• 제목, 요약, 키워드: Dry etching

검색결과 395건 처리시간 0.037초

Dry Etching Behaviors of ZnO and $Al_2O_3$ Films in the Fabrication of Transparent Oxide TFT for AMOLED Display Application

  • Yoon, S.M.;Hwang, C.S.;Park, S.H.;Chu, H.Y.;Cho, K.I.
    • 한국정보디스플레이학회:학술대회논문집
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    • pp.1273-1276
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    • 2007
  • We provide a newly developed dry etching process for the fabrication of ZnO-based oxide TFTs. The etching characteristics of ZnO (active layer) and $Al_2O_3$ (gate insulator) thin films were systematically investigated when the etching gas mixtures and their mixing ratios were varied in the heliconplasma etching system.

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Dry Etching에 의해 제작된 실리콘 미세 구조물 (Silicon microstructure prepared by a dry etching)

  • 홍석민;임창덕;조정희;안일신;김옥경
    • 한국진공학회지
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    • v.6 no.3
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    • pp.242-248
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    • 1997
  • 기존의 다공질 실리콘 제작 방법인 chemical etching 방법을 병행하면서 새로운 제 작 방법으로서 dry etching 기술을 적용하여 다공질 실리콘을 제작하였다. 또한, 비교를 위 해 E-beam lithography 기술로 실리콘 구조물을 제작하였는데 이 경우 기술상 문제로 약 0.3$\mu\textrm{m}$의 직경을 가진 구조물이 최소의 크기였다. 따라서 새로운 방법으로 4인치 wafer위에 mask 역할을 해주는 다이아몬드 분말을 spin coater로 입힌 후 Reactive Ion Etching(RIE) 방법으로 미세구조의 다공질 실리콘을 제작하였다. 다양한 조건으로 제작된 sample들의 morphology를 SEM과 AFM 등을 이용하여 분석하였고 이 morphology에 대응하는 PL스펙 트럼을 측정하였다. 그 결과, 다이아몬드 분말을 이용한 dry etching방법으로 제작된 다공질 실리콘의 PL peak의 위치가 chemical etching 방법의 다공질 실리콘의 PL peak 위치인 760nm에 비해 높은 에너지인 590nm로 나타났다.

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새로운 ICP 장치를 이용한 고온 초전도체의 Dry Etching과 기존의 Wet Etching 기술과의 비교 (Comparison of the Existing Wet Etching and the Dry Etching with the ICP Process Method)

  • 강형곤;임성훈;임연호;한윤봉;황종선;한병성
    • 한국전기전자재료학회논문지
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    • v.14 no.2
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    • pp.158-162
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    • 2001
  • In this report, a new process for patterning of YBaCuO thin films, ICP(inductively coupled plasma) method, is described by comparing with existing wet etching method. Two 100㎛ wide and 2mm long YBaCuO striplines on LaAlO$_3$ substrates have been fabricated using two patterning techniques. And the properties were compared with the critical temperature and the SEM photography. Then, the critical temperatures of two samples were about 88 K, but the cross section of sample using ICP method was shaper than that using the wet etching method. ICP method can be used as a good etching technique process for patterning of YBaCuO superconductor.

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The durability of LCD glass substrate in dry etching

  • Yanase, Tomoki;Miwa, Shinkichi;Yamazaki, Hiroki
    • 한국정보디스플레이학회:학술대회논문집
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    • pp.857-859
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    • 2007
  • Durability of LCD glass, OA-10 and OA-21, to $SiCl_4$ and $SF_6$ gases was investigated. Reaction products are generated on the glass surface. The reaction products are reduced by changing the etching conditions. the durability of OA-10 and OA-21 to the dry etching gases is comparable.

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The Influence of Dry Etching Process by Charged Static Electricity on LCD Glass

  • Kim, Song-Kwan;Yun, Hae-Sang;Hong, Mun-Pyo;Park, Sun-Woo
    • 한국정보디스플레이학회:학술대회논문집
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    • pp.77-78
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    • 2000
  • We verified the charged static electricity on LCD glass influences upon the etching uniformity of dry etching process by plasma. In the TFT-LCD manufacturing process, we mainly paid attention to eliminate the static electricity for TFT reliability. The static electricity caused the serious ununiformity of etching surface profile and etching rate in the dry etch process. Through our experiment on the made static electricity from -200V to -1000V, it was confirmed that the static electricity on LCD glass caused the etching rate variation of $1.5%{\sim}15%$. We recommend the etching process equipment for LCD manufacturing have to establish the soft X-ray exposure module system for eliminating the static electricity inside the loading and unloading chamber.

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건식식각 기술 이용한 실리콘 압력센서의 특성 (Characteristics silicon pressure sensor using dry etching technology)

  • 우동균;이경일;김흥락;서호철;이영태
    • 센서학회지
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    • v.19 no.2
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    • pp.137-141
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    • 2010
  • In this paper, we fabricated silicon piezoresistive pressure sensor with dry etching technology which used Deep-RIE and etching delay technology which used SOI(silicon-on-insulator) wafer. We improved pressure sensor offset and its temperature dependence by removing oxidation layer of SOI wafer which was used for dry etching delay layer. Sensitivity of the fabricated pressure sensor was about 0.56 mV/V${\cdot}$kPa at 10 kPa full-scale, and nonlinearity of the fabricated pressure sensor was less than 2 %F.S. The zero off-set change rate was less than 0.6 %F.S.

A Comparative Study of a Dielectric-Defined Process on AlGaAs/InGaAs/GaAs PHEMTs

  • Lim, Jong-Won;Ahn, Ho-Kyun;Ji, Hong-Gu;Chang, Woo-Jin;Mun, Jae-Kyoung;Kim, Hae-Cheon;Cho, Kyoung-Ik
    • ETRI Journal
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    • v.27 no.3
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    • pp.304-311
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    • 2005
  • We report on the fabrication of an AlGaAs/InGaAs/GaAs pseudomorphic high electron mobility transistor (PHEMT) using a dielectric-defined process. This process was utilized to fabricate $0.12\;{\mu}m\;{\times}\;100 {\mu}m$ T-gate PHEMTs. A two-step etch process was performed to define the gate footprint in the $SiN_x$. The $SiN_x$ was etched either by dry etching alone or using a combination of wet and dry etching. The gate recessing was done in three steps: a wet etching for removal of the damaged surface layer, a dry etching for the narrow recess, and wet etching. A structure for the top of the T-gate consisting of a wide head part and a narrow lower layer part has been employed, taking advantage of the large cross-sectional area of the gate and its mechanically stable structure. From s-parameter data of up to 50 GHz, an extrapolated cut-off frequency of as high as 104 GHz was obtained. When comparing sample C (combination of wet and dry etching for the $SiN_x$) with sample A (dry etching for the $SiN_x$), we observed an 62.5% increase of the cut-off frequency. This is believed to be due to considerable decreases of the gate-source and gate-drain capacitances. This improvement in RF performance can be understood in terms of the decrease in parasitic capacitances, which is due to the use of the dielectric and the gate recess etching method.

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플라즈마 처리에 의한 마스크 특성 변화 (The Characteristic Variation of Mask with Plasma Treatment)

  • 김좌연;최상수;강병선;민동수;안영진
    • 한국전기전자재료학회논문지
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    • v.21 no.2
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    • pp.111-117
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    • 2008
  • We have studied surface roughness, contamination of impurity, bonding with some gas element, reflectance and zeta potential on masks to be generated or changed during photolithography/dry or wet etching process. Mask surface roughness was not changed after photolithography/dry etching process. But surface roughness was changed on some area under MoSi film of Cr/MoSi/Qz. There was not detected any impurity on mask surface after plasma dry etching process. Reflectance of mask was increased after variable plasma etching treatment, especially when mask was treated with plasma including $O_2$ gas. Blank mask was positively charged when the mask was treated with Cr plasma etching gas($Cl_2:250$ sccm/He:20 $sccm/O_2:29$ seem, source power:100 W/bias power:20 W, 300 sec). But this positive charge was changed to negative charge when the mask was treated with $CF_4$ gas for MoSi plasma etching, resulting better wet cleaning. There was appeared with negative charge on MoSi/Qz mask treated with Cr plasma etching process condition, and this mask was measured with more negative after SC-1 wet cleaning process, resulting better wet cleaning. This mask was charged with positive after treatment with $O_2$ plasma again, resulting bad wet cleaning condition.

ICP-RIE를 이용한 저압용 실리콘 압력센서 제작 (Fabrication of a silicon pressure sensor for measuring low pressure using ICP-RIE)

  • 이영태
    • 센서학회지
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    • v.16 no.2
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    • pp.126-131
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    • 2007
  • In this paper, we fabricated piezoresistive pressure sensor with dry etching technology which used ICP-RIE (inductively coupled plasma reactive ion etching) and etching delay technology which used SOI (silicon-on-insulator). Structure of the fabricated pressure sensor shows a square diaphragm connected to a frame which was vertically fabricated by dry etching process and a single-element four-terminal gauge arranged at diaphragm edge. Sensitivity of the fabricated sensor was about 3.5 mV/V kPa at 1 kPa full-scale. Measurable resolution of the sensor was not exceeding 20 Pa. The nonlinearity of the fabricated pressure sensor was less than 0.5 %F.S.O. at 1 kPa full-scale.

ICP Poly Etcher를 이용한 Poly-Si Dry Etch시 Gas Flow에 따른 Etching 특성 변화 연구 (Study of Characteristics Variation of Etching according to Gas Flow in Poly-Si Dry Etching using ICP Poly Etcher)

  • 김동일;한승수
    • 한국표면공학회:학술대회논문집
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    • pp.180-181
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    • 2015
  • 본 논문에서는 ICP Poly Etcher를 이용한 Dry Etch에서 몇가지 공정조건의 변화에 따른 Etching 특성 변화를 연구하였다. 주요 가스유량들이 증가 할 때, Poly-Si 의 Etch rate는 증가 하였으며 Uniformity는 나빠진 것을 확인 할 수 있었고 다른 특성들은 특별한 변화를 보이지 않았다. 주요 Gas인 HBr의 증가는 PR(Photo Resist)와 Uniformity에 영향을 주었다. 이 논문을 통해 HBr의 유량이 Poly-Si Etching에 영향을 주는 결과를 알아 볼 수 있었고 HBr 가스의 유량 증가가 Polymer의 생성에 영향을 줘 Selectivity와 Uniformity를 증가 시킨다는 것도 확인 해 볼 수 있었다.

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