• Title, Summary, Keyword: Film capacitor

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The Design and Reliability Evaluation of Metallized Film Capacitor for Power Electronic Applications (전력전자용 금속증착 필름 커패시터 설계 및 신뢰성 평가)

  • Yoon, Jung-Rag;Kim, Young-Kwang;Lee, Serk-Won;Lee, Heun-Young
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.24 no.5
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    • pp.381-386
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    • 2011
  • This paper presents the design and reliability evaluation of metallized film capacitor for power e lectronics application. The rated voltage of development capacitor is DC 3300[V], the capacitance is 5 ${\mu}F$ and the ripple current capability is 130 $A_{rms}$. Film metallization and patterns are an important design factor that has been development enhance the electric and reliability properties of film capacitor for power electronics. In term of capacitor construction and metallized pattern is one of the parameters that can be modified to further improve the rating in the terms of maximum ripple current and lifetime. This capacitor can be used as snubber capacitor application such as power train invertor system.

Electrical Properties of Laser CVD Silicon Nitride Film (Laser CVD SiN막의 전기적 특성)

  • Kim, Yong-Woo;Kim, Sang-Wook;Park, Jong-Wook;Kim, Chun-Sub;Sung, Yung-Kwon
    • Proceedings of the KIEE Conference
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    • pp.85-87
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    • 1990
  • Silicon nitride film was deposited on a silicon wafer using a laser CVD(LCVD) technique, which is based on direct photolysis of $SiH_4/NH_3$ gas mixture by ArF laser beam(${\lambda}=193\;nm$). The refractive index of deposited SiN film is 1.9 at the temperature of $300^{\circ}C$, pressure of 5 torr. The breakdown field strength of LCVD SiN film was 10MV/cm. In IR spectrum, the absorption peak of Si-H, N-H, and Si-N is detected and it is shown that hydrogen is included in SiN film. From analysis of absorption band. it is calculated that density of Si-H, N-H bond is higher than $5{\times}10^{22}cm^{-3}$. LCVD MIS capacitor and PECVD MIS capacitor have injection-type hysteresis but it is known that hysteresis loss of LCVD MIS capacitor is smaller than that of PECVD MIS capacitor. It means that Interface state density of LCVD capacitor is smaller than that of PECVD capacitor. In addition, the flatband voltage($V_{FB}$) of LCVD is smaller than that of PECVD capacitor. And it means that fixed charged density($Q_{FIX}$) of LCVD capacitor is smaller than that of PECVD MIS capacitor.

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Fabrication and Characteristics of LB Ultra-thin Film Capacitor (I) (LB 초박막 커패시터의 제작 및 특성 (I))

  • 최용성;신훈규;권영수
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • pp.277-280
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    • 1995
  • We had experiment using LB method that can fabricate molecular order ultra-thin film below 100${\AA}$. LB mettled has known as main technology of information society in 21C, because it is nut only free oriention and alignment of molecular but also ability of thickness control as molecular order. In this paper, the fabricated condition and physical properities of functional ultra-thin film of molecular order was investigated and highly efficient ultra-thin film capacitor was fabricated by using ultra-thin LB film for application as electronic device. Possibility of ultra-thin film capacitor was researched by analizing rind measuring electrical properties. Polyimide ultra-thin LB film capacitor was fabricated, ensured theoretically rind experimentally its possibility in range of 10Hz∼ 1MHz through its frequency characteristics.

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Fabrication and Characteristics of LB Ultra-thin Film Capacitor (II) (LB 초박막 커패시터의 제작 및 특성 (II))

  • 유승엽;박재철;권영수
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • pp.244-247
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    • 1996
  • We had experiment using LB method that can fabricate molecular order ultra-thin film below 100${\AA}$. LB method has known as main technology of information society in 21C, because it is not only free orientation and alignment of molecular but also ability of thickness control as molecular order. In this paper, the fabricated condition and physical properties of functional ultra-thin film of molecular order was investigated and highly efficient ultra-thin film capacitor was fabricated by using ultra-thin LB film for application as electronic device. Possibility of ultra-thin film capacitor was researched by analyzing and measuring electrical properties. Polyimide ultra-thin LB film capacitor was fabricated, ensured theoretically and experimentally its possibility in range of 10Hz∼lMHz through its frequency characteristics.

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Optimum Designing Film DC Link Capacitors for HEV/EV Applications (HEV/EV용 인버터의 입력 Film Capacitor 최적 설계 방법)

  • Shin, Seung-Min;Ryu, Seung-Hee;Lee, Byoung-Kuk;Park, Rae-Kwan
    • Proceedings of the KIPE Conference
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    • pp.53-54
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    • 2012
  • 본 논문에서는, 전기 자동차용 인버터의 DC Link에 사용되는 Film Capacitor의 최적 용량 선정 방법을 제시한다. 이를 위해 Film Capacitor의 동작 온도에 따른 기대수명, 전류 내량, 전압 내량 등을 고려하며, 실제 적용사례를 들어 검증한다.

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A High Tunable Capacitor Embedding Its Electrodes in Tunable Thin Film Dielectrics (가변형 박막 유전체에 전극을 임베디드 시킨 고가 변형 커패시터)

  • Lee Young-Chul;Hong Young-Pyo;Ko Kyung-Hyun
    • The Journal of Korean Institute of Electromagnetic Engineering and Science
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    • v.17 no.9
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    • pp.860-865
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    • 2006
  • In this paper, a novel tunable inter-digital capacitor using dielectric tunable $Bi_2O_3-ZnO-Nb_2O_5(BZN)$ pyrochlore thin films is proposed. In order to improve the tunability and reduce DC bias voltage using the fringing electric field, the electrodes of the inter-digital capacitor are embedded in the thin film. Designed results using a 2.5 D simulator show that the tunability of the proposed inter-digital capacitor improves by 10 %, compared to the conventional inter-digital capacitor. The proposed IDC, which is based on the simulation results, was fabricated, using the BZN thin film deposited by a reactive RF magnetron sputtering on the on the silicon substrate. The fabricated inter-digital capacitor shows the maximum tunability of 50 % at 5.8 GHz and 18 V DC applied.

A Study on the Characteristic Analysis of Implemented Baseband AIN MIM Capacitor for Wireless PANs & Mobile Communication (무선PAN 및 이동통신용 기저대역 AIN MIM Capacitor의 구현과 특성분석에 관한 연구)

  • Lee, Jong-Joo;Kim, Eung-Kwon;Cha, Jae-Sang;Kim, Jin-Young;Kim, Young-Sung
    • The Journal of The Korea Institute of Intelligent Transport Systems
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    • v.7 no.5
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    • pp.97-105
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    • 2008
  • The micro capacitors are passive elements necessary to electronic circuits and wireless portable PAN(personal area network) and Mobile Communications device modules in the baseband circuits in combination with another passive and active devices. As capacitance is proportionally increased with dielectric constant and electrode areas, in addition, inversely decreased the thickness of the dielectric material, thus thin film capacitors are generally seen as a preferable means to achieve high performance and thin film capacitors are used in a variety of functional circuit devices. In this paper, propose dielectric material as AIN(Aluminium nitride) to make micro thin film capacitor, and this capacitor has the MIM(metal-insulator-metal) structure. AIN thin films are widespread applied because they had more excellent properties such as chemical stability, high thermal conductivity, electrical isolation and so on. In addition, AIN films show low frequency response for baseband signal ranges, I-V and C-V electrical characterization of a thin film micro capacitor. The above experimental test and estimated results demonstrate that the thin film capacitor has sufficient and efficient functional performance to be the baseband range frequency of general electronics circuit and passive device applications.

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Analysis of Joule-heat Characteristics according to the DC-link Capacitor Film Geometrics (DC-link Capacitor필름 형상에 따른 Joule-heat특성 분석)

  • Jeon, Yong Won;Kim, Young Shin;Jeon, Euy Sik
    • Journal of the Semiconductor & Display Technology
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    • v.19 no.1
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    • pp.42-48
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    • 2020
  • As global warming accelerates, eco-friendly electric cars are being developed to reduce carbon dioxide emissions, and power conversion inverters are used to drive motors. Among inverter components, DC-link capacitor is heated by high current usage, which causes problems such as performance and life-saving of inverter. Although metal cases with good thermal performance have been used to solve this problem, it is difficult to apply them in practice due to insulation problems with other parts. In this paper, the Heat-Generation influence factor of DC-link capacitor is analyzed. Variables on heat-generation are set at 3 levels for film width, inductance, and film thickness. Box-Behnken to 13 tests using the design and minimal deviations, e.g. through the experiment three times by each level. The surface of the film k type by attaching the sensor current is measured temperature. Capacitance was set to a minimum level of 200 ㎌ and had a frequency of 16 kHz with Worst case, ambient temperature of 85℃ and a ripple current of 50 Ams was applied. The temperature at the measurement point was collected in the data logger after sampling at 1 minute intervals for 2 hours after saturation with the ambient temperature. This experiment confirmed that setup factors are correlated with heat-generation.

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The Electrical Properties of BaTiO$_3$Ceramics Thin Films by RF Sputtering Technique (RF Sputtering법에 의한 BaTiO$_3$세라믹스 박막의 전기적 특성)

  • 이문기;류기원;배선기;이영희
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • pp.289-292
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    • 1997
  • BaTiO$_3$thin film capacitor were prepared on Pt(100)/SiO$_2$/Si(100)wafer by RF sputtering technique. Dielectric and electrical characteristics of the thin film capacitor are investigated. The Dielectric constant and loss were about 683 and 5[%], respectively. We found that the leakage current of thin film capacitor is depend on RF power during deposition. Because of increase of activation energy, leakage current inclosed at high RF power and sheet resistivity of the films was decreased. Swithching voltage of thin film capacitor was 4.4[V]

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HFSS Simulation of High Frequency Characteristics with $BaTiO_3$ Thick Film Embedded Capacitor in Organic Substrate ($BaTiO_3$ Thick Film Embedded Capacitor 내장 유기기판에서 capacitor용량에 따른 고주파 특성 전산 모사)

  • Nah, Da-Un;Lee, Woong-Sun;Cho, Il-Whan;Chung, Qwan-Ho;Byun, Kwang-Yoo
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • pp.11-12
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    • 2008
  • 최근 LSI speed의 고속화에 따라, SSN (Simultaneous Switching Noise)이 매우 큰 문제가 되고 있다. 이에 PDN에 대한 많은 해결책들이 제시되고 있으나 가장 저비용 고효율을 지향할 수 있는 방법이 현재 사용되고 있는 유기기판에 Capacitor를 내장하여 로 사용하는 방법이다. Decoupling capacitor를 두께가 밟은 유기기판에 구현하기 위해서는 유전율이 큰 물질을 사용하는 것이 좋은데 본 연구에서는 $BaTiO_3$를 epoxy 에 혼합하여 10um 두께의 필름으로 제작한 후 유기기판 제조 공정에 사용하여 유기기판을 구현하였다. 이렇게 구현된 capacitor 내장 유기기판을 2 stub의 간단한 회로를 구현하여 유전율 등을 측정하였으며, 고주파 전산모사를 통하여 capacitor의 용량 변화에 따른 고주파 특성의 변화를 연구하였다.

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