• Title, Summary, Keyword: Czochralski silicon crystal

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Thermal behavior of Flow Pattern Defect and Large Pit in Czochralski Silicon Crystals and Their Effects on Device Yield. (Czochralski 법으로 제조된 실리콘 단결정 내의 Flow Pattern Defect와 Large Pit의 열적 거동 및 소자 수율에의 영향)

  • 송영민;조기현;김종오
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • pp.17-20
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    • 1998
  • Thermal behavior of Flow Pattern Defect (FPD) and Large Pit (LP) in Czochralski Silicon crystals was investigated by applying high temperature ($\geq$1100$^{\circ}C$) annealing and non-agitation Secco etching. For evaluation of the effect of LP upon device performance / yield, DRAM and ASIC devices were fabricated. The results indicate that high temperature annealing generates LPs whereas it decreases FPD density drastically, and LP does not have detrimental effects on the performance /

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A Study on the Gettering in Czochralski-grown Single Crystal Silicon Wafer (Czochralski 법으로 성장시킨 실리콘 단결정 Wafer에서의 Gettering에 관한 연구)

  • 양두영;김창은;한수갑;이희국
    • Journal of the Korean Ceramic Society
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    • v.29 no.4
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    • pp.273-282
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    • 1992
  • The effects of intrinsic and extrinsic gettering on the formation of microdefects in the wafer and on the electrical performance at near-surfaces of three different oxygen-bearing Czochralski silicon single crystal wafers were investigated by varying the combinations of the pre-heat treatments and the phosphorus diffusion through the back-surface of the wafers. The wafers which had less than 10.9 ppma of oxygen formed no gettering zones irrespective of any pre-heat treatments, while the wafers which had more than 14.1 ppma of oxygen and were treated by Low+High pre-heat treatments generated the gettering zone comprising oxygen precipitates, staking faults, and dislocation loops. The effects of extrinsic gettering by phosphorus diffusion were evident in all samples such that the minority carrier lifetimes were increased and junction leakage currents were decreased. However, the total gettering effects among the different pre-heat treatments did not necessarily correspond to the gettering structure revealed by synchrotron radiation section topograph.

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The influence of mechanical damage on the formation of the structural defects on the silicon surface during oxidation (규소 결정 표면의 구조 결함의 형성에 미치는 기계적 손상의 영향)

  • Kim, Dae-Il;Kim, Jong-Bum;Kim, Young-Kwan
    • Journal of the Korean Crystal Growth and Crystal Technology
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    • v.15 no.2
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    • pp.45-50
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    • 2005
  • During oxidation process, several type of defects are formed on the surface of the silicon crystal which was damaged mechanically before oxidation. As the size of abrasive particle increases multiple dislocation loops are produced favorably over oxidation-induced stacking faults, which are dominantly produced when ground with finer abrasive particle. These defects are not related with the crystal growth process like Czochralski or directional solidification. During directional solidification process, twins and stacking faults are the two major defects observed in the bulk of the silicon crystal. On the other hand, slip dislocations produced by the thermal stress are not observed. Thus, not only in single crystalline silicon crystal but also in multi-crystalline silicon, extrinsic gettering process with programmed production of surface defects might be highly applicable to silicon wafers for purification.

Thermal Behavior of Flow Pattern Defect and Large Pit in Czochralski Silicon Crystals and Effects of Large Pit upon Device Yield (쵸크랄스키 Silicon 단결정의 Large Pit과 Flow Pattern defect의 열적 거동과 Large Pit의 소자 수율에의 영향)

  • Song, Yeong-Min;Mun, Yeong-Hui;Kim, Jong-O;Jo, Gi-Hyeon
    • Korean Journal of Materials Research
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    • v.11 no.9
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    • pp.781-785
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    • 2001
  • The thermal behavior of Flow Pattern Defect (FPD) and Large Pit (LP) in Czochralski Silicon crystal was investigated by applying high temperature annealing ($\geq$$1100^{\circ}C$) and non-agitated Secco etching. For evaluation of the effect of LP upon device performance/yield, commercial DRAM and ASIC devices were fabricated. The results indicated that high temperature annealing generates LPs whereas it decreases FPD density drastically. However, the origins of FPD and LP seemed to be quite different by not showing any correspondence to their density and the location of LP generation and FPD extinction. By not showing any difference between the performance/yield of devices whose design rule is larger than 0.35 $\mu\textrm{m}$, LP seemed not to have detrimental effects on the performance/yield.

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Effect of asymmetric magnetic fields on the interface shape in Czochralski silicon crystals (Cz 실리콘 단결정에서 비대칭 자기장이 고액 계면에 미치는 영향)

  • Hong, Young-Ho;Shim, Kwang-Bo
    • Journal of the Korean Crystal Growth and Crystal Technology
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    • v.18 no.4
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    • pp.140-145
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    • 2008
  • Silicon single crystals are grown by Czochralski (CZ) method in different growing conditions. The different shapes of the crystal-melt interface are obtained with various magnetic fields. Effects of zero-Gauss plane (ZGP) shape and magnetic intensity (MI) on the crystal-melt interface in the crystal experimentally are investigated. The shape of ZGP is not only flat but also parabolic, which is due to magnetic ratio (MR) of the lower to upper current densities in the configurations of the cusp-magnetic fields. As the MR increases, the crystal-melt interface becomes more concave. It means that the hot melt can be easily transported to the crystal-melt interface with increasing the MR. Effective shape of the crystal-melt interface is found to depend on the magnetic field in cusp-magnetic CZ method. The experimental results are compared with other studies and discussed.

A Cold model experiment on the thermal convection in the czochralski silicon single crystal growth process (저융점 금속을 사용한 초크랄스키 실리콘 단결정 성장 공정의 열유동 모사 실험)

  • 이상호;김민철;이경우
    • Journal of the Korean Crystal Growth and Crystal Technology
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    • v.9 no.2
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    • pp.149-156
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    • 1999
  • An experimental simulation on the flow in Czochralski melt using a cold model was carried out to obtain the velocities of fluid flow which affects the oxygen concentration of Czochralski crystal growing system. Low melting point Woods metal with similar Pr number to the silicon melt was adopted as a working fluid. Local flow velocities at numerous positions in the melt were simulataneously measured in three dimension using incorporated magnet probe. The measured velocity field showed a non-axisymmetric pattern dominated by natural convection. The analysis on the correlation between data set of temperatures simultaneously measured at two melt positions showed that the values of correlation coefficients were smaller than those of previous study on the small size of silicon melt and these phenomena are believed to occur because turbulent behavior becomes stronger in large size of the melt.

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Effect of crystal and crucible rotations on the mass transfer in magnetohydrodynamic Czochralski crystal growth of silicon (자기장이 가하여진 초크랄스키 실리콘 단결정 성장에서 질량전달에 미치는 성장결정과 도가니의 회전효과)

  • 김창녕
    • Journal of the Korean Crystal Growth and Crystal Technology
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    • v.7 no.4
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    • pp.536-547
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    • 1997
  • For various angular velocities of crucible and crystal, the characteristics of melt flows, temperatures and concentrations of oxygen are numerically studied in the Czochralski furnace with a uniform axial magnetic field. Buoyancy effect due to the heating of crucible wall and thermocapillary effect due to the temperature gradient at the free surface, can be differentiably suppressed by the centrifugal forces due to the rotations of the crucible and crystal. The most important factor which yields the centrifugal forces is the rotation velocity of the crucible, that influences the fields of velocities, temperatures and concentrations. In the case that the crucible rotation velocity is not high, the rotations of the crystal gives rise to the centrifugal forces effectively.

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A numerical study on the effects of the asymmetric cusp magnetic field in 8 inch silicon single crystal growth by Czochralski method (초크랄스키법에 의한 8인치 실리콘 단결정 성장시 비대칭 커스프자장의 영향에 관한 연구)

  • 이승철;정형태;윤종규
    • Journal of the Korean Crystal Growth and Crystal Technology
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    • v.6 no.1
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    • pp.1-10
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    • 1996
  • A numerical study was conducted on the effects of the cusp magnetic field in 8" silicon single crystal grwoth by Czochralski method. For a damping effects simulation by magnetic field, low reynolds number ${\kappa} - {\varepsilon}$ model was adopted. Symmetrci cusp magnetic field has a effect of damping streamline crystal, is lowerd with the increasing cusp magnetic field intensity. The uniformity of the oxygen concentration was improved. The asymmetirc cusp magnetic field increased the oxygen concentration however, oxygen concentration distribution in the radial direction was remained uniform. Suitable combination of symmetric and asymmetric cusp magnetic fields could give uniform and low oxygen concentration in the axial direction.tion.

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