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REFERENCE LINKING PLATFORM OF KOREA S&T JOURNALS
> Journal Vol & Issue
Journal of the Microelectronics and Packaging Society
Journal Basic Information
Journal DOI :
The Korean Microelectronics and Packaging Society
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Volume & Issues
Volume 9, Issue 4 - Dec 2002
Volume 9, Issue 3 - Sep 2002
Volume 9, Issue 2 - Jun 2002
Volume 9, Issue 1 - Mar 2002
Selecting the target year
Deposition Technology of Copper Thin Films for Multi-level Metallizations
Journal of the Microelectronics and Packaging Society, volume 9, issue 3, 2002, Pages 1~6
A low temperature process technology of copper thin films has been developed by a chemical vapor deposition technology for multi-level metallzations in ULSI fabrication. The copper films were deposited on TiN/Si substrates in helium atmosphere with the substrate temperature between
. In order to get more reliable metallizations, effects on the post-annealing treatment to the electrical properties of the copper films have been investigated. The Cu films were annealed at the
Torr vacuum condition and the electrical resistivity and the nano-structures were measured for the Cu films. The electrical resistivity of Cu films shown to be reduced by the post-annealing. The electrical resistivity of 2.0
was obtained for the sample deposited at the substrate temperature of
after vacuum annealed at
. The resistivity variations of the films was not exactly matched with the size of the nano-structures of the copper grains, but more depended on the contamination of the copper films.
A Comparison of High Frequency Properties of LTCC Substrate Systems
Journal of the Microelectronics and Packaging Society, volume 9, issue 3, 2002, Pages 7~12
In the measurement of the RF properties, the LTCC substrate must be considered as a system including various conductor patterning processes. In this paper, the LTCC substrate system is compared with a conventional PCB(Printed Circuit Board) substrate such as FR-4, Duroid and Teflon, etc. The microstrip resonator method is employed for the measurement of the RF properties in the range of DC to 20 GHz. Experimental results show that the ring resonator method is suitable for system loss measurement, and the series gap resonator method for dielectric constant measurement. The process of conductor patterning and its effect on the system loss were also studied.
Analysis of Stripline Structure(Resonator) in LTCC System
Journal of the Microelectronics and Packaging Society, volume 9, issue 3, 2002, Pages 13~17
In ceramic systems, many components including embedded passives and TRL(transmission line) are used for composition of 3-dimensional circuit. So the exact analysis on this components must be performed. As for the TRL's, material properties including electrical conductivity of metal, loss factor and effective dielectric constant of dielectric material and geometrical factors like roughness of surface, vias, dimension of stripline structure have a large effect on the charactersistics of transmission lines. In this research, effect of material and geometrical factors on the characteristics of stripline structure is analyzed and quantified by simulation and measurement.
A Micro Fluxgate Magnetic Sensor with Closed Magnetic Path
Journal of the Microelectronics and Packaging Society, volume 9, issue 3, 2002, Pages 19~23
This paper presents a micro fluxgate magnetic sensor in printed circuit board (PCB). In order to observe the effect of the closed magnetic path, the magnetic cores of rectangular-ring and two bars were each fabricated. Each fluxgate sensor consists of five PCB stack layers including one layer magnetic core and four layers of excitation and pick-up coils. The center layer as a magnetic core is made of a Co-based amorphous magnetic ribbon with extremely high DC permeability of ~100,000. Four outer layers as an excitation and pick-up coils have a planar solenoid and are made of copper foil. In case of the fluxgate sensor having the rectangular-ring shaped core, excellent linear response over the range of -100
T to ＋ 100
T is obtained with 540 V/Tsensitivity at excitation square wave of 3
and 360 KHz. The chip size of the fabricated sensing element is
. The very low power consumption of ~8 mW was measured. This magnetic sensor is very useful for various applications such as: portable navigation systems, telematics, VR game and so on.n.
Properties of Substrate Glass by Single ion Exchange Process
Journal of the Microelectronics and Packaging Society, volume 9, issue 3, 2002, Pages 25~29
Single ion exchange process was used, and the ion exchange behavior and mechanical properties were investigated in substrate glass for flat panel display. In order to study the effects of ion exchange, ion exchange behavior with ion penetration depth, amount of ion exchange, density and thermal expansion was measured according to the time and temperature. The mechanical properties were evaluated by the three point bending test and curvature change, and then the fracture patterns were investigated by optical microscope.
A Study on the Improvement of Solder Joint Reliability for 153 FC-BGA
Journal of the Microelectronics and Packaging Society, volume 9, issue 3, 2002, Pages 31~36
The 2nd level solder joint reliability of 153 FC-BGA for high-speed SRAM (Static Random Access Memory) with the large chip on laminate substrate comparing to PBGA(Plastic Ball Grid Array) was studied in this paper. This work has been done to understand an influence as the mounting with single side or double sides, structure of package, properties of underfill, properties and thickness of substrate and size of solder ball on the thermal cycling test. It was confirmed that thickness of BT(bismaleimide tiazine) substrate increased from 0.95 mm to 1.20 mm and solder joint fatigue life improved about 30% in the underfill with the low young's modulus. And resistance against the solder ball crack became twice with an increase of the solder ball size from 0.76 mm to 0.89 mm in solder joints.
The Characteristic Analysis of Thin Film Sensor using The Membrane
Journal of the Microelectronics and Packaging Society, volume 9, issue 3, 2002, Pages 37~41
In this research, we investigate the properties of membrane and thin film sensor which is using magnetic resonance properties. we expect to
and SiC materials as membrane materials, we measured thin film stress and properties to find the best membrane fabrication condition. Of the two membrane,
thin film is the better than SiC thin film. because of an adequate tensile stress and lower thermal expansion coefficient as sensor structure layer. After performing deposition and patterning thin film sensor material on
, we analyzed the magnetic hysteresis and magnetic resonance frequency of sensor. If the magnetic field which is applied in sensor material is removed, magnetization made by magnetic field is transited to elastic mode. moreover. energy radiation is induced during the transition and voltage generates in sensor by energy radiation. At this moment, If voltage generation period is longer, mechanical vibration is induced and signal is generated by mechanical vibration. we also see that as the increase of thin film sensor' length and width, magnetic resonance frequency is decreased.
Influence of the Catalyst Composition on Electrode Performance for Polymer Electrolyte Membrane Fuel Cells
Journal of the Microelectronics and Packaging Society, volume 9, issue 3, 2002, Pages 43~48
In this study, high performance electrode catalyst was developed in fabrication of membrane electrode assembly for PEMFCs(Polymer Electrolyte Membrane Fuel Cells). The I-V characteristics were measured to evaluate the influence of Nafion solution and Pt loading amount in the catalyst composition. The electrode characteristics were also investigated with respect to temperature change. The electrode performance was optimized at Nafion 5 wt% and 0.5 mg Pt/
content. The increase in the concentration of Nafion solution resulted in the decrease in electrode performance. At
of unit cell, I-V characteristics excelled those obtained at lower temperature. There was no difference in performance at low current density, but the improvement of voltage value in higher temperature could be found at high current density.
Effects of Surface Offcut Angle of GaAs Substrate on Dislocation Density of InGaP Epilayers
Journal of the Microelectronics and Packaging Society, volume 9, issue 3, 2002, Pages 49~56
In this study, the InGaP epilayers were grown on the exact and the
of cut GaAs substrates by metal-organic vapor phase epitaxy, and the effects of interfacial elastic strains determined by the substrate offcut angle upon the resulting dislocation density of epilayer were investigated for the first time. The elastic strains were obtained from lattice mismatch and lattice misfit by TXRD, and the dislocation densities from epilayer x-ray FWHM. For the offcut angle range used in this study, the elastic strain was maximum and x-ray FWHM minimum at offcut angle
. From 11K PL measurements, PL wavelength was found to decrease with an increase of offcut angle. PL intensity was maximum at offcut angle
. TEM results showed that the electron diffraction pattern was of typical zincblende structure, and that the dislocation density was minimum for substrate offcut angle
. The results obtained in this study, along with the device fabrication process and beam characteristics, clearly demonstrated that the optimum substrate offcut angle for the InGaP/GaAs heterostructures is
Low Dielectric Constant Polymeric Materials for Microelectronics Applications
Journal of the Microelectronics and Packaging Society, volume 9, issue 3, 2002, Pages 57~67
Increased signal speed can be obtained in three ways: changing the layout and/or the ratio of the width to thickness of the metal lines, decreasing the specific resistance of the interconnect metal, and decreasing the dielectric constant of the insulating material (intermetal dielectric). Further advancement cannot be expected from changing layout or decreasing specific resistance. The only alternative is to use an insulating material with a lower dielectric constant than other ones used presently. A large variety of polymers has been proposed for use as materials with low dielectric constants for applications in microelectronics. In this review, the properties of selected polymers as well as various fabrication methods for polymer thin films are discussed. Based on the properties described so far, and the requirements for applications as intermetal dielectric material, the possibilities for further developments also are discussed.