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REFERENCE LINKING PLATFORM OF KOREA S&T JOURNALS
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Journal of the Microelectronics and Packaging Society
Journal Basic Information
Journal DOI :
The Korean Microelectronics and Packaging Society
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Volume & Issues
Volume 6, Issue 4 - Dec 1999
Volume 6, Issue 3 - Sep 1999
Volume 6, Issue 2 - Jun 1999
Volume 6, Issue 1 - Mar 1999
Selecting the target year
Role of Crystallographic Tilt Angle of GaAs Substrate Surface on Elastic Characteristics and Crystal Quality of InGaP Epilayers
Journal of the Microelectronics and Packaging Society, volume 6, issue 1, 1999, Pages 1~10
InGaP epilayers were grown on the flat,
off GaAs substrates by organo-metallic vapor phase epitaxy, and influences of crystallographic misorientation of the substrate on the structural and optical properties such as lattice mismatch, elastic strain, lattice curvature, misfit stress, and PL intensity /line-width were investigated in this study. Material characterizations were carried out by TXRD( tripple-axis x-ray diffractometer) and low temperature (11K) PL (photoluminescence). With increase of the substrate misorientation angle (S.M.A.), the relative incorporation of Ga atoms on the substrate surface was found to be enhanced. Also, with increase of the S. M. A., the x-ray line-width of the InGaP epilayer was reduced, indicating that the crystal quality of the epilayer could be improved tilth a misoriented substrate. It was also found that the elastic accommodation of the strain-free lattice misfit was more remarkable in a misoriented sample. PL intensity increased, and PL line-width and emission wavelength decreased with the increase of S. M. A. The results conclude that the elastic characteristics and the crystal quality of the InGaP epilayer could be remarkably enhanced when the misoriented substrates were employed.
Synthesis and Characterization of Particle-filled Glass/G lass-Ceramic Composites for Microelectronic Packaging (I)
Hong, Chang-Bae ; Lee, Kyoung-Ho ;
Journal of the Microelectronics and Packaging Society, volume 6, issue 1, 1999, Pages 11~21
For microelectronic packaging application, the crystallizable glass powder in CaO-
system was mixed with various amounts of alumina inclusions (
), and its sintering behavior, crystallization behavior, and dielectric constant were examined in terms of vol% of alumina and the reaction between the alumina and the glass. Sintering of the CASB glass powder alone at
resulted in full densification (99.5%). Sintering of alumina-filled composite at
also resulted in a substantial denslfication higher than 97% of theoretical density, In this case, the maximum volume percent of alumina should be less than 40%. XRD analysis revealed that there was a partial dissolution of alumina into the glass. This alumina dissolution, however, did not show the particle growth and shape accommodation. Therefore, the sintering of both the pure glans and the alumina-filled composite was mainly achieved by the viscous flow and the redistribution of the glass. Alumina dissolution accelerated the crystallization initiation time at
and hindered the densification of the glass. Dielectric constants of both the alumina-filled glass and the glass-ceramic composites were increased with increasing alumina content and followed rule of mixture. In case of the glass-ceramic matrix composites showed relatively lower dielectric constant than the glass matrix composite. Furthermore, as alumina content increased, crystallization behavior of the glass was changed due to the reaction between the glass and the alumina. As alumina reacted with the glass matrix, the major crystallized phase was shifted from wollastonite to gehlenite. In this system, alumina dissolution strongly depended on the particle size: When the particle size of alumina was increased to 15
, no sign of dissolution was observed and the major crystallized phase was wollastonite.
Preparation of Electrolyte Film for Solid Oxide Fuel Cells by Electrophoretic Deposition
Journal of the Microelectronics and Packaging Society, volume 6, issue 1, 1999, Pages 23~29
An yttria-stabilized zirconia(YSZ) thin film on a porous NiO-YSZ substrate for an anode support type solid oxide fuel cell(SOFC) was prepared by an electrophoretic deposition(EPD). Deposition condition and film properties in order to obtain the homogeneous YSZ thin film from the EPD solution with different polarity were studied. In different case of alcohol solution, hydrogen gas was produced in aqueous solution from the electrolyte reaction under constant current above 0.138 mA /
.Its reaction generated the bubble-formed defect in the deposited film and decreased weight of the film. The homogeneous YSZ thin film was formed in alcohol solution at a constant current, 0.035 mA /
for 10 s.
Study on the Thermal Properties of the Electroless Copper Interconnect in Integrated Circuits
Journal of the Microelectronics and Packaging Society, volume 6, issue 1, 1999, Pages 31~37
In this study, the thermal property and adhesion of the electroless-deposited Cu thin film were investigated. The multilayered structure of Cu /TaN /Si was fabricated by electroless-depositing the Cu thin layer on the TaN diffusion barrier which was deposited by MOCVD on the Si substrate. The thermal stability was investigated by measuring the resistivity as post-annealing temperature for the multilayered Cu /TaN /Si specimen which was annealed at atmospheres of
and Ar gases, respectively. The adhesion strength of Cu films was evaluated by the scratch test. The adhesion of the electroless-deposited Cu film was compared with other deposition methods of thermal evaporation and sputtering. The scratch test showed that the adhesion of electroless plated Cu film on TaN was better than that of sputtered Cu film and evaporated Cu film.
Characterization of Fluorocarbon Thin Films by Contact Angle Measurements
Journal of the Microelectronics and Packaging Society, volume 6, issue 1, 1999, Pages 39~49
Monolayer thick fluorocarbon films were characterized by the contact angle measurements. The contact angles of three different liquids, water, formamide and diiodomethane were measured on spun coated, vapor phased deposited films and Teflon surface. The highest contact angle over
was observed on fluorocarbon films deposited on Al substrates while the lowest angles below
deposited on oxide. The surface energies were calculated based on Lewis acid /base theory. The surface energies of Teflon and spin coated FC films were calculated to have 18 and 8.4 dynes /cm, respectively. Higher energies of 31 to .35 dynes /cm were calculated on vapor phase deposited films on silicon and oxide. However vapor phase deposited films on aluminum only showed a large Lewis base energy term. It might be explained by the surface roughness and heterogeneity as observed by dynamic contact angles and AFM measurements.
Study on Filler Effects of High Temperature Glass Sealant
Journal of the Microelectronics and Packaging Society, volume 6, issue 1, 1999, Pages 51~58
The effects of glass composition on the wettability and reactivity with
substrate was evaluated and fabrication variables and glass compositions was investigated. Various glass compositions was investigated. Alkaline earth silicate glass show good wettability and lower viscosity and crystallization of glass could be prevented by
.The sealant glass begin to wet on
and porosity occurred in various glass compositions, the crystallization and porosity in the glass could be prevented by the addition of flux into glass composition. But flowability and reactivity of glass with
substrate was enhanced. Processing variables should be optimized to reduce the porosity by enhancing the sintering of glass powder. Many silicate glasses were investigated for the applications of high temperature sealants. Wetting and bonding of glass was good enough to seal together between
and other ceramic components of SOFC. But porosity and reaction layer were occurred in the sealant glass. It will be possible to produce glass sealant without porosity and reaction layer at the interface by optimization of processing variable and modify the glass compositions. In present study, wettability of glass-filler composite was investigated. The porosity, shape of filler and interfacial reactions of sealant glass with fillers were examined.
A Study on Solderability by Lasting time of PCB in Pre-Baking
Journal of the Microelectronics and Packaging Society, volume 6, issue 1, 1999, Pages 59~64
This paper investigated optimum drying time of PCB and the relationship between humidity in PCB and solderability. As experimental results, soldering was improved with increasing drying time. The wetting time of a dry specimen was shorter about 0.2 seconds than that of a wet specimen. The wetting force was Increased by 2~4mN after drying the wet specimen. When PCB was dried over 30 minute, solder defects and tensile strength of soldered joints was optimized. Effects of drying tome of PCB on the soldering, wetting curve, soldered shape, solder ball, and tensile strength, were investigated.
Fabrication and Characterization of Si-tip Field Emitter Array
Journal of the Microelectronics and Packaging Society, volume 6, issue 1, 1999, Pages 65~73
Si-tip FEAs were fabricated by a lift-off based process and their operating properties were evaluated. The dependence of emission current on applied gate and anode voltages, maximum emission current, hysteresis phenomena, MOSFET-type curves, current fluctuation, light emission from the emitted electrons, and failure mechanism of the device were widely discussed based on the experimental results.
Effect of the Cl-based Plasma for Al Etching on the Interlayer Low Dielectric Polyimide
Journal of the Microelectronics and Packaging Society, volume 6, issue 1, 1999, Pages 75~79
We have studied electrical properties of polyimide for the next generation interlayer low dielectric during plasma etching. Dielectric constant of polyimide exposed to Cl-based plasma, which is used in aluminum etching, increased, while that of polyimide exposed to
plasma decreased. The results are related to fluorine or chlorine bonds as examined by FTIR ana XPS analyses. So, we expect that Cl-based 1)miasma etching of aluminum followed by
plasma exposure results in the prevention of post-etch corrosion and decrease of dielectric constant.
Fabrication process for micro magnetostrictive sensor using micromachining technique
Journal of the Microelectronics and Packaging Society, volume 6, issue 1, 1999, Pages 81~89
The fabrication process for miniaturizing the Electronic Article Surveillance (EAS) sensor was studied using micromachining technique. Two types of sensor structure, free standing membrane type and diving beard type, were proposed and researched for establishing the fabrication process. The membrane type structure was easy to change the sensor shape but had the limitation for miniaturizing, because the size of the sensor depends on the silicon substrate thickness. The diving board type structure has the advantage of miniaturization and of free motion. Since the elastic modulus is not trio high, SiN film is expected to be adequate for the supporting membrane of magnetic sensor. The selectivity of
for sputtered W with respect to Fe-B-Si, which was studded for magnetic sensor materials, was high enough to be removed after using as a protection layer. Therefore, the diving board type process using the silicon nitride film for the supporter of the sensor material and the sputtered W for protection layer is expected to be useful fur miniaturizing the Electronic Article Surveillance (EAS) sensor.