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The Silylation Photo Resist Process and the Enhanced-Inductively Coupled Plasma (E-ICP) (Silylation Photo resist 공정과 Enhanced-Inductively Coupled Plasma (E-ICP))

  • 정재성;박세근;오범환
    • Proceedings of the IEEK Conference
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    • pp.922-925
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    • 1999
  • The Silylation photo-resist etch process was tested by Enhanced-ICP dry etcher. The comparison of the two process results of micro pattern etching with 0.25${\mu}{\textrm}{m}$ CD by E-ICP and ICP reveals that E-ICP has better quality than ICP The etch rate and the microloading effect was improved in E-ICP Especially, the problem of the lateral etch was improved in E-ICP.

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mechanism of Equivalent Power Distribution in Parallel Connected ICP for Large Area Processing

  • Lee, Jin-Won;Bae, In-Sik;An, Sang-Hyeok;Jang, Hong-Yeong;Yu, Sin-Jae
    • Proceedings of the Korean Vacuum Society Conference
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    • pp.510-510
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    • 2012
  • 반도체, 디스플레이, 태양광 등의 공정에서 사용되는 웨이퍼의 크기가 증가하고, 생산률이 플라즈마의 밀도에 비례한다는 연구 결과가 발표되면서 대면적 고밀도 플라즈마 소스 개발에 대한 연구가 활발히 진행되고 있다. 특히, ECR, ICP, Helicon plasma 등 고밀도 플라즈마 소스에 대한 관심이 높아지고 있다. 이에 따라, 여러 개의 ICP를 결합한 multiple ICP를 이용해 대면적 고밀도 플라즈마 소스 개발을 진행했다. Multiple ICP의 경우 각 ICP 소스에 같은 power (current)를 공급해야만 균일한 플라즈마 방전이 발생되어 균일도를 확보 할 수 있다. Current controller 같은 추가적인 장비를 설치하지 않고, power를 분배하는 transmission line을 coaxial 형태로 설계하고 같은 길이로 병렬 연결함으로써 각각의 ICP소스에서 균일한 플라즈마를 방전시킬 수 있었다. Power generator에서 보는 각 ICP의 total impedance는 각 ICP 소스의 impedance와 coaxial 형태의 transmission line의 characteristic impedance, frequency, 길이의 함수로 구할 수 있고, 이 total impedance가 일정하기 때문에 current가 균등하게 분배되어 각 ICP소스에 균등한 power 분배가 가능한 것이다. 실질적으로 ICP 소스의 impedance는 플라즈마 방전 유무에 따라 변화하기 때문에 일정하게 유지하는 것은 어렵다. Transmission line의 characteristic을 사용함으로써 ICP의 impedance의 변화에 상관없이 Total impedance를 일정하게 유지시킴으로써 균등한 power 분배가 가능하다는 것을 연구했다. Frequency는 13,56MHz, characteristic impedance를 $50{\Omega}$ (coaxial cable)으로 고정하고, ICP 소스의 플라즈마 방전 유무/antenna turn/소스 위치에 따른 total impedance를 transmission line의 길이에 따라 측정하고, 이를 이론값, 그래프와 비교하였다. 특정 length에서 플라즈마 방전 유무(ICP의 impedance 변화)와 상관없이 비교적 일정한 total impedance를 유지하는 것을 확인 했다. 이것은 특정 길이를 갖는 coaxial형태의 transmission line를 연결하면, total impedance는 플라즈마 방전 유무로 발생하는 ICP의 impedance 변화와 상관없이 일정하게 유지되어 각 ICP소스에 균등한 파워 분배가 가능하다는 것을 보여준 결과이다. 이것을 토대로 frequency에 따라(또는 characteristic impedance에 따라) 균등한 파워 분배가 가능한 coaxial 형태 transmission line의 특정 길이를 구할 수 있고, 대면적 소스에서 균등한 파워 분배를 위한 병렬연결에 적용할 수 있을 것이다.

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Expression in Eschepichia coli of a Cloned Bacillus thuringiensis subsp. kurstaki HDI In-secticidal Protein Gene. (클로닝된 Bacillus thuringiensis subsp. kurstaki HDI 살충성 단백질 유전자의 대장균에서의 발현)

  • 황성희;차성철;유관희;이형환
    • Microbiology and Biotechnology Letters
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    • v.26 no.6
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    • pp.497-506
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    • 1998
  • The expression in Escherichia coli of a cloned insecticidal protein (ICP) gene from Bacillus thuringiensis var. kurstaki HD1 in pHLN1-80 (+) and pHLN2-80(-) plasmids was investigated through deletions in promoters, transcription start point, and termination region. Six recombinant plasmids were constructed in an attempt to analyze the overexpression of the ICP in relations to its gene structure. The amounts of ICP produced from the recombinants were measured by SDS-PAGE and confirmed by Western blot analysis. One clone was not overexpressed which having only -80 bp (contained BtI promoter) part of the ICP gene promoter (without Plac promoter), the right-oriented ICP gene and the termination region. Removal of 350 bp from upstream region of the Plac of the clone pHLN2-80 (-) resulted in overexpression of the ICP. One clone was not overexpressed in which the clone consisted of -72 bp part of the ICP promoter without the transcription start point and the transcriptional termination region, and having the right-oriented ICP gene sequence. One clone consisting of the inverted ICP gene sequence, the -72 bp ICP gene promoter, and without the termination region caused overexpression. One clone which consisted of the inverted ICP gene, the -72 bp ICP gene promoter and the termination sequence was overexpressed. These results indicated that the Plac promoter, transcription termination region, the inverted ICP gene insertion, and the -80 bp or -72 bp part of the ICP gene promoters were concerned in the overexpression of the ICP gene in the recombinant plasmid, and also the overexpression mechanism might result from the disruption of the transcription-suppressing regions in the promoter regions.

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The Development of Silylated Photoresist Etch Process by Enhanced- Inductively Coupled Plasma (Enhanced-Inductively Coupled Plasma (E-ICP)를 이용한 Silylated photoresist 식각공정개발)

  • 조수범;김진우;정재성;오범환;박세근;이종근
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.15 no.3
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    • pp.227-232
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    • 2002
  • The silylated photoresist etch process was tested by enhanced-ICP. The comparison of the two process results of micro pattern etching with $0.35\mu\textrm{m}$ CD by E-ICP and ICP reveals that I-ICP has bettor quality than ICP. The etch rate and the RIE lag effect was improved in E-ICP. Especially, the problem of the lateral etch was improved in E-ICP.

Properties of VN Coatings Deposited by ICP Assisted Sputtering: Effect of ICP Power

  • Chun, Sung-Yong
    • Journal of the Korean Ceramic Society
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    • v.54 no.1
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    • pp.38-42
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    • 2017
  • Vanadium nitride (VN) coatings were deposited using inductively coupled plasma (ICP) assisted sputtering at different ICP powers. Microstructural, crystallographic and mechanical characterizations were performed by FE-SEM, AFM, XRD and nanoindentation. The results show that ICP has significant effects on coating's microstructure, structural and mechanical properties of VN coatings. With an increase in ICP power, coating microstructure evolved from a porous columnar structure to a highly dense one. Single- phase cubic (FCC) VN coatings with different preferential orientations and residual stresses were obtained as a function of ICP power. Average crystal grain sizes of single phase cubic (FCC) VN coatings were decreased from 10.1 nm to 4.0 nm with an increase in ICP power. The maximum hardness of 28.2 GPa was obtained for the coatings deposited at ICP power of 200 W. The smoothest surface morphology with Ra roughness of 1.7 nm was obtained in the VN coating sputtered at ICP power of 200 W.

Improvement of SiO$_2$Etching Characteristics by E-ICP (SiO$_2$식각 특성 개선을 위한 E-ICP와 ICP 식각 비교)

  • 정재성;김진우;라상호;오범환;박세근
    • Proceedings of the IEEK Conference
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    • pp.887-890
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    • 1999
  • The etch characteristics of E-ICP and ICP are compared for the improvement of SiO$_2$ etch Process. Etch rate and etch pattern profile are measured by $\alpha$ -step surface profiler and SEM, respectively. The E-ICP provides improved characteristics on etch rate and surface profile in comparison to ICP process.

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Growth Behavior of Nanocrystalline CrN Coatings by Inductively Coupled Plasma (ICP) Assisted Magnetron Sputtering (유도결합 플라즈마를 이용한 마그네트론 스퍼터링으로 증착된 나노결정질 CrN 코팅막의 성장)

  • Seo, Dae-Han;Chun, Sung-Yong
    • Journal of the Korean Ceramic Society
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    • v.49 no.6
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    • pp.556-560
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    • 2012
  • Nanocrystalline CrN coatings were deposited by DC and ICP-assisted magnetron sputtering on Si (100) substrates. The influences of the ICP power on the microstructural and crystallographic properties of the coatings were investigated. For the generation of the ICP, radio frequency was applied using a dielectric-encapsulated coil antenna installed inside the deposition chamber. As the ICP power increased from 0 to 500W, the crystalline grain size decreased. It is believed that the decrease in the crystal grain size at higher ICP powers is due to resputtering of the coatings as a result of ion bombardment as well as film densification. The preferential orientation of CrN coatings changed from (111) to (200) with an increase in the ICP power. The ICP magnetron sputtering CrN coatings showed excellent surface roughness compared to the DC magnetron sputtering coatings.

Effect of Inductively Coupled Plasma (ICP) Power on the Properties of Ultra Hard Nanocrystalline TiN Coatings (유도결합 플라즈마 파워변화에 따른 초경도 나노결정질 TiN 코팅막의 물성변화)

  • Chun, Sung-Yong
    • Journal of the Korean Ceramic Society
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    • v.50 no.3
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    • pp.212-217
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    • 2013
  • Ultra hard TiN coatings were fabricated by DC and ICP (inductively coupled plasma) magnetron sputtering techniques. The effects of ICP power, ranging from 0 to 300 W, on the coating microstructure, crystallographic, and mechanical properties were systematically investigated with FE-SEM, AFM, HR-XRD and nanoindentation. The results show that ICP power has a significant influence on the coating microstructure and mechanical properties of TiN coatings. With an increasing ICP power, the film microstructure evolves from an apparent columnar structure to a highly dense one. Grain sizes of TiN coatings decreased from 12.6 nm to 8.7 nm with an increase of the ICP power. A maximum nanohardness of 67.6 GPa was obtained for the coatings deposited at an ICP power of 300 W. The crystal structure and preferred orientation in the TiN coatings also varied with the ICP power, exerting an effective influence on film nanohardness.

Early stage of heteroepitaxial Ge growth on Si(100) substrate with surface treatments using inductively coupled plasma (ICP) (ICP 표면 처리된 Si 기판 위에 성장된 Ge 층의 초기 성장 상태 연구)

  • Yang, Hyun-Duk;Kil, Yeon-Ho;Shim, Kyu-Hwan;Choi, Chel-Jong
    • Journal of the Korean Crystal Growth and Crystal Technology
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    • v.21 no.4
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    • pp.153-157
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    • 2011
  • We have investigated the effect of inductively coupled plasma (ICP) treatment on the early growth stage of heteroepitaxial Ge layers grown on Si(100) substrates using low pressure chemical vapor deposition (LPCVD), The Si(100) substrates were treated by ICP process with various source and bias powers, followed by the Ge deposition, The ICP treatment led to the enhancement in the coalescence of Ge islands, The growth rate of Ge on Si(100) with ICP surface treatment is about 5 times higher than that without ICP surface treatment. A missing dimer caused by the ICP surface treatment can act as a nucleation site for Ge adatoms, which could be responsible for the improvement in growth behavior of Ge on Si(100) substrates.