• Title, Summary, Keyword: GaN

Search Result 2,270, Processing Time 0.045 seconds

Stimulated emission from optically pumped column-III nitride semiconductors at room temperature (III족 질화물 반도체의 실온 광여기 유도방출)

  • 김선태;문동찬
    • Electrical & Electronic Materials
    • /
    • v.8 no.3
    • /
    • pp.272-277
    • /
    • 1995
  • We report the properties of optically pumped stimulated emission at room temperature (RT) from column-III nitride semiconductors of GaN, AlGaN/GaN double heterostructure (DH) and AlGaN/GaInN DH which prepared on a sapphire substrate using an AIN buffer-layer by the nietalorganic vapor phase epitaxy (MOVPE) method. The peak wavelength of the stimulated emission at RT from AIGaN/GaN DH is 369nm and the threshold of excitation pumping power density (P$\_$th/) is about 84kW/cm$\^$2/, and they from AlGaN/GaInN DH are 402nm and 130kW/cm$\^$2/ at the pumping power density of 200kW/cm$\^$2/, respectively. The P$\_$th/ of AIGaN/GaN and AlGaN/GaInN DHs are lower than the single layers of GaN and GaInN due to optical confinement within the active layers of GaN and GaInN, respectively.

  • PDF

Relative Absorption Edges of GaN/InGaN/GaN Single Quantum Wells and InGaN/GaN Heterostructures by Metalorganic Chemical Vapor Deposition (유기금속화학기상증착법으로 성장된 GaN/InGaN/GaN 단양자 우물층과 InGaN/GaN 이종접합 구조의 광학적 특징)

  • Kim, Je-Won;Son, Chang-Sik;Jang, Yeong-Geun;Choe, In-Hun;Park, Yeong-Gyun;Kim, Yong-Tae;Ambacher, O.;Ctutzmann, M.
    • Korean Journal of Materials Research
    • /
    • v.9 no.1
    • /
    • pp.42-45
    • /
    • 1999
  • The room temperature optical transmission spectra of GaN /InGaN/GaN single quantum wells (SQW) and InGaN/GaN heterostructures grwon by low pressure metalorganic chemical vapor deposition have been measured. The dependence of the absorption edges of the GaN/InGaN/GaN SQW on the well width has been determined from the transmission spectra. The result shows that the absorption edge of GaN/InGaN/GaN SQW shifts towards lower energy as increasing the well width. The dependence of the absorption edges of the InGaN/GaN heterostructures on InN mole fraction has also been determined from the transmission spectra. The result is compared with calculated values obtained from Vegards's laws. Our result shows a good agreement with the calculated values.

  • PDF

Effect of Carrier Confinement and Optical Properties of Two-dimensional Electrons in Al0.3Ga0.7N/GaN and Al0.3Ga0.7N/GaN/Al0.15Ga0.85N/GaN Heterostructures (Al0.3Ga0.7N/GaN 및 Al0.3Ga0.7N/GaN/Al0.15Ga0.85N/GaN 이종접합 구조에서 운반자 구속 효과와 이차원 전자가스의 광학적 특성)

  • Kwack, H.S.;Lee, K.S.;Cho, H.E.;Lee, J.H.;Cho, Y.H.
    • Journal of the Korean Vacuum Society
    • /
    • v.17 no.4
    • /
    • pp.359-364
    • /
    • 2008
  • We have investigated optical and structural properties of $Al_{0.3}Ga_{0.7}N$/GaN and $Al_{0.3}Ga_{0.7}N/GaN/Al_{0.15}Ga_{0.85}N/GaN$ heterostructures (HSs) grown by metal-organic chemical vapor deposition, by means of Hall measurement, high-resolution X-ray diffraction, and temperature- and excitation power-dependent photoluminescence (PL) spectroscopy. A strong GaN band edge emission and its longitudinal optical phonon replicas were observed for all the samples. At 10 K, a 2DEG-related PL peak located at ${\sim}\;3.445\;eV$ was observed for $Al_{0.3}Ga_{0.7}N$/GaN HS, while two 2DEG peaks at ${\sim}\;3.42$ and ${\sim}\;3.445\;eV$ were observed for $Al_{0.3}Ga_{0.7}N/GaN/Al_{0.15}Ga_{0.85}N/GaN$ HS due to the additional $Al_{0.15}Ga_{0.85}N$ layers. Moreover, the emission intensity of the 2DEG peak was higher in $Al_{0.3}Ga_{0.7}N/GaN/Al_{0.15}Ga_{0.85}N/GaN$ HS than in $Al_{0.3}Ga_{0.7}N$/GaN HS probably due to an effective confinement of the photo-excited holes by the additional $Al_{0.15}Ga_{0.85}N$ layers. The 2DEG-related emission intensity decreased with increasing temperature and disappeared at temperatures above 150 K. To investigate the origin of the new 2DEG peaks, the energy-band structure for multiple AlGaN/GaN HSs were simulated and compared with the experimental data. As a result, the observed high- and low-energy peaks of 2DEG can be attributed to the spatially-separated 2DEG emissions formed at different AlGaN/GaN heterointerfaces.

TEM analysis of pits of GaN thin film grown on intermediate temperature (TEM을 이용한 저온성장된 GaN박막의 결함분석)

  • 손광석;김동규;조형균
    • Proceedings of the Materials Research Society of Korea Conference
    • /
    • /
    • pp.105-105
    • /
    • 2003
  • InGaN/GaN MQW 구조는 청색 및 녹색 범위의 밴드 갭을 가지는 반도체로 최근 LED 및 LD 제조 등에 이용되고 있다. InGaN/GaN MQW은 InGaN와 GaN의 최적 성장온도의 중간온도에서 실행된다. InGaN와 GaN는 최적 성장온도의 차이가 크므로 중간온도에서 성장 시에 많은 결함이 생긴다. 성장온도가 높으면 InN가 분해되고 낮을 경우에는 질소의 결핍이 일어난다. 최적성장온도의 선택이 매우 중요한 문제로 주목되었다. Si 도핑으로 중간온도 성장 시에 형성되는 결함을 감소시키고 광학적 특성을 향상시킨다고 보고되었다. 그러나, Si 도핑효과에 대한 구체적이고 체계적인 연구는 부족한 실정이다. MQWs 구조의 GaN 장벽층에 미치는 성장온도와 Si 도핑 효과를 이해하기 위해서는 고온에서 성잠시킨 GaN박막(HT-GaN) 위에 중간온도에서 성장된 GaN 에피층(IT-GaN)의 구조에 관한 연구가 선행되어야한다. 본 연구에서는 HT-GaN 위에 성장된 GaN 에피층에 미치는 성장 온도와 Si 도핑 효과에 관해 연구하였다.

  • PDF

Numerical Study of Enhanced Performance in InGaN Light-Emitting Diodes with Graded-composition AlGaInN Barriers

  • Kim, Su Jin;Kim, Tae Geun
    • Journal of the Optical Society of Korea
    • /
    • v.17 no.1
    • /
    • pp.16-21
    • /
    • 2013
  • In this paper, we report the effect of GaN/graded-composition AlGaInN/GaN quantum barriers in active regions on the electrical and optical properties of GaN-based vertical light emitting diodes (VLEDs). By modifying the aluminum composition profile within the AlGaInN quantum barrier, we have achieved improvements in the output power and the internal quantum efficiency (IQE) as compared to VLEDs using conventional GaN barriers. The forward voltages at 350 mA were calculated to be 3.5 and 4.0 V for VLEDs with GaN/graded-composition AlGaInN/GaN barriers and GaN barriers, respectively. The light-output power and IQE of VLEDs with GaN/graded-composition AlGaInN/GaN barriers were also increased by 4.3% and 9.51%, respectively, as compared to those with GaN barriers.

Dependence of Doping on Indium Content in InGaN/GaN Multiple Quantum Wells for Effective Water Splitting (다양한 In 조성을 가진 InGaN/GaN Multi Quantum Well의 효과적인 광전기화학적 물분해)

  • Bae, Hyojung;Bang, Seung Wan;Ju, Jin-Woo;Ha, Jun-Seok
    • Journal of the Microelectronics and Packaging Society
    • /
    • v.25 no.3
    • /
    • pp.1-5
    • /
    • 2018
  • In this study, the effects of indium (In) doping in InGaN/GaN multi quantum well (MQW) on photoelectrochemical (PEC) properties were investigated. Each quantum well (QW) layer with controlled In content were grown on sapphire substrate. Before growth of MQW, GaN growth consisted of various stages in the following order: buffer GaN growth, undoped GaN growth, and Si-doped n-type GaN growth. Absorbance of InGaN/GaN MQW having different In composition was higher than that of the InGaN/GaN MQW having a constant In composition. It indicates that InGaN layer having different In composition absorbs light having a broad spectrum energy. These results are in agreement with those in photoluminescence (PL). After evaluation of PEC properties, it demonstrated that InGaN/GaN MQW having different In composition was improved InGaN/GaN MQW having constant In composition in PEC water splitting ability.

?Growth and Characterization of InGaN/GaN MQWs on Two Different Types of Substrate

  • Kim, Taek-Sung;Park, Jae-Young;Cuong, Tran Viet;Hong, Chang-Hee
    • JSTS:Journal of Semiconductor Technology and Science
    • /
    • v.6 no.2
    • /
    • pp.90-94
    • /
    • 2006
  • We report on the growth and characterization of InGaN/GaN MQWs on two different types of sapphire substrates and GaN substrates. The InGaN/GaN MQWs are grown by using metalorganic chemical vapor deposition. Our analysis of the satellite peaks in the HRXRD patterns shows, GaN substrates InGaN/GaN MQW compared to sapphire substrates InGaN/GaN MQW, more compressive strain on GaN substrates than on sapphire substrates. However, results of optical investigation of InGaN/GaN MQWs grown on GaN substrates and on sapphire substrates, which have lower Stokes-like shift of PL to GaN substrates compared to sapphire substrates, are shown to the potential fluctuation and the quantum-confined Stark effect induced by the built-in internal field due to spontaneous and straininduced piezoelectric polarizations. The InGaN/GaN MQWs are shown to quantify the Stokes-like shift as a function of x.

Luminescence properties of InGaN/GaN green light-emitting diodes grown by using graded short-period superlattice structures

  • Cho, Il-Wook;Na, Hyeon Ji;Ryu, Mee-Yi;Kim, Jin Soo
    • Proceedings of the Korean Vacuum Society Conference
    • /
    • /
    • pp.279.2-279.2
    • /
    • 2016
  • InGaN/GaN multiple quantum wells (MQWs) have been attracted much attention as light-emitting diodes (LEDs) in the visible and UV regions. Particularly, quantum efficiency of green LEDs is decreased dramatically as approaching to the green wavelength (~500 nm). This low efficiency has been explained by quantum confined Stark effect (QCSE) induced by piezoelectric field caused from a large lattice mismatch between InGaN and GaN. To improve the quantum efficiency of green LED, several ways including epitaxial lateral overgrowth that reduces differences of lattice constant between GaN and sapphire substrates, and non-polar method that uses non- or semi-polar substrates to reduce QCSE were proposed. In this study, graded short-period InGaN/GaN superlattice (GSL) was grown below the 5-period InGaN/GaN MQWs. InGaN/GaN MQWs were grown on the patterned sapphire substrates by vertical-metal-organic chemical-vapor deposition system. Five-period InGaN/GaN MQWs without GSL structure (C-LED) were also grown to compare with an InGaN/GaN GSL sample. The luminescence properties of green InGaN/GaN LEDs have been investigated by using photoluminescence (PL) and time-resolved PL (TRPL) measurements. The PL intensities of the GSL sample measured at 10 and 300 K increase about 1.2 and 2 times, respectively, compared to those of the C-LED sample. Furthermore, the PL decay of the GSL sample measured at 10 and 300 K becomes faster and slower than that of the C-LED sample, respectively. By inserting the GSL structures, the difference of lattice constant between GaN and sapphire substrates is reduced, resulting that the overlap between electron and hole wave functions is increased due to the reduced piezoelectric field and the reduction in dislocation density. As a results, the GSL sample exhibits the increased PL intensity and faster PL decay compared with those for the C-LED sample. These PL and TRPL results indicate that the green emission of InGaN/GaN LEDs can be improved by inserting the GSL structures.

  • PDF

Effect of electron-beam irradiation on leakage current of AlGaN/GaN HEMTs on sapphire

  • Oh, Seung Kyu;Song, Chi Gyun;Jang, Taehoon;Kwak, Joon Seop
    • JSTS:Journal of Semiconductor Technology and Science
    • /
    • v.13 no.6
    • /
    • pp.617-621
    • /
    • 2013
  • This study examined the effect of electron-beam (E-beam) irradiation on the electrical properties of n-GaN, AlGaN and AlGN/GaN structures on sapphire substrates. E-beam irradiation resulted in a significant decrease in the gate leakage current of the n-GaN, AlGaN and HEMT structure from $4.0{\times}10^{-4}A$, $6.5{\times}10^{-5}A$, $2.7{\times}10^{-8}A$ to $7.7{\times}10^{-5}A$, $7.7{\times}10^{-6}A$, $4.7{\times}10^{-9}A$, respectively, at a drain voltage of -10V. Furthermore, we also investigated the effect of E-beam irradiation on the AlGaN surface in AlGaN/GaN heterostructure high electron mobility transistors(HEMTs). The results showed that the maximum drain current density of the AlGaN/GaN HEMTs with E-beam irradiation was greatly improved, when compared to that of the AlGaN/GaN HEMTs without E-beam irradiation. These results strongly suggest that E-beam irradiation is a promising method to reduce leakage current of AlGaN/GaN HEMTs on sapphire through the neutralization the trap.

Growth of Blue Light Emitting InGaN/GaN MQWs by Metalorganic Chemical Vapor Deposition (유기금속화학기상증착법을 이용한 청색 발광 InGaN/GaN MQWs의 성장에 관한 연구)

  • Kim, Dong-Joon;Moon, Yong-Tae;Song, Keun-Man;Park, Seong-Ju
    • Journal of the Institute of Electronics Engineers of Korea SD
    • /
    • v.37 no.12
    • /
    • pp.11-17
    • /
    • 2000
  • We investigated the growth of InGaN/GaN multiple quantum wells (MQWs) structures which emit blue light. The samples were grown in a low pressure metalorganic chemical vapor deposition system. We examined InGaN/GaN MQWs by varying growth temperatures and thicknesses of InGaN well and GaN barrier layers in MQWs. Especially, the thickness of GaN barrier in InGaN/GaN MQWs was found to severely affect the interfacial abruptness between InGaN well and GaN barrier layers. The higher order satellite peaks in the high resolution x-ray diffraction spectra and the high resolution cross sectional transmission electron microscope image of MQW structrues revealed that the interface between InGaN and GaN layers was very abrupt. Room-temperature photoluminescence spectra also showed a blue emission from InGaN/GaN MQWs at the wavelength of 463.5nm with a narrow full width at half maximum of 72.6meV.

  • PDF