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Effects of Remanent Polarization State and Internal Field in Ferroelctric Film on the Hydrogen-induced Degradation Characteristics in Pt/Pb(Zr, Ti)O3/Pt Capacitor (강유전막의 잔류 분극 상태와 내부 전계가 Pt/Pb(Zr,Ti)O3/Pt 커패시터의 수소 열화 특성에 미치는 영향)

  • Kim, Dong-Cheon;Lee, Gang-Un;Lee, Won-Jong
    • Korean Journal of Materials Research
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    • v.12 no.1
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    • pp.75-81
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    • 2002
  • The ferroelectric properties of Pb(Zr,Ti)O$_3$[PZT] films degrade when the films with Pt top electrodes are annealed in hydrogen containing environment. This is due to the reduction activity of atomic hydrogen that is generated by the catalytic activity of the Pt top electrode. At the initial stage of hydrogen annealing, oxygen vacancies are formed by the reduction activity of hydrogen mainly at the vicinity of top Pt/PZT interface, resulting in a shift of P-E (polarization-electric field) hysteresis curve toward the negative electric field direction. As the hydrogen annealing time increases, oxygen vacancies are formed inside the PZT film by the inward diffusion of hydrogen ions, as a result, the polarization degrades significantly and the degree of P-E curve shift decreases gradually. The direction and the magnitude of the remnant polarization in the PZT film affect the motion of hydrogen ions which determines the degradation of polarization characteristics and the shift in the P-E hysteresis curve of the PZT capacitor during hydrogen annealing. When the remnant polarization is formed in the PZT film by applying a pre-poling voltage prior to hydrogen annealing, the direction of the P-E curve shift induced by hydrogen annealing is opposite to the polarity of the pre-poling voltage. The hydrogen-induced degradation behavior of the PZT capacitor is also affected by the internal field that has been generated in the PZT film by the charges located at the top interface prior to hydrogen annealing.

A Study on the Improvement of Noise Properties of the PSS-PT-PZ Pyroelectric Infrared Sensor (PSS-PT-PZ 초전형 적외선 센서의 잡음특성 개선에 관한 연구)

  • Woo, Seung-Il;Lee, Sung-Gap;Lee, Young-Hie;Park, Chang-Yub
    • Proceedings of the KIEE Conference
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    • pp.759-761
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    • 1992
  • $0.10Pb(Sb_{1/2}Sn_{1/2})O_3-0.25PbTiO_3-0.65PbZrO_3+MnO_2(0.18mol%)$, NiO(0.15mol%) temary compound ceramics won fabricated by the mixed-oxide method. Noise properties of the pyroelectric infrared sensor were investigated with particle size of the raw materials and gain size of the specimens. Particle size were decreased and sintered density, voltage resposivity were increased with increasing the ball-mill times. The specimen ball-milled for a 80[hr] showed a good pop-corn noise properties.

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A Study on the Dielectric and Pyroelectric Properties of the $Pb(Sb_{1/2}Sn_{1/2})O_3-PbTiO_3-PbZrO_3$ Ceramics ($Pb(Sb_{1/2}Sn_{1/2})O_3-PbTiO_3-PbZrO_3$ 세라믹의 유전 및 초전 특성에 관한 연구)

  • Youn, Jong-Weon;Lee, Sung-Gap;Bae, Seon-Gi;Lee, Young-Hie
    • Proceedings of the KIEE Conference
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    • pp.91-93
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    • 1989
  • x $Pb(Sb_{1/2}Sn_{1/2})O_3-PbTiO_3-PbZrO_3$, (0.05$\leq$x$\leq$0.30) ternary compound ceramics were fabricated by the mixed oxide method. The sintering temperature and time were $1200{\sim}1300[^{\circ}C]$, 2 hour, respectively. Increasing the PSS contents, the transition temperatures were decreased. The relative dielectric constant and Curie temperature of the 0.30PSS-0.20PT-0.50PZ specimens were 372, 190[$^{\circ}C$]. The pyroelectric coefficient, figure of merits for pyroelectric current and detectivity of the 0.25PSS-0.25PT-0.50PZ specimens had the good values, $5.41{\times}10^{-8}[C/cm^{2}K]$, $27.72{\times}10^{-12}[Ccm/J]$, $7.65{\times}10^{-10}{Ccm/J]$, respectively.

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Field-Induced Strain and Polarization Characteristics of La-Modified PMN-PT Ceramics (La 변성 PMN-PT계 강유전체의 전계유기변위와 분극특성)

  • Kim, Myeong-Cheol
    • Korean Journal of Materials Research
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    • v.7 no.7
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    • pp.547-558
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    • 1997
  • Pb(Mg$_{1}$3/Nb$_{2}$3)O$_{3}$[PMN]-PbTiO$_{3}$[PT]계 고용체의 상경계조성(MPB)영역에 대해 La을 첨가하여 변성시킨 La변성 (1-x)PMN-xPT(x=0.35) 고용체를 만들어 온도-유전율 특성, 전계유기 분극특성 및 변위특성을 조사하였다. PMN-PT의 상경영역의 조성인 x=0.35에 대해 La함량을 0-10at%까지 변화시켰다. PMN-PT계 고용체에서 PT 의 함량이 증가함에 따라 전계유기변위 및 히스테리시스 특성이 모두 증가하였다. 전계유기변위 값 $\varepsilon$ 는 능면정과 정방정의 공존영역인 MPB(x=0.35)조성에서 가장 높은 값($\varepsilon$ = 2 x $10^{-3}$)을 보여 주었다. MPB조성에 대해 La을 첨가한 계의 전계유기변위를 조사한 결과 La의 첨가량이 적을 때 (La=0-5at%)는 La의 함량이 증가함에 따라 히스테리시스 특성이 감소하였고 $\varepsilon$ 은 증가하여 고성능의 액튜에이터 재료에 적합한 조성물로 기대된다.

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Prepartion and Characterization of the Pt doped $TiO_2$ Membranes

  • Bae, Dong-Sik;Han, Kyong-Sop;Choi, Sang-Hael
    • The Korean Journal of Ceramics
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    • v.3 no.1
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    • pp.52-56
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    • 1997
  • The Pt doped $TiO_2$ composite membranes were prepared by the sol-gel process. The Pt doped titania sol was peptized with hydrochloric acid in the pH range of 1.23 to 1.32 at 5$0^{\circ}C$. The average particle size of the Pt doped titania sol was shown to be below 15nm and well dispersed in the solution. XPS show the Pt elements continuous and homogeneous dispersed in the $TiO_2$ membrane. The mean particle size of the Pt doped $TiO_2$ composite membrane has smaller than that of the undoped $TiO_2$ composite membrane. The average pore size of the Pt doped $TiO_2$ composite membrane was increased from 58 to 193 $\AA$ with firing temperature changed from 550 to 85$0^{\circ}C$. It was observed that the Pt doped $TiO_2$ composite membranes showed crack-free and homogeneous microstructue as well as narrow particle size distribution up to above 75$0^{\circ}C$.

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Fabrication of Vesy Thin Pb(Zr, Ti)$\textrm{O}_3$ Dielectric Films of 0.12nm $\textrm{SiO}_2$ Equivalent Thickness by ECR PECVD (ECR 플라즈마 화학기상증착법에 의한 0.12nm $\textrm{SiO}_2$ 환산두계를 갖는 Pb(Zr, Ti)$\textrm{O}_3$유전박막의제조)

  • Kim, Jae-Hwan;Kim, Yong-Il;Wi, Dang-Mun;Lee, Won-Jong
    • Korean Journal of Materials Research
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    • v.7 no.8
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    • pp.635-639
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    • 1997
  • ECR-PECVD법을 사용하여 450-49$0^{\circ}C$이하의 온도에서 Pt/SiO$_{2}$/Si기판 위에 PZT 박막을 증착하였다. 기판 온도가 46$0^{\circ}C$ 이하일 경우에는 페로브스이트 상과 제2상으로 이루어진 박막이 성장하였으며 기판온도가 47$0^{\circ}C$이상일 때에는 페로브스카이트 단일상의 PZT 박막이 성장하였다. 49$0^{\circ}C$에서 매우 얇은 페로브스카이트의 PZT 박막을 증착한 후 $650^{\circ}C$에서 1분간 raped thermal annealing(RTA) 처리한 결과 박막의 조성과 결정성에는 거의 변화가 없었으나 박막의 전하 저장 밀도는 크게 향상되었다. 이는 RTA 처리에 의한 저유전 계면층의 소멸이 주된 이유라고 판단된다. 열처리 후 두께 40-45nm의 PZT박막은 200kV/cm의 전장 하에서 $10^{-6}$$\textrm{cm}^2$이하의 누설전류값을 갖고 있었으며, 인가전압 1V에서 300fF/$\mu$$m^2$의 정전용량, 즉 SiO$_{2}$환산두께 0.12nm를 나타내었다.

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A Study on the Dielectric and Pyroelectric Properties of the PSS-PT-PZ Ceramics Added $MnO_2$ ($MnO_2$가 첨가될 PSS-PT-PZ 세라믹의 유전 및 초전특성에 관한 연구)

  • Lee, Sung-Gap;Ryu, Ki-Won;Lee, Young-Hie;Bae, Seon-Gi;Park, Chang-Yub
    • Proceedings of the KIEE Conference
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    • pp.194-197
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    • 1991
  • In this study, $(Pb_{0.99}La_{0.01})[(Sb_{1/2}Sn_{1/2})_{0.10}Ti_{0.25}Zr_{0.65}]O_3$, added $MnO_2$ (0-0.30[mol%]) ceramics were fabricated by the mixed oxide method. The sintering temperature and time were $1250[^{\circ}C]$, 2[hr], respectively. In the $(Pb_{0.99}La_{0.01})[(Sb_{1/2}Sn_{1/2})_{0.10}Ti_{0.25}Zr_{0.65}]O_3$ added $MnO_2$ (0.24[mol%]) specimens, relative dielectric constant and dielectric loss were minimum values 3.52, 0.003, respectively, and Curie temperature were highest values $256[^{\circ}C]$. Pyroelectric coefficient and voltage responsivity of the $(Pb_{0.99}La_{0.01})[(Sb_{1/2}Sn_{1/2})_{0.10}Ti_{0.25}Zr_{0.65}]O_3$, and added $MnO_2$ (0.24[mol%]) specimen were good values, $6.73{\times}10^{-8}[C/cm^2K],\;125[v/W]$, respectively. Figure of merit of pyroelectric current, voltage and detectivity of the specimen, $(Pb_{0.99}La_{0.01})[(Sb_{1/2}Sn_{1/2})_{0.10}Ti_{0.25}Zr_{0.65}]O_3$ added $MnO_2$ (0.24[mol%]) were good values $2.714{\times}10^{-8}[Ccm/J],\;7.706{\times}10^{-11}[Ccm/J],\;2.640{\times}10^{-8}[Ccm/J]$, respectively. Voltage responsivity of the $(Pb_{0.99}La_{0.01})[(Sb_{1/2}Sn_{1/2})_{0.10}Ti_{0.25}Zr_{0.65}]O_3$ added $MnO_2$ (0.24[mol%]) specimens were decreased with increasing the chopper frequency.

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The Properties of Pb(Zr,Ti)$\textrm{O}_3$ Thin Films Fabricated by 2-Step Method (2단계 증착법으로 제조된 Pb(Zr,Ti)$\textrm{O}_3$ 박막의 특성)

  • Nam, Hyo-Jin;No, Gwang-Su;Lee, Won-Jong
    • Korean Journal of Materials Research
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    • v.8 no.12
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    • pp.1152-1157
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    • 1998
  • The PZT films were deposited on the Pt/Ti/$SiO_2$/Si substrates using multi- target DC magnetron reactive sputtering. The perovskite single phase with the composition close to the stoichiometric one, was obtained even at high substrate temperature of $540^{\circ}C$ by 2-step method, which is that PZT film was deposited for a short time at low substrate temperature ($480^{\circ}C$) to promote the nucleation of perovskite phase by reducing the volatility of Pb oxide molecules, followed by the deposition at the elevated temperature to suppress the excess incorporation of Pb component in the PZT film. This two-step method, in combination with the RTA treatment, gives rise to good electrical properties of the deposited PZT films: remanent polarifaion,$18\mu$C/$\textrm{cm}^2$; coercive field, 45kV/cm; leakage current of 10$^{-4}$ A/$\textrm{cm}^2$ at high electric field of -500kV/cm.

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