• Title, Summary, Keyword: Dielectric material

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Implementation of Front End Module for 2.4GHz WLAN Band (2.4GHz 무선랜 대역을 위한 Front End Module 구현)

  • Lee, Yun-Sang;Ryu, Jong-In;Kim, Dong-Su;Kim, Jun-Chul;Park, Jong-Dae;Kang, Nam-Kee
    • Journal of the Microelectronics and Packaging Society
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    • v.15 no.1
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    • pp.19-25
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    • 2008
  • In this paper, the front end module (FEM) was proposed for 2.4GHz WLAN band by LTCC multilayer application. The FEM was composed of power amplifier IC, switch IC, and LTCC module. LTCC module consists of output matching circuit and lowpass filter as Tx part, bandpass filter as Rx part. Design of output matching circuit for LTCC was used matching parameter from output matching circuit based on lumped circuit on the PCB board. The dielectric constant of LTCC substrate is 9. The substrate was composed of total 26 layers with each 30um thickness. Ag paste was used for the internal pattern as the conductor material. The size of the module is $4.5mm{\times}3.2mm{\times}1.4mm$. The fabricated FEM showed the gain of 21dB, ACPR of less than -31dBc first side lobe and Less than -59dBc second side lobe and the output power of 23Bm at P1dB.

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A Study of a Method to Evaluate the Corrosion Resistance of Al2O3 Coated Vacuum Components for Semiconductor Equipment (반도체 장비용 Al2O3 코팅 진공부품의 내부식성 평가 연구)

  • You, S.M.;Yun, J.Y.;Kang, S.W.;Shin, J.S.;Seong, D.J.;Shin, Y.H.
    • Journal of the Korean Vacuum Society
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    • v.17 no.3
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    • pp.175-182
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    • 2008
  • This study is concerned with the evaluation of the corrosion resistance of coated semiconductor equipment parts with various processes. To select the appropriate basis for evaluation, replacement parts were observed during the semiconductor manufacturing process. This study also ran a dry corrosion test using $Al_2O_3$, which is mostly used as a coating material. This test quantitatively measured the efficiency of coated parts. Surface morphology, leakage current and breakdown voltage were also evaluated. This study showed that a dry corrosion process led to the drop of electrical properties, for example, the leakage current increase and the dielectric strength decrease. The surface morphology test displayed that surface damage is largely dependent on the exposure time to corrosive environments. By using the values that changed during the corrosion process, it may be possible to contrive a method to evaluate the efficiency of coated parts with various processes.

Effects of Particle Size on Properties of PZT -Based Thick Films (입자 크기가 PZT계 압전 후막의 물성에 미치는 영향)

  • 김동명;김정석;천채일
    • Journal of the Korean Ceramic Society
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    • v.41 no.5
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    • pp.375-380
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    • 2004
  • Pb(Ni$\_$1/3/Nb$\_$2/3/)O$_3$-PbZrO$_3$-PbTiO$_3$ thick films were screen-printed on platinized alumina substrates and fired at 800-1000$^{\circ}C$. Two kinds of powders with different particle size were prepared by attrition and ball milling methods. Effects of particle size of starting material on the microstructure and electrical properties of the thick films were investigated. Average particle size of attrition milled-powder (0.44 ${\mu}$m) was much smaller than that of ball milled-powder (2.87 ${\mu}$m). Average grain size of the thick film prepared from attrition-milled powder was smaller than that of the thick film prepared from ball-milled powder at the sintering temperature of 800$^{\circ}C$. However, the difference in average particle size became smaller with increasing the sintering temperature. Thick films prepared from attrition-milled powders showed more uniform and denser microstructures at all firing temperatures. Thick films prepared from attrition-milled powders had better electrical properties at the firing temperature above 900$^{\circ}C$ than thick films prepared from ball-milled powders. Dielectric constant, remanent polarization and coercive field of the thick film prepared from attrition-milled powders and fired at 900$^{\circ}C$ were 559, 16.3 ${\mu}$C/cm$^2$, and 51.3 kV/cm, respectively.

A Compact Two-Wire Helical Antenna with an Open Stub for a T-DMB Antenna of Mobile Devices (단말기 T-DMB용 안테나로 사용될 수 있는 Open Stub를 가지는 소형 Two-Wire Helical 안테나)

  • Lee, Dong-Hyun;Park, Se-Hyun;Kim, Young-Eil;Park, Wee-Sang
    • The Journal of Korean Institute of Electromagnetic Engineering and Science
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    • v.18 no.2
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    • pp.151-157
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    • 2007
  • We have presented a compact two-wire helical antenna adopted an open stub in opposite to a feeding point, which is for a T-DMB antenna of mobile devices. By adjusting the length of the open stub or pasting a dielectric material on the open stub, the input impedance around 200 MHz, bands of the T-DMB, can be easily control, even though the total height of the antenna is less than 8 cm(0.053 $\lambda$ at 200 MHz). The operating mechanism of the antenna is explained by using equivalent circuits of two modes, an unbalanced mode and a balanced mode. Based on the analysis of the equivalent circuits, the effects of using the open stub are validated. Several proposed antennas have been fabricated and measured. One of the fabricated antennas has -10 dB impedance bandwidth of $196{\sim}204$ MHz(8 MHz) whose value covers one channel of the T-DMB(6 MHz). The measured $S_{21}$ of the antenna is -38.6 dB which is about 17 dB higher than that of a monopole antenna whose height is same with the proposed antenna.

Plasmonic Enhanced Light Absorption by Silver Nanoparticles Formed on Both Front and Rear Surface of Polycrystalline Silicon Thin Film Solar Cells

  • Park, Jongsung;Park, Nochang;Varlamov, Sergey
    • Proceedings of the Korean Vacuum Society Conference
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    • pp.493-493
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    • 2014
  • The manufacturing cost of thin-film photovoltics can potentially be lowered by minimizing the amount of a semiconductor material used to fabricate devices. Thin-film solar cells are typically only a few micrometers thick, whereas crystalline silicon (c-Si) wafer solar cells are $180{\sim}300\mu}m$ thick. As such, thin-film layers do not fully absorb incident light and their energy conversion efficiency is lower compared with that of c-Si wafer solar cells. Therefore, effective light trapping is required to realize commercially viable thin-film cells, particularly for indirect-band-gap semiconductors such as c-Si. An emerging method for light trapping in thin film solar cells is the use of metallic nanostructures that support surface plasmons. Plasmon-enhanced light absorption is shown to increase the cell photocurrent in many types of solar cells, specifically, in c-Si thin-film solar cells and in poly-Si thin film solar cell. By proper engineering of these structures, light can be concentrated and coupled into a thin semiconductor layer to increase light absorption. In many cases, silver (Ag) nanoparticles (NP) are formed either on the front surface or on the rear surface on the cells. In case of poly-Si thin film solar cells, Ag NPs are formed on the rear surface of the cells due to longer wavelengths are not perfectly absorbed in the active layer on the first path. In our cells, shorter wavelengths typically 300~500 nm are also not effectively absorbed. For this reason, a new concept of plasmonic nanostructure which is NPs formed both the front - and the rear - surface is worth testing. In this simulation Al NPs were located onto glass because Al has much lower parasitic absorption than other metal NPs. In case of Ag NP, it features parasitic absorption in the optical frequency range. On the other hand, Al NP, which is non-resonant metal NP, is characterized with a higher density of conduction electrons, resulting in highly negative dielectric permittivity. It makes them more suitable for the forward scattering configuration. In addition to this, Ag NP is located on the rear surface of the cell. Ag NPs showed good performance enhancement when they are located on the rear surface of our cells. In this simulation, Al NPs are located on glass and Ag NP is located on the rear Si surface. The structure for the simulation is shown in figure 1. Figure 2 shows FDTD-simulated absorption graphs of the proposed and reference structures. In the simulation, the front of the cell has Al NPs with 70 nm radius and 12.5% coverage; and the rear of the cell has Ag NPs with 157 nm in radius and 41.5% coverage. Such a structure shows better light absorption in 300~550 nm than that of the reference cell without any NPs and the structure with Ag NP on rear only. Therefore, it can be expected that enhanced light absorption of the structure with Al NP on front at 300~550 nm can contribute to the photocurrent enhancement.

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Performance Evaluation of a Fiber-Optic Cerenkov Radiation Sensor System Using a Simulated Spent Fuel Assembly (사용후핵연료 집합체 모사장치를 이용한 광섬유 체렌코프 방사선 센서 시스템의 성능평가)

  • Shin, Sang Hun;Yoo, Wook Jae;Jang, Kyoung Won;Cho, Seunghyun;Park, Byung Gi;Lee, Bongsoo
    • Journal of Sensor Science and Technology
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    • v.23 no.4
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    • pp.245-250
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    • 2014
  • When the charged particle travels in transparent medium with a velocity greater than that of light in the same medium, the electromagnetic field close to the particle polarizes the medium along its path, and then the electrons in the atoms follow the waveform of the pulse which is called as Cerenkov light or radiation. This type of radiation can be easily observed in a spent fuel storage pit. In optical fibers, the Cerenkov light also can be generated due to their dielectric components. Accordingly, the radiation-induced light signals can be obtained using optical fibers without any scintillating material. In this study, to measure the intensities of Cerenkov radiation induced by gamma-rays, we have fabricated the fiber-optic Cerenkov radiation sensor system using silica optical fibers, plastic optical fibers, multi-anode photomultiplier tubes, simulated spent fuel assembly and a scanning system. To characterize the Cerenkov radiation generated in optical fibers, the intensities of Cerenkov radiation generated in the silica and plastic optical fibers were measured. Also, we measured the longitudinal distribution of gamma rays emitted from the Ir-192 isotope by using the fiber-optic Cerenkov radiation sensor system and simulated spent fuel assembly.

In Situ Monitoring of the MBE Growth of AlSb by Spectroscopic Ellipsometry

  • Kim, Jun-Yeong;Yun, Jae-Jin;Lee, Eun-Hye;Bae, Min-Hwan;Song, Jin-Dong;Kim, Yeong-Dong
    • Proceedings of the Korean Vacuum Society Conference
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    • pp.342-343
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    • 2013
  • AlSb is a promising material for optical devices, particularly for high-frequency and nonlinear-optical applications. And AlSb offers significant potential for devices such as quantum-well lasers, laser diodes, and heterojunction bipolar transistors. In this work we study molecular beam epitaxy (MBE) growth of an unstrained AISb film on a GaAs substrate and identify the real-time monitoring capabilities of in situ spectroscopic ellipsometry (SE). The samples were fabricated on semi-insulating (0 0 1) GaAs substrates using MBE system. A rotating sample stage ensured uniform film growth. The substrate was first heated to $620^{\circ}C$ under As2 to remove surface oxides. A GaAs buffer layer approximately 200 nm- thick was then grown at $580^{\circ}C$. During the temperature changing process from $580^{\circ}C$ to $530^{\circ}C$, As2 flux is maintained with the shutter for Ga being closed and the reflection high-energy electron diffraction (RHEED) pattern remaining at ($2{\times}4$). Upon reaching the preset temperature of $530^{\circ}C$, As shutter was promptly closed with Sb shutter open, resulting in the change of RHEED pattern from ($2{\times}4$) to ($1{\times}3$). This was followed by the growth of AlSb while using a rotating-compensator SE with a charge-coupled-device (CCD) detector to obtain real-time SE spectra from 0.74 to 6.48 eV. Fig. 1 shows the real time measured SE spectra of AlSb on GaAs in growth process. In the Fig. 1 (a), a change of ellipsometric parameter ${\Delta}$ is observed. The ${\Delta}$ is the parameter which contains thickness information of the sample, and it changes in a periodic from 0 to 180o with growth. The significant change of ${\Delta}$ at~0.4 min means that the growth of AlSb on GaAs has been started. Fig. 1b shows the changes of dielectric function with time over the range 0.74~6.48 eV. These changes mean phase transition from pseudodielectric function of GaAs to AlSb at~0.44 min. Fig. 2 shows the observed RHEED patterns in the growth process. The observed RHEED pattern of GaAs is ($2{\times}4$), and the pattern changes into ($1{\times}3$) with starting the growth of AlSb. This means that the RHEED pattern is in agreement with the result of SE measurements. These data show the importance and sensitivity of SE for real-time monitoring for materials growth by MBE. We performed the real-time monitoring of AlSb growth by using SE measurements, and it is good agreement with the results of RHEED pattern. This fact proves the importance and the sensitivity of SE technique for the real-time monitoring of film growth by using ellipsometry. We believe that these results will be useful in a number of contexts including more accurate optical properties for high speed device engineering.

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Analysis of Parameter Characteristic of Parallel Electrodes Conduction-cooled Film Capacitor for HF-LC Resonance (고주파 LC 공진을 위한 병렬전극 전도냉각 필름커패시터의 파라메타 특성 분석)

  • Won, Seo-Yeon;Lee, Kyeong-Jin;Kim, Hie-Sik
    • Journal of the Institute of Electronics and Information Engineers
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    • v.53 no.6
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    • pp.155-166
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    • 2016
  • It is important to configure capacitance(C) of the capacitor and the induction coefficient(L) of the work coil on the resonant circuit design stage in order to induce heating on the object by a precise and constant frequency components in the electromagnetic induction heating equipment. Work coil conducts a direct induction heating according to heating point and area of the object which has a fixed heat factor so that work coil is designed to has fixed value. On the other hands, Capacitor should be designed to be changed in order to be the higher the utilization of the entire equipment. It is extracted the samples by variation of single electrode capacity from the selection stage of raw materials for capacity to the stage of process design for output of the high frequency LC resonance of 700kHz on 1000 VAC maximum voltage and current to $200I_{MAX}$. It is suggested fundamental experiment results in order to prove relation for the optimal design of HF-LC resonance conduction-cooled capacitor based on the response of frequency characteristics and results of output parameters according to variation of the capacitance size.

The Effect of Strong Acid and Ionic Material Addition in the Microwave-assisted Solubilization of Waste Activated Sludge (Microwave를 이용한 폐활성슬러지의 가용화 반응에서 강산과 이온성 물질의 첨가가 미치는 영향)

  • Lee, Jeongmin;Lee, Jaeho;Lim, Jisung;Kim, Youngwoo;Byun, Imgyu;Park, Taejoo
    • Journal of Korean Society of Environmental Engineers
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    • v.37 no.1
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    • pp.60-68
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    • 2015
  • The study of waste activated sludge (WAS) solubilization has been increased for sludge volume reduction and enhancing the efficiency of anaerobic digestion. Microwave (MW)-assisted solubilization is an effective method for the solubilization of WAS because this method can lead to thermal, nonthermal effect and ionic conduction by dielectric heating. In this study, the solubilization of WAS by MW heating and conductive heating (CH) was compared and to enhance the MW-assisted solubilization of WAS at low MW output power, chemical agents were applied such as $H_2SO_4$ as the strong acid and $CaCl_2$, NaCl as the ionic materials. Compared to the COD solubilization of WAS by CH, that by MW heating was approximately 1.4, 6.2 times higher at $50^{\circ}C$, $100^{\circ}C$, respectively and the highest COD solubilization of WAS was 10.0% in this study of low MW output power condition. At the same MW output power and reaction time in chemically agents assisted experiments, the COD solubilization of WAS were increased up to 18.1% and 12.7% with the addition of $H_2SO_4$ and NaCl, however, that with the addition of $CaCl_2$ was 10.7%. This result might be due to the fact that the precipitation reaction occurred by calcium ion ($Ca^{2+}$) and phosphate ion (${PO_4}^{3-}$) produced in WAS after MW-assisted solubilization. In this study, $H_2SO_4$ turned out to be the optimal agent for the enhancement of MW efficiency, the addition of 0.2 M $H_2SO_4$ was the most effective condition for MW-assisted WAS solubilization.