• 제목, 요약, 키워드: Photoresist

검색결과 417건 처리시간 0.04초

인쇄 제판용 Photoresist의 합성과 G.S법에 의한 감광특성 비교;인쇄 제판용 Photoresist의 연구[II] (Synthesis and Photosensitive Characterization Comparison by Gray Scale of Photoresist for Printing Plate;Study of the Photoresist for Printing Plate[II])

  • 이기창
    • 한국응용과학기술학회지
    • /
    • v.14 no.2
    • /
    • pp.27-34
    • /
    • 1997
  • Naphthoquinone-1,2-diazide-5-sulfonyl [NDS]derivatives members of Quinone diazide compound that are utilizable as photoresist for printing plate were synthesized, and photoresist were prepared by mixing these derivatives with a matrix resin(PF, CF) at various weight ratios. Photosensitive characteristics of photoresist were studied by Gray scale method, and SEM to analyze if they can be used as photosensitive material in a printing plate. Experimental results showed using IR, UV, NDS derivatives were photoconverted and developer-soluble photoresist were produced. Photoresist in the mixing ratio of 1:4 of NDS[II] and CF resin gave rise to the highest dissolution rate. In addition, photoresist obtained at this condition resulted in the most superior sensitivity.

SU-8 PR을 이용한 마이크로 구조물 제작 공정 개발 (A development of fabrication processes of microstructure using SU-8 PR)

  • 김창교;장석원;노일호
    • 한국결정성장학회지
    • /
    • v.13 no.2
    • /
    • pp.68-72
    • /
    • 2003
  • 본 논문에서는 3차원 마이크로구조물을 위한 새로운 UV-LIGA 공정을 개발하였다. 일반적으로 photoresist는 얇은 두께로 코팅이 되지만, SU-8은 수십 $\mu\textrm{m}$ 이상의 두께를 가질 수 있으며, 높은 형상비를 갖는다. SU-8과 같은 Thick photoresist는 기존의 baking 공정과 같이 급격한 cool down을 할 경우 stress에 의한 crack이 발생한다. 이와 같은 경우 도금을 위한 마이크로구조물이 구현이 되지 않는다. SU-8의 코팅, bake에서의 시간 조절, 그리고 PEB의 시간 조절 및 cool down조절을 통하여 stress에 의한 crack이 발생하지 않도록 3차원 마이크로구조물을 제작 할 수 있도록 하였다.

무기질 $a-Se_{75}Ge_{25}$ 을 이용한 포토레지스트의 특성 (The Characteristics of Photoresist using Inorganic $a-Se_{75}Ge_{25}$)

  • 정홍배;허훈;김태완;문혁;송준석;김종빈
    • 대한전기학회:학술대회논문집
    • /
    • /
    • pp.197-199
    • /
    • 1987
  • This paper is investigated on characteristics of photoresist using inorganic a-$Se_{75}Ge_{25}$. The sensitivity of negative photoresist showing insolubility against alkalie solution, with Ag-photodoped, is more prominent than that of positive photoresist used with only a-$Se_{75}Ge_{25}$. It is also showed that the contrast of negative photoresist, ${\gamma}=2.9$, is more prominent than that of positive photoresist, ${\gamma}=1.4$.

  • PDF

바이오 멤스 및 마이크로 시스템 적용을 위한 3차원 마이크로 유로 제작 (Fabrication of 3-D microchannel for biomems and micro systems application)

  • 윤광석
    • 센서학회지
    • /
    • v.15 no.5
    • /
    • pp.357-361
    • /
    • 2006
  • This paper reports a new technology to implement complex PDMS microchannels, which are simply constructed using three-dimensional photoresist structures as mold for PDMS replica process. The process utilizes LOR resist as a sacrificial layer to levitate the structural photoresist and multi-step exposure to control the thicknesses of photoresist structures. Various shapes of photoresist structures were successfully fabricated. Using the PDMS replica method, the three-dimensional photoresist structures are demonstrated to be applicable for implementing complex microchannels in PDMS. In addition, more complex multilevel microchannels are constructed by bonding two PDMS layers with just single PDMS alignment.

Photolithography Process of Organic Thin Film with A New Water Soluble Photoresist

  • Kim, Kwang-Hyun;Song, Chung-Kun
    • 한국정보디스플레이학회:학술대회논문집
    • /
    • /
    • pp.1038-1039
    • /
    • 2004
  • We developed a new photoresist which was composed of polyaniline, uv-curing agent, N-methyl-2- pyrrolidine (NMP) and N-Butyl alcohol (BuOH) as solution. The photoresist is characterized by the capability of being developed in water. We successfully patterned pentacene thin film, which was vulnerable to organic solvent and thus could not be patterned by the conventional photolithography process, with the water soluble photoresist and the minimum feature size was found to be 2um.

  • PDF

노광파장과 근접거리에 따른 두꺼운 감광막의 측면기울기 변화에 관한 연구 (A Study on Variation of the Sidewall Angle of a Thick Photoresist on the Wavelength and the Proximity gap)

  • 한창호;김학;김현철;전국진
    • 반도체디스플레이기술학회지
    • /
    • v.3 no.1
    • /
    • pp.27-30
    • /
    • 2004
  • In this work, the variation of the sidewall profile of a thick photoresist on the wavelength and proximity gap was investigated. PMER P-LA900PM, DNQ (DiazoNaphthoQuinone) novolac type photoresist, is used for experiments. The calculated results agreed well with the experimental results.

  • PDF

Photoresist을 이용한 Thin relief 위상형 홀로그램 격자에 관한 연구. (A Study on thin relief phase holographic grating using photoresist.)

  • 신광용;최도형;김남;박한규
    • 대한전기학회:학술대회논문집
    • /
    • /
    • pp.47-50
    • /
    • 1987
  • There are various holographic recording materials, such as Dichromated Gelatin, Silver Halide, Thermoplastic, Photoresist. In this paper especially, we used Photoresist to make the phase holographic grating. Deep-groove diffractive grating formed in relatively thin holographic recording material is to express high diffraction efficiency. Phase holographic grating recorded In photoresist can be used very practical because it has the high diffraction efficiency, and it is possible to make a replication easily. So, it has the merit in recording the optical holographic grating than any other materials.

  • PDF

Optical Stepper의 이중노광에 의한 미세한 포토레지스트 패턴의 형성 (Very Fine Photoresist Pattern Formation using Double Exposure of Optical Wafer Stepper)

  • 양전욱;김봉렬;박철순;박형무
    • 전자공학회논문지A
    • /
    • v.31A no.7
    • /
    • pp.69-75
    • /
    • 1994
  • A very fine pattern formation process using double exposure is investigated, which can overcome the resolution limit of optical wafer stepper. The very fine pattern can be obtained by moving the edge profile of large pattern by means of moving the stepper stage. The simulation results show that the light transmittance decrease bellow 9%, and the contrast increase to 16.6% for the 0.3$\mu$m photoresist pattern exposeed by the double exposure using i-line wafer stepper. And the experimental results show that fine photoresist pattern as short as 0.2$\mu$m can be obtained without a loss of photoresist thickness. Also, it proves that the depth of focus for 0.3$\mu$m pattern is longer than $1.5\mu$m. And, the very fine negative photoresist pattern was formmed by using the double exposure technique and the image reversal process.

  • PDF

네가티브 포토레지스트용 아크릴레이트계 바인더 합성 (Synthesis of Acrylate Binders for Negative Photoresist)

  • 김난수;남병욱
    • 반도체디스플레이기술학회지
    • /
    • v.8 no.3
    • /
    • pp.25-30
    • /
    • 2009
  • In this study, we synthesized novel UV-curable binders and applied for negative photoresist of display device. First, we synthesized UV-curable binders by radical polymerization with a mixture of Styrene/Methyl methacrylate/Methacrylic acid/Glycidyl methacrylate/N-Cyclohexylmaleimide at a fixed composition. Following the first step, we prepared a negative photoresist mixture optimized with photo sensitive initiator and others for the litho test. And then, we studied resolution and film retention with molecular weight of each binders and numerical value of Alkaline Desolution Rate(ADR). As a result of the litho test, we found that if the novel polymers have same numerical value of ADR, the resolution decreased and the film retention increased with the increasing of molecular weight of photoresist binder.

  • PDF

포토 레지스트의 기술 동향과 화학 증폭형 포토레지스트에서의 광산 발생제의 연구 (Technology Trends for Photoresist and Research on Photo Acid Generator for Chemical Amplified Photoresist)

  • 김성훈;김상태
    • 조선자연과학논문집
    • /
    • v.2 no.4
    • /
    • pp.252-264
    • /
    • 2009
  • Lithographic data obtained from PHS(polyhydroxy styrene) having various functionalities were investigated by using a photoacid generator based on diazo and onium type. Chemically amplified photoresist based on the KrF type photoresist was developed by using a photoacid generator and multi-functional resin. Thermal stability for the photoacid generator showed that the increase of loading amount of photoacid generator resulted in the decrease of glass transintion temperature (Tg). The photoacid generators having methyl, ethyl, or propyl group in their cationic structure produced T-top structure in pattern profile due to the effect of acid diffusion during the generation of acid in the resist. The increase of carbon chain length in the anionic structure of photoacid generators resulted in lower pattern resolution due to the interruption of acid diffusion.

  • PDF