• Title, Summary, Keyword: Copper Film

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Adhesion between Rubber Compound and Copper-Film-Coated Steel Plate Prepared by Vacuum Sputtering and Substitution Plating Methods (진공증착법과 치환도금법으로 제조한 구리박막 피복철판과 배합고무의 접착)

  • Moon, Kyung-Ho;Han, Min-Hyun;Seo, Gon
    • Journal of Adhesion and Interface
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    • v.4 no.3
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    • pp.1-8
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    • 2003
  • Adhesion between rubber compound and copper-film-coated steel plate (abbreviated hereafter as copper film plate) with different thicknesses of copper film was investigated. Two different methods were employed for the preparation of the copper film plates: a substitution plating of preelectroplated zinc with copper ion and a vacuum sputtering of copper on steel plate. Adhesion strength of the copper film plates with rubber compounds was largely dependent upon the thickness of copper film, regardless of their preparation methods. The copper film plates with thinner thickness than 75 nm showed high adhesion comparable to brass, while those with thicker copper film showed poor adhesion due to excessive growth of copper sulfide at adhesion interface.

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On Atmospheres for Firing the Thick Film Coper Conductors (Thick Film Copper Conductor 의 소결과 소성 분위기)

  • Lee, Joon
    • Applied Chemistry for Engineering
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    • v.2 no.3
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    • pp.193-198
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    • 1991
  • Thick film copper conductors are of considerable interest in thick film industries because of both the potential cost saving compared to the noble metal conductors and the favorable properties in electrical conductivity, solderability, solder leach resistance and wire bondability, However, formation of the excellent copper thick film is a lot complicated due to easily oxidizing property of copper at high temperature. In order to get favorable thick film copper conductor, hybrid microcircuit industry utilizes majorly three kinds of firing atmosphere, such as nitrogen atmosphere, reactive atmosphere and air atmosphere. The processes and the three atmospheres for firing thick film copper conductor were extensively reviewed in this article.

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Synthesis and Properties of CuNx Thin Film for Cu/Ceramics Bonding

  • Chwa, Sang-Ok;Kim, Keun-Soo;Kim, Kwang-Ho
    • The Korean Journal of Ceramics
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    • v.4 no.3
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    • pp.222-226
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    • 1998
  • $Cu_3N$ film deposited on silicon oxide substrate by r.f. reactive sputtering technique. Synthesis and properties of copper nitride film were investigated for its possible application to Cu metallization as adhesive interlayer between copper and $SiO_2. Cu_3N$ film was synthesized at the substrate temperature ranging from $100^{\circ}C$ to $200^{\circ}C$ and at nitrogen gas ratio above $X_{N2}=0.4. Cu_3N, CuN_x$, and FGM-structured $Cu/CuN_x$ films prepared in this work passed Scotch-tape test and showed improved adhesion property to silicon oxide substrate compared with Cu film. Electrical resistivity of copper nitride film had a dependency on its lattice constant and was ranged from 10-7 to 10-1 $\Omega$cm. Copper nitride film was, however, unstable when it was annealed at the temperature above $400^{\circ}C$.

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Electromagnetic Shielding Effectiveness of Melt-blown Nonwoven Fabric with Width and Interval of Thin Copper Film (구리박막의 넓이와 간격에 따른 melt-blown 부직포의 전자파 차폐 효과)

  • Shin Hyun Sae;Son Jun Sik;Kim Young Sang;Jeong Jin Soo
    • Textile Coloration and Finishing
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    • v.16 no.5
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    • pp.42-47
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    • 2004
  • The main objective of this work is to develop melt-blown nonwoven fabric composite materials have electromagnetic shielding characteristics using thin copper film. Melt-blown nonwoven fabric is the matrix phase and thin copper films are the reinforcement of the composite materials. Thin copper films are incorporated as conductive fillers to provide the electromagnetic shielding property of the melt-blown nonwoven fabric. The width and interval of thin copper films in the nonwoven fabric are varied by changing 1, 3, 5 mm for thin copper film's width and 1, 3, 5 mm for thin copper film's interval. The shielding effectiveness(SE) of various melt-blown nonwoven fabrics is measured in the frequency range of 50 MHz to 1.8 GHz. The variations of SE of melt-blown nonwoven fabric with width and interval of thin copper films are described. Suitability of melt-blown nonwoven fabric for electromagnetic shielding applications is discussed. The results indicate that the melt-blown nonwoven fabric composite material using thin copper film can be used for the purpose of electromagnetic shielding.

A study on the Glass Frit for Thick Film Copper Conductor (후막 구리도체용 유리에 관한 연구)

  • Lee, Joon;Lee, Sang Won
    • Applied Chemistry for Engineering
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    • v.2 no.3
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    • pp.289-299
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    • 1991
  • In order to obtain glasses appropriate to the thick film copper conductors, nine glasses based on both lead borosilicate and leadless borosilicate systems were made and the applicabilities of them were examined in conjunction with the requirements for thick film copper conductors. As the results, it was found that all the glasses are fitted to provide suitable sheet resistance, solderability and solder leach resistance to thick film copper conductors. However, it was turned out that only the lead borosilicate based glasses worked for getting usable aged adhesion strength of copper thick film to the alumina substrate, while copper conductor films made from the other glasses had poor aged adhesion strengths. Particularly cuprous oxide added lead borosilicate glass was considered as one of the most favorable glasses for manufacturing thick film copper conductors.

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Modification of Poly(ethylene Terephthalate)Film to Improve Electrical Conductivity (개질 폴리에틸렌테레프탈레이트 필름의 전기전도성)

  • 박재일;강은영
    • Textile Science and Engineering
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    • v.22 no.6
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    • pp.48-55
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    • 1985
  • Electrical conducting Poly(ethylene terephthalate)(PET)film was obtained by introducing Cu2-xS(0 x 0.2), which is known as p-type semiconductor, in the electrically insulating PET film. The cyano group was introduced into the PET film in order to accept Cu2-xS seim-conductor. Acrylonitrile having cyano group was utilized to carry out grafting on PET film using benzoyl peroxide as the initiator. Extent of grafting depended upon the reaction time, concentration of initiator, and the monomer as well as on the reaction temperature. It was also found that the optimum acrylonitrile concentration is 0.65mole/1. Acrylonitrile-grafted PET(AN-g-PET) film has a strong affinity for monovalent copperions. The PET film by graft polymerization with acrylonitrile is treated with copper compound, a reducing agent capable of reducing bivalent copper ions to monovalent copperions, and sulfur-containing compound so that the AN-g-PET film adsorbs monovalent copper ions and so that the adsorbed monovalent copper ions are converted into Cu2-xS. In the Cu2-xS-AN-g-PET film, vacant copper ion lattice points serve as the acceptor. The treated PET film had a metallic luster and its electrical resistivity was found to be 0.6$\times$103( -cm).

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Characteristic of Copper Films on PET Substrate Deposited by Cyclic Operation of RF-magnetron-sputtering Coupled with Continuous Operation of ECR-CVD (연속 ECR-CVD 조업하에 RF-magnetron-sputter의 싸이클조업을 통해 PET위에 올려진 구리박막의 특성)

  • Myung JongYun;Jeon Bupju;Byun Dongjin;Lee Joongkee
    • Korean Journal of Materials Research
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    • v.15 no.7
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    • pp.465-472
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    • 2005
  • Preparation of copper film on PET substrate was carried out by cyclic operation of RF-magnetron­sputtering under continuous operation of ECR-CVD. The purpose of this study is aimed to an increase in deposition rate with keeping excellent adhesion between copper film and PET. In order to optimize the sputtering time under continuous ECR-CVD, cyclic operation concept is employed. By changing parameters of cyclic operation such as split of e and cycle time of A, the characteristics and thickness of the deposited copper film are controlled. As $\theta$ value increase, film thickness could confirm to increase and its surface resistivity value decreases. The highest adhesive strength appears at $\theta=0.33$ and cycle time of 30 min. The uniformity of copper film shows $5\%$ in our experimental range.

Adhesion Improvement for Copper Process in TFT-LCD

  • Tu, Kuo-Yuan;Tsai, Wen-Chin;Lai, Che-Yung;Gan, Feng-Yuan;Liau, Wei-Lung
    • 한국정보디스플레이학회:학술대회논문집
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    • pp.1640-1644
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    • 2006
  • The first issue that should be overcome in copper process is its poor adhesive strength between pure copper film and glass substrate. In this study, defining the adhesive strength of pure copper film on various substrates and clarifying the key deposition parameters are presented for the investigation of copper process. First, using different kinds of surface plasma treatments were studied and the results showed that the adhesive strength was not improved even though the roughness of glass substrate surface was increased. Second, adding an adhesive layer between glass substrate and pure copper film was used to enhance the adhesion. Based on the data in the present paper, adopting copper alloy film as an adhesive layer can have capability preventing peeling problem in copper process. Besides, Cu/Cu alloy structure could be etched with the same etchant with better taper angle than the one with single layer of Cu. Unlike Cu/Mo structure, there is no residual problem for Cu/Cu alloy structure during etching process. Finally, this structure was examined in electrical test without significant difference in comparison with the conventional metal process.

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Effects of Organic Additives on Residual Stress and Surface Roughness of Electroplated Copper for Flexible PCB

  • Kim, Jongsoo;Kim, Heesan
    • Corrosion Science and Technology
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    • v.6 no.4
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    • pp.154-158
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    • 2007
  • For the application of flexible printed circuit board (FPCB), electroplated copper is required to have low surface roughness and residual stress. In the paper, the effects of surface roughness and residual stress of electroplated copper as thick as $8{\mu}m$ were studied on organic additives such as inhibitor, leveler and accelerator. Polyimide film coated with sputtered copper was used as a substrate. Surface roughness and surface morphology were measured by 3D-laser surface analysis and FESEM, respectively. Residual stress was calculated by Stoney's equation after measuring radius curvature of specimen. The addition of additives except high concentration of accelerator in the electrolyte decreased surface roughness of electroplated copper film. Such a tendency was explained by the function of additives among which the inhibitor and the leveler inhibit electroplating on a whole surface and prolusions, respectively. The accelerator plays a role in accelerating the electroplating in valley parts. The inhibitors and the leveler increased residual stress, whereas the accelerator decreased it. It was thought to be related with entrapped additives on electroplated copper film rather than the preferred orientation of electroplated copper film. The reason why additives lead to residual stress remains for the future work.

Effect of Alanine on Cu/TaN Selectivity in Cu-CMP (Cu-CMP에서 Alanine이 Cu와 TaN의 선택비에 미치는 영향)

  • Park Jin-Hyung;Kim Min-Seok;Paik Ungyu;Park Jea-Gun
    • Korean Journal of Materials Research
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    • v.15 no.6
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    • pp.426-430
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    • 2005
  • Chemical mechanical polishing (CMP) is an essential process in the production of integrated circuits containing copper interconnects. The effect of alanine in reactive slurries representative of those that might be used in copper CMP was studied with the aim of improving selectivity between copper(Cu) film and tantalum-nitride(TaN) film. We investigated the pH effect of nano-colloidal silica slurry containing alanine through the chemical mechanical polishing test for the 8(inch) blanket wafers as deposited Cu and TaN film, respectively. The copper and tantalum-nitride removal rate decreased with the increase of pH and reaches the neutral at pH 7, then, with the further increase of pH to alkaline, the removal rate rise to increase soddenly. It was found that alkaline slurry has a higher removal rate than acidic and neutral slurries for copper film, but the removal rate of tantalum-nitride does not change much. These tests indicated that alanine may improve the CMP process by controlling the selectivity between Cu and TaN film.