• Title, Summary, Keyword: Photoresist

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A free standing metal structures for MEMS switches (MEMS switch 응용을 위한 free standing 금속 구조물에 관한 연구)

  • Hwang, Hyun-Suk;Kim, Eung-Kwon;Kang, Hyun-Il;Lee, Kyu-Il;Lee, Tae-Yong;Song, Joon-Tae
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • pp.187-188
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    • 2005
  • In this paper, big free standing metal structures for electrostatic MEMS switches are easily fabricated using photoresist sacrificial layer. The entire process sequence, through the removal of the sacrificial layer, is kept below 150 $^{\circ}C$ to avoid curing problem of photoresist sacrificial layer. Metal structure is fabricated by thermal evaporator and a self test electrode is fabricated underlying metal suspended structure for testing by electrostatic force. The new wet release process is considered using methanol rinse, general wet release process cause stiction problem by capillary force during drying, and the yield is dramatically improved than previous wet release process using DI water rinse. The fabrication becomes much simpler and cheaper with use of a photoresist sacrificial layer.

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Formation of Fine Pitch Solder Bumps on Polytetrafluoroethylene Printed Circuit Board using Dry Film Photoresist (Dry Film Photoresist를 이용한 테프론 PCB 위 미세 피치 솔더 범프 형성)

  • 이정섭;주건모;전덕영
    • Journal of the Microelectronics and Packaging Society
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    • v.11 no.1
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    • pp.21-28
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    • 2004
  • We have demonstrated the applicability of dry film photoresist (DFR) in photolithography process for fine pitch solder bumping on the polytetrafluoroethylene (PTFE/Teflon ) printed circuit board (PCB). The copper lines were formed with 100$\mu\textrm{m}$ width and 18$\mu\textrm{m}$ thickness on the PTFE test board, and varying the gaps between two copper lines in a range of 100-200$\mu\textrm{m}$. The DFRs of 15$\mu\textrm{m}$ thickness were laminated by hot roll laminator, by varying laminating temperature from $100{\circ}C$ to 15$0^{\circ}C$ and laminating speed from 0.28-0.98cm/s. We have found the optimum process of DFR lamination on PTFE PCB and accomplished the formation of indium solder bumps. The optimum lamination condition was temperature of $150^{\circ}C$ and speed of about 0.63cm/s. And the smallest size of indium solder bump was diameter of 50$\mu\textrm{m}$ with pitch of 100$\mu\textrm{m}$.

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Prediction of Residual Layer Thickness of Large-area UV Imprinting Process (대면적 UV 임프린팅 공정에서 잔류층 두께 예측)

  • Kim, Kug Weon
    • Journal of the Semiconductor & Display Technology
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    • v.12 no.2
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    • pp.79-84
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    • 2013
  • Nanoimprint lithography (NIL) is the next generation photolithography process in which the photoresist is dispensed onto the substrate in its liquid form and then imprinted and cured into a desired pattern instead of using traditional optical system. There have been considerable attentions on NIL due to its potential abilities that enable cost-effective and high-throughput nanofabrication to the display device and semiconductor industry. Although one of the current major research trends of NIL is large-area patterning, the technical difficulties to keep the uniformity of the residual layer become severer as the imprinting area increases more and more. In this paper, with the rolling type imprinting process, a mold, placed upon the $2^{nd}$ generation TFT-LCD glass sized substrate($370{\times}470mm^2$), is rolled by a rubber roller to achieve a uniform residual layer. The prediction of residual layer thickness of the photoresist by rolling of the rubber roller is crucial to design the rolling type imprinting process, determine the rubber roller operation conditions-mpressing force & feeding speed, operate smoothly the following etching process, and so forth. First, using the elasticity theory of contact problem and the empirical equation of rubber hardness, the contact length between rubber roller and mold is calculated with consideration of the shape and hardness of rubber roller and the pressing force to rubber roller. Next, using the squeeze flow theory to photoresist flow, the residual layer thickness of the photoresist is calculated with information of the viscosity and initial layer thickness of photoresist, the shape of mold pattern, feeding speed of rubber roller, and the contact length between rubber roller and mold previously calculated. Last, the effects of rubber roller operation conditions, impressing force & feeding speed, on the residual layer thickness are analyzed with consideration of the shape and hardness of rubber roller.

Maskless patterning of Photoresist by laser (레이저에 의한 포토레지스트의 마스크리스 페터닝)

  • Lee, Kyoung-Cheol;Kim, Jae-Kwan;Lee, Cheon;Choi, Jin-Ho;Lee, Kang-Ook;Choi, Ik-Soon
    • Proceedings of the KIEE Conference
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    • pp.886-888
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    • 1998
  • By irradiating photoresist on Si or glass with $Ar^+$ (${\lambda}$=514 nm, CW) and Nd:YAG (${\lambda}$=266 and 532nm, pulse) laser beam, the photoresist was etched masklessly in air. Using a fourth harmonic Nd:YAG laser beam, the etching threshold of energy fluence was $25\;J/cm^2$ and the damage of substrate was appeared over $40\;J/cm^2$.

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Preparation of the Polymers Containing Phenylamide and Dimethylaminoethyl Groups and their Properties as a Nagative Photoresist

  • Chae, Kyu-Ho;Kang, Jin-Koo;Kim, Su-Kyung;Chough, Sung-Hyo
    • Journal of Photoscience
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    • v.7 no.2
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    • pp.47-52
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    • 2000
  • The copolymmers of N, N-dimethylaminoethyl methacrylate(DAEM) and N-arylmethacrylamide (AMA) were prepared, and their photochemical properties as a negative photoresist were studied by the measurements of insoluble fraction, and by UV and IR absorption spectral changes. These copolymers are soluble in DMF, actone, methanol, of acidic buffer solutions. Solubility of these copolymer films in the vuffer solutions increased with the amount of DAEM units in the copolymer and decreased with the pH value. The insoluble fraction of the copolymer films in the buffer solution of pH 4 of in methanol increased with irradiation time and the amount of AMA units in the copolymer. UV and IR spectral changes indicated that not only photo-crosslinking but also the photo-Fries rearrangement took place upon irradiation with a 254nm UV light.

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Synthesis and Photocharacteristics of Trihydric Phenol Photoresist (Trihydric Phenol계 Photoresist의 합성과 그 감광 특성)

  • Hong, Eui-Suk;Ko, Jae-Yong;Park, Hong-Soo
    • Journal of the Korean Applied Science and Technology
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    • v.13 no.1
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    • pp.47-54
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    • 1996
  • Cinnamoyl ester(PGEFC) of poly(phloroglucinol-formaldehyde) glycidyl ether which has photosensitive functional group was prepared to apply to photoresist. Photosensitivity of PGEFC was estimated by the solubility difference in organic solvent before and after exposure to light. The yield of residual film was calculated by immersing the sample-coated quartz plates in the solvent which was used in coating. The yield of the residual film which was closely related to the sensitivity of the film, was affected by the degree of polymerization of the backbone resin, sensitizers and their concentration. The sensitivity was depended upon the degree of polymerization. Most of effective sensitizer for PGEFC among the sensitizers was 2, 6-dichloro-4-nitroaniline.

($TruNano^{TM}$ processing of color photoresist for the flexible LCD module

  • Lee, Michael M.S.;Moon, Byung-Chun;Bae, Byung-Seong;Kim, Woo-Young;Kim, Nam-Hoon;Cheon, Chae-Il;Kim, Jeong-Seog
    • 한국정보디스플레이학회:학술대회논문집
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    • pp.443-444
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    • 2006
  • We present a low temperature thermal process for the color photoresist on the flexible substrate for the LCD color filter module by the $TruNano^{TM}$ processor in combination with a compositional modification to the conventional color photoresist. By this method the curing temperature can be lowered by more than $100^{\circ}C$, and the curing process time also can be shortening by more than 20 min.

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High Efficiency Photoresist Strip Technology by using the Ozone/Napor Mixture (오존/증기 혼합물을 이용한 고효율 반도체 감광막 제거기술)

  • Son, Young-Su;Ham, Sang-Yong
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • pp.22-23
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    • 2006
  • A process for removal of photoresist(PR) m semiconductor manufacturing using water vapor with ozone is presented. For the realization of the ozone/vapor mixture process, high concentration ozone generator and process facilities have developed. As a result of the silicon wafer PR strip test, we confirmed the high efficiency PR strip rates of 400nm/mm or more at the ozone concentration of 16wt%/$O_2$. The ozone/vapor mixture process is more effective than the ozonized water Immersion process.

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Preparation of photoresist-derived carbon micropatterns by proton ion beam lithography and pyrolysis

  • Nam, Hui-Gyun;Jung, Jin-Mook;Hwang, In-Tae;Shin, Junhwa;Jung, Chang-Hee;Choi, Jae-Hak
    • Carbon letters
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    • v.24
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    • pp.55-61
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    • 2017
  • Carbon micropatterns (CMs) were fabricated from a negative-type SU-8 photoresist by proton ion beam lithography and pyrolysis. Well-defined negative-type SU-8 micropatterns were formed by proton ion beam lithography at the optimized fluence of $1{\times}10^{15}ions\;cm^{-2}$ and then pyrolyzed to form CMs. The crosslinked network structures formed by proton irradiation were converted to pseudo-graphitic structures by pyrolysis. The fabricated CMs showed a good electrical conductivity of $1.58{\times}10^2S\;cm^{-1}$ and a very low surface roughness.

Polymer Photonic Crystals Using Laser Holography Lithography (레이저 홀로그래피법을 이용한 폴리머 광결정의 패턴형성 기술)

  • 장원석;문준혁;양승만
    • Proceedings of the Korean Society of Precision Engineering Conference
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    • pp.123-126
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    • 2004
  • We have demonstrated the fabrication of patterned 3D photonic crystals by holographic lithography in conjunction with soft lithography. Holographic lithography created 3D ordered macroporous structures and soft lithography made tailored defects. Because the hard baked photoresist pattern possessed high resistance against the uncured photoresist solution and the refractive index did not change appreciably by hard baking, a crosslinked photoresist was used as a relief pattern for the holographic fabrication of patterned 3D photonic crystals. More complicated defect geometries might be easily obtained with more complicated patterns on PDMS stamps. Moreover, the present results might be used as templates for 3D PCs of highindex defects that can be exploited as optical waveguides and optical circuits.

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