Go to the main menu
Skip to content
Go to bottom
REFERENCE LINKING PLATFORM OF KOREA S&T JOURNALS
> Journal Vol & Issue
Journal of the Microelectronics and Packaging Society
Journal Basic Information
Journal DOI :
The Korean Microelectronics and Packaging Society
Editor in Chief :
Volume & Issues
Volume 6, Issue 4 - Dec 1999
Volume 6, Issue 3 - Sep 1999
Volume 6, Issue 2 - Jun 1999
Volume 6, Issue 1 - Mar 1999
Selecting the target year
Design and Fabrication of RF evaluation board for 900MHz
Journal of the Microelectronics and Packaging Society, volume 6, issue 3, 1999, Pages 1~7
A single RF transceiver evaluation board have been developed for the purpose of application to the 900MHz band transceiver contained RF-IC chip And environment test was evaluated. The RF-IC chipset includes LNA(Low Noise Amplifier), down-conversion mixer, AGC(Automatic Gain Controller), switched capacitor filter and down sampling mixer. The RF evaluation board for the testing of chipset contained various external matching circuits, filters such as RF/IF SAW(Surface Acoustic Wave) filter and duplexer and power supply circuits. With the range of 2.7~3.3V the operated chip revealed moderate power consumption of 42mA. The chip was well operated at the receiving frequency of 925~960MHz. Measurement result is similar to general RF receiving specification of the 900MHz digital mobile phone.
Effect of Reflow Variables on the Characteristic of BGA Soldering
Journal of the Microelectronics and Packaging Society, volume 6, issue 3, 1999, Pages 9~18
In this study, Metallugical properties between Sn-3.5Ag, Sn-37Pb eutectic solders and Au/Ni/cu substrate according to time span above the melting point were investigated. A conventional reflow soldering machine wert used for this study and time span above the melting point was determined by changing peak soldering temperature and conveyor speed. As results, scallop type intermetallic compounds of
were formed at joint interface and no Cu-Sn compounds were found at all; Ni layer performed as a barrier for Cu diffusion. As the peak soldering temperature increased, thickness of the intermetallic compound layer increased; maximum thickness of the scallop-layer was 2.2
. The shape of scallops were transformed from hemi-sphere type to elliptical shape with smaller size. Micro-hardness of the solder joint decreased as the eutectic structure of Sn-3.5Ag and Sn-37Pb increased.
Design and Fabrication of Multilayer Chip Band Pass Filter for Mob ice Communication
Journal of the Microelectronics and Packaging Society, volume 6, issue 3, 1999, Pages 19~24
The multilayer chip band pass filter for mobile communication is fabricated and designed. The size, insertion loss, center frequency and band width of multilayer chip filter are 4.5
1.8[mm], 3.0[dB] and 700[MHz]
15[MHz] respectively. The chip filter using
with CuO 0.06wt% +
.lwt% was fabricated by screen printing with Ag electrode after tape casting. Insertion loss and center frequency of the fabricated chip filter are 2.58[dB] and 692.5
15[MHz] respectively. The center frequency was lower 7.5[MHz] than design result, but other characteristics of chip filter were similar to the ruts ultras of design result.
LTCC and LTCC-M Technologies for Multichip Module
Journal of the Microelectronics and Packaging Society, volume 6, issue 3, 1999, Pages 25~35
LTCC (Low Temperature Cofired Ceramic) or LTCC-M (Low Temperature Cofired ceramic on Metal) technology is one of MCM-C (Multichip Module on Ceramic) technologies and becomes to be widely used in consumer, RF and automotive electronics. As green sheets for LTCC are cofired below
in comparison with those for HTCC (High Temperature Cofired Ceramic), high conductivity metal traces such as gold, silver and copper can be used. The dimensional stability in LTCC-M technology enables embedded passives to be integrated inside modules, which enhances the electrical performance and increases the reliability of the modules. Coefficient of thermal expansion and dielectric constant can be controlled by changing composition and heating profile for cofiring. In this technical review, LTCC and LTCC-M technologies are introduced and advantages of those technologies are explained.
A Study on the Co-firing Compatibility with Ag-thick film and Dielectric Characteristics of Low Temperature Sinterable SiO
-RO system (RO :BaO-CaO-SrO) Glass/Ceramic Dielectric Material with the Addition of B
Journal of the Microelectronics and Packaging Society, volume 6, issue 3, 1999, Pages 37~43
Co-firing incompatibility between the low temperature sinterable Glass/ceramic and Ag-thick film was studied. The dielectric material, which has been developed for microwave frequency applications, consists of
-RO system(RO:BaO -CaO-SrO) crystallizable glass and
as a ceramic filler. The large camber in the sintered specimen and cracks at the Ag-film under the influence of the camber occurred due to the difference of densification rate between the ceramic sheet and the Ag-film
addition to the Glass/ceramic mixture reduced the severe camber. The cambers decreased with increasing the
content, and completely disappeared with 14 vol%
addition. With additions of
decreased abruptly, Q
f value increased largely and the
value of the material quickly shifted to positive one.
A Study on the Spot Weldability of Sn-37%Pb Coated Cu-sheet
Journal of the Microelectronics and Packaging Society, volume 6, issue 3, 1999, Pages 45~50
Copper has been widely used for the electronic parts, and especially spot welded one for the leads of condenser or resistor. However, copper is generally hard to be spot welded because of its low electrical resistivity. For this experiment, Sn-37%Pb solder which has relatively higher resistivity was coated on the Cu-sheet to improve the spot weldability of copper. As the experimental variables welding pressure was varied from 100 to 200kgf, welding time from 20 to 50ms, and welding current from 100 to 2500A. Experimental results showed that the solder coated Cu-sheet can be spot welded under the conditions of 400~2200A welding current, 100~200kgf pressure and 20-50ms welding time. The tensile shear strength of the spot welded joint increased with welding current up to the critical current, and after the critical value decreased with current.
Effect of High Filler Loading on the Reliability of Epoxy Holding Compound for Microelectronic Packaging
Journal of the Microelectronics and Packaging Society, volume 6, issue 3, 1999, Pages 51~63
The effects of high filler loading technique on the reliability of epoxy molding compound (EMC) as a microelectronic encapsulant was investigated. The method of high filler loading was established by the improvement of maximum packing fraction using the simplified packing model proposed by Ouchiyama, et al. With the maximum packing fraction of filler, the viscosity of EMC wart lowered and the flowability was improved. As the amount of filler in EMC increased, several properties such as internal stress and moisture absorption were improved. However, the adhesive strength with the alloy 42 leadframe decreased when the filler content was beyond the critical value. It was found that the appropriate content of filler was important to improve the reilability of EMC, and the optimum filler combination should be selected to obtain high reliable EMC filled with high volume fraction of filler.
The formation of Si V-groove for optical fiber alignment in optoelectronic devices
Journal of the Microelectronics and Packaging Society, volume 6, issue 3, 1999, Pages 65~71
The effects of mask materials and etching solutions on the dimensional accuracy of V-groove were studied for the alignment between optoelectronic devices and optical fibers in optical packaging. PECVD nitride, LPCVD nitride, or thermal oxide(
) was used as a mask material. The anisotropic etching solution was KOH(40wt%) or the mixture of KOH and IPA. LPCVB nitride has the best etching selectivity and thermal oxide was etched most rapidly in KOH(40wt%) at
among the mask materials studied here. The V-groove size enlarged than the designed value. This phenomenon was due to the undercutting benearth the mask layer from the etching toward Si (111) plane. The etch rate of (111) plane wart 0.034 - 0.037
/min in KOH(40wt%). This rate was almost same regardless of mask materials. When IPA added to KOH(40wt%), the etch rate of (100) plane and (111) plane decreased, but etching ratio of (100) to (111) plane increased. Consequently, the undercutting phenomenon due to etching toward (111) plane decreased and the size of V-groove could be controlled more accurately.