• 제목, 요약, 키워드: Metal oxide chemical vapor deposition

검색결과 96건 처리시간 0.044초

Effect of the Neutral Beam Energy on Low Temperature Silicon Oxide Thin Film Grown by Neutral Beam Assisted Chemical Vapor Deposition

  • So, Hyun-Wook;Lee, Dong-Hyeok;Jang, Jin-Nyoung;Hong, Mun-Pyo
    • 한국진공학회:학술대회논문집
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    • pp.253-253
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    • 2012
  • Low temperature SiOx film process has being required for both silicon and oxide (IGZO) based low temperature thin film transistor (TFT) for application of flexible display. In recent decades, from low density and high pressure such as capacitively coupled plasma (CCP) type plasma enhanced chemical vapor deposition (PECVD) to the high density plasma and low pressure such as inductively coupled plasma (ICP) and electron cyclotron resonance (ECR) have been used to researching to obtain high quality silicon oxide (SiOx) thin film at low temperature. However, these plasma deposition devices have limitation of controllability of process condition because process parameters of plasma deposition such as RF power, working pressure and gas ratio influence each other on plasma conditions which non-leanly influence depositing thin film. In compared to these plasma deposition devices, neutral beam assisted chemical vapor deposition (NBaCVD) has advantage of independence of control parameters. The energy of neutral beam (NB) can be controlled independently of other process conditions. In this manner, we obtained NB dependent high crystallized intrinsic and doped silicon thin film at low temperature in our another papers. We examine the properties of the low temperature processed silicon oxide thin films which are fabricated by the NBaCVD. NBaCVD deposition system consists of the internal inductively coupled plasma (ICP) antenna and the reflector. Internal ICP antenna generates high density plasma and reflector generates NB by auger recombination of ions at the surface of metal reflector. During deposition of silicon oxide thin film by using the NBaCVD process with a tungsten reflector, the energetic Neutral Beam (NB) that controlled by the reflector bias believed to help surface reaction. Electrical and structural properties of the silicon oxide are changed by the reflector bias, effectively. We measured the breakdown field and structure property of the Si oxide thin film by analysis of I-V, C-V and FTIR measurement.

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저온화학기상증착에 의한 인듐산화막 구조에 관한 연구 (Structural study of indium oxide thin films by metal organic chemical vapor deposition)

  • 스리벤카트;성낙진;윤순길
    • 한국전기전자재료학회:학술대회논문집
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    • pp.47-47
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    • 2007
  • Indium oxide conducting films were dep9sited on Si(100) substrates at various temperatures by liquid delivery metal organic chemical vapor deposition using Indium (III) tris (2,2,6,6-tetramethyl-3.5-heptanedionato) $(dpm)_3$ precursors. The films deposited at $200{\sim}400^{\circ}C$ were grown with a (111) preferred orientation and exhibit an increase of grain size from 21 to 33nm with increasing deposition temperature. In the range of deposition temperature, there is no metallic indium phase in deposited films.

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Development and Application of Group IV Transition Metal Oxide Precursors

  • Kim, Da Hye;Park, Bo Keun;Jeone, Dong Ju;Kim, Chang Gyoun;Son, Seung Uk;Chung, Taek-Mo
    • 한국진공학회:학술대회논문집
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    • pp.303.2-303.2
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    • 2014
  • The oxides of group IV transition metals such as titanium, zirconium, hafnium have many important current and future application, including protective coatings, sensors and dielectric layers in thin film electroluminescent (TFEL) devices. Recently, group IV transition metal oxide films have been intensively investigated as replacements for SiO2. Due to high permittivities (k~14-25) compared with SiO2 (k~3.9), large band-gaps, large band offsets and high thermodynamic stability on silicon. Herein, we report the synthesis of new group IV transition metal complexes as useful precursors to deposit their oxide thin films using chemical vapor deposition technique. The complexes were characterized by FT-IR, 1H NMR, 13C NMR and thermogravimetric analysis (TGA). Newly synthesised compounds show high volatility and thermal stability, so we are trying to deposit metal oxide thin films using the complexes by Atomic Layer Deposition (ALD).

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Reduction of Plasma Process Induced Damage during HDP IMD Deposition

  • Kim, Sang-Yung;Lee, Woo-Sun;Seo, Yong-Jin
    • Transactions on Electrical and Electronic Materials
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    • v.3 no.3
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    • pp.14-17
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    • 2002
  • The HDP (High Density Plasma) CVD process consists of a simultaneous sputter etch and chemical vapor deposition. As CMOS process continues to scale down to sub- quarter micron technology, HDP process has been widely used fur the gap-fill of small geometry metal spacing in inter-metal dielectric process. However, HBP CVD system has some potential problems including plasma-induced damage. Plasma-induced gate oxide damage has been an increasingly important issue for integrated circuit process technology. In this paper, thin gate oxide charge damage caused by HDP deposition of inter-metal dielectric was studied. Multiple step HDP deposition process was demonstrated in this work to prevent plasma-induced damage by introducing an in-situ top SiH$_4$ unbiased liner deposition before conventional deposition.

CO Oxidation of Catalytic Filters Consisting of Ni Nanoparticles on Carbon Fiber

  • Seo, Hyun-Ook;Nam, Jong-Won;Kim, Kwang-Dae;Kim, Young-Dok;Lim, Dong-Chan
    • Bulletin of the Korean Chemical Society
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    • v.33 no.4
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    • pp.1199-1203
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    • 2012
  • Catalytic filters consisting of Ni nanoparticle and carbon fiber with different oxidation states of Ni (either metallic or oxidic) were prepared using a chemical vapor deposition process and various post-annealing steps. CO oxidation reactivity of each sample was evaluated using a batch type quartz reactor with a gas mixture of CO (500 mtorr) and $O_2$ (3 torr) at $300^{\circ}C$. Metallic and oxidic Ni showed almost the same CO oxidation reactivity. Moreover, the CO oxidation reactivity of metallic sample remained unchanged in the subsequently performed second reaction experiment. We suggested that metallic Ni transformed into oxidic state at the initial stage of the exposure to the reactant gas mixture, and Ni-oxide was catalytically active species. In addition, we found that CO oxidation reactivity of Ni-oxide surface was enhanced by increase in the $H_2O$ impurity in the reactor.

Fabrication of Thin Solid Oxide Film Fuel Cells

  • Jee, Young-Seok;Chang, Ik-Whang;Son, Ji-Won;Lee, Jong-Ho;Kang, Sang-Kyun;Cha, Suk-Won
    • 한국세라믹학회지
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    • v.47 no.1
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    • pp.82-85
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    • 2010
  • Recently, thin film processes for oxides and metal deposition, such as physical vapor deposition (PVD) and chemical vapor deposition (CVD), have been widely adapted to fabricate solid oxide fuel cells (SOFCs). In this paper, we presented two research area of the use of such techniques. Gadolinium doped ceria (GDC) showed high ionic conductivity and could guarantee operation at low temperature. But the electron conductivity at low oxygen partial pressure and the weak mechanical property have been significant problems. To solve these issues, we coated GDC electrolyte with a nano scale yittria-doped stabilized zirconium (YSZ) layer via atomic layer deposition (ALD). We expected that the thin YSZ layer could have functions of electron blocking and preventing ceria from the reduction atmosphere. Yittria-doped barium zirconium (BYZ) has several orders higher proton conductivity than oxide ion conductor as YSZ and also has relatively high chemical stability. The fabrication processes of BYZ is very sophisticated, especially the synthesis of thin-film BYZ. We discussed the detailed fabrication processes of BYZ as well as the deposition of electrode. This paper discusses possible cell structure and process flow to accommodate such films.

Chemical Vapor Deposition of Ga2O3 Thin Films on Si Substrates

  • Kim, Doo-Hyun;Yoo, Seung-Ho;Chung, Taek-Mo;An, Ki-Seok;Yoo, Hee-Soo;Kim, Yun-Soo
    • Bulletin of the Korean Chemical Society
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    • v.23 no.2
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    • pp.225-228
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    • 2002
  • Amorphous $Ga_2O_3$ films have been grown on Si(100) substrates by metal organic chemical vapor deposition (MOCVD) using gallium isopropoxide, $Ga(O^iPr)_3$, as single precursor. Deposition was carried out in the substrate temperature range 400-800 $^{\circ}C$. X-ray photoelectron spectroscopy (XPS) analysis revealed deposition of stoichiometric $Ga_2O_3$ thin films at 500-600 $^{\circ}C$. XPS depth profiling by $Ar^+$ ion sputtering indicated that carbon contamination exists mostly in the surface region with less than 3.5% content in the film. Microscopic images of the films by scanning electron microscopy (SEM) and atomic force microscopy (AFM) showed formation of grains of approximately 20-40 nm in size on the film surfaces. The root-mean-square surface roughness from an AFM image was ${\sim}10{\AA}$. The interfacial layer of the $Ga_2O_3$/Si was measured to be ${\sim}35{\AA}$ thick by cross-sectional transmission electron microscopy (TEM). From the analysis of gaseous products of the CVD reaction by gas chromatography-mass spectrometry (GC-MS), an effort was made to explain the CVD mechanism.

열화학기상증착법에 의한 고순도 탄소나노튜브의 성장 (Growth of Highly Purified Carbon Nanotubes by Thermal Chemical Vapor Deposition)

  • 유재근;박정훈;김대운;이철진;손권희;신동혁;문인기
    • 대한전기학회논문지:전기물성ㆍ응용부문C
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    • v.49 no.12
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    • pp.649-653
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    • 2000
  • We have grown carbon nanotubes by thermal chemical vapor deposition of $C_{2}H_{2}$ on catalytic metal deposited on silicon oxide substrates. Highly purified carbon nanotubes are uniformly grown on a large area of the silicon oxide substrates. It is observed that surface modification of catalytic metals deposited on substrates by either etching with dipping in a HF solution and/or $NH_{3}$ pretreatment is a crucial step for the nanotube growth prior to the reaction of $C_{2}H_{2}$ gas. The diameters of carbon naotubes could be controlled by applying the different catalytic metals.

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Direct Liquid Injection Metal Organic Chemical Vapor Deposition of $HfO_2$ Thin Films Using $Hf(dimethylaminoethoxide)_4$.

  • 송문균;강상우;이시우
    • 한국반도체및디스플레이장비학회:학술대회논문집
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    • pp.45-49
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    • 2003
  • 본 논문에서는 gate 산화막을 위한 Hf oxide 박막을 $Hf(dmae)_4$ (dmae=dimethylaminoethoxide) 전구체로 Direct Liquid Injection Metal Organic Chemical Vapor Deposition (DLI-MOCVD)방법을 이용하여 p-type Si(100) 기판 위에 증착하였다. 이 전구체를 이용하여 $150^{\circ}C$의 낮은 증착 온도에서도 낮은 carbon 농도와 roughness를 가지는 양질의 박막을 증착할 수 있었다. 증착된 박막은 비정질 구조를 나타내었지만 annealing 온도를 증가시킴에 따라서 결정성(monoclinic phase)을 나타내었다. $500{\AA}$으로 증착한 박막을 C-V 와 I-V curve를 통하여 전기적 특성을 평가하였다. 열처리 온도가 증가함에 따라 유효유전상수(k)는 증가하지만 열처리 온도가 $900^{\circ}C$ 이상이 되면 계면층의 형성에 의해 유효유전상수는 감소하게 되고 이에 따라 누설 전류도 감소하게 된다. 산소분위기 $800^{\circ}C$에서 annealing한 $HfO_2$ 박막의 유전상수는 20.1이고, 누설 전류 밀도는 SV에서 $2.2\times10^{-6}A/\textrm{cm}^2$ 로 좋은 전기적 특성을 가진다.

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