• Title, Summary, Keyword: Ion-doping

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Low temperature pulsed ion shower doping for poly-Si TFT on plastic

  • Kim, Jong-Man;Hong, Wan-Shick;Kim, Do-Young;Jung, Ji-Sim;Kwon, Jang-Yeon;Noguchi, Takashi
    • 한국정보디스플레이학회:학술대회논문집
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    • pp.95-97
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    • 2004
  • We studied a low temperature ion doping process for poly-Si Thin Film Transistor (TFT) on plastic substrates. The ion doping process was performed using an ion shower system, and subsequently, excimer laser annealing (ELA) was done for the activation. We have studied the crystallinity of Si surface at each step using UV-reflectance spectroscopy and the sheet resistance using 4-point probe. We found that the temperature has increased during ion shower doping for a-Si film and the activation has not been fulfilled stably because of the thermal damage against the plastic substrate. By trying newly a pulsed ion shower doping, the ion was efficiently incorporated into the a-Si film on plastic substrate. The sheet resistance decreased with the increase of the pulsed doping time, which was corresponded to the incorporated dose. Also we confirmed a relationship between the crystallinity and the sheet resistance. A sheet resistance of 300 ${\Omega}$/sq for the Si film of 50nm thickness was obtained with a good reproducibility. The ion shower technique is a promising doping technique for ultra low temperature poly-Si TFTs on plastic substrates as well as those on glass substrates.

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Ion Shower Doping Effect in Diamond and Diamond-Like Carbon Films

  • Jin Jang;Chun, Soo-Chul;Park, Kyu-Chang;Kim, Jea-Gak;Moon, Jong-Hyun;Park, Jong-Hyun;Song, Kyo-Jun;Lee, Seung-Min;Oh, Myung-Hwan
    • Journal of the Korean Vacuum Society
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    • v.4 no.S2
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    • pp.34-39
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    • 1995
  • we have studied the possibility of n-type doping in diamond and DLC films. After ion doping of either p-type or n-type, the electrical conductivities were remarkably increased and conductivity activation energies were decreased. The Raman intensity at 1330 cm-1 decreases slightly by ion doping of $7.2\times 10^{16}\; \textrm{cm}^{-2}$. The increase in conductivity by ion doping appears to be arised from the combined effects by substitutional doping and graphitization by ion damage.

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A Study on Ion Shower Doping in Si Thin Film (이온 도핑 방법에 의한 실리콘 박막의 도핑 연구)

  • Yoo, Soon-Sung;Jun, Jung-Mok;Lee, Kyung-Ha;Moon, Byeong-Yeon;Jang, Jin
    • Journal of the Korean Institute of Telematics and Electronics A
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    • v.31A no.5
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    • pp.106-112
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    • 1994
  • We have developed a large area ion shower doping system with an RF plasma ion source. The ion current density (i.e., doping concentration) increases with RF power and acceleration voltage. Using this technique, we investigated the optimum condition for ion doping of phosphorus in a-Si:H and poly-Si films. The optimum acceleration voltage and doping time are 6KV and 90sec, respectively, in a-Si:H films. Under this condition the electrical conductivity of ion-doped a-Si:H film is obtained ~10$^{-3}$/cm at room temperature. The sheet resistance decreases witnh acceleration voltage in ion-doped poly-Si, and a heavily-doped layer with a sheet resistance of 920$\Omega$/ㅁ is obtained by using ion doping and subsequent activation.

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Fabrication of excimer laser annealed poly-si thin film transistor by using an elevated temperature ion shower doping

  • Park, Seung-Chul;Jeon, Duk-Young
    • Electrical & Electronic Materials
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    • v.11 no.11
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    • pp.22-27
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    • 1998
  • We have investigated the effect of an ion shower doping of the laser annealed poly-Si films at an elevated substrate temperatures. The substrate temperature was varied from room temperature to 300$^{\circ}C$ when the poly-Si film was doped with phosphorus by a non-mass-separated ion shower. Optical, structural, and electrical characterizations have been performed in order to study the effect of the ion showering doping. The sheet resistance of the doped poly-Si films was decreased from7${\times}$106 $\Omega$/$\square$ to 700 $\Omega$/$\square$ when the substrate temperature was increased from room temperature to 300$^{\circ}C$. This low sheet resistance is due to the fact that the doped film doesn't become amorphous but remains in the polycrystalline phase. The mildly elevated substrate temperature appears to reduce ion damages incurred in poly-Si films during ion-shower doping. Using the ion-shower doping at 250$^{\circ}C$, the field effect mobility of 120 $\textrm{cm}^2$/(v$.$s) has been obtained for the n-channel poly-Si TFTs.

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Analysis of Glycerol with Isolation of Endogenous Interferences using "Dilute and Shoot" Strategy and High-Resolution Mass Spectrometry in Human Urine for Antidoping Testing

  • Kim, Yongseok;Min, Hophil;Sung, Changmin;Park, Ju-hyung;Son, Junghyun;Lee, Kang Mi;Kim, Ho Jun;Lee, Jaeick;Kwon, Oh-Seung;Kim, Ki Hun
    • Mass Spectrometry Letters
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    • v.7 no.4
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    • pp.111-115
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    • 2016
  • Glycerol was identified and isolated from endogenous interferences during analysis of human urine using high-resolution mass spectrometry (HRMS) for doping control. Urinary sample preparation was simple; the samples were diluted with an organic solvent and then analyzed using a liquid chromatography-mass spectrometry ("dilute and shoot" method). Although the interfering ion peaks were observed at the similar retention time of glycerol, the inference could be identified by isolation with HRMS and further investigation. Thus, creatinine was identified as the endogenous interference for glycerol analysis and it also caused ion suppression resulting in the decrease of glycerol signal. This study reports the first identification and efficient isolation of endogenous interferences in human urine for "dilute and shoot" method. The information about ion suppression could be novel to prevent overestimation or a false result for antidoping analysis.

Dopant-Activation and Damage-Recovery of Ion-Shower-Doped Poly-Si through $PH_3/H_2$ after Furnace Annealing

  • Kim, Dong-Min;Kim, Dae-Sup;Ro, Jae-Sang;Choi, Kyu-Hwan;Lee, Ki-Yong
    • Journal of Information Display
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    • v.5 no.1
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    • pp.1-6
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    • 2004
  • Ion shower doping with a main ion source of $P_2H_x$ using a source gas mixture of $PH_3/H_2$ was conducted on excimer-laser- annealed (ELA) poly-Si. The crystallinity of the as-implanted samples was measured using a UV-transmittance. The measured value of as-implanted damage was found to correlate well with the one calculated through/obtained from TRIM-code simulation. The sheet resistance was found to decrease as the acceleration voltage increased from 1 kV to 15 kV at a doping time of 1 min. However, it increases as the acceleration voltage increases under severe doping conditions. Uncured damage after furnace annealing is responsible for the rise in sheet resistance.

Annealing Characteristic of Phosphorus Implanted Silicon Films using an Ion Mass Doping Method (Ion Mass Doping 법을 이용한 Phosphorus 주입된 실리콘 박막의 Annealing 특성)

  • 강창용;최덕균;주승기
    • Journal of the Korean institute of surface engineering
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    • v.27 no.4
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    • pp.234-240
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    • 1994
  • A large area impurity doping method for poly-Si TFT LCD has been developed. The advantage of this method is the doping of impurities into Si over a large area without mass separation and beam scanning. Phosphorus diluted in hydrogen was discharged by RF(13.56MHz) power and ions from discharged gas were accelerated by DC acceleration voltage and were implanted into deposited Si films. The annealing characteristic of this method was similar to that of the ion implantation method in the low doping concentration. Three mechanisms were evolved in the annealing characteristics of phosphorus doped Si films. Point defects annihilation and the retrogradation of dopant atoms at grain boundaries as a result of grain growth played a major role at low and high annealing temperature, respectively. However, due to the dopant segregation, the reverse annealing range existed at intermediate annealing temperature.

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Phenomenal study on the dopant activation behavior in polysilicon thin films doped by non-mass separated ion mass doping technique (비질량 분리 이온 질량 주입법으로 도핑시킨 다결정 박막의 도판트 활성화 거동)

  • Yoon, Jin-Young;Choi, Duck-Kyun
    • Journal of the Korean Crystal Growth and Crystal Technology
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    • v.7 no.1
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    • pp.143-150
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    • 1997
  • The electrical properties of polysilicon thin films implanted with $B_2H_6$ diluted in $H_2$ as dopant source using ion mass doping technique and the effect of radiation damage on the dopant activation behavior were investigated. Comparing the SIMS profiles of boron in polysilicon films with that obtained from computer simulation using TRIM92 the most probable ion species were $B_2H_x\;^+$(x=1, 2, 3‥‥) type molecular ions. As a result of the Implantation of energetic massive ions, a continuous amorphized layer was created in polysilicon films where the fraction of amorphized layer varied with doping time. This amorphization comes from the fact that mass separation of implanting species is not employed in this ion mass doping technique. In the dopant activation behavior, reverse annealing phenomenon appeared in the intermediate annealing temperature range for a severely damaged specimen. The experimental result showed that the off-state current of the p-channel polysilicon thin film transistor is dependent on the degree of radiation damage.

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Study of P-type Wafer Doping for Solar Cell Using Atmospheric Pressure Plasma (대기압 플라즈마를 이용한 P타입 태양전지 웨이퍼 도핑 연구)

  • Yun, Myoungsoo;Jo, Taehun;Park, Jongin;Kim, Sanghun;Kim, In Tae;Choi, Eun Ha;Cho, Guangsup;Kwon, Gi-Chung
    • Current Photovoltaic Research
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    • v.2 no.3
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    • pp.120-123
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    • 2014
  • Thermal doping method using furnace is generally used for solar-cell wafer doping. It takes a lot of time and high cost and use toxic gas. Generally selective emitter doping using laser, but laser is very high equipment and induce the wafer's structure damage. In this study, we apply atmospheric pressure plasma for solar-cell wafer doping. We fabricated that the atmospheric pressure plasma jet injected Ar gas is inputted a low frequency (1 kHz ~ 100 kHz). We used shallow doping wafers existing PSG (Phosphorus Silicate Glass) on the shallow doping CZ P-type wafer (120 ohm/square). SIMS (Secondary Ion Mass Spectroscopy) are used for measuring wafer doping depth and concentration of phosphorus. We check that wafer's surface is not changed after plasma doping and atmospheric pressure doping width is broaden by increase of plasma treatment time and current.