• Title, Summary, Keyword: Monolithic Microwave Integrated Circuit

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High Output Power and High Fundamental Leakage Suppression Frequency Doubler MMIC for E-Band Transceiver

  • Chang, Dong-Pil;Yom, In-Bok
    • Journal of electromagnetic engineering and science
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    • v.14 no.4
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    • pp.342-345
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    • 2014
  • An active frequency doubler monolithic microwave integrated circuit (MMIC) for E-band transceiver applications is presented in this letter. This MMIC has been fabricated in a commercial $0.1-{\mu}m$ GaAs pseudomorphic high electron mobility transistor (pHEMT) process on a 2-mil thick substrate wafer. The fabricated MMIC chip has been measured to have a high output power performance of over 13 dBm with a high fundamental leakage suppression of more than 38 dBc in the frequency range of 71 to 86 GHz under an input signal condition of 10 dBm. A microstrip coupled line is used at the output circuit of the doubler section to implement impedance matching and simultaneously enhance the fundamental leakage suppression. The fabricated chip is has a size of $2.5mm{\times}1.2mm$.

AlGaN/GaN Based Ultra-wideband 15-W High-Power Amplifier with Improved Return Loss

  • Jeong, Jin-Cheol;Jang, Dong-Pil;Shin, Dong-Hwan;Yom, In-Bok;Kim, Jae-Duk;Lee, Wang-Youg;Lee, Chang-Hoon
    • ETRI Journal
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    • v.38 no.5
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    • pp.972-980
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    • 2016
  • An ultra-wideband microwave monolithic integrated circuit high-power amplifier with excellent input and output return losses for phased array jammer applications was designed and fabricated using commercial $0.25-{\mu}m$ AlGaN/GaN technology. To improve the wideband performance, resistive matching and a shunt feedback circuit are employed. The input and output return losses were improved through a balanced design using Lange-couplers. This three-stage amplifier can achieve an average saturated output power of 15 W, and power added efficiency of 10% to 28%, in a continuous wave operation over a frequency range of 6 GHz to 18 GHz. The input and output return losses were demonstrated to be lower than -15 dB over a wide frequency range.

A fully integrated downconverter MMIC for millimeter wave applications (밀리미터파 응용을 위한 완전집적 다운컨버터 MMIC)

  • Jeon, Jang-Hyeon;Yun, Young
    • Journal of the Korean Society of Marine Engineering
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    • v.37 no.1
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    • pp.99-104
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    • 2013
  • In this paper, we developed a fully integrated downconverter MMIC (monolithic microwave integrated circuit) including Lange coupler and output active balun for millimeter wave applications. Concretely, ${\lambda}$/4 transmission line was added to Lange coupler for size reduction of RF/LO input, and mixed RF/LO signals were applied to gate of the FET of mixer. Active balun was used at output port for a coupling of out-of-phase IF output signals. According to measured results, the proposed downconverter MMIC showed good RF performances. For example, the downconverter MMIC showed an LO leakage power of -25 dBc at IF output port, and a RF-LO isolation of 18 dB. Therefore, off-chip components such as LO rejection filters were not required for a normal operation of the proposed downconverter MMIC. The proposed downconverter MMIC showed a conversion gain of 10.3 dB at RF frequency of 63 GHz. The size of the downconverter MMIC including all active and passive components was $2.2{\times}1.4mm^2$.

A Study on RF Characteristics of Transmission Line Employing Inverted Periodically Arrayed Capacitive Devices for Application to Highly Miniaturized Wireless Communication system on MMIC (MMIC 상에서 초소형 무선 통신 시스템에의 응용을 위한 반전된 형태의 주기적 용량성 구조를 이용한 전송선로의 RF 특성에 관한 연구)

  • Kim, Jeong-Hoon;Jang, Jang-Hyeon;Yun, Young
    • Journal of the Korean Society of Marine Engineering
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    • v.39 no.1
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    • pp.52-57
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    • 2015
  • In this paper, we studies on the RF characteristics of the transmission line employing IPACD (inverted periodically arrayed capacitive devices) on MMIC (monolithic microwave integrated circuit) for application to wireless communication system. According to measured results, the novel transmission line employing IPACD showed a wavelength much shorter than conventional transmission lines. In addition, the IPACD structure showed an effective permittivity much higher than conventional ones. We also extracted the bandwidth characteristic of the IPACD structure using equivalent circuit analysis. According to the results, the cut-off frequency of the proposed structure was 129.2 GHz.

A Study on Characteristics of Coupled Line Employing Periodical Ground Structure on GaAs MMIC (GaAs MMIC상에서 주기적 접지구조를 가지는 결합선로의 절연특성에 관한 연구)

  • Kim, Se-Ho;Kang, Suk-Youb;Yun, Young
    • Journal of the Korean Society of Marine Engineering
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    • v.33 no.1
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    • pp.159-165
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    • 2009
  • In this study, using a periodical ground structure(PGS) on GaAs monolithic microwave integrated circuit(MMIC), transmission line with a high isolation characteristic was developed for application to compact signal/bias lines of highly integrated MMIC. And the origin of the high isolation characteristic was theoretically investigated. The high isolation characteristic was originated from a resonance between adjacent microstrip lines employing PGS. With only a spacing of $20{\mu}m$, the coupled microstrip line employing PGS showed an isolation value of -47 dB at 60 GHz. The frequency range for high isolation was easily controlled by changing the PGS structure. Above results indicate that microstrip lines employing PGS are very useful for application to compact signal/bias lines of highly integrated MMIC requiring a high isolation characteristics between lines. In addition, equivalent circuit employing closed-form equation for the coupled line with PGS was also extracted.

A Ka-Band 6-W High Power MMIC Amplifier with High Linearity for VSAT Applications

  • Jeong, Jin-Cheol;Jang, Dong-Pil;Yom, In-Bok
    • ETRI Journal
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    • v.35 no.3
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    • pp.546-549
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    • 2013
  • A Ka-band 6-W high power microwave monolithic integrated circuit amplifier for use in a very small aperture terminal system requiring high linearity is designed and fabricated using commercial 0.15-${\mu}m$ GaAs pHEMT technology. This three-stage amplifier, with a chip size of 22.1 $mm^2$ can achieve a saturated output power of 6 W with a 21% power-added efficiency and 15-dB small signal gain over a frequency range of 28.5 GHz to 30.5 GHz. To obtain high linearity, the amplifier employs a class-A bias and demonstrates an output third-order intercept point of greater than 43.5 dBm over the above-mentioned frequency range.

A Compact C-Band 50 W AlGaN/GaN High-Power MMIC Amplifier for Radar Applications

  • Jeong, Jin-Cheol;Jang, Dong-Pil;Han, Byoung-Gon;Yom, In-Bok
    • ETRI Journal
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    • v.36 no.3
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    • pp.498-501
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    • 2014
  • A C-band 50 W high-power microwave monolithic integrated circuit amplifier for use in a phased-array radar system was designed and fabricated using commercial $0.25{\mu}m$ AlGaN/GaN technology. This two-stage amplifier can achieve a saturated output power of 50 W with higher than 35% power-added efficiency and 22 dB small-signal gain over a frequency range of 5.5 GHz to 6.2 GHz. With a compact $14.82mm^2$ chip area, an output power density of $3.2W/mm^2$ is demonstrated.

Study on Characteristics of Various RF Transmission Line Structures on PES Substrate for Application to Flexible MMIC

  • Yun, Young;Kim, Hong Seung;Jang, Nakwon
    • ETRI Journal
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    • v.36 no.1
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    • pp.106-115
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    • 2014
  • In this work, the coplanar waveguide is fabricated on a PES (poly[ether sulfone]) substrate for application to a flexible monolithic microwave integrated circuit, and its RF characteristics were thoroughly investigated. The quality factor of the coplanar waveguide on PES is 40.3 at a resonance frequency of 46.7 GHz. A fishbone-type transmission line (FTTL) structure is also fabricated on the PES substrate, and its RF characteristics are investigated. The wavelength of the FTTL on PES is 5.11 mm at 20 GHz, which is 55% of the conventional coplanar waveguide on PES. Using the FTTL, an impedance transformer is fabricated on PES. The size of the impedance transformer is $0.318mm{\times}0.318mm$, which is 69.2% of the size of the transformer fabricated by the conventional coplanar waveguide on PES. The impedance transformer showed return loss values better than -12.9 dB from 5 GHz to 50 GHz and an insertion loss better than -1.13 dB in the same frequency range.

MMIC 기술 동향

  • Kim, Dong-Gu;Park, Hyeong-Mu
    • ETRI Journal
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    • v.9 no.3
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    • pp.127-138
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    • 1987
  • 본고에서는 MMIC (Monolithic Microwave Integrated Circuit)의 연구동향을 미국을 중심으로 소개한다. MMIC의 역사, 공정, 소자, 설계, packaging, 측정에 대하여 조사함으로써 차세대 화합물반도체 MMIC개발의 앞으로의 방향을 모색하고자 한다. 본고는 미국 Microwave & RF 논문지 1987년 3월호에 게재된 R. S. Pegally와 D. Maki의 논문내용을 중심으로 편역한 것이다.

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A Study on a Meander line employing Periodic Patterned Ground Structure on GaAs MMIC (GaAs MMIC 상에서 주기적 접지구조를 가지는 미앤더 선로에 관한 연구)

  • Jung, Bo-Ra;Yun, Young
    • Journal of the Korean Society of Marine Engineering
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    • v.34 no.2
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    • pp.325-331
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    • 2010
  • In this study, highly miniaturized short-wavelength meander line employing eriodically patterned ground structure (PPGS) was developed for application to miniaturized on-chip passive component on GaAs MMIC (monolithic microwave integrated circuit). The meander line employing PPGS showed shorter wavelength and slow-wave characteristic compared with conventional meander line. The wavelength of the meander line employing PPGS structure was 17 % of the conventional meander line on GaAs MMIC. Due to its slow-wave structure, the meander line employing PPGS exhibited large propagation constant than conventional meander line, which resulted in larger phase shift and shunt inductance value. Above results indicate that the meander line employing PPGS is a promising candidate for application to a development of miniaturized on-chip RF components as well as inductor with a high inductance value on GaAs MMIC.