• Title, Summary, Keyword: AZO

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Photoelectric Conversion Properties of Dye-sensitized Solar Cell in the Transparent Electrode of Textured-AZO/AZO/Glass (Textured-AZO/AZO/Glass 투명전극을 갖는 염료감응 태양전지의 광전변환 특성)

  • Xu, Bing;Park, Choon-Bae;Hoang, Geun-C.
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.25 no.1
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    • pp.37-43
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    • 2012
  • We were studied that AZO conductive thin film can substitute for FTO electrode in dye sensitized solar cell. Three types of AZO films were deposited on soda-lime glass(AZO/glass, AZO/AZO/glass, textured AZO/AZO/glass) using RF magnetron sputtering process and investigated their properties of electrical, optical, and photoelectric conversion rate. The textured AZO/AZO/glass has the lowest resistivity of $3.079{\times}10^{-4}\;{\Omega}cm$ among other films. And the optical transmittance rate was better than both non textured AZO/AZO/glass and FTO/glass in the visible region. After manufacturing dye solar cells using the three types of AZO films, the textured AZO/AZO/glass showed the highest photoelectric conversion rate of 3.68% among AZO samples. But the transformation rate was slightly lower than FTO cells (4.52%). However, the conductive film of textured AZO/AZO/glass can be applicable to use an electrode in solar cells as cost-effective products.

Synthesis and Characterization of Reactive Liquid Crystalline Compounds with Azo-mesogenic Groups at the 4-, 3,5-, or 3,4,5-Positions of Phenyl Ring (페닐고리의 4-, 3,5-, 또는 3,4,5-위치에 아조-메소젠기를 갖는 반응성 액정화합물의 합성 및 특성)

  • Park, Jong-Ryul;Yoon, Doo-Soo;Bang, Moon-Soo
    • Applied Chemistry for Engineering
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    • v.30 no.2
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    • pp.247-253
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    • 2019
  • In this study, compounds with azo-mesogenic groups at 4-, 3,5-, or 3,4,5-positions of one phenyl ring were synthesized, and their liquid crystallinity and photochemistry were investigated. The compounds in the Azo1 and Azo2 series had linear and planar geometries, respectively, while those in the Azo3 series had relatively bulky structures. Compounds of BA-Azo2 and BA-Azo3 did not show any liquid crystallinity. Compounds of BE-Azo1 and BE-Azo2 exhibited a monotropic liquid crystallinity, while the other compounds showed an enantiotropic liquid crystallinity. The liquid crystalline behavior was imparted by the azo-mesogenic groups, and most of the liquid crystalline compounds formed a smectic phase. All the RM-AzoX compounds exhibited photoisomerism because of the presence of the azo groups in the molecule. The rate of photoisomerization followed the order of RM-Azo3 < RM-Azo1 < RM-Azo2 and was considered to depend on the steric hindrance around the azobenzene groups in the molecule. These results suggest that the liquid crystallinity and photochemical property of the compounds are affected by the position or the number of azo-mesogenic groups phenyl ring of the molecule.

Influence of Ag thickness on properties of AZO/Ag/AZO Multi-layer Thin Films (AZO/Ag/AZO 다층박막의 Ag두께에 따른 특성 연구)

  • Yeon, Je ho;Kim, Hong Bae
    • Journal of the Semiconductor & Display Technology
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    • v.16 no.2
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    • pp.27-31
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    • 2017
  • AZO/Ag/AZO multi-layer films deposited on glass substrate by RF magnetron sputtering and thermal evaporator have a much better electrical properties than Al-doped ZnO thin films. The multi-layer structure consisted of three layers, AZO/Ag/AZO, the electrical and optical properties of AZO/Ag/AZO were changed mainly by thickness of Ag layers. The optimum thickness of Ag layers was determined to be $90{\AA}$ for high optical transmittance and good electrical conductivity. The Ag layers thickness $90{\AA}$ is an optical transmittance greater than 80% of visible light and the obtained multilayer thin film with the low resistivity of $8.05{\times}10-3{\Omega}cm$ and the low sheet resistance $5.331{\Omega}/sq$. Applying to TCO and Solar electrode will improve efficiency.

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Properties of AZO/Ag/AZO Multilayer Thin Film Deposited on Polyethersulfone Substrate

  • Jung, Yu Sup;Park, Yong Seo;Kim, Kyung Hwan;Lee, Won-Jae
    • Transactions on Electrical and Electronic Materials
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    • v.14 no.1
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    • pp.9-11
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    • 2013
  • The AZO/Ag/AZO multilayer films were deposited on polyethersulfone (PES) substrate by using facing target sputtering methods at room temperature. The AZO/Ag/AZO multilayer films with polymer substrate had advantages, such as low sheet resistance, high optical transmittance in visible range and stable mechanical properties. From the results, the AZO/Ag/AZO multilayer films (50/12/50 nm) demonstrated a sheet resistance of 11 ${\Omega}/{\square}$ and average transmittance of 87% in visible range (wavelength of 380-770 nm). Moreover, the multilayer showed stable mechanical properties compared to the single-layered AZO sample during the bending test due to the existence of the ductile Ag metal layer.

Influence of Ag Thickness on Electrical and Optical Properties of AZO/Ag/AZO Multi-layer Thin Films by RF Magnetron Sputtering (RF magnetron sputter에 의해 제조된 AZO/Ag/AZO 다층박막의 Ag 두께가 전기적 광학적 특성에 미치는 영향)

  • An Jin-Hyung;Kang Tea-Won;Kim Dong-Won;Kim Sang-Ho
    • Journal of the Korean institute of surface engineering
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    • v.39 no.1
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    • pp.9-12
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    • 2006
  • Al-doped ZnO(AZO)/Ag/AZO multi-layer films deposited on PET substrate by RF magnetron sputtering have a much better electrical properties than Al-doped ZnO single-layer films. The multi-layer structure consisted of three layers, AZO/Ag/AZO, the optimum thickness of Ag layers was determined to be $112{\AA}$ for high optical transmittance and good electrical conductivity. With about $1800{\AA}$ thick AZO films, the multi-layer showed a high optical transmittance in the visible range of the spectrum. The electrical and optical properties of AZO/Ag/AZO were changed mainly by thickness of Ag layers. A high quality transparent electrode, having a resistance as low as $6\;W/{\square}$ and a high optical transmittance of 87% at 550 nm, was obtained by controlling Ag deposition parameters.

Correlation Between Energy Gap and Defect Formation of Al Doped Zinc Oxide on Carbon Doped Silicon Oxide

  • Oh, Teresa;Kim, Chy Hyung
    • Transactions on Electrical and Electronic Materials
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    • v.15 no.4
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    • pp.207-212
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    • 2014
  • Aluminum-doped zinc oxide (AZO) films were deposited on SiOC/Si wafer by an RF-magnetron sputtering system, by varying the deposition parameters of radio frequency power from 50 to 200 W. To assess the correlation of the optical properties between the substrate and AZO thin film, photoluminescence was measured, and the origin of deep level emission of AZO thin films grown on SiOC/Si wafer was studied. AZO formed on SiOC/Si substrates exhibited ultraviolet emission due to exciton recombination, and the visible emission was associated with intrinsic and extrinsic defects. For the AZO thin film deposited on SiOC at low RF-power, the deep level emission near the UV region is attributed to an increase of the variations of defects related to the AZO and SiOC layers. The applied RF-power influenced an energy gap of localized trap state produced from the defects, and the gap increased at low RF power due to the formation of new defects across the AZO layer caused by lattice mismatch of the AZO and SiOC films. The optical properties of AZO films on amorphous SiOC compared with those of AZO film on Si were considerably improved by reducing the roughness of the surface with low surface ionization energy, and by solving the problem of structural mismatch with the AZO film and Si wafer.

Characteristics of an AZO/Ag/AZO Transparent Conducting Electrode Fabricated by Magnetron Sputtering for Application in Cu2ZnSn(S,Se)4 (CZTSSe) Solar Cells (Cu2ZnSn(S,Se)4 (CZTSSe) 박막 태양전지 적용을 위한 마그네트론 스퍼터링으로 증착된 AZO/Ag/AZO 투명전극의 특성)

  • Lee, Dong Min;Jang, Jun Sung;Kim, Jihun;Lee, InJae;Lee, Byeong Hoon;Jo, Eunae;Kim, Jin Hyeok
    • Korean Journal of Materials Research
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    • v.30 no.6
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    • pp.285-291
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    • 2020
  • Recent advances in technology using ultra-thin noble metal film in oxide/metal/oxide structures have attracted attention because this material is a promising alternative to meet the needs of transparent conduction electrodes (TCE). AZO/Ag/AZO multilayer films are prepared by magnetron sputtering for Cu2ZnSn(S,Se)4 (CZTSSe) of kesterite solar cells. It is shown that the electrical and optical properties of the AZO/Ag/AZO multilayer films can be improved by the very low resistivity and surface plasmon effects due to the deposition of different thicknesses of Ag layer between oxide layers fixed at AZO 30 nm. The AZO/Ag/AZO multilayer films of Ag 15 nm show high mobility of 26.4 ㎠/Vs and low resistivity and sheet resistance of 3.58⁎10-5 Ωcm and 5.0 Ω/sq. Also, the AZO/Ag (15 nm)/AZO multilayer film shows relatively high transmittance of more than 65 % in the visible region. Through this, we fabricated CZTSSe thin film solar cells with 7.51 % efficiency by improving the short-circuit current density and fill factor to 27.7 mV/㎠ and 62 %, respectively.

Si Based Photoelectric Device with ITO/AZO Double Layer (ITO/AZO 투명전극을 이용한 Si 기반의 광전소자)

  • Jang, Hee-Joon;Yoon, Han-Joon;Lee, Gyeong-Nam;Kim, Joondong
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.31 no.2
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    • pp.85-89
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    • 2018
  • In this study, functional transparent conducting layers were investigated for Si-based photoelectric applications. Double transparent conductive oxide (TCO) films were deposited on a Si substrate in the sequence of indium tin oxide (ITO) followed by aluminum-doped zinc oxide (AZO). First, we observed that the conductivity and transparency of AZO dominate the overall performance of the double TCO layers. Secondly, the double layered TCO film (consisting of AZO/ITO) deposited by sputtering was compared to a AZO-only film in terms of their optical and electrical properties. We prepared three different AZO films: ITO:3min/AZO:10min, ITO:5min/AZO:7min, and ITO:7min/AZO:4min. The results show that the optical properties (transmittance, absorbance, and reflection) can be controlled by the film composition. This may provide a significant pathway for the manipulation of the optical and electrical properties of photoelectric devices.