• Title, Summary, Keyword: Lithography

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The Development of SOR Lithography Technology

  • Ishihara, Sunao
    • The Magazine of the IEIE
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    • v.22 no.2
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    • pp.37-50
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    • 1995
  • This paper reviews NTT Laboratories' research and development of x-ray lithography during the last ten years since the application of synchrotron orbital radiation(SOR). First, the historical background of x-ray lithograhpy research, NTT's research programs on synchrotron x-ray lithography(SOR lithography), and the current status of NTT's SOR lithography system are overviewed. Then, the key elements of SOR lithography system are reviewed, including the electron storage ring, the x-ray stepper, and the x-ray mask. Finally the appilcation of SOR lithography technology to device fabrication is reported.

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Sub 150nm Soft-Lithography using the monomer based thermally curable resin (Monomer based thermally curable resin을 이용한 150nm 급 Soft-Lithography)

  • Yang K.Y.;Hong S.H.;Lee H.
    • Proceedings of the Korean Society of Precision Engineering Conference
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    • pp.676-679
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    • 2005
  • Nano imprint Lithography (NIL) is regarded as one of the next-generation lithography technologies with EUV lithography, immersion lithography, Laser interference lithography. Because a Si wafer stamp and a quartz stamp, used to imprinting usually are very expensive and easily broken, it is suggested that master stamp is duplicated by PDMS and the PDMS stamp uses to imprint .For using the PDMS stamp, a thermally curable monomer resin was used for the imprinting process to lower pressure and temperature. As a result, NIL patterns were successfully fabricated.

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Manufacturing of SPL system having a large scanning area (대면적 SPL(Scanning Probe Lithography) 시스템 제작)

  • Yoon, Sang-Joon;Kim, Won-Hyo;Seong, Woo-Kyeong;Park, Young-Geun;Hwang, Kyu-Ho;Chung, Kwan-Soo
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • pp.699-702
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    • 2004
  • Next generation lithography technologies, such as EBL(Electron Beam Lithography), X-ray lithography, SPL(Scanning Probe Lithography), have been studied widely for getting over line width limitation of photolithography. Among the next generation lithography technologies, SPL has been highlighted because of its high resolution advantage. But is also has problem which are slow processing time and sample size limitation. The purpose of this study is complement of present SPL system. Brand new SPL system was made. SPL test was performed with the system in ultra thin PMMA(polymethlymethacrylate) film.

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Fabrication of Nanoscale Structures using SPL and Soft Lithography (SPL과 소프트 리소그래피를 이용한 나노 구조물 형성 연구)

  • Ryu Jin-Hwa;Kim Chang-Seok;Jeong Myung-Yung
    • Journal of the Korean Society for Precision Engineering
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    • v.23 no.7
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    • pp.138-145
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    • 2006
  • A nanopatterning technique was proposed and demonstrated for low cost and mass productive process using the scanning probe lithography (SPL) and soft lithography. The nanometer scale structure is fabricated by the localized generation of oxide patterning on the H-passivated (100) silicon wafer, and soft lithography was performed to replicate of nanometer scale structures. Both height and width of the silicon oxidation is linear with the applied voltagein SPL, but the growth of width is more sensitive than that of height. The structure below 100 nm was fabricated using HF treatment. To overcome the structure height limitation, aqueous KOH orientation-dependent etching was performed on the H-passivated (100) silicon wafer. Soft lithography is also performed for the master replication process. Elastomeric stamp is fabricated by the replica molding technique with ultrasonic vibration. We showed that the elastomeric stamp with the depth of 60 nm and the width of 428 nm was acquired using the original master by SPL process.

Construction of Laser Lithography System using Method of Monitoring the Focal Point (초점 모니터 방법을 이용한 레이져 Lithography 장치의 제작과 응용)

  • 이도형
    • Proceedings of the Optical Society of Korea Conference
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    • pp.222-226
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    • 1990
  • This paper represents the construction of laser beam writing system, laser lithography, using new method that guarantees convenience and accuracy in laser focusing. The X, Y translation stage using DC motors was controlled by the computer. Minimum line width of 1.6${\mu}{\textrm}{m}$ was obtained by the laser lithography system.

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Development of process flexibility by SOG resist analysis with AFM lithography (AFM lithography에 있어서 SOG resist의 특성 분석에 의한 공정 여유도 개선)

  • 최창훈;이상훈;김수길;최재혁;박선우
    • Journal of the Korean Vacuum Society
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    • v.5 no.4
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    • pp.309-314
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    • 1996
  • We found that SOG which had been used in plarnarization of VLSI circuit fabrication at present could be used as a resist material for AFM lithography. In this experiment on the basis of previous studies, we improved the process flexibility by controlling the coating film thickness, etching time, etching selectively and proper applied voltage on the pattern size to apply for practical VLSI lithography process. We obtained pattern with the current of 5 nA at 60 V. The line width was 800 $\AA$. With the developed flexibility of SOG as a resist material, AFM lithography will be a expedient technique in the next generation DRAM fabrication.

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The Evaluation of Ceria Slurry for Blank Mask Polishing for Photo-lithography Process

  • Kim, Hyeok-Min;Gwon, Tae-Yeong;Jo, Byeong-Jun;Park, Jin-Gu
    • Proceedings of the Materials Research Society of Korea Conference
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    • pp.37.2-37.2
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    • 2011
  • 반도체공정에서 Photo-lithography는 특정 광원을 사용하여 구현하고자 하는 패턴을 기판상에 형성하는 기술이다. 이러한 Photo-lithography 공정에서는 패턴이 형성되어 있는 마스크가 핵심적인 역할을 하며 반도체소자의 전체적인 성능을 결정한다. 이에 따라 Photo-lithography용 마스크에 사용되는 Blank 마스크는 Defect의 최소화 및 우수한 평탄도 등의 조건들이 요구되고 있다. 이러한 Blank 마스크 재료로 광원을 효율적으로 투과시키는 성질이 우수하고 다른 재료에 비해 열팽창계수가 작은 석영기판이 사용되고 있다. 석영 기반의 마스크는 UV Lithography에서 주로 사용되고 있으며 그 밖에 UV-NIL (Nano Imrpint Lithography), EUVL (Extreme Ultra Violet Lithography) 등에도 이용되고 있다. 석영기판을 가공하여 Blank 마스크로 제작하기 위해 석영기판의 Lapping/Polishing 등이 핵심기술이며 현재 일본에서 전량 수입에 의존하고 있어, 이에 대한 연구의 필요성이 절실한 상황이다. 본 연구에서는 Blank 마스크제작을 위한 석영기판의 Polishing 공정에 사용되는 Ceria Slurry의 특성 연구 및 이에 따른 연마평가를 실시하였으며 첨가제의 조건에 따른 pH/Viscosity/Stability 등의 물리적인 특성을 관찰하여 석영기판 Polishing에 효율적인 Ceria slurry의 최적조건을 도출했다. 또한, 조건에 따른 Slurry의 정확한 분석을 위해 Zeta Potential Analyzer를 이용하여 연마입자의 크기 및 Zeta Potential에 대한 평가를 실시한 후 연마제와 석영기판의 Interaction force를 측정하였다. 상기 실험에 의해 얻어진 최적화된 연마 공정 조건하에서 Ceria slurry를 사용하여 연마평가를 실시함으로써 Removal Rate/Roughness 등의 결과를 관찰하였다. 본 연구를 통해 반도체 photo mask 제작을 위한 Ceria slurry의 주요특성을 파악하고 석영기판의 Polishing에 효율적인 조건을 도출함으로써 Lithography 마스크를 효율적으로 제작할 수 있을 것으로 예상된다.

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State of the art and technological trend for the nano-imprinting lithography equipment (나노 임프린팅 리소그래피 장비의 기술개발 동향)

  • 이재종;최기봉;정광조
    • Proceedings of the Korean Society of Precision Engineering Conference
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    • pp.196-198
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    • 2003
  • Classical lithography in semiconductor employs stepper technologies. Limits of this technology are clearly seen at structures below 100nm. Nano-imprinting lithography is a new method for generating patterns in submicron range at reasonable cost. In order to manufacture nano-imprinting lithography(NIL) equipment, several NIL manufacturers have been developing key technologies for realization of nano-imprinting process, recently. In this paper, we've been describe state-of-the-art and technology trends for nano-imprinting lithography equipments.

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A Study on the Nano-Lithography using FE-tip (FE-tip을 이용한 Nano-Lithography 기술에 관한 연구)

  • Choi, Je-Hyuk;Park, Sun-Woo;Kim, Chul-Ju
    • Proceedings of the KIEE Conference
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    • pp.1160-1163
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    • 1999
  • In this study, we developed FE-tip lithography system that could apply to multi-tip system and did lithography using FE-tip. The software that control FE-tip lithography system, was proposed for acquiring more adaptive data to compensate the effect of fluctuation. We found that the fluctuation effect was reduced. The minimum line width was related to applied voltage and we observed a movement of Z-axis piezo stage to correct the error of this system. When FE current was 5nA, scanning speed was $3{\mu}m/sec$ and applied voltage was 200V, we made a line pattern which had minimum line width of 614 nm. If we reduce applied voltage to several decades and increase scanning speed to $20{\mu}m/sec$, it is possible to set the minimum line width of 100 nm. The proposed system can be easily applied to multi FE-tip lithography system.

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21C Korean Lithography Roadmap

  • Baik, Ki-Ho;Yim, Dong-Gyu;Kim, Young-Sik
    • Proceedings of the IEEK Conference
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    • pp.269-274
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    • 1999
  • As the semiconductor industry enters the next century, we are facing to the technological changes and challenges. Optical lithography has driven by the miniaturisation of semiconductor devices and has been accompanied by an increase in wafer productivity and performance through the reduction of the IC image geometries. In the last decade, DRAM(Dynamic Random Access Memories) have been quadrupoling in level of integration every two years. Korean chip makers have been produced the memory devices, mainly DRAM, which are the driving force of IC's(Integrated Circuits) development and are the technology indicator for advanced manufacturing. Therefore, Korean chip makers have an important position to predict and lead the patterning technology. In this paper, we will be discussed the limitations of the optical lithography, such as KrF and ArF. And, post optical lithography technology, such as E-beam lithography, EUV and E-beam Projection Lithography shall be introduced.

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