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REFERENCE LINKING PLATFORM OF KOREA S&T JOURNALS
> Journal Vol & Issue
Journal of the Microelectronics and Packaging Society
Journal Basic Information
Journal DOI :
The Korean Microelectronics and Packaging Society
Editor in Chief :
Volume & Issues
Volume 9, Issue 4 - Dec 2002
Volume 9, Issue 3 - Sep 2002
Volume 9, Issue 2 - Jun 2002
Volume 9, Issue 1 - Mar 2002
Selecting the target year
Development of High Frequency Active Filter for Multimedia
Journal of the Microelectronics and Packaging Society, volume 9, issue 1, 2002, Pages 1~7
The purpose of this work is to develop High-Frequency Active Filter and super-miniaturation technology(SMD Type) of Filter which are essential for the key R/F Microwave components in the Mobile telecommunication system. The cut-off frequency of high frequency active filter for multimedia is 2.5 MHz, the gain is 0.5dB at 100 kHz, the passband ripple is 1.2 dB max at 100 kHz~2.0 kHz, GDT is 60 nsec at 100 kHz-2.0 MHz, the attenuation is 40 dB min at 3.75 MHz.
Preparation and Properties of Organic Electroluminescent Devices
Journal of the Microelectronics and Packaging Society, volume 9, issue 1, 2002, Pages 9~13
Recently, Organic electroluminescent devices (OELDs) have been demonstrated the medium sized full color display with effective multi-layer thin films. In this study, the multi-layer OELDs were prepared on the patterened ITO (indium tin oxide)/glass substrates by the vacuum thermal evaporation method. The low molecule compounds such as
(trim-(8-hydroxyquinoline)aluminum) and CTM (carrier transfer material) as the electron transport and injection layers as well as TPD (triphenyl-diamine) and CuPc (copper phthalocyanine) as the hole transport and injection layers were used. The luminance was rapidly increased above the threshold voltage of 10 V. The luminance and emission spectrum for the OELDs samples with
/TPD/1TO structures were found to be 430 cd/
and 512 nm at 17 V showing green color emission. In contrast, the samples with
/TPD/CuPC/1TO multi-structures showed 508 nm in emission spectrum and 650 cd/
at 17 V in the luminance. The increment of luminance may be ascribed to the improved efficiency of recombination in the region of the emission layers by the deposition of CuPc as hole injection layer and the low work function of the Li-Al electrode compared to the Al electrode.
Development of Dual Band Synthesizer Module(SMD Type)
Journal of the Microelectronics and Packaging Society, volume 9, issue 1, 2002, Pages 15~20
In this project, we hale developed various techniques for subminiaturization, surface implementation, high frequency design, small-size SMD, performance test and application of the Dual PLL module, which is a core component for the personal communication systems. We also obtained base techniques for the next-generation Dual PLL module design and fabrication techniques for an internationally competitive subminiature Dual PLL module.
The Properties and Processing of Bismuth and Indium Added Sn-Cu-Ni Solder Alloy System
Journal of the Microelectronics and Packaging Society, volume 9, issue 1, 2002, Pages 21~28
Bismuth and Indium added Sn-Cu-Ni solder alloy was investigated for a new lead free solder. The thermal, electrical and mechanical properties were characterized for the Sn-0.7%(Cu+Ni) solder alloy by adding 2~5% Bi and 2~ 10% In. The melting point of solder alloy was in range of 200 to
and the mushy zone was in range of 20 to
. This alloys could be adapted to middle and high temperature solder materials. A new solder alloy composition. Sn-0.7%(Cu+Ni) -3.5%Bi-2%In is very promising with high performance and effective cost. The melting point was
, the mushy zone range was
, and mechanical, electrical and wetting properties were competitive with those of other lead-free solder except the lower elongation value.
Optical and Electrical Properties of Thin Film Electroluminescent Devices with SrS:Cu, Ag Phosphor Layer
Chang, Ho-Jung ; Park, Jun-Seo ; Chang, Young-Chul ;
Journal of the Microelectronics and Packaging Society, volume 9, issue 1, 2002, Pages 29~33
The SrS:Cu, Ag thin film electroluminescient devices were fabricated on
/ITO/glass substrates by electron-beam evaporation. The emission spectrum of the device was about 460 nm with
=0.20, y=0.29 in the CIE color coordinator. It was found that the emission spectrum was saturated to pure blue color when Ag sensitizer was doped in SrS:CuCl phosphors. The luminance of the device was increased by increasing the sulfur pressure. The measured luminance was saturated with 430 cd/
at the applied voltage of 90 V and the maximum luminance was 580 cd/
at 110V. The polarization charge and conduction charge of the devices were found to be found to be about
Aging Characteristic of Intermetallic Compounds and Bonding Strength of Flip-Chip Solder Bump
Journal of the Microelectronics and Packaging Society, volume 9, issue 1, 2002, Pages 35~41
Flip-chip interconnection that uses solder bump is an essential technology to improve the performance of micro-electronics which require higher working speed, higher density, and smaller size. In this paper, the shear strength of Cr/Cr-Cu/Cu UBM structure of the high-melting solder bump and that of low-melting solder bump after aging is evaluated. Observe intermetallic compound and bump joint condition at the interface between solder and UBM by SEM and TEM. And analyze the shear load concentrated to bump applying finite element analysis. As a result of experiment, the maximum shear strength of Sn-97wt%Pb which was treated 900 hrs aging has been decreased as 25% and Sn-37wt%Pb sample has been decreased as 20%. By the aging process, the growth of
is ascertained. And the tendency of crack path movement that is interior of a solder to intermetallic compound interface is found.
A Multi-Level Knowledge-Based Design System for Semiconductor Chip Encapsulation
Huh, Y.J. ;
Journal of the Microelectronics and Packaging Society, volume 9, issue 1, 2002, Pages 43~48
Semiconductor chip encapsulation process is employed to protect the chip and to achieve optimal performance of the chip. Expert decision-making to obtain the appropriate package design or process conditions with high yields and high productivity is quite difficult. In this paper, an expert system for semiconductor chip encapsulation has been constructed which combines a knowledge-based system with CAE software.
Fabrication of Soda Borosilicate Class-Coated Electrostatic Chucks
Journal of the Microelectronics and Packaging Society, volume 9, issue 1, 2002, Pages 49~52
This study demonstrated the feasibility of tape casting method to fabricate soda borosilicate glass-coated stainless steel electrostatic chucks(ESC) for low temperature semiconductor processes. Glass coating on the stainless steel substrate was 125
thick. The adhesion of glass coating was found to be excellent such that it was able to withstand temperature cycling to over
without cracking and delamination. The electrostatic clamping pressure generally followed the theoretical voltage-squared curve except at elevated temperatures and high applied voltages. The deviations at elevated temperatures and high applied voltages are due to increased leakage current as the electrical resistivity of glass coating drops.