• Title, Summary, Keyword: Negative photoresist

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Synthesis of Acrylate Binders for Negative Photoresist (네가티브 포토레지스트용 아크릴레이트계 바인더 합성)

  • Kim, Nan-Soo;Nam, Byeong-Uk
    • Journal of the Semiconductor & Display Technology
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    • v.8 no.3
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    • pp.25-30
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    • 2009
  • In this study, we synthesized novel UV-curable binders and applied for negative photoresist of display device. First, we synthesized UV-curable binders by radical polymerization with a mixture of Styrene/Methyl methacrylate/Methacrylic acid/Glycidyl methacrylate/N-Cyclohexylmaleimide at a fixed composition. Following the first step, we prepared a negative photoresist mixture optimized with photo sensitive initiator and others for the litho test. And then, we studied resolution and film retention with molecular weight of each binders and numerical value of Alkaline Desolution Rate(ADR). As a result of the litho test, we found that if the novel polymers have same numerical value of ADR, the resolution decreased and the film retention increased with the increasing of molecular weight of photoresist binder.

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Synthesis of Imide Monomers for Application to Organic Photosensitive Interdielectric Layer

  • Kwon, Hyeok-Yong;Vu, Quang Hung;Lee, Yun-Soo;Park, Lee-Soon
    • 한국정보디스플레이학회:학술대회논문집
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    • pp.816-819
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    • 2008
  • A negative photoresist formulation was developed utilizing synthesized UV monomers containing imide linkage, photoinitiator, UV oligomer, and alkali developable polymer matrix. It was found that via-holes with good resolution, high transmittance and thermal resistance could be obtained by photolithographic process utilizing the negative-type photoresist formulations.

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The Characteristics of Photoresist using Inorganic $a-Se_{75}Ge_{25}$ (무기질 $a-Se_{75}Ge_{25}$ 을 이용한 포토레지스트의 특성)

  • Chung, Hong-Bay;Huh, Hun;Kim, Tae-Wan;Hoon, Hyuk;Song, Joon-Suk;Kim, Jong-Been
    • Proceedings of the KIEE Conference
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    • pp.197-199
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    • 1987
  • This paper is investigated on characteristics of photoresist using inorganic a-$Se_{75}Ge_{25}$. The sensitivity of negative photoresist showing insolubility against alkalie solution, with Ag-photodoped, is more prominent than that of positive photoresist used with only a-$Se_{75}Ge_{25}$. It is also showed that the contrast of negative photoresist, ${\gamma}=2.9$, is more prominent than that of positive photoresist, ${\gamma}=1.4$.

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Preparation and Properties of Water-Soluble Photosensitive Polymer with Azido Group (Azido기를 함유한 수용성 포토레지스트 제조 및 감광 특성)

  • Yoon, Keun-Byoung;Lee, Joon-Tae;Han, Jeong-Yeop;Lee, Dong-Ho
    • Polymer Korea
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    • v.31 no.5
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    • pp.374-378
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    • 2007
  • Water-soluble terpolymer of acrylamide, diacetone acrylamide, and acrylic acid was prepared by redox initiators in aqueous medium. One component photoresist was synthesized by reaction of terpolymer with 4-azidoaniline. By blending the aqueous acrylamide/diacetone acrylamide copolymer solution with bisazide, 4,4'-diazidostilbene -2,2'-disulfuric acid sodium salt, two component photoresist was prepared. The photosensitivity per azido group unit mole of one component photoresist was 4 times higher than that of two component photoresist. The dot-type pattern was successfully achieved with one component photoresist at low exposure energy, which is prospective to be used as black matrix negative photoresist.

Very Fine Photoresist Pattern Formation using Double Exposure of Optical Wafer Stepper (Optical Stepper의 이중노광에 의한 미세한 포토레지스트 패턴의 형성)

  • 양전욱;김봉렬;박철순;박형무
    • Journal of the Korean Institute of Telematics and Electronics A
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    • v.31A no.7
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    • pp.69-75
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    • 1994
  • A very fine pattern formation process using double exposure is investigated, which can overcome the resolution limit of optical wafer stepper. The very fine pattern can be obtained by moving the edge profile of large pattern by means of moving the stepper stage. The simulation results show that the light transmittance decrease bellow 9%, and the contrast increase to 16.6% for the 0.3$\mu$m photoresist pattern exposeed by the double exposure using i-line wafer stepper. And the experimental results show that fine photoresist pattern as short as 0.2$\mu$m can be obtained without a loss of photoresist thickness. Also, it proves that the depth of focus for 0.3$\mu$m pattern is longer than $1.5\mu$m. And, the very fine negative photoresist pattern was formmed by using the double exposure technique and the image reversal process.

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Preparation of photoresist-derived carbon micropatterns by proton ion beam lithography and pyrolysis

  • Nam, Hui-Gyun;Jung, Jin-Mook;Hwang, In-Tae;Shin, Junhwa;Jung, Chang-Hee;Choi, Jae-Hak
    • Carbon letters
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    • v.24
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    • pp.55-61
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    • 2017
  • Carbon micropatterns (CMs) were fabricated from a negative-type SU-8 photoresist by proton ion beam lithography and pyrolysis. Well-defined negative-type SU-8 micropatterns were formed by proton ion beam lithography at the optimized fluence of $1{\times}10^{15}ions\;cm^{-2}$ and then pyrolyzed to form CMs. The crosslinked network structures formed by proton irradiation were converted to pseudo-graphitic structures by pyrolysis. The fabricated CMs showed a good electrical conductivity of $1.58{\times}10^2S\;cm^{-1}$ and a very low surface roughness.

Characterization of Negative Photoresist Processing by Statistical Design of Experiment (DOE)

  • Mun Sei-Young;Kim Gwang-Beom;Soh Dea-Wha;Hong Sang Jeen
    • Journal of information and communication convergence engineering
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    • v.3 no.4
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    • pp.191-194
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    • 2005
  • SU-8 is a epoxy based photoresist designed for MEMS applications, where a thick, chemically and thermally stable image are desired. However SU-8 has proven to be very sensitive to variation in processing variables and hence difficult to use in the fabrication of useful structures. In this paper, negative SU-8 photoresist processed has been characterized in terms of delamination, based on a full factorial designed experiment. Employing the design of experiment (DOE), a process parameter is established, and analyzing of full factorial design is generated to investigate degree of delamination associated with three process parameters: post exposure bake (PEB) temperature, PEB time, and exposure energy. These results identify acceptable ranges of the three process variables to avoid delamination of SU-8 film, which in turn might lead to potential defects in MEMS device fabrication.

Synthesis and characterization of negative-type photosensitive polyimides for TFT-LCD array

  • Kim, Hyo-Jin;Kim, Hyun-Suk;Kim, Soon-Hak;Park, Lee-Soon;Hur, Young-Hune;Lee, Yoon-Soo;Song, Gab-Deuk;Kwon, Young-Hwan
    • 한국정보디스플레이학회:학술대회논문집
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    • pp.1625-1628
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    • 2006
  • Two different negative-type photosensitive polyimides were synthesized and characterized for an application as an interdielectric layer in TFTLCD array. In the case of photocurable polyimides, the photosensitive moiety, 2-HHSP, was synthesized through 3 step reaction, and then was incorporated into side chains of polyimide precursor by post reaction. Optimum compositions of negative-type photocurable polyimde were also formulated. For photopolymerizable polyimides, two novel UV monomers containing imide linkages were prepared. An aqueous alkaline developable polymer matrix was synthesized by free radical copolymerization. A negative photoresist formulation was developed utilizing synthesized UV monomers containing imide linkage, photoinitiator, UV oligomer, and alkali developable polymer matrix. It was found that viaholes with good resolution, high transmittance and thermal resistance could be obtained by photolithographic process utilizing the negative-type photoresist formulations.

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Fabrication of $100{\mu}m$ High Metallic Structure Using Negative Thick Photoresist and Electroplating (Negative Thick Photoresist를 이용한 $100{\mu}m$ 높이의 금속 구조물의 제작에 관한 연구)

  • Chang, Hyun-Kee;Kim, Yong-Kweon
    • Proceedings of the KIEE Conference
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    • pp.2541-2543
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    • 1998
  • This paper describes the fabrication process to fabricate metallic structure of high aspect ratio using LlGA-like process. SU-8 is used as an electroplating mold. SU-8 is an epoxy-based photoresist, designed for ultrathick PR structure with single layer coating [1,2]. We can get more than $100{\mu}m$ thick layer by single coating with conventional spin coater, and applying multiple coating can make thicker layers. In the experiments, we used different kinds of SU-8, having different viscosity. To optimize the conditions for mold fabrication process, experiments are performed varying spinning time and speed, soft-bake, develop and PEB (Post Expose Bake) condition. With the optimized condition, minimum line and space of $3{\mu}m$ pattern with a thickness of $40{\mu}m$ and $4{\mu}m$ pattern with a thickness of $130{\mu}m$ were obtained. Using the patterned PR as a plating mold, metallic structure was fabricated by electroplating. We have fabricated a electroplated nickel comb actuator using SU-8 as plating mold. The thickness of PR mold is $45{\mu}m$ and that of plated nickel is$40{\mu}m$. Minimum line of the mold is $5{\mu}m$. Patterned metallic layer or polymer layer, which has selectivity with the structural plated metallic layer, can be used as sacrificial layer for fabrication of free-standing structure.

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