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REFERENCE LINKING PLATFORM OF KOREA S&T JOURNALS
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Journal of the Korean Ceramic Society
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Journal DOI :
The Korean Ceramic Society
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Volume & Issues
Volume 34, Issue 12 - Dec 1997
Volume 34, Issue 11 - Nov 1997
Volume 34, Issue 10 - Oct 1997
Volume 34, Issue 9 - Sep 1997
Volume 34, Issue 8 - Aug 1997
Volume 34, Issue 7 - Jul 1997
Volume 34, Issue 6 - Jun 1997
Volume 34, Issue 5 - May 1997
Volume 34, Issue 4 - Apr 1997
Volume 34, Issue 3 - Mar 1997
Volume 34, Issue 2 - Feb 1997
Volume 34, Issue 1 - Jan 1997
Volume 3, Issue 3 - 00 1997
Volume 3, Issue 2 - 00 1997
Volume 3, Issue 1 - 00 1997
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Micro-Raman Spectroscopy and Cathodoluminescence Study of Cross-section of Diamond Film
ChunLei Wang ; Akimitsu Hatta ; Jaihyung Won ; Nan Jiang ; Toshimichi Ito ; Takatomo Sasaki ; Akio Hiraki ; Zengsun Jin ; Guangtian Zou ;
Journal of the Korean Ceramic Society, volume 3, issue 1, 1997, Pages 1~1
Diamond film (24㎛) were prepared by Microwave Plasma Chemical Vapor Deposition method from a reactive CO/H2 mixtures. Micro-Raman spectroscopy and micro-cathodoluminescence study were carried out along the crosssection and correlated to SEM observation. CL image of cross-section was also investigated. Peak position, FWHM of Raman spectrum were determined using Lorentzing fit. The stress in this sample is 0.4∼0.7 GPa compressive stress, and along the distance the compressive stress reduced. The Raman peak broadening is dominated by phonon life time reduction at grain boundaries and defect sites. Defects and impurities were mainly present inside the film, not at Silicon/Diamond interface.
Role of Charge Produced by the Gas Activation in the CVD Diamond Process
황농문 ; 최균 ; Kang, Suk Joong L. ;
Journal of the Korean Ceramic Society, volume 3, issue 1, 1997, Pages 5~5
Charged carbon clusters which are formed by the gas activation are suggested to be responsible for the formation of the metastable diamond film. The number of carbon atoms in the cluster that can reverse the stability between diamond and graphite by the capillary effect increases sensitively with increasing the surface energy ratio of graphite to diamond. The gas activation process produces charges such as electrons and ions, which are energetically the strong heterogeneous nucleation sites for the supersaturated carbon vapor, leading to the formation of the charged clusters. Once the carbon clusters are charged, the surface energy of diamond can be reduced by the electrical double layer while that of graphite cannot because diamond is dielectric and graphite is conducting. The unusual phenomena observed in the chemical vapor deposition diamond process can be successfully approached by the charged cluster model. These phenomena include the diamond deposition with the simultaneous graphite etching, which is known as the thermodynamic paradox and the preferential formation of diamond on the convex edge, which is against the well-established concept of the heterogeneous nucleation.
The Effect of Initial DC Bias Voltage on Highly Oriented Diamond Film Growth on Silicon
강대환 ; 민석홍 ; 김기범 ;
Journal of the Korean Ceramic Society, volume 3, issue 1, 1997, Pages 13~13
It is identified that the diamond films grown o bias-treated (100) silicon showed different surface morphologies and film textures according to the initial applied dc bias voltage at the same growth condition. The highly oriented diamond film (HODF) was successfully grown on -200 V bias-treated silicon substrate in which the heteroepitaxial relation of (100)dimond//(100)si and diamond//si was identified. On the contrary, the heteroepitaxial relation was considerably disturbed in the samples bias-voltage was a key factor in growing the highly oriented diamond film on (100) silicon substrate. Considering the experimental results, we proposed a new model about heteroepitaxial diamond growth on silicon, in which 9 diamond unit cell are matched with 4 silicon cells and the bond covalency of both atoms is satisfied via the intermediate layer at the interface as well.
Bonding and Etchback Silicon-on-Diamond Technology
Zengsun Jin ; Changzhi Gu ; Qiang Meng ; Xiangyi Lu ; Guangtian Zou ; Jianxial Lu ; Da Yao ; Xiudi Su ; Zhongde Xu ;
Journal of the Korean Ceramic Society, volume 3, issue 1, 1997, Pages 18~18
The fabrication process of silicon-diamond(SOD) structure wafer were studied. Microwave plasma chemical vapor deposition (MWPCVD) and annealing technology were used to synthesize diamond film with high resistivity and thermal conductivity. Bonding and etchback silicon-on-diamond (BESOD) were utilized to form supporting substrate and single silicon thin layer of SOD wafer. At last, a SOD structure wafer with 0.3∼1㎛ silicon film and 2㎛ diamond film was prepared. The characteristics of radiation for a CMOS integrated circuit (IC) fabricated by SOD wafer were studied.
Total Photoyields from CVD Diamond Surfaces and Their Electron Affinity
T. Ito ; H. Yagi ; N. Eimori ; A. Hatta ; A. Hiraki ;
Journal of the Korean Ceramic Society, volume 3, issue 1, 1997, Pages 21~21
Dependences of total photoyields on incident photon energies were measured using synchrotron radiation light for different chemical-vapor-deposited diamond with differently treated surface. Results show that a considerable amount of gap states are presented for as-grown specimens with H-terminated, that negative electron affinity (NEA) is realized for H-plasma-treated specimens, and that sufficient O-treatment to NEA specimens results in positive electron affinity. The observed electron affinity can be explained in terms of differences in strength of the surface dipole layer formed by difference in the electron negativity among C, H and O atoms.
Diamond Deposition by Multi-cathode DC PACVD
이재갑 ; 이욱성 ; 백영준 ; 은광용 ;
Journal of the Korean Ceramic Society, volume 3, issue 1, 1997, Pages 24~24
Diamond deposition by muti-cathode DC PACVD has been investigated. Five cathodes were independently connected to their own DC power supplies. The voltage and current of each cathods were varied up to 700 V and 3.5 A, respectively. The plasma formation and the diamond deposition behaviour on a substrate of 3 inch in diameter were investigated by optical emission spectroscopy, SEM and Raman spectroscopy. The plasma formed by five cathodes was non-uniform, which was depended on the geometry of cathods array. The growth rate and the quality of diamond film were closely related to the spatial distribution of the plasma.
Thermal Properties of Diamond Films Deposited by Chemical Vapor Depositon
채희백 ; 백영준 ;
Journal of the Korean Ceramic Society, volume 3, issue 1, 1997, Pages 29~29
Four diamond films were deposited by the microwave plasma assisted chemical vapor deposition method varying CH4 concentration from 2.5 to 10% in the feeding gases. Thermal conductivity was measured on these free standing films by the steady state method from 80 K to 400K. They showed higher thermal conductivity as the film deposited with lower methane concentration. One exception, 7.79% methane concentration deposited film, was observed to be the highest thermal conductivity. Phonon scattering processes were considered to analyze the thermal conductivity with the full Callaway model. The grain size and the concentration of the extended and the point defects were used as the fitting parameters. Microstructure of diamond films was investigated with the scanning electron microscopy and Raman spectroscopy.
Patterning of Diamond Micro-Columns
조훈숙 ; 백영준 ; 정보건 ; 이주용 ; D. Jeon ; 소대화 ;
Journal of the Korean Ceramic Society, volume 3, issue 1, 1997, Pages 34~34
We have fabricated a patterned diamond field emitter on a silicon substrate. Fine diamond particles were planted on a silicon wafer using conventional scratch method. A silicon oxide film was deposited on the substrate seeded with diamond powder. An array of holes was patterned on the silicon oxide film using VLSI processing technology. Diamond grains were grown using a microwave plasma-assisted chemical vapor deposition. Because diamond could not grow on the silicon oxide barrier, diamond grains filled only the patterned holes in the silicon oxide film, resulting in an array of diamond tips.
DC Electrical Current Behavior of Calcia Doped Zirconia Under Various Oxygen Containing Gases
이주신 ; 최태운 ;
Journal of the Korean Ceramic Society, volume 3, issue 1, 1997, Pages 37~37
The DC current variation of calcia doped zirconia single crystal was measured under various oxygen containing gases at high temperatures. The DC current was influenced by the gas species for oxygen activity establishment. Also, strong non-ohmic characteristics were observed in the CO/CO₂/N₂ gas mixtures. Based on the experimental data obtained by introducing the non-buffering gas N2 into the CO/CO₂ mixtures, the processes occurring at the gas/solid interface during a defect relaxation process are discussed.
Effect of Thulium Doping on Luminescence Properties of
Journal of the Korean Ceramic Society, volume 3, issue 1, 1997, Pages 43~43
Tribological Behaviour of the Si/SiC and the Si/SiC/Graphite Composites
김인섭 ; 신동우 ; 소유영 ; 이병하 ;
Journal of the Korean Ceramic Society, volume 3, issue 1, 1997, Pages 47~47
The dense sintered bodies of Si/SiC composite with various Si contents could be fabricated by changing the green density in the forming process. The Si/SiC/graphite composites with various graphite contents could be also fabricated by changing a graphite content in the starting composition. Their mechanical and tribological properties were characterized and wear mechanism was also studided. The hardness and strength of the Si/SiC and the Si/SiC/graphite were decreased with increasing the contents of free Si and graphite, respectively. However, the friction coefficient and specific wear rate had no specific relations to their hardness and strength. Adhesion of free Si was a main factor to determine a wear resistance of the Si/SiC composite. In the case of the Si/SiC/graphite, solid lubricationl and liquid reservoir of the graphite particles played the main role of the reduction of the friction force. In the torque test to estimate the possibility of practical of practical applications, the value of torque between the Al₂O₃ disk and Si/SiC/graphite disk was 1/6 lower compared with two Al₂O₃ disks on the basis of 100,000 cycles.
Prepartion and Characterization of the Pt doped TiO2 Membranes
배동식 ; 한경섭 ; 최상홀 ;
Journal of the Korean Ceramic Society, volume 3, issue 1, 1997, Pages 52~52
The Pt doped TiO₂ composite membranes were prepared by the sol-gel process. The Pt doped titania sol was peptized with hydrochloric acid in the pH range of 1.23 to 1.32 at 50℃. The average particle size of the Pt doped titania sol was shown to be below 15nm and well dispersed in the solution. XPS show the Pt elements continuous and homogeneous dispersed in the TiO₂ membrane. The mean particle size of the Pt doped TiO₂ composite membrane has smaller than that of the undoped TiO₂composite membrane. The average pore size of the Pt doped TiO₂ composite membrane was increased from 58 to 193 Å with firing temperature changed from 550 to 850℃. It was observed that the Pt doped TiO₂composite membranes showed crack-free and homogeneous microstructue as well as narrow particle size distribution up to above 750℃.
The Effects of Process Parameters on Properties of CdS Thin Films Prepared by Solution Growth Method
김수길 ; 이용의 ; 김상덕 ; 김형준 ; 송진수 ; 윤경훈 ; 최병호 ;
Journal of the Korean Ceramic Society, volume 3, issue 1, 1997, Pages 57~57
The effects of pH of solution on structural, electrical, and optical properties of CdS thin films prepared by solution growth method were investigated. With increasing pH of the solution, both crystallinity and transmittance of CdS thin film were deteriorated due to impurities and CdS particles, which were produced by homogeneous nucleation and adsorbed on the surface of CdS thin films. The films were strongly adherent to substrates and has low resistivity of 10∼10² Ω㎝ regrardless of deposition conditions. After annealing at 300℃ in Ar atmosphere, the resistivity decreased due to desorption of impurity ions as well as the formation of S vacancies, but after annealing above 350℃ it increased by an agglomeration of S vacancies. After annealing in air atmosphere, the film resistivity increased because of the formation of oxide particle in grain boundaries.