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REFERENCE LINKING PLATFORM OF KOREA S&T JOURNALS
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Journal of the Korean institute of surface engineering
Journal Basic Information
Journal DOI :
The Korean Institute of Surface Engineering
Editor in Chief :
Volume & Issues
Volume 24, Issue 4 - Dec 1991
Volume 24, Issue 3 - Nov 1991
Volume 24, Issue 2 - Jun 1991
Volume 24, Issue 1 - Mar 1991
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Effects of Silicone Contents and Flow Rates on the Formation and Mechanical Properties of Hard Anodized Film of Al-Si alloys
Journal of the Korean institute of surface engineering, volume 24, issue 4, 1991, Pages 179~186
The effects of silicone contents and flow rates(agitation rates) of electrolyte on the formation and mechanical properties of hard anodized film of Al-Si alloy have been studied in 12% H2SO4 + 1% Oxalic acid with varying the silicone contents in the rance of 0 to 11.6% and the flow rates of electrolyte in the range of 0 to 90cm/sec. The film forming voltage required to maintain an equivalent current density significantly increase with the silicone content of Al-Si alloys due to a low conductivity of silicone. Hardness and wear resistance of the anodized film of Al-Si alloys decreases wit increasing the silicone content. The increase in the flow rate of electrolyte has a similar influence on the formation and mechanical properties of anodized film as does the decrease in bath temperature. Hardness of anodized film is rapidly increased with the flow rate being increased from 10cm/sec. It is observed that the increase in the flow rate from 11cm/sec. It is observed that the increase in the flow from 11cm/sec to 48cm/sec is more effective in enhancing the hardness of film than is the decrease in bath temperature from 1
A study on adhesion strength of electroless plated deposits on Alumina substrate
Journal of the Korean institute of surface engineering, volume 24, issue 4, 1991, Pages 187~195
Adhesion strength of electroless-plated Ni, Ni-P and Cu deposites on alumina substrate has been studied. Grain boundary spaces produced on the substrate surface by etching treatment provided anchoring sites for enhancing the adhesion strength. Adhesion strengths of Ni-P and Ni deposit were higher than that of Cu deposit, because of higher initial nucleation rates than the latter. The electroless-plated Ni-P and Ni underlayer improved the adhesion strength of the Cu deposit. In could be attributed to the enhanced adhesion between the substrate and those underlayers as well as the satisfactory adhesion between Cu deposits and those underlayers. Heat treatment was also conducted in order to enhance the adhesion strength of Cu layer. The strength was enhanced by about 19% when the treatment was conducted at
for 2 hours. The enhancement was attributed to relief of internal stress and release of hydrogen.
A Study on the Thermal Stability in Multi-Aluminum Thin Films during Isothermal Annealing
Journal of the Korean institute of surface engineering, volume 24, issue 4, 1991, Pages 196~205
Multi-level thin films are very important in ULSI applications because of their high electromigration resistance. This study presents the effects of titanium, titanium nitride and titanium tungsten underlayers of the stability of multi-aluminum thin films during isothermal annealing. High purity Al(99.999%) films have been electron-beam evaporated on Ti, TiN, TiW films formed on SiO2/Si (P-type(100))-wafer substrates by RF-sputtering in Ar gas ambient. The hillock growth was increased with annealing temperatures. Growth of hillocks was observed during isothermal annealing of the thin films by scanning electron microscopy. The hillock growth was believed to appear due to the recrystallization process driven by stress relaxation during isothermal annealing. Thermomigration damage was also presented in thin films by grain boundary grooving processes. It is shown that underlayers of Al/TiN/SiO2, Al/TiW/SiO2 thin films are preferrable to Al/SiO2 thin film metallization.
Electroless Nickel-Boron Plating on p-type Si Wafer by DMAB
Journal of the Korean institute of surface engineering, volume 24, issue 4, 1991, Pages 206~214
In the basic study of selective electroless Ni plating of Si wafers, plating rate and physical properties are investigated to obtain optimum conditions of contact hole filling. Si wafers are excellently activated in the concentration of 0.5M IF, 1mM PdCl2, 2mM EDTA at
, 90sec. The optimum condition of Ni-B deposition on p-type Si wafers is 0.1M NiSO4, 0.11M Citrate,
, pH6.8, 8mM DMAB. The main factor in the sheet resistences variation of films is amorphous and on heat treating matrix was transformed into a stable phase (Ni+Ni3B) at
. But pH or DMAB concentration in the plating solution doesn't play role of heat-affected phase change.
Effect of Surface Roughness on Nitriding of Aluminum by Electron Cyclotron Resonance Plasma
Journal of the Korean institute of surface engineering, volume 24, issue 4, 1991, Pages 215~221
Microstructure evolution during low temperature vapor deposition exhibits wel-developed columnar structure mainly owing to geometrical shadowing effect of surface roughness. It is concluded that this structure is concided with many theoretical models suggested so far. In case of aluminum nitride film deposition consisted of etching and nitriding step employing ECR plasma, the rougher the surface before etching, the finer and more cone-and-whisker structure can be developed. In turn, this fine structure affects the formation and growth of columnar as well as offers many sites available for mechanical lock-up. Conclusively, the formation of well-defined columnar structures depends on the initial surface roughness.
The effect of stable oxide dispersoid on the high temperature oxidation behavior of Ni-Cr alloys
Journal of the Korean institute of surface engineering, volume 24, issue 4, 1991, Pages 222~229
The oxidation behavior of Ni-6wt.% Cr alloys with various concentration of alumina dispersions(5vol.% 10vol.%) was determined at 1000 and 110
in oxygen of 1 atm. pressure. Some general observations were ascertained. These include: (a) the addition of alumina dispersoids significantly increased the oxidation resistance of Ni-6wt.% Cr alloy; (b) the rate of oxidation was distinctly decreased as a function of the volume percent of oxide dispersion; and (c) the presence of alumina dispersions promoted the formation of continous, protective Cr2O3 layer at 6 wt.% Cr.