• Title, Summary, Keyword: M-ICP

Search Result 507, Processing Time 0.072 seconds

Newly Designed Ion Beam Etcher with High Etch Rate

  • Cheong, Hee-Woon
    • Journal of Magnetics
    • /
    • v.20 no.4
    • /
    • pp.366-370
    • /
    • 2015
  • New ion beam etcher (IBE) using a magnetized inductively coupled plasma (M-ICP) has been developed. The magnetic flux density distributions inside the upper chamber, where the plasma is generated by inductive coupling, were successfully optimized by arranging a pair of circular coils very carefully. More importantly, the proposed M-ICP IBE exhibits higher etch rate than ICP.

The Silylation Photo Resist Process and the Enhanced-Inductively Coupled Plasma (E-ICP) (Silylation Photo resist 공정과 Enhanced-Inductively Coupled Plasma (E-ICP))

  • 정재성;박세근;오범환
    • Proceedings of the IEEK Conference
    • /
    • /
    • pp.922-925
    • /
    • 1999
  • The Silylation photo-resist etch process was tested by Enhanced-ICP dry etcher. The comparison of the two process results of micro pattern etching with 0.25${\mu}{\textrm}{m}$ CD by E-ICP and ICP reveals that E-ICP has better quality than ICP The etch rate and the microloading effect was improved in E-ICP Especially, the problem of the lateral etch was improved in E-ICP.

  • PDF

ICP와 헬리콘 플라즈마를 이용한 대면적 고밀도 플라즈마 소스 개발

  • Lee, Jin-Won;An, Sang-Hyeok;Yu, Dae-Ho;Jang, Hong-Yeong
    • Proceedings of the Korean Vacuum Society Conference
    • /
    • /
    • pp.340-340
    • /
    • 2011
  • 플라즈마 공정에서의 생산률이 플라즈마의 밀도에 비례한다는 많은 연구가 이루어진 후, 초대면적 고밀도 플라즈마 소스의 개발은 플라즈마 소스 개발에서 중요한 부분을 차지하기 시작하였다. 이로 인해, 전자 공명 플라즈마, 유도 결합 플라즈마와 헬리콘 플라즈마 등 새로운 고밀도 플라즈마 개발 연구가 활발히 진행되고 있다. 최근에는 고밀도 플라즈마 개발과 더불어, 대면적 플라즈마 소스의 개발이 플라즈마 공정 기술의 중요한 이슈가 되고 있는데, 이는 450 mm 이상의 반도체, 2 m${\times}$2 m 이상의 8세대 평판 디스플레이와 1 m${\times}$1 m 태양광 전지 생산 공정에서 플라즈마의 기술이 요구되고 있기 때문이다. 대면적 공정영역의 이러한 경향은 균일한 대면적 고밀도 플라즈마 개발을 촉진시켜왔다. 밀도가 낮은 축전 결합 플라즈마를 제외한, 대면적 공정에 적합한 고밀도 플라즈마원으로 유도 결합 플라즈마와 헬리콘 플라즈마를 선택한 후, 병렬연결 시의 특성을 알기 위하여 ICP와 헬리콘의 단일 튜브와 다수 튜브의 플라즈마 내부, 외부 변수를 측정하여 조사하였다. 두 가지 플라즈마 소스의 비교 실험을 위하여, 자기장을 제외한 모든 조건을 동등하게 한 후 실험을 하였다. 단일 헬리콘 실험을 바탕으로, 대면적 실험에 가장 적합한 자기장의 세기, 자석의 위치 및 튜브의 치수를 정한 후, fractal 구조를 위한 16개 다수 방전을 ICP와 헬리콘을 비교하였다. 병렬연결 시, RF 플라즈마에서는 같은 전압을 가져도, 안테나 디자인을 고려하지 않으면 모든 튜브의 방전이 이루어 지지 않았다. 이를 컴퓨터 모의 전사를 통해 확인하고, 가장 최적화된 안테나를 설계하여 실험을 하였다. ICP에서는 모든 튜브가 방전에 성공한 반면, 헬리콘 플라즈마는 ICP에 10배에 달하는 높은 밀도를 냈으나, 오직 4개 튜브만이 켜지고 안정적으로 방전이 이루어 지지 않았다. ICP의 경우, RF 전송선의 디자인을 통해 파워의 균등 분배가 가능하지만, 헬리콘의 경우 자기장을 추가해서 고려해야 되는 것을 확인하였다. 모든 튜브에 비슷한 자기장을 형성하기 위해서는 자석의 크기가 커지는 문제점이 있으나, 매우 낮은 압력에서 방전이 가능하고, 같은 압력에서 ICP에 비해 10배 이상 달하는 장점이 있다. 실험 결과를 바탕으로, ICP와 헬리콘 플라즈마의 다수 방전에 대한 분류를 하였고, 바로 현장에 투입이 가능한 소스로 판단된다.

  • PDF

Determination of Boron in Steels by Precipitation Method and ICP-AES (침전법과 ICP-AES법에 의한 철강 시료 중 Boron의 분석)

  • Lim, Heon-Sung;Lee, Sueg-Geun
    • Analytical Science and Technology
    • /
    • v.15 no.2
    • /
    • pp.180-183
    • /
    • 2002
  • The new useful method for the direct determination of trace boron in iron matrix was studied by applying the precipitation of $Fe(OH)_3$ and ICP-AES. Optimum pH range was 11 ~ 12.5. Linear concentration range of boron was $0.01{\sim}1.0{\mu}g/m{\ell}$ in $5000 {\mu}g/m{\ell}$ solution as iron.

The Development of Silylated Photoresist Etch Process by Enhanced- Inductively Coupled Plasma (Enhanced-Inductively Coupled Plasma (E-ICP)를 이용한 Silylated photoresist 식각공정개발)

  • 조수범;김진우;정재성;오범환;박세근;이종근
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
    • /
    • v.15 no.3
    • /
    • pp.227-232
    • /
    • 2002
  • The silylated photoresist etch process was tested by enhanced-ICP. The comparison of the two process results of micro pattern etching with $0.35\mu\textrm{m}$ CD by E-ICP and ICP reveals that I-ICP has bettor quality than ICP. The etch rate and the RIE lag effect was improved in E-ICP. Especially, the problem of the lateral etch was improved in E-ICP.

Magnetic Flux Density Distributions and Discharge Characteristics of a Newly Designed Magnetized Inductively Coupled Plasma

  • Cheong, Hee-Woon
    • Journal of Magnetics
    • /
    • v.20 no.4
    • /
    • pp.360-365
    • /
    • 2015
  • Spatial distributions of magnetic flux density in a newly designed magnetized inductively coupled plasma (M-ICP) etcher were investigated. Radial and axial magnetic flux densities as well as the magnetic flux density on the center of the substrate holder were controllable by placing multiple circular coils around the etcher properly. The plasma density non-uniformity in M-ICP (25 Gauss) can be reduced (1.4%) compared to that in ICP (16.7%) when the neutral gas pressure was 0.67 Pa and a right-hand circularly polarized wave (R-wave) can be propagated in to the etcher by making magnetic flux density increases both radially and axially from the center of the substrate holder.

Characteristics of ICP Fluorocarbon Thin Films (ICP를 이용한 불화 유기 박막의 특성 평가)

  • 차남구;박진구
    • Proceedings of the Materials Research Society of Korea Conference
    • /
    • /
    • pp.72-72
    • /
    • 2003
  • 반점착막으로 활용되고 있는 불화유기박막의 형성을 ICP를 이용하여 나노미터로 성장시키고 이를 기계적/화학적 관점에서 특성평가를 수행했다. 증착된 불차유기 박막은 알루미늄 시편위에서 110도 근처를 나타냈으며 30도 근처의 낮은 히스테리시스를 보이는 안정한 박막이 형성되었다. 극성과 비극성 용액을 사용하여 표면에너지를 검사한 결과 약 20 mN/m 이하의 낮은 표면에너지를 얻을 수 있었다. AFM을 이용한 실험결과 표면의 점착력이 약 4nN으로 매우 낮은 점착력을 가짐을 확인 할 수 있었다. FTIR 실험결과 표면에 CF$_2$ 와 같은 불화유기 그룹이 발견되었다.

  • PDF

Accuracy Evaluation by Point Cloud Data Registration Method (점군데이터 정합 방법에 따른 정확도 평가)

  • Park, Joon Kyu;Um, Dae Yong
    • Journal of the Korean Society of Surveying, Geodesy, Photogrammetry and Cartography
    • /
    • v.38 no.1
    • /
    • pp.35-41
    • /
    • 2020
  • 3D laser scanners are an effective way to quickly acquire a large amount of data about an object. Recently, it is used in various fields such as surveying, displacement measurement, 3D data generation of objects, construction of indoor spatial information, and BIM(Building Information Model). In order to utilize the point cloud data acquired through the 3D laser scanner, it is necessary to make the data acquired from many stations through a matching process into one data with a unified coordinate system. However, analytical researches on the accuracy of point cloud data according to the registration method are insufficient. In this study, we tried to analyze the accuracy of registration method of point cloud data acquired through 3D laser scanner. The point cloud data of the study area was acquired by 3D laser scanner, the point cloud data was registered by the ICP(Iterative Closest Point) method and the shape registration method through the data processing, and the accuracy was analyzed by comparing with the total station survey results. As a result of the accuracy evaluation, the ICP and the shape registration method showed 0.002m~0.005m and 0.002m~0.009m difference with the total station performance, respectively, and each registration method showed a deviation of less than 0.01m. Each registration method showed less than 0.01m of variation in the experimental results, which satisfies the 1: 1,000 digital accuracy and it is suggested that the registration of point cloud data using ICP and shape matching can be utilized for constructing spatial information. In the future, matching of point cloud data by shape registration method will contribute to productivity improvement by reducing target installation in the process of building spatial information using 3D laser scanner.

Fabrication of Superconducting Flux Flow Transistor using Plasma etching (플라즈마 식각을 이용한 초전도 자속 흐름 트랜지스터 제작)

  • 강형곤;임성훈;고석철;한윤봉;한병성
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
    • /
    • /
    • pp.74-77
    • /
    • 2002
  • The channel of the superconducting Flux Flow Transistor has been fabricated with plasma etching method using ICP. The ICP conditions were 700 W of ICP power, 150 W of rf chuck power, 5 mTorr of the pressure in chamber and 1:1 of Ar : Cl$_2$, respectively. The channel etched by plasma gas showed superconducting characteristics of over 77 K and superior surface morphology. The critical current of SFFT was altered by varying the external applied current. As the external applied current increased from 0 to 12 mA, the critical current decreased from 28 to 22 mA. Then the obtained r$\sub$m/ values were smaller than 0.1Ω at a bias current of 40 mA. The current gain was about 0.5. Output resistance was below 0.2 Ω.

  • PDF

A Reproducible High Etch Rate ICP Process for Etching of Via-Hole Grounds in 200μm Thick GaAs MMICs

  • Rawal, D.S.;Agarwal, Vanita R.;Sharma, H.S.;Sehgal, B.K.;Muralidharan, R.
    • JSTS:Journal of Semiconductor Technology and Science
    • /
    • v.8 no.3
    • /
    • pp.244-250
    • /
    • 2008
  • An inductively coupled plasma etching process to replace an existing slower rate reactive ion etching process for $60{\mu}m$ diameter via-holes using Cl2/BCl3 gases has been investigated. Process pressure and platen power were varied at a constant ICP coil power to reproduce the RIE etched $200{\mu}m$ deep via profile, at high etch rate. Desired etch profile was obtained at 40 m Torr pressure, 950 W coil power, 90W platen power with an etch rate ${\sim}4{\mu}m$/min and via etch yield >90% over a 3-inch wafer, using $24{\mu}m$ thick photoresist mask. The etch uniformity and reproducibility obtained for the process were better than 4%. The metallized via-hole dc resistance measured was ${\sim}0.5{\Omega}$ and via inductance value measured was $\sim$83 pH.