• Title, Summary, Keyword: Amorphous Si-C-N

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Microstructure and Mechanical Properties of Superhard Cr-Si-C-N Coatings Prepared by a Hybrid Coating System (하이브리드 코팅 시스템으로 제조된 초고경도 Cr-Si-C-N 나노복합 코팅막의 미세구조 및 기계적 특성)

  • Jang Chul Sik;Heo Su Jeong;Song Pung Keun;Kim Kwang Ho
    • Journal of the Korean institute of surface engineering
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    • v.38 no.3
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    • pp.100-105
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    • 2005
  • Cr-Si-C-N coatings were deposited on steel substrate (SKD 11) by a hybrid system of arc ion plating (AIP) and sputtering techniques. From XRD, XPS, and HRTEM analyses, it was found that Cr-Si-C-N had a fine composite microstructure comprising nano-sized crystallites of Cr(C, N) well distributed in the amorphous phase of $Si_3N_4/SiC$ mixture. Microhardness of Cr(C, N) coatings and Cr-Si-N coatings were reported about $\~22 GPa$ and $\~35 GPa$, respectively. As the Si was incorporated into Cr(C, N) coatings, The Cr-Si-C-N coatings having a Si content of $9.2 at.\%$ showed the maximum hardness value. As increased beyond Si content of $9.2 at.\%$, the interaction between nanocrystallites and amorphous phase was gone, the hardness was reduced as dependent on amorphous phase of $Si_3N_4/SiC$. In addition, the average coefficient of Cr-Si-C-N coatings largely decreased compared with Cr(C, N) coatings.

A Study of Optimization a-Si:H(p) for n-type c-Si Heterojunction Solar Cell (N-Type c-Si 이종접합 태양전지 제작을 위한 a-Si:H(p) 가변 최적화)

  • Heo, Jong-Kyu;Yoon, Ki-Chan;Choi, Hyung-Wook;Lee, Young-Suk;Dao, Vinh Ai;Kim, Young-Kuk;Yi, Jun-Sin
    • 한국신재생에너지학회:학술대회논문집
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    • pp.77-79
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    • 2009
  • Amorphous/crystalline silicon heterojunction solar cells, TCO/a-Si:H (p)/c-Si(n)/a-Si:H(n)/Al, are investigated. The influence of various parameters for the front structures was studied. We used thin (10 nm) a-Si:H(p) layers of amorphous hydrogenated silicon are deposited on top of a thick ($500{\mu}m$) crystalline c-Si wafer. This work deals with the influence of the a-Si:H(p) doping concentration on the solar cell performance is studied.

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Amorphous Silicon Carbon Nitride Films Grown by the Pulsed Laser Deposition of a SiC-$Si_3N_4$ Mixed Target

  • Park, Nae-Man;Kim, Sang-Hyeob;Sung, Gun-Yong
    • ETRI Journal
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    • v.26 no.3
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    • pp.257-261
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    • 2004
  • We grew amorphous SiCN films by pulsed laser deposition using mixed targets. The targets were fabricated by compacting a mixture of SiC and $SiC-{Si_3}{N_4}$ powders. We controlled the film stoichiometry by varying the mixing ratio of the target and the target-to-substrate distance. The mixing ratio of the target had a dominant effect on the film composition. We consider the structures of the SiCN films deposited using 30~70 wt.% SiC in the target to be an intermediate phase of SiC and $SiN_x$. This provides the possibility of growing homogeneous SiCN films with a mixed target at a moderate target-to-substrate distance.

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Processing of $Si_3N_4/SiC$ and Boron-Modified Nanocomposites Via Ceramic Precursor Route

  • Lee, Hyung-Bock;Rajiv S. Mishra;Matt J. Gasch;Han, Young-Hwan;Amiya K. Mukherjee
    • The Korean Journal of Ceramics
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    • v.6 no.3
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    • pp.245-249
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    • 2000
  • Consolidation of amorphous powders is emerging as a route for synthesis of high strength composite materials. Diffusion processes necessary for consolidation are expected to be more rapid in amorphous state(SRO) than in the crystalline state(LRO). A new synthesis technique of exploiting polymeric ceramic precursors(polysilazane and polyborosilazane) is derived for Si$_3$N$_4$/SiC and boron-modified nanocomposites for extremely high temperature applications up to 200$0^{\circ}C$. The characterization methods include thermal analysis of DTA, and XRD, NMR, TEM, after pyrolysis, as a function of time and temperature.

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High temperature air-oxidation of CrAlSiN thin films (CrAlSiN 박막의 대기중 고온산화)

  • Hwang, Yeon-Sang;Won, Seong-Bin;Chunyu, Xu;Kim, Seon-Gyu;Lee, Dong-Bok
    • Proceedings of the Korean Institute of Surface Engineering Conference
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    • pp.53-54
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    • 2013
  • Nano-multilayered CrAlSiN films consisting of crystalline CrN nanolayers and amorphous AlSiN nanolayers were deposited by cathodic arc plasma deposition. Their oxidation characteristics were studied between 600 and $1000^{\circ}C$ for up to 70 h in air. During their oxidation, the amorphous AlSiN nanolayers crystallized. The formed oxides consisted primarily of $Cr_2O_3$, ${\alpha}-Al_2O_3$, $SiO_2$. The outer $Al_2O_3$ layer formed by outward diffusion of Al ions. Simultaneously, an inner ($Al_2O_3$, $Cr_2O_3$)-mixed layer formed by the inward diffusion of oxygen ions. $SiO_2$ was present mainly in the lower part of the oxide layer due to its immobility. The CrAlSiN films displayed good oxidation resistance, owing to the formation of oxide crystallites of $Cr_2O_3$, ${\alpha}-Al_2O_3$, and amorphous $SiO_2$.

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Densification of Ultrafine $Si_3-N_4-SiC$ Powder Compacts by Rapid Heating under Controlled Thermograms (급속가열 이력 제어에 의한 $Si_3-N_4-SiC$계 미분말 시편의 치밀화)

  • 이형직
    • Journal of the Korean Ceramic Society
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    • v.32 no.7
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    • pp.832-838
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    • 1995
  • The densifying behavior of ultrafine amorphous Si3N4 (about 20 nm)-$\beta$-SiC (about 40~80 nm) powders (O2 : 1.3~15wt%, 0$700^{\circ}C$ within 15 sec and then immediately cooled and held at 135$0^{\circ}C$ for 10 min in N2 atmosphere without resorting to additives using a Xe image heating apparatus. Using an ultrafine pure Si3N4 powder with particle size less than 30nm, further more, mixed with an appropriate amount of $\beta$-SiC, was found to be advantageous to obtain uniform and homogeneous microstructure. In addition, ultrafine Si3N4 powders were also proved to be effective as sintering additive on densifying large sized Si3N4 powder compacts.

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Microstructure and Mechanical Properties of Cr-Mo-Si-C-N Coatings Deposited by a Hybrid Coating System (하이브리드 코팅시스템에 의해 제조된 Cr-Mo-Si-C-N 박막의 미세구조 및 기계적 특성연구)

  • Yun, Ji-Hwan;Ahn, Sung-Kyu;Kim, Kwang-Ho
    • Journal of the Korean institute of surface engineering
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    • v.40 no.6
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    • pp.279-282
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    • 2007
  • Cr-Mo-Si-C-N coatings were deposited on steel and Si wafer by a hybrid system of AIP and sputtering techniques using Cr, Mo and Si target in $Ar/N_2/CH_4$ gaseous mixture. Instrumental analyses of XRD and XPS revealed that the Cr-Mo-Si-C-N coatings must be a composite consisting of fine(Cr, Mo and Si)(C and N) crystallites and amorphous $Si_3N_4$ and SiC. The hardness value of Cr-Mo-Si-C-N coatings significantly increased from 41 GPa of Cr-Mo-C-N coatings to about 53 GPa with Si content of 9.3 at.% due to the refinement of (Cr, Mo and Si)(C and N) crystallites and the composite microstructure characteristics. A systematic investigation of the microstructures and mechanical properties of Cr-Mo-Si-C-N coatings prepared with various Si contents is reported in this paper.

Fabrication and Characteristics of Magnetic Tunneling Transistors using the Amorphous n-Type Si Films (비정질 n형 Si 박막을 이용한 자기터널링 트랜지스터 제작과 특성)

  • Lee, Sang-Suk;Lee, Jin-Yong;Hwang, Do-Guwn
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.18 no.3
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    • pp.276-283
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    • 2005
  • Magnetic tunneling transistor (MTT) device using the amorphous n-type Si semiconductor film for base and collector consisting of the [CoFe/NiFe](free layer) and Si(top layer) multilayers was used to study the spin-dependent hot electron magnetocurrent (MC) and tunneling magnetoresistance (TMR) at room temperature. A large MC of 40.2 % was observed at the emitter-base bias voltage ( $V_{EB}$ ) of 0.62 V. The increasing emitter hot current and transfer ratio ( $I_{C}$/ $I_{E}$) as $V_{EB}$ are mainly due to a rapid increase of the number of conduction band states in the Si collector. However, above the $V_{EB}$ of 0.62 V, the rapid decrease of MC was observed in amorphous Si-based MTT because of hot electron spin-dependent elastic scattering across CoFe/Si interfaces.

Epitaxial Growth of CoSi2 Layer on (100)Si Substrate using CoNx Interlayer deposited by Reactive Sputtering (반응성 스퍼터링법으로 증착된 CoNx 중간층을 이용한 (100)Si 기판 위에서의 에피택셜 CoSi2 성장 연구)

  • Lee, Seung-Ryul;Kim, Sun-Il;Ahn, Byung-Tae
    • Korean Journal of Materials Research
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    • v.16 no.1
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    • pp.30-36
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    • 2006
  • A novel method was proposed to grow an epitaxial $CoSi_2$ on (100)Si substrate. A $CoN_x$ interlayer was deposited by reactive sputtering of Co in an Ar+$N_2$ flow. From the Ti/Co/$CoN_x$/Si structure, a uniform and thin $CoSi_2$ layer was epitaxially grown on (100)Si by annealing above $700^{\circ}C$. Two amorphous layers were found at the $CoN_x$/Si interface, where the top layer has a silicon nitride (Si-N) bonding state with some Co content and the bottom layer has a Co-Si intermixing state. The SiNx amorphous layer seems to play a critical role of suppressing the diffusion of Co into Si substrate for the direct formation of epitaxial $CoSi_2$.

Hydrogeneted Amorphous Carbon Nitride Films on Si(100) Deposited by DC Saddle Field Plasma Enhanced Chemical Vapor Deposition ($N_2/CH_4$가스비에 따른 Hydrogenated Amorphous Carbon Nitride 박막의 특성)

  • 장홍규;김근식;황보상우;이연승;황정남;유영조;김효근
    • Journal of the Korean Vacuum Society
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    • v.7 no.3
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    • pp.242-247
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    • 1998
  • Hydrogenated amorphous carbon nitride[a-C:H(N)] films were deposited on p-type Si(100) at room temperature with bias voltage of 200 V by DC saddle-field plasma-enhanced chemical vapor deposition. Effects of the ratio of $N_2$ to $CH_4$($N_2/CH_4$), in the range of 0 and 4 on such properties as optical properties, microstucture, relative fraction of nitrogen and carbon, etc. of the films have been investigated. The thickness of the a-C:H(N) film was abruptly decreased with the addition of nitrogen, but at $N_2/CH_4$>0.5, the thickness of the film gradually decreased with the increase of the $N_2/CH_4$. The ratio of N to C(N/C) of the films was saturated at 0.25 with the increase of $N_2CH_4$. N-H, C≡N bonds of the films increased but C-H bond decreased with the increase of $N_2CH_4$.Optical band gap energy of the film decreased from 2.53 eV at the ratio of $N_2CH_4$=4.

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