• Title, Summary, Keyword: 채널도핑분포

Search Result 65, Processing Time 0.032 seconds

Analysis of Drain Induced Barrier Lowering of Asymmetric Double Gate MOSFET for Channel Doping Profile (비대칭 DGMOSFET의 채널도핑분포함수에 따른 드레인 유도 장벽 감소현상 분석)

  • Jung, Hakkee
    • Proceedings of the Korean Institute of Information and Commucation Sciences Conference
    • /
    • /
    • pp.863-865
    • /
    • 2015
  • 본 연구에서는 비대칭 이중게이트 MOSFET의 채널 내 도핑농도분포에 대한 드레인유도장벽감소(Drain Induced Barrier Lowering; DIBL)에 대하여 분석하고자한다. DIBL은 드레인 전압에 의하여 소스 측 전위장벽이 낮아지는 효과로서 중요한 단채널 효과이다. 이를 분석하기 위하여 포아송방정식을 이용하여 해석학적 전위분포를 구하였으며 전위분포에 영향을 미치는 채널도핑농도의 분포함수변화에 대하여 DIBL을 관찰하였다. 채널길이, 채널두께, 상하단 게이트 산화막 두께, 하단 게이트 전압 등을 파라미터로 하여 DIBL을 관찰하였다. 결과적으로 DIBL은 채널도핑농도분포함수의 변수인 이온주입범위 및 분포편차에 변화를 나타냈다. 특히 두 변수에 대한 DIBL의 변화는 최대채널도핑농도가 $10^{18}/cm^3$ 정도로 고도핑 되었을 경우 더욱 현저히 나타나고 있었다. 채널길이가 감소할수록 그리고 채널두께가 증가할수록 DIBL은 증가하였으며 하단 게이트 전압과 상하단 게이트 산화막 두께가 증가할수록 DIBL은 증가하였다.

  • PDF

Analysis of Subthreshold Swing for Doping Distribution Function of Asymmetric Double Gate MOSFET (도핑분포함수에 따른 비대칭 MOSFET의 문턱전압이하 스윙 분석)

  • Jung, Hakkee
    • Journal of the Korea Institute of Information and Communication Engineering
    • /
    • v.18 no.5
    • /
    • pp.1143-1148
    • /
    • 2014
  • This paper has analyzed the change of subthreshold swing for doping distribution function of asymmetric double gate(DG) MOSFET. The basic factors to determine the characteristics of DGMOSFET are dimensions of channel, i.e. channel length and channel thickness, and doping distribution function. The doping distributions are determined by ion implantation used for channel doping, and follow Gaussian distribution function. Gaussian function has been used as carrier distribution in solving the Poisson's equation. Since the Gaussian function is exactly not symmetric for top and bottome gates, the subthreshold swings are greatly changed for channel length and thickness, and the voltages of top and bottom gates for asymmetric double gate MOSFET. The deviation of subthreshold swings has been investigated for parameters of Gaussian distribution function such as projected range and standard projected deviation in this paper. As a result, we know the subthreshold swing is greatly changed for doping profiles and bias voltage.

Drain Induced Barrier Lowering of Asymmetric Double Gate MOSFET for Channel Doping Profile (비대칭 DGMOSFET의 도핑분포함수에 따른 DIBL)

  • Jung, Hakkee
    • Journal of the Korea Institute of Information and Communication Engineering
    • /
    • v.19 no.11
    • /
    • pp.2643-2648
    • /
    • 2015
  • This paper analyzes the phenomenon of drain induced barrier lowering(DIBL) for doping profiles in channel of asymmetric double gate(DG) MOSFET. The DIBL, the important short channel effect, is described as lowering of source barrier height by drain voltage. The analytical potential distribution is derived from Poisson's equation to analyze the DIBL, and the DIBL is observed according to the change of doping profile to influence on potential distribution. As a results, the DIBL is significantly influenced by projected range and standard projected deviation, the variables of channel doping profiles. The change of DIBL shows greatly in the range of high doping concentration such as $10^{18}/cm^3$. The DIBL increases with decrease of channel length and increase of channel thickness, and with increase of bottom gate voltage and top/bottom gate oxide film thickness.

Relation of Conduction Path and Subthreshold Swing for Doping Profile of Asymmetric Double Gate MOSFET (비대칭 DGMOSFET의 도핑분포함수에 따른 전도중심과 문턱전압이하 스윙의 관계)

  • Jung, Hakkee
    • Journal of the Korea Institute of Information and Communication Engineering
    • /
    • v.18 no.8
    • /
    • pp.1925-1930
    • /
    • 2014
  • This paper has analyzed the relation of conduction path and subthreshold swing for doping profile in channel of asymmetric double gate(DG) MOSFET. Since the channel size of asymmetric DGMOSFET is greatly small and number of impurity is few, the high doping channel is analyzed. The analytical potential distribution is derived from Possion's equation, and Gaussian distribution function is used as doping profile. The conduction path and subthreshold swing are derived from this analytical potential distribution, and those are investigated for variables of doping profile, projected range and standard projected deviation, according to the change of channel length and thickness. As a result, subthreshold swing is reduced when conduction path is approaching to top gate, and that is increased with a decrease of channel length and a increase of channel thickness due to short channel effects.

Analysis of Subthreshold Current Deviation for Channel Doping of Double Gate MOSFET (이중게이트 MOSFET의 채널도핑에 다른 문턱전압이하 전류 변화 분석)

  • Jung, Hakkee
    • Journal of the Korea Institute of Information and Communication Engineering
    • /
    • v.17 no.6
    • /
    • pp.1409-1413
    • /
    • 2013
  • This paper analyzed the change of subthreshold current for channel doping concentration of double gate(DG) MOSFET. Poisson's equation had been used to analyze the potential distribution in channel, and Gaussian function had been used as carrier distribution. The potential distribution was obtained as the analytical function of channel dimension, using the boundary condition. The subthreshold current had been analyzed for channel doping concentration, and projected range and standard projected deviation of Gaussian function. Since this analytical potential model was verified in the previous papers, we used this model to analyze the subthreshold current. As a result, we know the subthreshold current was influenced on parameters of Gaussian function and channel doping concentration for DGMOSFET.

Analysis of Subthreshold Current Deviation for Gate Oxide Thickness of Double Gate MOSFET (채널도핑농도에 따른 이중게이트 MOSFET의 문턱전압이하 전류 변화 분석)

  • Jung, Hakkee
    • Proceedings of the Korean Institute of Information and Commucation Sciences Conference
    • /
    • /
    • pp.768-771
    • /
    • 2013
  • This paper analyzed the change of subthreshold current for channel doping concentration of double gate(DG) MOSFET. Poisson's equation had been used to analyze the potential distribution in channel, and Gaussian function had been used as carrier distribution. The potential distribution was obtained as the analytical function of channel dimension, using the boundary condition. The subthreshold current had been analyzed for channel doping concentration, and projected range and standard projected deviation of Gaussian function. Since this analytical potential model was verified in the previous papers, we used this model to analyze the subthreshold current. As a result, we know the subthreshold current was influenced on parameters of Gaussian function and channel doping concentration for DGMOSFET.

  • PDF

Dependence of Subthreshold Current for Channel Structure and Doping Distribution of Double Gate MOSFET (DGMOSFET의 채널구조 및 도핑분포에 따른 문턱전압이하 전류의존성)

  • Jung, Hak-Kee
    • Journal of the Korea Institute of Information and Communication Engineering
    • /
    • v.16 no.4
    • /
    • pp.793-798
    • /
    • 2012
  • In this paper, dependence of subthreshold current has been analyzed for doping distribution and channel structure of double gate(DG) MOSFET. The charge distribution of Gaussian function validated in previous researches has been used to obtain potential distribution in Poisson equation. Since DGMOSFETs have reduced short channel effects with improvement of current controllability by gate voltages, subthreshold characteristics have been enhanced. The control of current in subthreshold region is very important factor related with power consumption for ultra large scaled integration. The deviation of threshold voltage has been qualitatively analyzed using the changes of subthreshold current for gate voltages. Subthreshold current has been influenced by doping distribution and channel dimension. In this study, the influence of channel length and thickness on current has been analyzed according to intensity and distribution of doping.

Analysis of Drain Induced Barrier Lowering of Asymmetric Double Gate MOSFET for Channel Doping Concentration (비대칭 DGMOSFET의 채널도핑농도에 따른 드레인 유도 장벽 감소현상 분석)

  • Jung, Hakkee;Kwon, Ohshin
    • Proceedings of the Korean Institute of Information and Commucation Sciences Conference
    • /
    • /
    • pp.858-860
    • /
    • 2015
  • 본 연구에서는 비대칭 이중게이트 MOSFET의 채널 내 도핑농도에 대한 드레인 유도 장벽 감소 현상에 대하여 분석하고자한다. 드레인 유도 장벽 감소 현상은 드레인 전압에 의하여 소스 측 전위장벽이 낮아지는 효과로서 중요한 단채널 효과이다. 이를 분석하기 위하여 포아송방정식을 이용하여 해석학적 전위분포를 구하였으며 전위분포에 영향을 미치는 채널도핑 농도뿐만이 아니라 상하단 산화막 두께, 하단 게이트 전압 등에 대하여 드레인 유도 장벽 감소 현상을 관찰하였다. 결과적으로 드레인 유도 장벽 감소 현상은 채널도핑 농도에 따라 큰 변화를 나타냈다. 단채널 효과 때문에 채널길이가 짧아지면 도핑농도에 따른 영향이 증가하였다. 도핑농도에 대한 드레인유도장벽감소 현상의 변화는 상하단 산화막 두께에 따라 큰 변화를 보였으며 산화막 두께가 증가할수록 도핑농도에 따른 변화가 증가하는 것을 알 수 있었다. 또한 하단게이트 전압은 그 크기에 따라 도핑농도의 영향이 변화하고 있다는 것을 알 수 있었다.

  • PDF

Movement of Conduction Path for Electron Distribution in Channel of Double Gate MOSFET (DGMOSFET에서 채널내 전자분포에 따른 전도중심의 이동)

  • Jung, Hak-Kee
    • Journal of the Korea Institute of Information and Communication Engineering
    • /
    • v.16 no.4
    • /
    • pp.805-811
    • /
    • 2012
  • In this paper, movement of conduction path has been analyzed for electron distribution in the channel of double gate(DG) MOSFET. The analytical potential distribution model of Poisson equation, validated in previous researches, has been used to analyze transport characteristics. DGMOSFETs have the adventage to be able to reduce short channel effects due to improvement for controllability of current by two gate voltages. Since short channel effects have been occurred in subthreshold region including threshold region, the analysis of transport characteristics in subthreshold region is very important. Also transport characteristics have been influenced on the deviation of electron distribution and conduction path. In this study, the influence of electron distribution on conduction path has been analyzed according to intensity and distribution of doping and channel dimension.

Analysis of Subthreshold Swing for Channel Length of Asymmetric Double Gate MOSFET (비대칭 DGMOSFET의 채널길이에 대한 문턱전압이하 스윙 분석)

  • Jung, Hakkee;Lee, Jongin;Cheong, Dongsoo
    • Proceedings of the Korean Institute of Information and Commucation Sciences Conference
    • /
    • /
    • pp.745-748
    • /
    • 2014
  • 본 연구에서는 비대칭 이중게이트(double gate; DG) MOSFET의 채널길이에 대한 문턱전압이하 스윙의 변화에 대하여 분석하였다. 문턱전압이하 스윙은 트랜지스터의 디지털특성을 결정하는 중요한 요소로서 채널길이가 감소하면 특성이 저하되는 문제가 나타나고 있다. 이러한 문제를 해결하기 위하여 개발된 DGMOSFET의 문턱전압이하 스윙의 채널길이에 대한 변화를 채널두께, 산화막두께, 상하단 게이트 전압 및 도핑농도 등에 따라 조사하고자 한다. 특히 하단 게이트 구조를 상단과 달리 제작할 수 있는 비대칭 DGMOSFET에 대하여 문턱전압이하 스윙을 분석함으로써 하단 게이트 전압 및 하단 산화막 두께 등에 대하여 자세히 관찰하였다. 문턱전압이하 스윙의 해석학적 모델을 구하기 위하여 포아송방정식에서 해석학적 전위분포모델을 유도하였으며 도핑분포함수는 가우스분포함수를 사용하였다. 결과적으로 문턱전압이하 스윙은 상하단 게이트 전압 및 채널도핑농도 그리고 채널의 크기에 매우 민감하게 변화하고 있다는 것을 알 수 있었다.

  • PDF