• Title, Summary, Keyword: C-V characteristics

Search Result 2,694, Processing Time 0.062 seconds

Characteristics of C-V for Double gate MOSFET (Double gate MOSFET의 C-V 특성)

  • 나영일;김근호;고석웅;정학기;이재형
    • Proceedings of the Korean Institute of Information and Commucation Sciences Conference
    • /
    • /
    • pp.777-779
    • /
    • 2003
  • In this paper, we have investigated Characteristics of C-V for Double gate MOSFET with main gate and side gate. DG MOSFET has the main gate length of 50nm and the side gate length of 70nm. We have investigated characteristics of C-V and main gate voltage is changed from -5V to +5V. Also we have investigated characteristics of C-V for DG MOSFET when the side gate length is changed from 40nm to 90nm. As the side gate length is reduced, the transconductance is increased and the capacitance is reduced. When the side gate voltage is 3V, we know that C-V curves are bending at near the main gate voltage of 1.8V. We have simulated using ISE-TCAD tool for characteristics analysis of device.

  • PDF

Side gate length dependent C-V Characteristic for Double gate MOSFET (Side gate 길이에 따른 Double gate MOSFET의 C-V 특성)

  • 김영동;고석웅;정학기;이종인
    • Proceedings of the Korean Institute of Information and Commucation Sciences Conference
    • /
    • /
    • pp.661-663
    • /
    • 2004
  • In this paper, we have investigated characteristics of C-V for double gate MOSFET with main gate and side gate by the variation of side sate length and side gate voltage. Main gate voltage is changed from -5V to +5V. We know that characteristics of C-V is good under the condition of LSG=70nm, VSG=3V, VD=2V. We have analyze characteristics of device by ISE-TCAD.

  • PDF

The electrical properties of a Ti/SiC(4H) sehottky diode (Ti/SiC(4H) 쇼트키 장벽 다이오드의 전기적 특성)

  • 박국상;김정윤;이기암;장성주
    • Journal of the Korean Crystal Growth and Crystal Technology
    • /
    • v.7 no.3
    • /
    • pp.487-493
    • /
    • 1997
  • Ti/sic(4H) Schottky barrier diodes were fabricated. The donor concentration and the built-in potential obtained by capacitance-voltage(C-V) measurement was about $2.0{\times}10^{15}{\textrm}{cm}^{-3}$ and 0.65 V, respectively. The ideality factor of 1.07 was obtained from the slope of current-voltage(I-V) characteristics at low current density. The breakdown field under the reverse bias voltage was about $1.7{\times}10^3V/{\textrm}{cm}$ and was very high. The barrier height of Ti for SiC(4H) was 0.91 V, which was determined by the analysis of the saturation current-temperature and the C-V characteristics.

  • PDF

Electrical Characteristics on MOS Structure with Irradiation of Radiation (방사선이 조사된 MOS구조에서의 전기적 특성)

  • 임규성;고석웅;정학기
    • Proceedings of the Korean Institute of Information and Commucation Sciences Conference
    • /
    • /
    • pp.644-647
    • /
    • 2001
  • The investigations were discussed on the radiation effects of the electrical properties to the p-type MOS capacitors, which were irradiated by cobalt-60 gamma ray sources. The characteristics of capacitance-bias voltage(C-V) and of dielectric dissipation tarter-bias voltage(D-V) on the capacitors were measured at 1 [MHz] frequency. The microscopic behaviors of spate charges in oxide and silicon-silicon dioxide(Si- $SiO_2$) interface were investigated from the experimental data. The C-V characteristics are statical and convenient for the evaluation of the steady state behavior of carriers and interface states characteristics. While, the distribution and magnitude of space charges in oxide can be found out accurately on the $V_{dp}$ in D-V curves. The density of interface states can be deduced with ease from the magnitude of D-peak at depletion state. Thus, it is also concluded that the D-V curves are more useful and easier than conventional C-V curves for analysis of the microscopic and dynamic behavior of carriers in oxide and Si- $SiO_2$interface.

  • PDF

A Calculation of C-V Characteristics for ${Hg}_{1-x}{Cd}_{x}$Te MIS Device (${Hg}_{1-x}{Cd}_{x}$Te MIS 소자의 C-V 특성 계산)

  • 이상돈;김봉흡;강형부
    • The Transactions of the Korean Institute of Electrical Engineers
    • /
    • v.43 no.3
    • /
    • pp.420-431
    • /
    • 1994
  • The HgCdTe material, which is II-VI compound semiconductor, is important materials for the fabrication of the infrared detectros. To suggest the model of accurate MIS C-V calculation for narrow band gap semiconductors such as HgCdTe, non-parabolicity from k.p theory and degeneracy effect are considered. And partially ionized effect and compensation effect which are material's properties are also considerd. Especially, degenerated material C-V characteristics from Fermi-Dirac statistics and exact charge theory are presented to get more accurate analysis of the experimental results. Also the comparison with calculation results between the general MIS theory from Boltzmann appoximation method and this model which is considered the narrow band gap semiconductor properties, show that this model is more useful theory to determination of accurate low and high frequency C-V characteristics.

  • PDF

I-V and C-V measurements or fabricated P+/N junction mode in Antimony doped (111) Silicon

  • Jung, Won-Chae
    • Transactions on Electrical and Electronic Materials
    • /
    • v.3 no.2
    • /
    • pp.10-15
    • /
    • 2002
  • In this paper, the electrical characteristics of fabricated p+-n junction diode are demonstrated and interpreted with different theoretical calculations. Dopants distribution by boron ion implantation on silicon wafer were simulated with TRIM-code and ICECaEM simulator. In order to make electrical activation of implanted carriers, thermal annealing treatments are carried out by RTP method for 1min. at $1000^{circ}C$ under inert $N_2$ gas condition. In this case, profiles of dopants distribution before and after heat treatments in the substrate are observed from computer simulations. In the I-V characteristics of fabricated diodes, an analytical description method of a new triangular junction model is demonstrated and the results with calculated triangular junction are compared with measured data and theoretical calculated results of abrupt junction. Forward voltage drop with new triangular junction model is lower than the case of abrupt junction model. In the C-V characteristics of diode, the calculated data are compared with the measured data. Another I-V characteristics of diodes are measured after proton implantation in electrical isolation method instead of conventional etching method. From the measured data, the turn-on characteristics after proton implantation is more improved than before proton implantation. Also the C-V characteristics of diode are compared with the measured data before proton implantation. From the results of measured data, reasonable deviations are showed. But the C-V characteristics of diode after proton implantation are deviated greatly from the calculated data because of leakage currents in defect regions and layer shift of depletion by proton implantation.

Characteristics of Ni metallization on ICP-CVD SiG thin film and Ni/SiC Schottky diode (ICP-CVD로 성장된 SiC박막의 Ni 금속 접합과 Ni/SiC Schottky diode의 특성 분석)

  • Gil, Tae-Hyun;Kim, Yong-Sang
    • Proceedings of the KIEE Conference
    • /
    • /
    • pp.938-940
    • /
    • 1999
  • We have fabricated SiC Schottky diode for high temperature applications. SiC thin film for drift region has been deposited by ICP-CVD. In order to establish metallization conditions, we have extracted the device parameters of the Schottky diode from the forward I-V characteristics and the C-V characteristics as a function of temperature. The ideality factor was varied from 2.07 to 1.15 and the barrier height was also varied from 1.26eV to 1.92eV with increase of temperature. The reverse blocking voltage was 183 V.

  • PDF

A Study on the A.C.Breakdown Voltage-Temperature Characteristics for Air Insulated Power Installation (공기절연 전력설비를 위한 교류전로파괴전압-온도특성에 관한 연구)

  • 김상구;송현직;김영훈;이광식;이동인
    • The Proceedings of the Korean Institute of Illuminating and Electrical Installation Engineers
    • /
    • v.9 no.1
    • /
    • pp.47-53
    • /
    • 1995
  • In this paper, the characteristics of breakdown voltage($\textrm{V}_{Brms}$) -temperature(T) for air insulated power installation in flowing air with variation of T(30[$^{\circ}C$] -180[$^{\circ}C$]) are presented. To study these subjects, needle-to-needle gap in the circular pipe(inner diameter 5[cm]) are used. Also, theories of gas discharge and hydrodynamics in pipe were used to analysis for the characteristics. The $\textrm{V}_{Brms}$ is proportional to flow velocity. At high velocity, $\textrm{V}_{Brms}$ is described the saturation. At high T(180[$^{\circ}C$]), $\textrm{V}_{Brms}$ is about 4.7(kV] lower than low T(30[$^{\circ}C$]). The empirical equation obtained from this study is $\textrm{V}_{Brms}=A\times{Log[Re}+B$. Where A, B : Constant.

  • PDF

Potential barrier height of Metal/SiC(4H) Schottky diode (Metal/SiC(4H) 쇼트키 다이오드의 포텐셜 장벽 높이)

  • 박국상;김정윤;이기암;남기석
    • Journal of the Korean Crystal Growth and Crystal Technology
    • /
    • v.8 no.4
    • /
    • pp.640-644
    • /
    • 1998
  • We have fabricated Sb/SiC(4H) Schottky barrier diode (SBD) of which characteristics compared with that of Ti/SiC(4H) SBD. The donor concentration of the n-type SiC(4H) obtained by capacitance-voltage (C-V) measurement was about $2.5{\times}10 ^{17}{\textrm}cm^{-3}$. The ideality factors of 1.31 was obtained from the slope of forward current-voltage (I-V) characteristics of Sb/SiC(4H) SBD at low current density. The breakdown field of Sb/SiC(4H) SBD under the reverse bias voltage was about $4.4{\times}10^2V$/cm. The built-in potential and the Schottky barrier height (SBH) of Sb/SiC(4H) SBD were 1.70V and 1.82V, respectively, which were determined by the analysis of C-V characteristics. The Sb/SiC(4H) SBH of 1.82V was higher than Ti/SiC(4H) SBH of 0.91V. However, the current density and reverse breakdown field of Sb/SiC(4H) were low as compared with those of Ti/SiC(4H). The Sb/SiC(4H), as well as the Ti/SiC(4H), can be utilized as the Shottky barrier contact for the high-power electronic device.

  • PDF