• Title, Summary, Keyword: Photoacid

Search Result 15, Processing Time 0.041 seconds

Technology Trends for Photoresist and Research on Photo Acid Generator for Chemical Amplified Photoresist (포토 레지스트의 기술 동향과 화학 증폭형 포토레지스트에서의 광산 발생제의 연구)

  • Kim, Sung-Hoon;Kim, Sang-Tae
    • Journal of the Chosun Natural Science
    • /
    • v.2 no.4
    • /
    • pp.252-264
    • /
    • 2009
  • Lithographic data obtained from PHS(polyhydroxy styrene) having various functionalities were investigated by using a photoacid generator based on diazo and onium type. Chemically amplified photoresist based on the KrF type photoresist was developed by using a photoacid generator and multi-functional resin. Thermal stability for the photoacid generator showed that the increase of loading amount of photoacid generator resulted in the decrease of glass transintion temperature (Tg). The photoacid generators having methyl, ethyl, or propyl group in their cationic structure produced T-top structure in pattern profile due to the effect of acid diffusion during the generation of acid in the resist. The increase of carbon chain length in the anionic structure of photoacid generators resulted in lower pattern resolution due to the interruption of acid diffusion.

  • PDF

Photoacid Catalyzed Reaction of Phenol with Styrene

  • Kim, Vicna;Shin, Eun Ju;Chung, Minchul;Ahn, Hogeun;Kwak, Wonbong
    • Rapid Communication in Photoscience
    • /
    • v.5 no.1
    • /
    • pp.13-15
    • /
    • 2016
  • The reaction of styrene with phenol using photoacid catalyst has been investigated. Upon irradiation with 450 nm light, protonated merocyanine photoacid converts into spiropyran form with releasing proton. The reaction of styrene with phenol has been conducted under irradiation with 450 nm light using merocyanine photoacid catalyst at room temperature in comparison with the results using some selected catalysts including $H_2SO_4$ or $FeCl_3$ at the reaction temperature of $120^{\circ}C$.

Photo-Crosslinking of Poly(glycidyl methacrylate) Initiated by N-Hydroxyphthalimide Sulfonates

  • Kyu Ho Chae;Ik Ju Park;Min Ho Choi
    • Bulletin of the Korean Chemical Society
    • /
    • v.14 no.5
    • /
    • pp.614-618
    • /
    • 1993
  • The photoacid generation efficiency of four N-hydroxyphthalimide sulfonate derivatives was studied by photo-crosslinking reaction of poly(glycidyl methacrylate) in solid film state. The relative photoacid generation efficiency was increased in the order of N-hydroxyphthalimide methanesulfonate > -toluenesulfonate > -nitrobenzenesulfonate > -dinitrobenzensulfonate, and the reaction was efficiently sensitized by benzophenone suggesting that this photoreactions is likely to proceed through its triplet excited state.

  • PDF

Preparation and Characterization of p-Styrenesulfonates of Isopropylidene Dicyclohexanol as Acid Amplifiers to Enhance the Photosensitivity of Positive-Working Photoresists (포지티브 포토레지스트의 감도 증진을 위한 산 증식제로 이소프로필리덴 디시클로헥산올의 p-스티렌술폰산 에스테르의 합성 및 특성연구)

  • Lee, Eun-Ju;Hong, Kyong-Il;Lim, Kwon-Taek;Jeong, Yong-Seok;Hong, Sung-Su;Jeong, Yeon-Tae
    • Journal of the Korean Chemical Society
    • /
    • v.46 no.5
    • /
    • pp.437-471
    • /
    • 2002
  • The photosensitivity enhancement of photoresist achieved by the addition of acid amplifiers stems from the autocatalytic decomposition of the acid amplifiers triggered by acidic species generated from a photoacid gen-erator. In this research we synthesized and evaluated 4-hydroxy-4'-p-styrenesulfonyloxy isopropylidene dicyclohex-ane(1), 4,4'-di-p-styrenesulfonyloxy isopropylidene dicyclohexane(2) and 4-p-styrenesulfonyloxy-4'-tosyloxy isopropylidene dicyclohexane(3) as novel acid amplifiers. These acid amplifiers(1-3) showed reasonable thermal stability for resist pro-cessing temperature. As estimated by the sensitivity curve, 1-3 were 2X-12X sensitive than poly(tert-butyl meth-acrylate) film in the presence of a photoacid generator and, therefore, provides practical applicability for photoimaging.

Near-field Optical Lithography for High-aspect-ratio Patterning by Using Electric Field Enhanced Postexposure Baking (전기장이 적용된 노광후굽기 공정에 의한 고종횡비 근접장 광 리소그래피)

  • Kim, Seok;Jang, Jin-Hee;Kim, Yong-Woo;Jung, Ho-Won;Hahn, Jae-Won
    • Korean Journal of Optics and Photonics
    • /
    • v.21 no.6
    • /
    • pp.241-246
    • /
    • 2010
  • In this paper, we propose an electric field enhanced postexposure baking (EFE-PEB) method to obtain deep and high aspect ratio pattern profile in near-field recording. To describe the photoacid distribution under an external electric field during the PEB, we derived the governing equations based on Fick's second law of diffusion. From the results of the numerical calculations, it is found that the vertical movement of photoacid increases while the lateral movement is stationary as electric field varies from 0 to $8.0{\times}10^6\;V/m$. Also, it is proven that the profile of near-field recording is improved by using the EFE-PEB method with increased depth, higher aspect ratio and larger sidewall angle.

p-Toluenesulfonate Ester Derivatives of Benzendiol as Novel Acid Amplifiers (새로운 산증식제로 벤젠다이올의 p-톨루엔술폰산 에스터 유도체에 관한 연구)

  • Kang, Ji Eun;Hong, Kyoun Il;Lim, Kwon Taek;Jeong, Yeon Tae
    • Applied Chemistry for Engineering
    • /
    • v.16 no.5
    • /
    • pp.660-663
    • /
    • 2005
  • Aiming the development of novel acid amplifiers, 2-hydroxyphenyl-4-methylbenzenesulfonate (1), 3-hydroxyphenyl-4-methylbenzene sulfonate (2), 4-hydroxyphenyl-4-methylbenzenesulfonate (3) were synthesized as the aromatic acid amplifiers with good thermal stability. They were autocatalytically generated p-toluenesulfonic acid in the presence of small amount of acid evolved from a photoacid generator. These aromatic sulfonates showed excellent thermal stability in PtBMA film and were proven to be the first aromatic acid amplifier to act as a photosensitivity enhancer. When these compounds were coupled with a chemically amplified photoresist system, photosensitivity was enhanced up to 3~6 folds.

Deep UV Photoresists;Dissolution Inhibitor

  • Shim, Sang-Yeon;Crivello, James V.
    • Journal of the Korean Applied Science and Technology
    • /
    • v.17 no.3
    • /
    • pp.188-191
    • /
    • 2000
  • A new class of deep UV Photoresist based on the principles of chemical amplification was developed. This photoresist consists of three basic elements: a copolymer, blocked tetrabromobisphenol-A as a dissolution inhibitor and a photosensitive onium salt as a photoacid generator. On irradiation followed by a post exposure bake, tert-butoxycarbonyloxy phenyl group is converted to phenol group. Thus the initially base insoluble resin is converted under UV irradiation to a base soluble resin which may be preferentially removed by dissolution. This new photoresist display high sensitivity, 10 $mJ/cm^{2}$.

Patterned Fluorescence Images with a t-Boc-Protected Coumarin Derivative

  • Min Sung-Jun;Park Bum Jun;Kim Jong-Man
    • Macromolecular Research
    • /
    • v.12 no.6
    • /
    • pp.615-617
    • /
    • 2004
  • We have developed an efficient method for the generation of patterned fluorescence images using a protected precursor molecule. The t-Boc-protecting group of a coumarin derivative was readily removed from a polymer film upon irradiation with UV light in the presence of a photoacid generator to provide the original properties of the coumarin. Fine fluorescence patterns were obtained when using this photolithographic method.

Post Exposure Delay Effect Modeling and Simulation in Chemically Amplified Resists (화학증폭형 감광제의 노광후 지연 효과에 대한 모델링 및 시뮬레이션)

  • 김상곤;손동수;박흥진;손영수;오혜근
    • Proceedings of the Optical Society of Korea Conference
    • /
    • /
    • pp.78-79
    • /
    • 2001
  • 노광 후 지연(Post Exposure Delay: PED) 효과는 그림 1과 같이 노광 후 지연 시간에 따른 감광제의 Profile에 thinning, T-top, foot, undercut 를 보여주는 현상으로 화학 증폭형 감광제(Chemically Amplified Resist, CAR) 개발에 있어 PED의 안정성은 중요한 요소이다(1). 따라서 노광후 지연 효과에 대한 모델링은 연구와 개발을 위한 시뮬레이션 tool에 있어 매우 의미 있는 일이다. T-top 이나 undercut 를 형성하는 Surface inhibition layer(SIL) 은 노광 후 지연시 발생되는 environmental base contamination, acid evaporation 이 주요 원인이며 다른 원인으로는 감광제 속에서 acid migration, spin coating 동안에 photoacid generator (PAG)의 고갈, internal basic impurities 이며 그 외에 nonbsic atmospheric contamination, high power laser source의 영향 등이 있다. (중략)

  • PDF

Preparation and Characterization of Acid Amplifiers containing electron withdrawing group (전자끄는기를 갖는 산 증식제의 합성 및 특성 연구)

  • Lee, Eun-Ju;Jeong, Yeon-Tae
    • Journal of the Korean Printing Society
    • /
    • v.21 no.1
    • /
    • pp.21-34
    • /
    • 2003
  • Acid amplifiers derived from a certain class of sulfonates suffer from autocatalytic decomposition in the presence of a strong acid to give corresponding sulfonic acid, which catalyze the composition of the parent sulfonates, leading to the liberation of more of the same sulfonic acids in an exponential manner. In this research we synthesized and evaluated 4-hydroxy-4'-(2-trifluoromethyl)benzenesulfonyloxy isopropylidene dicyclohexane (1), 4,4'-di-(2-trifluoromethyl)benzenesulfonyloxy isopropylidene dicyclohexane (2), 4-hydroxy-4'-(3-trifluoromethyl)benzenesulfonyloxy isopropylidene dicyclohexane (3) and 4,4-di-(3-trifluoromethyl)benzenesulfonyloxy isopropylidene dicyclohexane (4) as novel acid amplifiers with electron withdrawing group. These acid amplifiers (1-4) showed reasonable thermal stability for resist processing temeprature and exhibited higher photosensitivity compared to poly(tert-butyl methacrylate) film without acid amplifiers. Application of acid amplifiers to photofunctional materials, including photoresists, are described as a consequence of the combination of the acid amplifiers with photoacid generator.

  • PDF