• Title, Summary, Keyword: $Ferro-Si_3N_4$

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Decomposition Behavior of Ferro-Si3N4 for High Temperature Refractory Application (고온 내화물 응용을 위한 질화규소철 (Ferro-Si3N4)의 분해거동)

  • Choi, Do-Mun;Lee, Jin-Seok;Choi, Sung-Churl
    • Journal of the Korean Ceramic Society
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    • v.43 no.9
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    • pp.582-587
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    • 2006
  • Decomposition behavior of $ferro-Si_3N_4$was investigated with varying temperature and holding time in mud components for high temperature refractory applications. Porosities gradually increased with increasing temperature and holding time due to the carbothermal reduction of $Si_3N_4\;and\;SiO_2$. Silicon monoxide (SiO) as a intermediate resulted from evaporation of $Si_3N_4\;and\;SiO_2$ reacted with C sources to generate needle-like ${\beta}-SiC$ and Fe in $Si_3N_4$ acted as a catalyst in order to enhance growth of SiC grain with the preferred orientation. SiC generation yield increased with increasing holding time, all of the $Si_3N_4\;and\;SiO_2$ affected on SiC formation up to 2h. However, SiC generation was only dependent on residual $SiO_2$ over 2h, because the carbothermal reduction reaction of $Si_3N_4$ was no longer possible at that time.

Crystallization Kinetics of $PbO-TiO_2-SiO_2-B_2O_3$ Glasses by DSC (DSC에 의한 $PbO-TiO_2-SiO_2-B_2O_3$계 유리의 결정화 속도)

  • 손명모;이승호;이헌수;박희찬
    • Journal of the Korean Ceramic Society
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    • v.32 no.12
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    • pp.1331-1336
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    • 1995
  • The glass-ceramics for ferro-electric were made from compositions of 70PbO.16TiO2.8SiO2.4B2O3.2AlPO4 (wt%) and 67.5PbO.20TiO2.8.5SiO2.2B2O3.2AlPO4 (wt%). The crystallization kinetics for PbTiO3 crystalline phase formation from glass was studied using non-isothermal DSC techniques. The values of activation energy, ΔE using variables of heating rate and temperature were calculated at various reaction fractions obtained from peak area over DSC. The results indicated that activation energy was lowest at 60% reaction fractions and the activation energy of glass containing 20.0 wt% TiO2 is higher than that of glass containing 16.0 wt% TiO2. The crystallization mechanism was three dimensional growth (n=4).

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Growth and electrical properties of $Sr_2$$({Ta_{1-x}},{Nb_x})_2$)$O_7$ thin films by RF sputtering (RF Sputtering을 이용한 $Sr_2$$({Ta_{1-x}},{Nb_x})_2$)$O_7$ 박막의 성장 및 전기적 특성)

  • In, Seung-Jin;Choi, Hoon-Sang;Lee, Kwan;Choi, In-Hoon
    • Korean Journal of Materials Research
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    • v.11 no.5
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    • pp.367-371
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    • 2001
  • In this paper, theS $r_2$(T $a_{1-x}$ , N $b_{x}$)$_2$ $O_{7}$(STNO) films among ferroelectric materials having a low dielectric constant for metal-ferroelectric-semiconductor field effect transistor(MFS-FET) were discussed. The STNO thin films were deposited on p-type Si(100) at room temperature by co-sputtering with S $r_2$N $b_2$ $O_{7(SNO)}$ ceramic target and T $a_2$ $O_{5}$ ceramic target. The composition of STNO thin films was varied by adjusting the power ratios of SNO target and T $a_2$ $O_{5}$ target. The STNO films were annealed at 8$50^{\circ}C$, 90$0^{\circ}C$ and 9$50^{\circ}C$ temperature in oxygen ambient for 1 hour. The value of x has significantly influenced the structure and electrical properties of the STNO films. In the case of x= 0.4, the crystallinity of the STNO films annealed at 9$50^{\circ}C$ was observed well and the memory windows of the Pt/STNO/Si structure were 0.5-8.3 V at applied voltage of 3-9 V and leakage current density was 7.9$\times$10$_{08}$A/$\textrm{cm}^2$ at applied voltage of -5V.of -5V.V.V.

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