• Title, Summary, Keyword: Ion beam shape

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Study of ion beam shaping of an anode-type ion source coupled with a Whenelt mask

  • Huh, Yunsung;Hwang, Yunseok;Kim, Jeha
    • Applied Science and Convergence Technology
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    • v.27 no.4
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    • pp.66-70
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    • 2018
  • We fabricated an anode-type ion source driven by a charge repulsion mechanism and investigated its beam shape controlled by a Whenelt mask integrated at the front face of the source. The ion beam shape was observed to vary by changing the geometry of the Whenelt mask. As the angle of inclination of the Whenelt mask was varied from $40^{\circ}$ to $60^{\circ}$, the etched area at a thin film was reduced from 20 mm to 7.5 mm at the working distance of 286 mm, and the light transmittance through the etched surface was increased from 78% to 80%, respectively. In addition, for the step height difference, ${\Delta}$ between the inner mask and the outer mask of ${\Delta}=0$, -1 mm, and +1 mm, we observed the ion beam shape was formed to be collimated, diverged, and focused, respectively. The focal length of the focused beam was 269 mm. We approved experimentally a simple way of controlling the electric field of the ion beam by changing the geometry of the Whenelt mask such that the initial direction of the ion beam in the plasma region was manipulated effectively.

Characteristics of Critical Pressure for a Beam Shape of the Anode Type ion Beam Source

  • Huh, Yunsung;Hwang, Yunseok;Kim, Jeha
    • Applied Science and Convergence Technology
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    • v.27 no.4
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    • pp.61-65
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    • 2018
  • We studied the critical pressure characteristics of an anode type ion beam source driven by both charge repulsion and diffusion mechanism. The critical pressure $P_{crit}$ of the diffusion type ion beam source was linearly decreased from 2.5 mTorr to 0.5 mTorr when the gas injection was varied in 3~10 sccm, while the $P_{crit}$ of the charge repulsion ion beam source was remained at 3.5 mTorr. At the gas injection of 10 sccm, the range of having normal beam shape in the charge repulsion ion beam source was about 6.4 times wider than that in the diffusion type ion beam source. An impurity of Fe 2p (KE = 776.68 eV) of 12.88 at. % was observed from the glass surface treated with the abnormal beam of the charge repulsion type ion beam source. The body temperature of the diffusion type ion beam source was observed to increase rapidly at the rate of $1.9^{\circ}C/min$ for 30 minutes and to vary slowly at the rate of $0.1^{\circ}C/min$ for 200 minutes for an abnormal beam and normal beam, respectively.

Ion Beam Induced Micro/Nano Fabrication: Shape Fabrication (이온빔을 이용한 마이크로/나노 가공: 형상가공)

  • Kim, Heung-Bae;Hobler, Gerhard
    • Journal of the Korean Society for Precision Engineering
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    • v.24 no.10
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    • pp.109-116
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    • 2007
  • Focused ion beams are a potential tool for micro/nano structure fabrication while several problems still have to be overcome. Redeposition of sputtered atoms limits the accurate fabrication of micro/nano structures. The challenge lies in accurately controlling the focused ion beam to fabricate various arbitrary curved shapes. In this paper a basic approach for the focused ion beam induced direct fabricate of fundamental features is presented. This approach is based on the topography simulation which naturally considers the redeposition of sputtered atoms and sputtered yield changes. Fundamental features such as trapezoidal, circular and triangular were fabricated with this approach using single or multiple pass box milling. The beam diameter(FWHM) and maximum current density are 68 nm and $0.8 A/cm^2$, respectively. The experimental investigations show that the fabricated shape is well suited for the pre-designed fundamental features. The characteristics of ion beam induced direct fabrication and shape formation will be discussed.

Fabrication of a Nano Pattern Using Focused Ion Beam (집속이온빔을 이용한 나노 패턴 형성)

  • Han J.;Min B.K.;Lee S.J.;Park C.W.;Lee J.H.
    • Proceedings of the Korean Society of Precision Engineering Conference
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    • pp.1531-1534
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    • 2005
  • Nano pattern is being utilized to produce micro optical components, sensors, and information storage devices. In this study, a study on nano pattern fabrication using raster-scan type Focused Ion Beam (FIB) milling is introduced. Because the intensity of ion beam has Gaussian distribution, the overlapping of the Gaussian beam results in a 3D pattern, and the shape of the pattern can be adjusted by variation of FIB milling parameters, such as overlap, ion dose, and dwell time. The Gaussian shape of single beam intensity has been investigated by experiment, and 3D nano patterns with pitch of 200nm generated by FIB is demonstrated.

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Simulation Study of the Beam Trajectory Effect on the Magnetic Field Distribution of a Duoplasmatron

  • Park, Sae-Hoon;Lee, Sang-Hun;Kim, Yu-Seok
    • Journal of the Korean Physical Society
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    • v.73 no.8
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    • pp.1093-1098
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    • 2018
  • Recently, a gas interface system was developed for accelerator mass spectrometry with a cesium sputtering ion source. A gaseous ion source was proposed and designed to eliminate the solidification and graphitization process in radiocarbon dating. A simulation study of the ion source for a gas sample analysis system was conducted to investigate the characteristics of the ion source when different anode shapes were used, and the results are reported in this paper. The use of different anode shapes revealed the influence of magnetic field penetration on the plasma within the expansion cup. An axial magnetic field constrains the discharge, producing greater ionization density. The ion beam trajectories from the ion source were calculated using the SIMION program to examine the dependence of the changes in the magnetic field distribution on the shape of the ion source's anode.

A Study on the Shape of the Pattern Milled Using FIB (집속이온빔 연마에 의한 패턴의 형태에 관한 연구)

  • Jung, Won-Chae
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.27 no.11
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    • pp.679-685
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    • 2014
  • For the measurements of surface shape milled using FIB (focused ion beam), the silicon bulk, $Si_3N_4/Si$, and Al/Si samples are used and observed the shapes milled from different sputtering rates, incident angles of $Ga^+$ ions bombardment, beam current, and target material. These conditions also can be influenced the sputtering rate, raster image, and milled shape. The fundamental ion-solid interactions of FIB milling are discussed and explained using TRIM programs (SRIM, TC, and T-dyn). The damaged layers caused by bombarding of $Ga^+$ ions were observed on the surface of target materials. The simulated results were shown a little bit deviation with the experimental data due to relatively small sputtering rate on the sample surface. The simulation results showed about 10.6% tolerance from the measured data at 200 pA. On the other hand, the improved analytical model of damaged layer was matched well with experimental XTEM (cross-sectional transmission electron microscopy) data.

Improvement of the Carbon Nanotube Tip by Focused Ion Beam and it Performance Evaluation (탄소나노튜브 팁의 집속이온빔에 의한 개선 및 성능 평가)

  • Han, Chang-Soo;Shin, Young-Hyun;Yoon, Yu-Hwan;Lee, Eung-Sug
    • Transactions of the Korean Society of Mechanical Engineers A
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    • v.31 no.1
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    • pp.139-144
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    • 2007
  • This paper presents development of carbon nanotube (CNT) tip modified by focused ion beam (FIB) and experimental results in non-contact mode of atomic force microscopy (AFM) using fabricated tip. We used an electric field which causes dielectrophoresis, to align and deposit CNTs on a conventional silicon tip. The morphology of the fabricated CNT tip was then modified into a desired shape using focused ion beam. We measured anodic aluminum oxide sample and trench structure to estimate the performance of FIB-modified tip and compared with those of conventional Si tip. We demonstrate that FIB modified tip in non contact mode had superior characteristics than conventional tip in the respects of wear, image resolution and sidewall measurement.

Advanced Methodologies for Manipulating Nanoscale Features in Focused Ion Beam

  • Kim, Yang-Hee;Seo, Jong-Hyun;Lee, Ji Yeong;Ahn, Jae-Pyoung
    • Applied Microscopy
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    • v.45 no.4
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    • pp.208-213
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    • 2015
  • Nanomanipulators installed in focused ion beam (FIB), which is used in the lift-out of lamella when preparing transmission electron microscopy specimens, have recently been employed for electrical resistance measurements, tensile and compression tests, and in situ reactions. During the pick-up process of a single nanowire (NW), there are crucial problems such as Pt, C and Ga contaminations, damage by ion beam, and adhesion force by electrostatic attraction and residual solvent. On the other hand, many empirical techniques should be considered for successful pick-up process, because NWs have the diverse size, shape, and angle on the growth substrate. The most important one in the in-situ precedence, therefore, is to select the optimum pick-up process of a single NW. Here we provide the advanced methodologies when manipulating NWs for in-situ mechanical and electrical measurements in FIB.

The Characteristics of Focused Ion Beam Utilized Silicon Mold Fabrication on the Micro/Nano Scale (집속이온빔을 이용한 마이크로/나노스케일에서의 실리콘 금형 가공 특성)

  • Kim, Heung-Bae;Noh, Sang-Lai
    • Journal of the Korean Society for Precision Engineering
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    • v.28 no.8
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    • pp.966-974
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    • 2011
  • The use of ion beams in the micro/nano scale is greatly increased by technology development. Especially, focused ion beams (FIBs) have a great potential to fabricate the device in sub micro scale. Nevertheless, FIB has several limitations, surface swelling in low ion dose regime, precipitation of incident ions, and the redeposition effect due to the sputtered atoms. In this research, we demonstrate a way which can be used to fabricate mold structures on a silicon substrate using FIBs. For the purpose of the demonstration, two essential subjects are necessary. One is that focused ion beam diameter as well as shape has to be measured and verified. The other one is that the accurate rotational symmetric model of ion-solid interaction has to be mathematically developed. We apply those two, measured beam diameter and mathematical model, to fabricate optical lenses mold on silicon. The characteristics of silicon mold fabrication will be discussed as well as simulation results.

Machining of The Micro Nozzle Using Focused Ion Beam (집속이온빔을 이용한 마이크로 노즐의 제작)

  • Kim G.H.;Min B.K.;Lee S.J.;Park C.W.;Lee J.H.
    • Proceedings of the Korean Society of Precision Engineering Conference
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    • pp.1194-1197
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    • 2005
  • Micro nozzle is employed as a dynamic passive valve in micro fluidic devices. Micro nozzle array is used in micro droplet generation in bio-medical applications and propulsion device for actuating satellite and aerospace ship in vacuum environments. Aperture angle and the channel length of the micro nozzle affect its retification efficiency, and thus it is needed to produce micro nozzle precisely. MEMS process has a limit on making a micro nozzle with high-aspect ratio. Reactive ion etching process can make high-aspect ratio structure, but it is difficult to make the complex shape. Focused ion beam deposition has advantage in machining of three-dimensional complex structures of sub-micron size. Moreover, it is possible to monitor machining process and to correct defected part at simultaneously. In this study, focused ion beam deposition was applied to micro nozzle production.

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