• Title, Summary, Keyword: 와이어 본딩

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A New Wire Bonding Technique for High Power Package Transistor (고출력 트랜지스터 패키지 설계를 위한 새로운 와이어 본딩 방식)

  • Lim, Jong-Sik;Oh, Seong-Min;Park, Chun-Seon;Lee, Yong-Ho;Ahn, Dal
    • The Transactions of The Korean Institute of Electrical Engineers
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    • v.57 no.4
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    • pp.653-659
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    • 2008
  • This paper describes the design of high power transistor packages using high power chip transistor dies, chip capacitors and a new wire bonding technique. Input impedance variation and output power performances according to wire inductance and resistance for internal matching are also discussed. A multi crossing type(MCT) wire bonding technique is proposed to replace the conventional stepping stone type(SST) wire bonding technique, and eventually to improve the output power performances of high power transistor packages. Using the proposed MCT wire bonding technique, it is possible to design high power transistor packages with highly improved output power compared to SST even the package size is kept to be the same.

A Study on the Design of Concurrent Dual Band Low Noise Amplifier for Dual Band RFID Reader (이중 대역 RFID 리더에 적용 가능한 Concurrent 이중 대역 저잡음 증폭기 설계 연구)

  • Oh, Jae-Wook;Lim, Tae-Seo;Kim, Hyeong-Seok
    • The Transactions of The Korean Institute of Electrical Engineers
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    • v.56 no.4
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    • pp.761-767
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    • 2007
  • In this paper, we deal wih a concurrent dual band low noise amplifier for a Radio Frequency Identification(RFID) reader operating at 912MHz and 2.45GHz. The design of the low noise amplifier is based on the TSMC $0.18{\mu}m$ CMOS technology. The chip size is $1.8mm\times1.8mm$. To improve the noise figure of the circuit, SMD components and a bonding wire inductor are applied to input matching. Simulation results show that the 521 parameter is 11.41dB and 9.98dB at 912MHz and 2.45GHz, respectively The noise figure is also determined to 1.25dB and 3.08dB at the same frequencies with a power consumption of 8.95mW.

Design of Ultrasonic Tool Horn for Wire Wedge Bonding (와이어 본딩용 초음파 공구혼 설계에 관한 연구)

  • Lee, Bong-Gu;Oh, Myung-Seok;Ma, Jeong-Beom
    • Journal of The Korean Society of Manufacturing Technology Engineers
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    • v.22 no.4
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    • pp.717-722
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    • 2013
  • In this study, we investigated the design of a wire wedge bonding ultrasonic tool horn using finite element method (FEM) simulations. The proposed method is based on an initial design estimate obtained by FEM analysis. An ultrasonic excitation causes various vibrations of a transducer horn and capillary. A simulated ultrasonic transducer horn and resonator are then built and characterized experimentally using a laser interferometer and electrical impedance analyzer. The vibration characteristics and resonance frequencies close to the exciting frequency are identified using ANSYS. FEM analysis is developed to predict the resonance frequency of the ultrasonic horn and use it in the optimal design of an ultrasonic horn mode shape.

Optimization of a Flip-Chip Transition for Signal Integrity at 60-GHz Band (60 GHz 대역 신호 무결성을 위한 플립 칩 구조 최적화)

  • Kam, Dong Gun
    • The Journal of Korean Institute of Electromagnetic Engineering and Science
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    • v.25 no.4
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    • pp.483-486
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    • 2014
  • Although flip-chip interconnects have smaller parasitics than bonding wires, they should be carefully designed at 60 GHz. Insertion loss at a flip-chip transition may differ as much as 2 dB depending on design parameters. In this paper we present a comprehensive sensitivity analysis to optimize the flip-chip transition.

TLP and Wire Bonding for Power Module (파워모듈의 TLP 접합 및 와이어 본딩)

  • Kang, Hyejun;Jung, Jaepil
    • Journal of the Microelectronics and Packaging Society
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    • v.26 no.4
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    • pp.7-13
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    • 2019
  • Power module is getting attention from electronic industries such as solar cell, battery and electric vehicles. Transient liquid phase (TLP) boding, sintering with Ag and Cu powders and wire bonding are applied to power module packaging. Sintering is a popular process but it has some disadvantages such as high cost, complex procedures and long bonding time. Meanwhile, TLP bonding has lower bonding temperature, cost effectiveness and less porosity. However, it also needs to improve ductility of the intermetallic compounds (IMCs) at the joint. Wire boding is also an important interconnection process between semiconductor chip and metal lead for direct bonded copper (DBC). In this study, TLP bonding using Sn-based solders and wire bonding process for power electronics packaging are described.

Contact Analysis on a Born-Holder Assembly for Wire Bonding (와이어 본더용 Horn-Holder Assembly의 접촉 해석)

  • Jang, Chang-Soo;Ahn, Geun-Sik;Kim, Young-Joon;Kwak, Dong-Ok;Boo, Seong-Woon
    • Transactions of the Korean Society of Mechanical Engineers A
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    • v.26 no.10
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    • pp.2008-2017
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    • 2002
  • Joint structure of a transducer horn-holder assembly fur a wire bonder was examined through FEM contact analysis. A three dimensional modeling and analysis was carried out to survey the internal physics of this structure and to prove the accuracy of a computation compared to a measurement. After validation, a simple two dimensional model was built fur various parametric study considering the efficiency and speed of the computation. Several factors such as boundary conditions, a modeling boundary, mesh density and so on, were considered to obtain consistency with three dimensional analysis. An arc angle and a position of each holder boss were chosen as design parameters. A design of experiment was applied to find out an optimized design of the holder geometry. As a result, a guideline for holder boss design was suggested and main factors and their influence on stress concentration in the transducer horn were surveyed.

Vibration Characteristics of a Wire-Bonding Transducer Horn (와이어 본딩용 트랜스듀서 혼의 진동 특성)

  • Yim, Vit;Han, Dae-Ung;Lee, Seung-Yeop;An, Geun-Sik;Gang, Gyeong-Wan;Kim, Guk-Hwan
    • Proceedings of the Korean Society for Noise and Vibration Engineering Conference
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    • pp.583-588
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    • 2007
  • This paper investigates the vibration characteristics of a wire-bonding transducer horn for high speed welding devices. The sample wire-bonder uses the input frequency of 136 kHz. The ultrasonic excitation causes the various vibrations of transducer horn and capillary. The vibration modes and frequencies close to the exciting frequency are identified using ANSYS. The nodal lines and amplification ratio of the ultrasonic horn are also obtained in order to evaluate the bonding performance of the sample wire-bonder system. The FEM results and experimental results show that the sample wire-bonder system uses the bending mode of 136 kHz as principal motion for bonding. The major longitudinal mode exists at 119 kHz below the excitation frequency. It is recommeded that the sample system is to set the excitation frequency at 119 kHz to improve bonding performance.

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주석 전기도금과 열압착본딩을 이용한 Bi2Te3계 열전모듈의 제작

  • Yun, Jong-Chan;Choe, Jun-Yeong;Son, In-Jun;Jo, Sang-Heum;Park, Gwan-Ho
    • Proceedings of the Korean Institute of Surface Engineering Conference
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    • pp.129-129
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    • 2017
  • 열전재료는 열에너지를 전기에너지로 또는 전기에너지를 열에너지로 직접 변환하는데 가장 널리 사용되는 재료이다. $Bi_2Te_3$계 열전 재료는 400K 이하의 비교적 저온 영역에서 높은 성능지수(Dimensionless Figure of merit, ZT($={\alpha}2{\sigma}T/{\kappa}$, ${\alpha}$: 제백계수, ${\sigma}$: 전기전도도, T: 절대온도, ${\kappa}$: 열전도도))를 나타내는 열전재료이며 자동차 시트나 정수기 등에 응용되고 있다. 열전모듈은 제조시 수십 개에서 수백 개 이상의 n형 및 p형 열전소자를 알루미나($Al_2O_3$)와 같은 세라믹 기판(substrate) 상에 접합된 동 전극 위에 전기적으로 서로 직렬로 접합시켜 제조한다. 기존의 열전모듈의 제조방법에는 동 전극 위에 위에 Sn합금 분말과 플럭스(flux)의 혼합물인 솔더페이스트를 스크린 인쇄법을 사용하여 동 전극에 도포한 다음, 그 위에 열전소자를 얹고 약 520K의 열풍을 가하여 솔더를 용융시켜 열전소자와 동 전극을 접합시킨다. 스크린 인쇄법에서는 인쇄 압력이 일정하지 않으면, 솔더페이스트 층의 두께가 균일하지 않게 되어 열전소자 접합부의 불량을 유발시킨다. 그러나 열모듈은 단 하나의 접합 불량이 모듈 전체의 열전변환성능에 심각한 영향을 줄 수 있기 때문에 본 연구에서는 이러한 문제점을 해결하기 위해, 솔더페이스트를 도포하지 않고 열전소자를 직접 동 전극과 접합할 수 있는 방법을 고안하였다. 무전해도금을 이용한 니켈층을 형성시킨 $Bi_2Te_3$계 열전소자 표면에 약 $50{\mu}m$의 주석도금층을 전기도금법을 구사하여 형성시켰다. 그 후, wire cutting을 통하여 $3mm{\times}3mm{\times}3mm$의 크기로 절단한 주석도금된 열전소자를 동 전극에 얹고 1.1KPa의 압력을 가하면서 523K의 핫플레이트 위에서 3분간 방치하여 직접(direct) 열압착 접합을 실시하였다. 접합부의 단면을 SEM을 이용하여 관찰한 결과, 동 전극과 열전소자 사이의 계면에 용융 후 응고된 주석층이 결함없이 균일하게 형성된 양호한 접합부를 관찰할 수 있었다. 따라서, 솔더페이스트를 이용하지 않고, 열전소자 표면에 주석도금을 실시한 후, 동 전극과 직접 열압착 본딩을 실시하는 방법은 균일한 접합계면을 얻을 수 있는 새로운 공정으로 기대된다.

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Warpage Characteristics of Bottom Packages for Package-on-Package(PoP) with Different Chip Mounting Processes (칩 실장공정에 따른 Package on Package(PoP)용 하부 패키지의 Warpage 특성)

  • Jung, D.M.;Kim, M.Y.;Oh, T.S.
    • Journal of the Microelectronics and Packaging Society
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    • v.20 no.3
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    • pp.63-69
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    • 2013
  • The warpage of a bottom package of Package on Package(PoP) where a chip was mounted to a substrate by flip chip process was compared to that of a bottom package for which a chip was bonded to a substrate using die attach film(DAF). At the solder reflow temperature of $260^{\circ}C$, the packages processed with flip chip bonding and DAF bonding exhibited warpages of $57{\mu}m$ and $-102{\mu}m$, respectively. At the temperature range between room temperature and $260^{\circ}C$, the packages processed with flip chip bonding and DAF bonding exhibited warpage values ranging from $-27{\mu}m$ to $60{\mu}m$ and from $-50{\mu}m$ to $-15{\mu}m$, respectively.

Wideband modulation analysis of a packaged semiconductor laser in consideration of the bonding wire effect (실장된 반도체 레이저의 본딩와이어를 고려한 광대역 변조 특성 해석)

  • 윤상기;한영수;김상배;이해영
    • Journal of the Korean Institute of Telematics and Electronics A
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    • v.33A no.2
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    • pp.148-162
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    • 1996
  • Bonding wires for high frequency device packaging have dominant parasitic inductances which limit the performance of semiconductor lasers. In this paper, the inductance sof bonding wires are claculated by the method of moments with incorporation of ohmic loss, and the wideband modulation characteristics are analyzed for ddifferent wire lengths and structures. We observed the modulation bandwidth for 1mm-length bonding wire lengths and structures. We observed the modulation bandwidth for 1mm-length bonding wire is 7 GHz wider than that for 2mm-length bonding wire. We also observed th estatic inductance calculation results in dispersive deviation of the parasitic inductance and the modulation characteristics from the wideband moment methods calculations. The angled bonding wire has much less parasitic inductance and improves the modulation bandwidth more than 6 GHz. This calculation resutls an be widely used for designing and packaging of high-speed semiconductor device.

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