• Title, Summary, Keyword: Lateral power device

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The Improvement in the Forward Blocking Characteristics of Lateral Trench Electrode Power MOSFET by using Local Doping (로컬 도핑을 이용한 수평형 트렌치 전극 파워 MOSFET의 순방향 블로킹특성 개선)

  • Kim, Dae-Jong;Kim, Dae-Won;Sung, Man-Young;Rhie, Dong-Hee;Kang, Ey-Goo
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • pp.19-22
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    • 2003
  • In this paper, a new small size Lateral Trench Electrode Power MOSFET with local doping is proposed. This new structure is based on the conventional lateral power MOSFET. The entire electrodes of proposed device are placed in trench oxide. The forward blocking voltage of the proposed device is improved by 3.3 times with that of the conventional lateral power MOSFET. The forward blocking voltage of proposed device is about 500V. At the same size, a increase of the forward blocking voltage of about 3.3 times relative to the conventional lateral power MOSFET is observed by using TMA-MEDICI which is used for analyzing device characteristics. Because the electrodes of the proposed device are formed in trench oxide respectively, the electric field in the device are crowded to trench oxide. And because of the structure which has a narrow drain doping width, the punch through breakdown can be occurred in higher voltage than that of conventional lateral power MOSFET. We observed that the characteristics of the proposed device was improved by using TMA-MEDICI and that the fabrication of the proposed device is possible by using TMA-TSUPREM4.

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A Lateral Trench Electrode Power MOSFET with Superior Electrical Characteristics for Smart Power IC Systems (스마트 파워 IC를 위한 트렌치 파워 MOSFET의 전기적 특성에 관한 연구)

  • 성만영;김대종;강이구
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.17 no.1
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    • pp.27-30
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    • 2004
  • In this paper, a new small size Lateral Trench Electrode Power MOSFET is proposed. This new structure, called "LTEMOSFET"(Lateral Trench Electrode Power MOSFET), is based on the conventional MOSFET. The entire electrode of LTEMOSFET is placed in trench oxide. The forward blocking voltage of the proposed LTEMOSFET is improved by 1.6 times with that of the conventional MOSFET. The forward blocking voltage of LTEMOSFET is 250V. At the same size, a increase of the forward blocking voltage of about 1.6 times relative to the conventional MOSFET is observed by using TMA-MEDICI which is used for analyzing device characteristics. Because the electrodes of the proposed device are formed in trench oxide, the electric field in the device are crowded to trench oxide. We observed that the characteristics of the proposed device was improved by using TMA-MEDICI and that the fabrication of the proposed device is possible by using TMA-TSUPREM4.

A Lateral Trench Electrode Power MOSFET with Improved Blocking Characteristics (개선된 항복 특성을 갖는 수평형 트렌치 전극 파워 MOSFET)

  • Kim, Dae-Jong;Kim, Sang-Sig;Sung, Man-Young;Kang, Ey-Goo;Rhie, Dong-Hee
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • pp.323-326
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    • 2003
  • In this paper, a new small size Lateral Trench Electrode Power MOSFET is proposed. This new structure, called "LTEMOSFET"(Lateral Trench Electrode Power MOSFET), is based on the conventional MOSFET. The entire electrode of LTEMOSFET is placed in trench oxide. The forward blocking voltage of the proposed LTEMOSFET is improved by 1.6 times with that of the conventional MOSFET. The forward blocking voltage of LTEMOSFET is 250V. At the same size, a increase of the forward blocking voltage of about 1.6 times relative to the conventional MOSFET is observed by using TMA-MEDICI which is used for analyzing device characteristics. Because the electrodes of the proposed device are formed in trench oxide, the electric field in the device are crowded to trench oxide. We observed that the characteristics of the proposed device was improved by using TMA-MEDICI and that the fabrication of the proposed device is possible by using TMA-TSUPREM4.

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The Study of Improving Forward Blocking Characteristics for Small Sized Lateral Trench Electrode Power MOSFET using Trench Isolation (수평형 파워 MOSFET에 있어서 트렌치 Isolation 적용에 의한 순방향 항복특성 개선을 위한 새로운 소자의 설계에 관한 연구)

  • Kim, Jin-Ho;Kim, Je-Yoon;Ryu, Jang-Woo;Sung, Man-Young;Kim, Ki-Nam
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • pp.9-12
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    • 2004
  • In this paper, a new small sized Lateral Trench Electrode Power MOS was proposed. This new structure, called LTEMOS(Lateral Trench Electrode Power MOS), was based on the conventional lateral power MOS. But the entire electrodes of LTEMOS were placed in trench oxide. The forward blocking voltage of the proposed LTEMOS was improved by 1.5 times with that of the conventional lateral power MOS. The forward blocking voltage of LTEMOS was about 240 V. At the same size, an improvement of the forward blocking voltage of about 1.5 times relative to the conventional MOS was observed by using ISE-TCAD which was used for analyzing device's electrical characteristics. Because all of the electrodes of the proposed device were formed in each trench oxide, the electric field was crowded to trench oxide and punch-through breakdown was occurred, lately.

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Simulation of a Novel Lateral Trench Electrode IGBT with Improved Latch-up and Forward Blocking Characteristics

  • Kang, Ey-Goo;Moon, Seung-Hyun;Kim, Sangsig;Sung, Man-Young
    • Transactions on Electrical and Electronic Materials
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    • v.2 no.1
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    • pp.32-38
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    • 2001
  • A new small sized Lateral Trench electrode Insulated Gate Bipolar Transistor(LTEIGBT) was proposed to improve the characteristics of conventional Lateral IGBT (LIGBT) and Lateral Trench gate IGBT (LTIGBT). The entire electrode of LTEIGBT was replace with trench-type electrode. The LTEIGBT was designed so that the width of device was no more than 19 ㎛. The Latch-up current densities of LIGBT, LTIGBT and the proposed LTEIGBT were 120A/㎠, 540A/㎠, and 1230A/㎠, respectively. The enhanced latch-up capability of the LTEIGBT was obtained through holes in the current directly reaching the cathode via the p+ cathode layer underneath n+ cathode layer. The forward blocking voltage of the LTEIGBT is 130V. Conventional LIGBT and LTIGBT of the same size were no more than 60V and 100V, respectively. Because the the proposed device was constructed of trench-type electrodes, the electric field moved toward trench-oxide layer, and punch through breakdown of LTEIGBT is occurred, lately.

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The Effect of a Piezoelectric Ultrasonic Scaler with Curette Tip on Root Substitute Removal in Vitro (큐렛형 팁을 장착한 압전방식 초음파 치석제거기가 치근대체물 삭제에 미치는 영향)

  • Lee, Young-Kyoo
    • Journal of Periodontal and Implant Science
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    • v.30 no.2
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    • pp.429-442
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    • 2000
  • Based on current evidence in the literature, it is known that endotoxin is a weakly adherent surface phenomenon and that power-driven instruments can be used to accomplish definitive root detoxification and maximal wound healing without overinstrumentation of root and without extensive cementum removal. And one of the newly developed curette tips used with low power of piezoelectric ultrasonic scaler, is effective to remove calculus and not to remove the excessive cementum. The purpose of this study is therefore, to assess the influence of ultrasonic power and various working parameters on root substitute removal when instrumentation is performed with the curette tip on piezoelectric ultrasonic scaler. This study assessed defect depth, width and area resulting from instrumentation using a piezoelectric ultrasonic scaler with a curette type tip in vitro to acrylic resin block as a root substitute. The working parameters was standardized by the sledge device which controls lateral force(0.5 N, 1 N, 2 N) and instrumentation time(5 sec, 10 sec, 20 sec) and power setting was adjusted 0,2,4,8 in P mode. Power setting had the greatest influence on defect depth compared to lateral force and instrumentation time(standardized regression parameter estimates${\pm}$standard error, $0.37{\pm}0.02$, $0.19{\pm}0.02$, $0.07{\pm}0.02$). The effects on defect area also greatest for power setting($0.57{\pm}0.03$) compared to lateral force and instrumentation time($0.33{\pm}0.03$, $0.12{\pm}0.03$). The effect of the power setting on the defect width($0.15{\pm}0.01$) is not so great as defect depth or defect area compared to lateral force($0.12{\pm}0.01$) and effect of instrumentation time is minimal($0.02{\pm}0.01$). It could be concluded that the power setting has the greatest influence on the defect depth and area in curette type tip with low power of piezoelectric ultrasonic device. Many parameters can be adjusted in various situation in clinical use of piezoelectric ultrasonic scaler but the power setting is the first parameter to be adjusted.

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A Small Scaling Lateral Trench IGBT with Improved Electrical Characteristics for Smart Power IC

  • Moon, Seung Hyun;Kang, Ey Goo;Sung, Man Young
    • Transactions on Electrical and Electronic Materials
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    • v.2 no.4
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    • pp.15-18
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    • 2001
  • A new small scaling Lateral Trench Insulated Gate Bipolar Transistor (SSLTIGBT) was proposed to improve the characteristics of the device. The entire electrode of the LTIGBT was replaced with a trench-type electrode. The LTIGBT was designed so that the width of device was no more than 10 ${\mu}{\textrm}{m}$. The latch-up current densities were improved by 4.5 and 7.6 times, respectively, compared to those of the same sized conventional LTIGBT arid the conventional LTIGBT which has the width of 17 ${\mu}{\textrm}{m}$. The enhanced latch-up capability of the SSLTIGBT was obtained due to the fact that the hole current in the device reaches the cathode via the p+ cathode layer underneath the n+ cathode layer, directly. The forward blocking voltage of the SSLTIGBT was 125 V. At the same size, those of the conventional LTIGBT and the conventional LTIGBT with the width of 17 ${\mu}{\textrm}{m}$ were 65 V and 105 V, respectively. Because the proposed device was constructed of trench-type electrodes, the electric field In the device were crowded to trench oxide. Thus, the punch through breakdown of LTEIGBT occurred late.

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A Small Scaling Lateral Trench IGBT with Improved Electrical Characteristics for Smart Power IC (스마트 파워 IC를 위한 향상된 전기특성의 소규모 횡형 트랜치 IGBT)

  • 문승현;강이구;성만영
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • pp.267-270
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    • 2001
  • A new small scaling Lateral Trench Insulated Gate Bipolar Transistor (SSLTIGBT) was proposed to improve the characteristics of the device. The entire electrode of the LTIGBT was replaced with a trench-type electrode. The LTIGBT was designed so that the width of device was no more than 10$\mu\textrm{m}$. The latch-up current densities were improved by 4.5 and 7.6 times, respectively, compared to those of the same sifted conventional LTIGBT and the conventional LTIGBT which has the width of 17$\mu\textrm{m}$. The enhanced latch-up capability of the SSLTIGBT was obtained due to the fact that the hole current in the device reaches the cathode via the p+ cathode layer underneath the n+ cathode layer, directly. The forward blocking voltage of the SSLTIGBT was 125 V. At the same size, those of the conventional LTIGBT and the conventional LTIGBT with the width of 17$\mu\textrm{m}$ were 65 V and 105 V, respectively. Because the proposed device was constructed of trench-type electrodes, the electric field in the device were crowded to trench oxide. Thus, the punch through breakdown of LTEIGBT occurred late.

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Electrical Characteristics of 500V LIGBT for Intelligent Power ICs (인텔리전트 파워 IC용 500V급 LIGBT의 전기적 특성에 관한 연구)

  • Kang, Ey-Goo;Sul, Won-Ji;Seo, Hyun-Ju;Kim, Hyun-Mi;Sung, Man-Young
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • pp.183-184
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    • 2005
  • In this paper. a new small size Lateral Trench Electrode Power IGBT is proposed. The entire electrode of proposed LIGBT is placed in trench oxide. The forward blocking voltage of the proposed LIGBT is improved by 1.6 times with that of the conventional LIGBT. The forward blocking voltage of proposed LIGBT is 500V. At the same size. a increase of the forward blocking voltage of about 1.6 times relative to the conventional LIGBT is observed by using TMA-MEDICI which is used for analyzing device characteristics. Because the electrodes of the proposed device are formed in trench oxide. the electric field in the device are crowded to trench oxide. We observed that the characteristics of i the proposed device was improved by using TMA-MEDICI and that the fabrication of the proposed device is possible by using TMA-TSUPREM4.

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