• Title, Summary, Keyword: MOS-FET

Search Result 43, Processing Time 0.043 seconds

Analysis of inverter switched snubber using N-channel MOS-FET

  • Suzuki, Taiju;Ikeda, Hiroaki;Mizutani, Yoko;Ishikawa, Jinichi;Yoshida, Hirofumi
    • 제어로봇시스템학회:학술대회논문집
    • /
    • /
    • pp.207-210
    • /
    • 1996
  • This paper describes the analysis of the operation of the switched snubber in order to depress the surge voltage in the MOS-FET inverter. In this paper, the N-channel MOS-FET which operates faster than the P-channel MOS-FET was used for the inverter circuit. So, the inverter and switched snubber can operate at high-frequency in the order of MHz. The cause of generating the surge voltage in the high frequency inverter has been cleared, and then how to depress the surge voltage using the switched snubber consisting of an N-channel MOS-FET has been given. Furthermore, described is the power loss within the switched snubber which is made of an N-channel MOS-FET. The inverter having the N-channel MOS-FET used as a switched snubber can drive such a low impedance load such as mega-sonic transducer for a mega-sonic studied cleaner sufficiently.

  • PDF

DC voltage control by drive signal pulse-width control of full-bridged inverter

  • Ishikawa, Junichi;Suzuki, Taiju;Ikeda, Hiroaki;Mizutani, Yoko;Yoshida, Hirofumi
    • 제어로봇시스템학회:학술대회논문집
    • /
    • /
    • pp.255-258
    • /
    • 1996
  • This paper describes a DC voltage controller for the DC power supply which is constructed using the full-bridged MOS-FET DC-to-RF power inverter and rectifier. The full-bridged MOS-FET DC-to-RF inverter consisting of four MOSFET arrays and an output power transformer has a control function which is able to control the RF output power when the widths of the pulse voltages which are fed to four MOS-FET arrays of the fall-bridged inverter are changed using the pulse width control circuit. The power conversion efficiency of the full-bridged MOS-FET DC-to-RF power inverter was approximately 85 % when the duty cycles of the pulse voltages were changed from 30 % to 50 %. The RF output voltage from the full-bridged MOS-FET DC-to-RF inverter is fed to the rectifier circuit through the output transformer. The rectifier circuit consists of GaAs schottky diodes and filters, each of which is made of a coil and capacitors. The power conversion efficiency of the rectifier circuit was over 80 % when the duty cycles of the pulse voltages were changed from 30 % to 50 %. The output voltage of the rectifier circuit was changed from 34.7V to 37.6 V when the duty cycles of the pulse voltages were changed from 30 % to 50 %.

  • PDF

Output power maximizing in ultrasonic transducer driven at 1MHz utilizing auto-tune MOS-FET RF inverter

  • Mizutani, Yoko;Suzuki, Taiju;Ikeda Hiroaki;Yoshida, Hirofumi
    • 제어로봇시스템학회:학술대회논문집
    • /
    • /
    • pp.87-90
    • /
    • 1995
  • When the ultrasonic transducer operating at l MHz for use in cleaning semiconductor wafers or other industsrial materials is driven from the MOS-FET DC-to RF inverter, the output power severely depends on the frequency of operation since the quality factor of the transducer is high. In order to tune to the eresonating frequency of the ultrasonic transducer, the drive signal frequency of the MOS-FET power inverter is automatically scananed until the frequency is set at the resonating frequency of the ultrasonic transducer is maximized. The control circuit consists of an output power sensing circuit, a PLL controller, a frequency standard, and other peripheral circuits. The operation was satisfactory when the transducer having an output of 600 W at 1 MHz was used.

  • PDF

Efficiency Characteristics of DC-DC Boost Converter Using GaN, Cool MOS, and SiC MOSFET (GaN, Cool MOS, SiC MOSFET을 이용한 DC-DC 승압 컨버터의 효율 특성)

  • Kim, Jeong Gyu;Yang, Oh
    • Journal of the Semiconductor & Display Technology
    • /
    • v.16 no.2
    • /
    • pp.49-54
    • /
    • 2017
  • In this paper, recent researches on new and renewable energy have been conducted due to problems such as energy exhaustion and environmental pollution, and new researches on high efficiency and high speed switching are needed. Therefore, we compared the efficiency by using high speed switching devices instead of IGBT which can't be used in high speed switching. The experiment was performed theoretically by applying the same parameters of the high speed switching devices which are the Cool MOS of Infineon Co., SiC C3M of Cree, and GaN FET device of Transform, by implementing the DC-DC boost converter and measuring the actual efficiency for output power and frequency. As a result, the GaN FET showed good efficiency at all switching frequency and output power.

  • PDF

The Vertical Field Analysis within the Strong Inversion of MOS FET using the Multi-box Segmentation Technique (다중BOX분할기법을 이용한 MOS FET의 강반전층내에서의 수직전계해석)

  • 노영준;김철성
    • The Journal of Korean Institute of Communications and Information Sciences
    • /
    • v.25 no.8B
    • /
    • pp.1469-1476
    • /
    • 2000
  • We have to consider the drain current as consisting of two components the vertical electric field and the longitudinal electric field because the drain current is almost totally due to the presence of drift in strong inversion of n-MOS FET. Especially the mobility of electrons in the inversion layer is smaller than the bulk mobility because the vertical electric field component that is generated by the effect of the gate voltage is perpendicular to the direction of normal current flow. By the multi-box segmentation technical method that are proposed in this paper we calculated the inversion layer depth and analyzed the vertical electric field component which has an large influence on mobility model.

  • PDF

An analytical consideration of the MOS type field-effect transistor differential amplifier (MOS형 전계효과 트랜지스터 차동증폭기에 관한 소고)

  • 정만영
    • 전기의세계
    • /
    • v.14 no.6
    • /
    • pp.1-7
    • /
    • 1965
  • This paper provides the analysis of the differential amplifier using the insulated gate, metala-oxide-semiconductor type field-effect-transistor(MOS FET), for its active element and the power drift of the amplifer. From these analytical considerations some design standardsn were found for the MOS FET differential amplifier available for the measurement of the very small current (pico-ampare range). A differential amplifier was designed and built in the view of above considerations. Its equivalent input gate voltages of the thermal drift and the power drift were 0.57mV/.deg. C in the range 25.deg. C-60.deg. C and 8.8mV/V in the range of 20% drift of its orginal value, respectively.

  • PDF

Detection Characteristics for the Ultra Lean NOx Gas Concentration Using the MWCNT Gas Sensor Structured with MOS-FET (MOS-FET 구조의 MWCNT 가스센서를 이용한 초희박 NOx 가스 검출 특성)

  • Kim, Hyun-Soo;Lee, Seung-Hun;Jang, Kyung-Uk
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
    • /
    • v.26 no.9
    • /
    • pp.707-711
    • /
    • 2013
  • Carbon nanotubes(CNT) has strength and chemical stability, greatly conductivity characteristics. In particular, MWCNT (multi-walled carbon nanotubes) show rapidly resistance sensitive for changes in the ambient gas, and therefore they are ideal materials to gas sensor. So, we fabricated NOx gas sensors structured MOS-FET using MWCNT (multi-walled carbon nanotubes) material. We investigate the change resistance of NOx gas sensors based on MOS-FET with ultra lean NOx gas concentrations absorption. And NOx gas sensors show sensitivity on the change of gate-source voltage ($V_{gs}=0[V]$ or $V_{gs}=3.5[V]$). The gas sensors show the increase of sensitivity with increasing the temperature (largest value at $40^{\circ}C$). On the other hand, the sensitivity of sensors decreased with increasing of NOx gas concentration. In addition, We obtained the adsorption energy($U_a$), $U_a$ = 0.06714[eV] at the NOx gas concentration of 8[ppm], $U_a$ = 0.06769[eV] at 16[ppm], $U_a$ = 0.06847[eV] at 24[ppm] and $U_a$ = 0.06842[eV] at 32[ppm], of NOx gas molecules concentration on the MWCNT gas sensors surface with using the Arrhenius plots. As a result, the saturation phenomena is occurred by NOx gas injection of concentration for 32[ppm].

Abnormal Voltage Detection Circuit with Single Supply Using Threshold of MOS-FET for Power Supply Input Stage (FET 문턱전압 특징을 이용한 전원입력단용 단일전원 이상전원 검출회로)

  • Won, Joo Ho;Ko, Hyoungho
    • Journal of the Institute of Electronics and Information Engineers
    • /
    • v.53 no.11
    • /
    • pp.107-113
    • /
    • 2016
  • All circuits in power input can only use the power provided by an external power supply. General electronic circuits use a secondary supply generated by a converter using a primary power in the power input. But protection and detection circuit for over-voltage circuit or under-voltage in power input have to use that input power because there is no other supply in power input. Therefore, previous electronics for satellite can protect only over-voltage using a zener diode, and can't detect over-voltage and under-voltage events, and provide a detection capability for over-voltage and under-voltage only for secondary supply. The proposed circuit can detect over-voltage and under-voltage using a single supply for the primary power input, +28V, with the threshold characteristics for MOS-FET, and the accuracy for a detection circuit is increased by 2.5%.