• Title, Summary, Keyword: High purity semi-insulating

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Electrical Characteristics of SiC Lateral P-i-N Diodes Fabricated on SiC Semi-Insulating Substrate

  • Kim, Hyoung Woo;Seok, Ogyun;Moon, Jeong Hyun;Bahng, Wook;Jo, Jungyol
    • Journal of Electrical Engineering and Technology
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    • v.13 no.1
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    • pp.387-392
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    • 2018
  • Static characteristics of SiC (silicon carbide) lateral p-i-n diodes implemented on semi-insulating substrate without an epitaxial layer are inVestigated. On-axis SiC HPSI (high purity semi-insulating) and VDSI (Vanadium doped semi-insulating) substrates are used to fabricate the lateral p-i-n diode. The space between anode and cathode ($L_{AC}$) is Varied from 5 to $20{\mu}m$ to inVestigate the effect of intrinsic-region length on static characteristics. Maximum breakdown Voltages of HPSI and VDSI are 1117 and 841 V at $L_{AC}=20{\mu}m$, respectiVely. Due to the doped Vanadium ions in VDSI substrate, diffusion length of carriers in the VDSI substrate is less than that of the HPSI substrate. A forward Voltage drop of the diode implemented on VDSI substrate is 12 V at the forward current of $1{\mu}A$, which is higher than 2.5 V of the diode implemented on HPSI substrate.

Semi-Insulating SiC Single Crystals Grown with Purity Levels in SiC Source Materials (고순도 SiC 파우더를 이용한 반절연 SiC 단결정 성장)

  • Lee, Chae Young;Choi, Jeong Min;Kim, Dae Sung;Park, Mi Seon;Jang, Yeon Suk;Lee, Won Jae;Yang, In Seok;Kim, Tae Hee;Chen, Xiufang;Xu, Xiangang
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.32 no.2
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    • pp.100-103
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    • 2019
  • The change in vanadium amount according to the growth direction of vanadium-doped semi-insulated (SI) SiC single crystals using high-purity SiC powder was investigated. High-purity SiC powder and a porous graphite (PG) inner crucible were placed on opposite sides of SiC seed crystals. SI SiC crystals were grown on 2 inch 6H-SiC Si-face seeds at a temperature of $2,300^{\circ}C$ and growth pressure of 10~30 mbar of argon atmosphere, using the physical vapor transport (PVT) method. The sliced SiC single crystals were polished using diamond slurry. We analyzed the polytype and quality of the SiC crystals using high-resolution X-ray diffraction (XRD) and Raman spectroscopy. The resistivity of the SI SiC crystals was analyzed using contactless resistivity mapping (COREMA) measurements.