• Title, Summary, Keyword: Breakdown voltage

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Statistical Analysis of Electrical Tree Inception Voltage, Breakdown Voltage and Tree Breakdown Time Data of Unsaturated Polyester Resin

  • Ahmad, Mohd Hafizi;Bashir, Nouruddeen;Ahmad, Hussein;Piah, Mohamed Afendi Mohamed;Abdul-Malek, Zulkurnain;Yusof, Fadhilah
    • Journal of Electrical Engineering and Technology
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    • v.8 no.4
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    • pp.840-849
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    • 2013
  • This paper presents a statistical approach to analyze electrical tree inception voltage, electrical tree breakdown voltage and tree breakdown time of unsaturated polyester resin subjected to AC voltage. The aim of this work was to show that Weibull and lognormal distribution may not be the most suitable distributions for analysis of electrical treeing data. In this paper, an investigation of statistical distributions of electrical tree inception voltage, electrical tree breakdown voltage and breakdown time data was performed on 108 leaf-like specimen samples. Revelations from the test results showed that Johnson SB distribution is the best fit for electrical tree inception voltage and tree breakdown time data while electrical tree breakdown voltage data is best suited with Wakeby distribution. The fitting step was performed by means of Anderson-Darling (AD) Goodness-of-fit test (GOF). Based on the fitting results of tree inception voltage, tree breakdown time and tree breakdown voltage data, Johnson SB and Wakeby exhibit the lowest error value respectively compared to Weibull and lognormal.

Analysis of Breakdown Voltage Dispersion and Breakdown Process in Mineral Oil (광유 중 절연파괴전압의 분산과 절연파괴진전 과정의 분석)

  • Lim, Dong-Young;Park, Sung-Gyu;Park, Cheol-Ho;Kim, Ki-Chai;Lee, Kwang-Sik;Choi, Eun-Hyeok
    • Journal of the Korean Institute of Illuminating and Electrical Installation Engineers
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    • v.29 no.6
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    • pp.35-41
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    • 2015
  • This paper presents a breakdown voltage and a process of breakdown progress in mineral oil under an quasi-uniform field with decomposition products which occur after the oil discharge. The breakdown voltage in the oil revealed the characteristics of dispersion regardless of an electrode gap. The cumulative probability distribution was used to analyze the dispersion of the breakdown voltage. In addition, the process of breakdown progress in the oil can be reasonably described by the electron breakdown theory based on both electrons emitted from the cathode and ions by field-aided dissociation of the oil. The proposed breakdown process will be used for the basic data to explain the behavior pattern of the decomposition product to cause the dispersion of the breakdown voltage.

Copper Particle Effect on the Breakdown Strength of Insulating Oil at Combined AC and DC Voltage

  • Wang, You-Yuan;Li, Yuan-Long;Wei, Chao;Zhang, Jing;Li, Xi
    • Journal of Electrical Engineering and Technology
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    • v.12 no.2
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    • pp.865-873
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    • 2017
  • Converter transformer is the key equipment of high voltage direct current transmission system. The solid suspending particles originating from the process of installation and operation of converter transformer have significant influence on the insulation performance of transformer oil, especially in presence of DC component in applied voltage. Under high electric field, the particles easily lead to partial discharge and breakdown of insulating oil. This paper investigated copper particle effect on the breakdown voltage of transformer oil at combined AC and DC voltage. A simulation model with single copper particle was established to interpret the particle effect on the breakdown strength of insulating oil. The experimental and simulation results showed that the particles distort the electric field. The breakdown voltage of insulating oil contaminated with copper particle decreases with the increase of particle number, and the breakdown voltage and the logarithm of particle number approximately satisfy the linear relationship. With the increase of the DC component in applied voltage, the breakdown voltage of contaminated insulating oil decreases. The simulation results show that the particle collides with the electrode more frequently with more DC component contained in the applied voltage, which will trigger more discharge and decrease the breakdown voltage of insulating oil.

Analysis of Flat-Band-Voltage Dependent Breakdown Voltage for 10 nm Double Gate MOSFET

  • Jung, Hakkee;Dimitrijev, Sima
    • Journal of information and communication convergence engineering
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    • v.16 no.1
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    • pp.43-47
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    • 2018
  • The existing modeling of avalanche dominated breakdown in double gate MOSFETs (DGMOSFETs) is not relevant for 10 nm gate lengths, because the avalanche mechanism does not occur when the channel length approaches the carrier scattering length. This paper focuses on the punch through mechanism to analyze the breakdown characteristics in 10 nm DGMOSFETs. The analysis is based on an analytical model for the thermionic-emission and tunneling currents, which is based on two-dimensional distributions of the electric potential, obtained from the Poisson equation, and the Wentzel-Kramers-Brillouin (WKB) approximation for the tunneling probability. The analysis shows that corresponding flat-band-voltage for fixed threshold voltage has a significant impact on the breakdown voltage. To investigate ambiguousness of number of dopants in channel, we compared breakdown voltages of high doping and undoped DGMOSFET and show undoped DGMOSFET is more realistic due to simple flat-band-voltage shift. Given that the flat-band-voltage is a process dependent parameter, the new model can be used to quantify the impact of process-parameter fluctuations on the breakdown voltage.

Analysis for Breakdown Voltage of Double Gate MOSFET according to Device Parameters (소자파라미터에 따른 DGMOSFET의 항복전압분석)

  • Jung, Hakkee
    • Journal of the Korea Institute of Information and Communication Engineering
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    • v.17 no.2
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    • pp.372-377
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    • 2013
  • This paper have presented the breakdown voltage for double gate(DG) MOSFET. The analytical solution of Poisson's equation and Fulop's breakdown condition have been used to analyze for breakdown voltage. The double gate(DG) MOSFET has the advantage to reduce the short channel effects as improving the current controllability of gate. But we need the study for the breakdown voltage of DGMOSFET since the decrease of the breakdown voltage is unavoidable. To approximate with experimental values, we have used the Gaussian function as charge distribution for Poisson's equation, and the change of breakdown voltage has been observed for device geometry. Since this potential model has been verified in the previous papers, we have used this model to analyze the breakdown voltage. As a result to observe the breakdown voltage, the smaller channel length and the higher doping concentration become, the smaller the breakdown voltage becomes. Also we have observed the change of the breakdown voltage for gate oxide thickness and channel thickness.

Diamond Schottky Barrier Diodes With Field Plate (필드 플레이트가 설계된 다이아몬드 쇼트키 장벽 다이오드)

  • Chang, Hae Nyung;Kang, Dong-Won;Ha, Min-Woo
    • The Transactions of The Korean Institute of Electrical Engineers
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    • v.66 no.4
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    • pp.659-665
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    • 2017
  • Power semiconductor devices required the low on-resistance and high breakdown voltage. Wide band-gap materials opened a new technology of the power devices which promised a thin drift layer at an identical breakdown voltage. The diamond had the wide band-gap of 5.5 eV which induced the low power loss, high breakdown capability, low intrinsic carrier generation, and high operation temperature. We investigated the p-type pseudo-vertical diamond Schottky barrier diodes using a numerical simulation. The impact ionization rate was material to calculating the breakdown voltage. We revised the impact ionization rate of the diamond for adjusting the parallel-plane breakdown field at 10 MV/cm. Effects of the field plate on the breakdown voltage was also analyzed. A conventional diamond Schottky barrier diode without field plate exhibited the high forward current of 0.52 A/mm and low on-resistance of $1.71{\Omega}-mm$ at the forward voltage of 2 V. The simulated breakdown field of the conventional device was 13.3 MV/cm. The breakdown voltage of the conventional device and proposed devices with the $SiO_2$ passivation layer, anode field plate (AFP), and cathode field plate (CFP) was 680, 810, 810, and 1020 V, respectively. The AFP cannot alleviate the concentration of the electric field at the cathode edge. The CFP increased the breakdown voltage with evidences of the electric field and potential. However, we should consider the dielectric breakdown because the ideal breakdown field of the diamond is higher than that of the $SiO_2$, which is widely used as the passivation layer. The real breakdown voltage of the device with CFP decreased from 1020 to 565 V due to the dielectric breakdown.

Study on Electrical Characteristics According Process Parameters of Field Plate for Optimizing SiC Shottky Barrier Diode

  • Hong, Young Sung;Kang, Ey Goo
    • Transactions on Electrical and Electronic Materials
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    • v.18 no.4
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    • pp.199-202
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    • 2017
  • Silicon carbide (SiC) is being spotlighted as a next-generation power semiconductor material owing to the characteristic limitations of the existing silicon materials. SiC has a wider band gap, higher breakdown voltage, higher thermal conductivity, and higher saturation electron mobility than those of Si. When using this material to implement Schottky barrier diode (SBD) devices, SBD-state operation loss and switching loss can be greatly reduced as compared to that of traditional Si. However, actual SiC SBDs exhibit a lower dielectric breakdown voltage than the theoretical breakdown voltage that causes the electric field concentration, a phenomenon that occurs on the edge of the contact surface as in conventional power semiconductor devices. Therefore in order to obtain a high breakdown voltage, it is necessary to distribute the electric field concentration using the edge termination structure. In this paper, we designed an edge termination structure using a field plate structure through oxide etch angle control, and optimized the structure to obtain a high breakdown voltage. We designed the edge termination structure for a 650 V breakdown voltage using Sentaurus Workbench provided by IDEC. We conducted field plate experiments. under the following conditions: $15^{\circ}$, $30^{\circ}$, $45^{\circ}$, $60^{\circ}$, and $75^{\circ}$. The experimental results indicated that the oxide etch angle was $45^{\circ}$ when the breakdown voltage characteristics of the SiC SBD were optimized and a breakdown voltage of 681 V was obtained.

A Study on the Impulse Voltage Breakdown Characteristics of Heat-Deteriorated Polyethylene Cables ( I ) (열렬화된 폴리에틸렌 케이블의 충격전압에 의한 파괴특성에 관한 연구 I)

  • 곽영순
    • 전기의세계
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    • v.24 no.1
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    • pp.63-69
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    • 1975
  • This study investigated the characteristics of fatigue breakdown caused by the impulse voltage of heat treated polyethylene cables through fault currents. This study attempted to obtain the badic data on the insulation design by the repeated load of impulse voltage wave zone (1*40.mu.s) on heat treated polyethylene cables. Besides this study also analysed the data involving their durability by means of the Weibull distribution. An analysis of the breakdown characteristics based upon the repeated load of impulse voltage has revealed that worn out deteriorative breakdown existed at a high voltage near the initial breakdown voltage, and that random breakdown was discovered at a voltage somewhat lower than the initial breakdown voltage. These phenomena were more remarkable especially in the case of the higher temperature treated cables.

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SLI, AC Breakdown Voltage Characteristics of $SF_6/CF_4$ Mixtures Gas in Nonuniform Field (불평등전계에서 $SF_6/CF_4$ 혼합 가스의 SLI, AC 절연내력 특성)

  • Hwang, Cheong-Ho;Sung, Heo-Gyung;Huh, Chang-Su
    • The Transactions of The Korean Institute of Electrical Engineers
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    • v.57 no.2
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    • pp.245-251
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    • 2008
  • Although many studies have been carried out about binary gas mixtures with $SF_6$, few studies were presented about breakdown characteristics of $SF_6/CF_4$ mixtures. At present study the breakdown characteristics of $SF_6/CF_4$ mixtures in non-uniform field was performed. The experiments were carried out under AC voltage and standard lightning impulse(SLI) voltage. Breakdown characteristics were investigated for $SF_6/CF_4$ mixtures when AC voltages and standard lighting impulse voltage was applied in a needle-plane. The needle-plane electrode whose gap distance was 3 mm were used in a test chamber. $SF_6/CF_4$ mixtures contained from 0 to 100% $SF_6$ and the experimental gas pressure ranged from 0.1 to 0.5 MPa. The breakdown characteristics of $SF_6/CF_4$ mixtures in non-uniform field may be influenced by defects like needle-shaped protrusions. In case of slowly rising SLI voltage and AC voltage it is enhanced by corona-stabilization. This phenomena caused by the ion drift during streamer development and the resulting space-charge is investigated. In non-uniform field under negative SLI voltage the breakdown voltage was increase linearly but under positive SLI voltage the breakdown voltage increase non-linearly. The breakdown voltage in needle-plane electrode displayed N shape characteristics for increasing the content of $SF_6$ at AC voltage. $SF_6/CF_4$ mixture has good dielectric strength and arc-extinguishing properties than pure SF6. This paper presents experimental results on breakdown characteristics for various mixtures of $SF_6/CF_4$ at practical pressures. We could make an environment friendly gas insulation material with maintaining dielectric strength by combing $SF_6\;and\;CF_4$ which generates a lower lever of the global warming effect.

A Study on Breakdown Voltage of Double Gate MOSFET (DGMOSFET의 항복전압에 관한 연구)

  • Jung, Hak-Kee
    • Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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    • pp.693-695
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    • 2012
  • This paper have presented the breakdown voltage for double gate(DG) MOSFET. The analytical solution of Poisson's equation and Fulop's breakdown condition have been used to analyze for breakdown voltage. The double gate(DG) MOSFET as the device to be able to use until nano scale has the adventage to reduce the short channel effects. But we need the study for the breakdown voltage of DGMOSFET since the decrease of the breakdown voltage is unavoidable. To approximate with experimental values, we have used the Gaussian function as charge distribution for Poisson's equation, and the change of breakdown voltage has been observed for device geometry. Since this potential model has been verified in the previous papers, we have used this model to analyze the breakdown voltage. As a result to observe the breakdown voltage, the smaller channel length and the higher doping concentration become, the smaller the breakdown voltage becomes. Also we have observed the change od the breakdown voltage for gate oxide thickness and channel thickness.

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