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REFERENCE LINKING PLATFORM OF KOREA S&T JOURNALS
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Journal of the Korean institute of surface engineering
Journal Basic Information
Journal DOI :
The Korean Institute of Surface Engineering
Editor in Chief :
Volume & Issues
Volume 25, Issue 6 - Dec 1992
Volume 25, Issue 5 - Dec 1992
Volume 25, Issue 4 - Nov 1992
Volume 25, Issue 3 - Jul 1992
Volume 25, Issue 2 - Apr 1992
Volume 25, Issue 1 - Feb 1992
Selecting the target year
A study on the development of thin solid state batteries
Journal of the Korean institute of surface engineering, volume 25, issue 5, 1992, Pages 215~221
This research is aimed at developing(110) preferred TiS2 cathode films and glass typed solid electro-lytes which have high ionic migrations and low electron conductivities for thin secondary solid batteries. To obtain preferred oriented TiS2 thin films on a substrate by CVD method using TiCl4 and H2S gases three factors of heating temperature, inner pressure of furnace and TiCl4/H2S gas mole fraction were ex-amined systematically. To obtain solid films of Li2O-B2O3-SiO2 electrolytes by r.f. sputtering for thin proto-type batteries of Li/Li2O-B2O3-SiO2TiS2, sputtering conditions were examined. TiS2 cathode films showed columnar structure, namely c axis oriented parallely. At low pressure of reaction chamber and low heating temperature, surface of smooth TiS2 films couldd be obtained. Ionic conductivity of Li2O-B2O3-SiO2 films manufactured by r.f. magnetron sputtering were 3
-1cm-1 and electron conductivities were 10-11
-1cm-1. Open cell voltage of thin lithium batteries were 2.32V with a designed prototype cell.
A Study of Structure & Composition Characteristics of the(Ti, Al) N Coating on the STS 304 by D.C. Magnetron Sputtering
Journal of the Korean institute of surface engineering, volume 25, issue 5, 1992, Pages 223~233
(Ti, Al)N films were deposited on 304 stainless steel by D.C. magnetron sputtering using Al target and Ti plate. The properties of (Ti, Al)N films such as composition, microhardness, grain size, crystal structure were investigated. The chemical composition of (Ti, Al)N films was similar to the sputter area ratio of titanium to aluminum target by means of EDS and AES survey. The higher bias voltage to substrate and the smaller input of N2 gas showedthe increased microhardness and the finer grain size of the films. The results obtained from this study show, it is belived, that the (Ti, Al)N film by D.C.magne-tron sputtering is promising in the wear resistance use.
High Temperature Oxidation Characteristics of the (Ti, Al)N Coating on the STS 304 by D.C. Magnetron Sputtering
Journal of the Korean institute of surface engineering, volume 25, issue 5, 1992, Pages 235~252
(Ti, Al)N films were deposited on 304 stainless steel sheet by D.C. magnetron sputtering using Al target and Ti plate. The high temperature oxidation of (T, Al)N films with the variation of composition has been investigated. The chemical composition of (Ti, Al)N films with the variation of composition has been investigated. The chemical composition of (Ti, Al)N films was similar to the sputter area ratio of titanium to aluminum target by means of EDS and AES survey. The high temperature oxidation test of (Ti, Al)N showed that (Ti, Al)N has better high temperature resistance than TiN and TiC films. TiC films were cracked at 40
in air TiN films quickly were oxidised at
, were spalled more than
. But (Ti, Al)N films are relatively stable to
. The good resistance to high temperature oxida-tion of (Ti, Al)N films are due to the formation of dense Al2O3 and TiO2 oxide layer. Especially, Al2O3 oxide layer is more important. The results obtained from this study show, it is believe that the (Ti, Al)N film by D.C. magnetron sputtering is promising for the use of high temperature and wear resistance mate-rials.
High Temperature Oxidation Characteristics of Ti-Al Intermetallic Compounds
Journal of the Korean institute of surface engineering, volume 25, issue 5, 1992, Pages 253~261
Ti-Al intermetallic compounds which can be used in gas turbine at elevated temperature were inves-tigated in order to improve oxidation resistance by the formation of protective oxide scale. Four Ti-Al alloys were prepared by plasma arc melting. As the amount of Al was increased among the alloys, oxida-tion resistance was improved by the formation of relatively purer Al2O3 layer. However, the alloys which have less amount of Al formed a duplex layer of Al2O3 and TiO2. When samples were oxidized in pure oxygen instead of air, oxidation resistance was improved because of formation of the purer Al2O3 layer.
A study for development of high speed hard chrome plating solution
Journal of the Korean institute of surface engineering, volume 25, issue 5, 1992, Pages 263~269
To enhancing efficiency of hard chrome plating solution more highly, cathode current efficiency were surveyed connected with hardness of deposits, surface morphology, TEM analysis and corrosion test of anode materials. Efficiency war increased up to 26% values by adding catalyst and two kind of additives. With given bath composition and 6
electrolosis conditionss bright and micro cracked deposits were well obtained, which showed HV 1000 values. From corrosion tests, anode materials such as Pb-Te (0.02%) and Pb-Ag(1%) showed most anti-corrosive results. Through SEM micrograph observations, ef-fects of additives on levelling, brightness and micro crack properties of hard chrome deposits could be con-firmed. Also, through TEM analysis the fact that deposits from crack free solution or high speed solution were more fine than from sargent solution could be confirmed.
Effects of Deposition Parameters on the Bonding Structure and Optical Properties of rf Sputtered a-Si
: H films
Journal of the Korean institute of surface engineering, volume 25, issue 5, 1992, Pages 271~281
Amorphous hydrogenated silicon carbide(a-Si1-xCx : H) films have been prepared by the rf sputtering using a silicon target in a gas mixture of Argon and methane with varying methane gas flow rate(fCH) in the range of 1.5 to 3.5 sccm at constant Argon flow rate of 30sccm and rf power in the range of 3 to 6 W/
. The effects of methane flow rate and rf power on the structure and optical properties of a-Si1-xCx : H films have been analysed by measuring both the IR absorption spectrum and the UV transmittance for the films. With increasing the methane flow rate, the optical band gap(Eg) of a-Si1-xCx : H films increases gradually from 1.6eV to the maximum value of 2.42eV at rf power of 4 W/
, which is due to an increases in C/Si ratio in the films by an significant increase in the number of C-Hn bonds. As the rf power increases, the number of Si-C and Si-Hn bonds increases rapidly with simultaneous reduction in the number of C-Hn bonds, which is associated with an increase in both degree of methane decomposition and sputtering of silicon. The effects of rf power on the Eg of films are considerably influenced by the methane flow rate. At low methane flow rate, the Eg of films decreased from 2.3eV to 1.8eV with the rf power. On the other hand, at high methane flow rate, that of films increased slowly to 2.4eV.