• Title, Summary, Keyword: Photoresist

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Stripping of High-Dose Ion-Implanted Photoresist Using Co-solvent and Ultra-sonication in Supercritical Carbon Dioxide (초임계이산화탄소 내에서 공용매 및 초음파를 이용한 고농도이온주입 포토레지스트의 제거)

  • Kim, Seung-Ho;Lim, Kwon-Taek
    • Clean Technology
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    • v.15 no.2
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    • pp.69-74
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    • 2009
  • A high-dose ion-implanted photoresist (HDIPR) was stripped off from the surface of a semiconductor wafer by using a mixture of supercritical carbon dioxide and a co-solvent. The additional ultrasonication improved the stripping efficiency remarkably and thus reduced the stripping time by supplying physical force to the substrate. We investigated the effect of co-solvents, co-solvent concentration, and stripping temperature and pressure on the stripping efficiency. The wafer surfaces before and after stripping were analyzed by scanning electron microscopy and by an energy dispersive X-ray spectrometer. The HDIPR could be stripped off completely in 3 min with 10%(w/w) acetone/sc$C0_2$ mixture at 27.6 MPa and 343 K.

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대기압 플라즈마 Photoresist Ashing에 관한 연구

  • ;Kim, Yun-Hwan;Lee, Sang-Ro
    • Proceedings of the Korean Vacuum Society Conference
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    • pp.464-464
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    • 2012
  • 본 연구에서는 DBD (Dielectric Barrier Discharge)방식을 통해 발생된 대기압 plasma를 이용한 Photoresist (PR) Ashing에 관한 연구를 하였다. 사용된 DBD 반응기는 기존의 blank planar plate 형태의 Power가 인가되는 anode 부분과 Dielectric Barrier 사이 공간을 액상의 도전체로 채워 넣은 형태의 전극이 사용 하였으며, 인가 Power는 40 kHz AC 최대 인가 전압 15 kV를 사용 하였고(본 연구에서 인가 power는 30 KHz,전압 14 KV를 고정시킴) 플라즈마를 발생시 라디칼의 활성화를 유지하기 위해 전극 온도가 $180^{\circ}C$ 정하였다. Feeding 가스는 N2, 반응가스로는 CDA(Clean Dry Air), SF6와 CF4가스를 사용 하였으며 모든 공정은 In-line type으로 시편을 처리 하였다. CDA ratio의 경우에 질소대비 0.2%때 이송속도 30 mm/sec 1회 처리 기존 PR ashing은 최대 $320{\AA}$의 ashing 두께를 얻을 수 있었다. SF6와 CDA가스를 같이 반응하는 경우 ratio는 CDA : SF6 = 0.6% : 0.6%에서 PR ashing rate이 $841{\AA}/pass$의 값을 얻을 수 있었고, CDA가스만 첨가하는 경우보다 약2.6배 증가함을 관찰할 수 있었다. CF4 가스를 사용하는 경우 ratio는 CDA : CF4 = 0.2% : 0.2%에서 PR ashing rate이 $687{\AA}/pass$의 값을 얻을 수 있으며 CDA가스만 첨가하는 경우보다 약 2.1배 증가함을 관찰할 수 있었다. 그리고 PR ashing rate가 가스첨가종류와 비율에 따라서 변화함을 관찰하였고 최적조건을 찾기 위해 연구를 진행하였다. 추후 PR ashing rate가 향상을 하기 위해 가스혼합비율 및 stage 온도등 조건을 조절하여 공정최적조건을 얻기 위해 연구를 진행하였다.

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A Development on the Non-Photomask Plate Making Technology for Screen Printing (III) (포토마스크가 필요 없는 스크린 제판 기술 개발(III))

  • Kang, Hyo-Jin;Park, Kyoung-Jin;Kim, Sung-Bin;Nam, Su-Yong;Ahn, Byung-Hyun
    • Journal of the Korean Printing Society
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    • v.26 no.2
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    • pp.55-64
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    • 2008
  • We designed a UV-LED exposure system which has 365nm dominant wavelength due to the environment-friendly and economical maskless screen plate making. And the photoresist applied on the screen stretched was exposed without mask by beam projector with UV-LED light source. Then it was developed by air spray with $1.7\;kgf/cm^2$ of injection pressure. The pencil hardness and solvent resistance of curing photoresist film were excellent as those of conventional photoresist film and the maximum resolution of line image formed by maskless screen plate making. was $100{\mu}m$, so we could establish the possibility of environment-friendly maskless screen plate making technology. But the sharpness of the patterns were ${\pm}40{\mu}m$ since the exposure system for maskless plate making has weak light intensity and the diffusion of light.

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A One-Component Negative Photoresist Based on an Epoxy Terpolymer Containing Oxime-Urethane Groups as a Photobase Generator

  • Chae, Kyu-Ho;Park, Jin-Hee
    • Macromolecular research
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    • v.12 no.4
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    • pp.352-358
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    • 2004
  • For their application as one-component photoresists, we prepared epoxy terpolymers containing oxime-urethane and benzophenone groups by the radical polymerization of glycidyl methacrylate (GMA), metha-cryloxyethyl benzophenoneoxime urethane (MBU), and N-(4-benzoyl)phenylmaleimide (BPMI). The terpolymer composition was optimized to provide the most photosensitive photoresist. The photo-decomposition reaction of the oxime-urethane groups in the terpolymer was monitored by UV absorption spectroscopy, and the photo-crosslinking reaction of the epoxy terpolymer was observed by measuring the normalized thickness. The photosensitivity of the epoxy terpolymer increased as the amount of BPMI and MBU units increased up to 16 and 24 mol%, respectively. Among the terpolymers we prepared, terpolymer T-II(contents of GMA, MBU, BPMI are 75, 19, 6.1 mole%, respectively) exhibited the highest photosensitivity ( $D_{c}$ $^{0.5}$ = 430 mJ/$\textrm{cm}^2$) and had a moderate contrast (${\gamma}$$^{p}$ = 1.23). Negative-tone micropatterns having a line width of ca. 10 ${\mu}{\textrm}{m}$ were obtained by developing the system with chloroform.m.

Hydrogen Plasma Characteristics for Photoresist Stripping Process in a Cylindrical Inductively Coupled Plasma

  • Yang, Seung-Kook;Cho, Jung Hee;Lee, Seong-Wook;Lee, Chang-Won;Park, Sang-Jong;Chae, Hee-Sun
    • JSTS:Journal of Semiconductor Technology and Science
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    • v.13 no.4
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    • pp.387-394
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    • 2013
  • As the feature size of integrated circuits continues to decrease, the challenge of achieving an oxidation-free exposed layer after photoresist (PR) stripping is becoming a critical issue for semiconductor device fabrication. In this article, the hydrogen plasma characteristics in direct plasma and the PR stripping rate in remote plasma were studied using a $120{\Phi}$ cylindrical inductively coupled plasma source. E mode, H mode and E-H mode transitions were observed, which were defined by matching the $V_{rms}$ and total impedance. In addition, the dependence of the E-H mode transition on pressure was examined and the corresponding plasma instability regions were identified. The plasma density and electron temperature increased gradually under the same process conditions. In contrast, the PR stripping rate decreased with increasing proportion of $H_2$ gas in mixed $H_2/N_2$ plasma. The decrease in concentration of reactive radicals for the removal of PR with increasing $H_2$ gas flow rate suggests that NH radicals have a dominant effect as the main volatile product.

Reflectivity Control at Substrate / Photoresist Interface by Inorganic Bottom Anti-Reflection Coating for Nanometer-scaled Devices

  • Kim, Sang-Yong;Kim, Yong-Sik
    • Transactions on Electrical and Electronic Materials
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    • v.15 no.3
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    • pp.159-163
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    • 2014
  • More accurate CD (Critical Dimension) control is required for the nanometer-scaled devices. However, since the reflectivity between substrate and PR (Photoresist) becomes higher, the CD (Critical Dimension) swing curve was intensified. The higher reflectivity also causes PR notching due to the pattern of sub-layer. For this device requirement, it was optimized for the thickness, refractive index(n) and absorption coefficient(k) in the bottom anti-reflective coating(BARC; SiON) and photoresist with the minimum reflectivity. The computational simulated conditions, which were determined with the thickness of 33 nm, n of 1.89 and k of 0.369 as the optimum condition, were successfully applied to the experiments with no standing wave for the 0.13um-device. At this condition, the lowest reflectivity was 0.44%. This optimum condition for BARC SiON film was applied to the process for 0.13um-device. The optimum SiON film as BARC to PR and sub-layer could be formed with the accurate CD control and no standing waver for the nanometer-scaled semiconductor manufacturing process.

Effects of Bias Voltage and Ion-incident Angle on the Etching of Photoresist in a High-density CHF3 Plasma (고밀도 CHF3 플라즈마에서 바이어스 전압과 이온의 입사각이 Photoresist의 식각에 미치는 영향)

  • Kang, Se-Koo;Min, Jae-Ho;Lee, Jin-Kwan;Moon, Sang Heup
    • Korean Chemical Engineering Research
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    • v.44 no.5
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    • pp.498-504
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    • 2006
  • The etch rates of photoresist (PR) and the etch selectivity of $SiO_2$ to PR in a high density $CHF_3$ plasma were investigated at different ion-incident angles and bias voltages. A Faraday cage was employed for the accurate control of ion-incident angles. The ion energy was controlled by changing bias voltages. The etch rate of $SiO_2$ continuously decreased with ion-incident angles but the etch rate of PR remained constant up to the middle angle region and decreased afterwards. The etch rates of $SiO_2$ normalized to those at $0^{\circ}$ incident angle changed with the ion-incident angle following a cosine(${\theta}$) curve. On the other hand, the normalized etch rates of the PR changed showing a drastic over-cosine shape in the middle angle region. The etch selectivity of $SiO_2$ to PR decreased with an increase in the ion-incident angle because the etch yields of PR were enhanced by physical sputtering in the middle angle region compared to the case of $SiO_2$ etching. The etch selectivity of $SiO_2$ to PR decreased with an increase in the bias voltage at nearly all ion-incident angles.

Activation of Stripper Solution by Plasma and Hardness/Modulus of Elasticity Change of the Surface (Plasma를 이용한 세정액의 활성화와 시료 표면의 탄성계수 및 강도 변화에 대한 연구)

  • Kim, Soo-In;Kim, Hyun-Woo;Noh, Seong-Cheol;Yoon, Duk-Jin;Chang, Hong-Jun;Lee, Jong-Rim;Lee, Chang-Woo
    • Journal of the Korean Vacuum Society
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    • v.18 no.2
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    • pp.97-101
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    • 2009
  • In the modem semiconductor industry, the progress that consumes the most capital and labor is cleansing process. Cleansing process is to remove impurities that can affect the operation of the device and deteriorate its function. Especially, Photoresist (PR) progress that etches the device always requires cleansing at the end of the progress. Also, HDI-PR (High-Dose Ion-implanted Photoresist) created from PR progress is difficult to remove. Thus, in modem IC cleansing, many steps of cleansing are used, including dry and wet cleansing. In this paper, we suggested to combine existing dry-cleansing and wet-cleansing, each represented by plasma cleansing and stripper solution, as Plasma Liquid-Vapor Activation (PLVA). This PLVA method enhances the effect of existing cleansing solution, and decreases the amount of solution and time required to strip. We stripped HDI-PR by activated solution and measured surface hardness and Young's modulus by Nano-indenter. Nano-indenter is the equipment that determines the hardness and the modulus of elasticity by indenting nano-sized tip with specific shape into the surface and measuring weight and z-axis displacement. We measured the change of surface hardness and Young's modulus before and after the cleansing. As a result, we found out that the surface hardness of the sample sharply decreased after the cleansing by plasma-activated PR stripper solution. It can be considered that if physical surface-cleansing process is inserted after this, more effective elimination of HDI-PR is possible.

Stripping of Ion-Implanted Photoresist Using Cosolvent-Modified Supercritical Carbon Dioxide (공용매로 변형된 초임계 이산화탄소를 이용한 이온 주입 포토레지스트 세정)

  • Jung, In-Il;Kim, Ju-Won;Lee, Sang-Yun;Kim, Woo-Sik;Ryu, Jong-Hoon;Lim, Gio-Bin
    • Korean Chemical Engineering Research
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    • v.43 no.1
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    • pp.27-32
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    • 2005
  • We propose an effective and environmentally friendly dry stripping method using a supercritical carbon dioxide ($SCCO_2$) system modified by a single and multiple cosolvents to remove ion-implanted photoresist and residue from a wafer surface at three different temperatures (97, 148, $200^{\circ}C$) and pressures (200, 300, 400 bar). After high dose of ion implantation the photoresist was not easily removed by using pure $SCCO_2$, but swollen. The $SCCO_2$ system modified by single cosolvents and multiple cosolvents mixed with aprotic solvents could not effectively remove the heavy organics, but swell them. However, the $SCCO_2$ system modified with multiple cosolvent (5%, v/v) composed of DMSO and DIW showed high removal efficiency for ion-implanted photoresists at $97^{\circ}C$ and 200 bar for 30 min (about 80%). In this study it has been shown that the dry stripping method using $SCCO_2$ system modified with multiple cosolvents could replace either plasma ashing or acid and solvent wet bench method and dramatically reduce accompanied chemical usage and disposal.