OSP surface finish. The spreadability of SAC305 on plasma organic coating was higher than that on OSP surface finish. SEM and TEM micrographs showed that the interfacial microstructure of the plasma surface finish sample were similar to that of the OSP sample. Solder joint strength of the plasma finish sample was also similar to that of the OSP finished sample.
Light Efficiency of LED Package with TiO
Lee, Tae-Young ; Kim, Kyoung-Ho ; Kim, Mi-Song ; Ko, Eun-Soo ; Chio, Jong-Hyun ; Moon, Kyoung-Sik ; Kim, Mok-Soon ; Yoo, Sehoon ;
Journal of the Microelectronics and Packaging Society, volume 21, issue 3, 2014, Pages 31~35
DOI : 10.6117/kmeps.2014.21.3.031
-nanoparticle-dispersed silicone was applied to a LED package and the light efficiency of the LED package was evaluated in this study. The addition of
nanoparticles in silicone increased refractive index, which improved the light efficiency of the LED package. The
nanoparticles were fabricated by hydrothermal synthesis and were dispsersed by a vinyl silane coating treatment. After the silane treatment, the
nanoparticles dispersed with diameters of 10~40 nm but rod-shape
nanoparticles with lengths of 100 nm were also observed. The refractive index increased with the
concentration in silicone, while the transmittance decreased with the
concentration. The light efficient of the LED package with
+silicone encapsulant was higher than that of the LED package with no
in silicone encapsulant.
Alignment and Packaging Technology for Improving The Efficiency of The Solar Daylighting System
Kim, Taehoon ; Sheen, Byung-Han ; Jeong, Myung Yung ;
Journal of the Microelectronics and Packaging Society, volume 21, issue 3, 2014, Pages 37~41
DOI : 10.6117/kmeps.2014.21.3.037
In this work, we investigated the efficiency improvement of concave mirror based solar daylighting system that does not convert light to electricity. Total efficiency of the system is substantially affected by external environment and focusing position, alignment of reflectors, lenses. As a result of simulation, we obtained the max. efficiency in which depends on convex lens position.
Reliability of Sn-Ag-Cu Solder Joint on ENEPIG Surface Finish: 1. Effects of thickness and roughness of electroless Ni-P deposit
Huh, Seok-Hwan ; Lee, Ji-Hye ; Ham, Suk-Jin ;
Journal of the Microelectronics and Packaging Society, volume 21, issue 3, 2014, Pages 43~50
DOI : 10.6117/kmeps.2014.21.3.043
By the trends of electronic package to be smaller, thinner and more integrative, the reliability of interconnection between Si chip and printed circuit board is required. This paper reports on a study of high speed shear energy of Sn-4.0wt%Ag-0.5wt%Cu (SAC405) solder joints with different the thicknesses of electroless Ni-P deposit. A high speed shear testing of solder joints was conducted to find a relationship between the thickness of Ni-P deposit and the brittle fracture in electroless Ni-P deposit/SAC405 solder. A focused ion beam (FIB) was used to polish the cross sections to reveal details of the microstructure of the fractured pad surface with and without
vapor treatment. The high speed shear energy of SAC405 solder joint with
Ni-P deposit was found to be lower without
vapor, compared to those of over
Ni-P deposit. This could be due to the edge of solder resist in
Ni-P deposit, which provides a fracture location for the weakened shear energy of solder joints and brittle fracture in high speed shear test. With
vapor, the brittle fracture mode in high speed shear test decreased with increasing the thickness of Ni-P deposit. Then the roughness (Ra) of Ni-P deposits decreased with increasing its thickness. Thus, this gives the evidence that the decrease in roughness of Ni-P deposit for Eelectroless Ni/ Electroless Pd/ Immersion Au (ENEPIG) surface play a critical role for improving the robustness of SAC405 solder joint.
Reliability of Sn-Ag-Cu Solder Joint on ENEPIG Surface Finish: 2. Effects of time of Pd activation
Huh, Seok-Hwan ; Lee, Ji-Hye ; Ham, Suk-Jin ;
Journal of the Microelectronics and Packaging Society, volume 21, issue 3, 2014, Pages 51~56
DOI : 10.6117/kmeps.2014.21.3.051
The reliability of solder joint is significantly affected by the property of surface finish. This paper reports on a study of high speed shear energy and failure mode for Sn-4.0wt%Ag-0.5wt%Cu (SAC405) solder joints with the time of Pd activation. The nodule size of electroless Ni-P deposit increased with increasing the time of Pd activation. The roughness (Ra) of electroless Ni-P deposit decreased with increasing the time of Pd activation. Then, with
vapor, the quasi-brittle and brittle mode of SAC405 solder joint decreased with increasing the time of Pd activation. This results indicate that the increase in the Pd activation time for Electroless Ni/ Electroless Pd/ Immersion Au (ENEPIG) surface finish play a critical role for improving the robustness of SAC405 solder joint.
Effects of Synthetic Temperature and Amount of Oleylamine in Synthesis of Cu-Based Nanoparticles Using Heptyl Alcohol Solvent
Chee, Sang-Soo ; Lee, Jong-Hyun ;
Journal of the Microelectronics and Packaging Society, volume 21, issue 3, 2014, Pages 57~62
DOI : 10.6117/kmeps.2014.21.3.057
With synthesis temperature and adding amount of oleylamine, nanometer-sized Cu particles were fabricated by heptyl alcohol-based chemical synthesis. The synthetic temperature and amount of oleylamine changed excessively the shape and phase of synthesized nanoparticles. Only cubic-shaped
phase was formed at
regardless of the amount of oleylamine because of imperfect reduction reaction, representing results that the average size of
particles decreased with increasing the amount of oleylamine. In the case the synthesis at
, however, nanoparticles of irregular sphere or peanut shapes were synthesized. Moreover, the average size of nanoparticles decreased continuously and gradually with an increase of the amount of oleylamine. According to the size decrease, the synthesized
nanoparticles were also transformed into pure Cu nanoparticles.
The Effects of Cu TSV on the Thermal Conduction in 3D Stacked IC
Ma, Junsung ; Kim, Sarah Eunkyung ; Kim, Sungdong ;
Journal of the Microelectronics and Packaging Society, volume 21, issue 3, 2014, Pages 63~66
DOI : 10.6117/kmeps.2014.21.3.063
In this study, we investigated the effects of Cu TSV on the thermal management of 3D stacked IC. Combination of backside point-heating and IR microscopic measurement of the front-side temperature showed evolution of hot spots in thin Si wafers, implying 3D stacked IC is vulnerable to thermal interference between stacked layers. Cu TSV was found to be an effective heat path, resulting in larger high temperature area in TSV wafer than bare Si wafer, and could be used as an efficient thermal via in the thermal management of 3D stacked IC.
Characterization of GaN epitaxial layer grown on nano-patterned Si(111) substrate using Pt metal-mask
Kim, Jong-Ock ; Lim, Kee-Young ;
Journal of the Microelectronics and Packaging Society, volume 21, issue 3, 2014, Pages 67~71
DOI : 10.6117/kmeps.2014.21.3.067
An attempt to grow high quality GaN on silicon substrate using metal organic chemical vapor deposition (MOCVD), herein GaN epitaxial layers were grown on various Si(111) substrates. Thin Platinum layer was deposited on Si(111) substrate using sputtering, followed by thermal annealing to form Pt nano-clusters which act as masking layer during dry-etched with inductively coupled plasma-reactive ion etching to generate nano-patterned Si(111) substrate. In addition, micro-patterned Si(111) substrate with circle shape was also fabricated by using conventional photo-lithography technique. GaN epitaxial layers were subsequently grown on micro-, nano-patterned and conventional Si (111) substrate under identical growth conditions for comparison. The GaN layer grown on nano-patterned Si (111) substrate shows the lowest crack density with mirror-like surface morphology. The FWHM values of XRD rocking curve measured from symmetry (002) and asymmetry (102) planes are 576 arcsec and 828 arcsec, respectively. To corroborate an enhancement of the growth quality, the FWHM value achieved from the photoluminescence spectra also shows the lowest value (46.5 meV) as compare to other grown samples.