• Title, Summary, Keyword: Photoresist

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Development of fabrication process for toroidal inductors using electroplating method (도금 공정을 이용한 토로이드형 마이크로 인덕터의 제작 공정 개발)

  • Noh, Il-Ho;Jang, Suk-Won;Kim, Chang-Kyo
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • pp.408-411
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    • 2003
  • 최근 활발하게 연구가 진행되고 있는 마이크로 인덕터는 자기 데이터 저장을 위한 헤드, 자기장 센서, 마이크로 변압기와 휴대폰의 수동 소자와 같은 다양한 분야에 이용되고 있다. 마이크로 인덕터를 제작하기 위해 UV-LIGA 공정을 개발하였다. 도금 공정을 이용하여 마이크로 인덕터의 철심과 구리선 제작하였다. 도금 공정을 위해 필요한 마이크로 몰드는 여러 종류의 thick photoresist를 이용하여 저응력 공정으로 제작하였다. 도금 공정을 이용하여 toroid형 마이크로 인덕터를 제작하였다. 도금 공정에서 발생 할 수 있는 응력을 최소화할 수 있는 공정을 개발하였다.

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Optimization of Laser Lithography Micropatterning Technique based on Taguchi Method (다구찌 방법을 이용한 레이저 리소그라피 미세패턴 가공조건의 최적화)

  • Baek, Nam-Guk;Kim, Dae-Eun
    • Journal of the Korean Society for Precision Engineering
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    • v.19 no.7
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    • pp.59-64
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    • 2002
  • Laser lithography technique is useful for fabricating micro-patterns of silicon wafers. In this work, the laser lithography micromachining technique is optimized based on Taguchi method. Sensitivity analysis was performed using laser scanning speed, laser power level, developing time and mixture ratio between developer and Di-water as the parameters. The results show that for the photoresist used in this work, 70${\mu}m$/s scan speed, 50㎽ laser power, 60sec. developing time and 6: 1 mixture ratio gives the best result. This work shows the effectiveness of laser lithography technique in fabricating patterns with a flew micrometer in width.

직병렬 유도결합형 안테나를 이용한 대면적 플라즈마 소스 연구

  • 김봉주;이승걸;오범환;이일항;박세근
    • Proceedings of the IEEK Conference
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    • pp.201-204
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    • 2002
  • A large area inductively coupled plasma which is applicable to LCD processing is built with a modified single loop RF antenna. Combination of parallel and series paths of RF current through the antenna induces local enhancement of plasma density, which in turn provides uniform plasma density near the substrate. The plasma density distribution is measured and compared with that of the conventional single loop antenna. Aisotropic etching of photoresist is performed, and it is found that etch uniformity is improved by 3% from 15% of the conventional etcher over 350$\times$300mm glass substrates. Photoresist etching rate and uniformity can be further improved by applying a periodic weak axial magnetic fieid.

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Fabrication of the Photoresist Surface-Relief Phase Holographic Grating and Its Performance Test (포토레지스트 surface-Relief 위상형 홀로그라피 분광회절격자의 제작 및 성능평가)

  • 정만호;이인원;이상배;박민용
    • Journal of the Korean Institute of Telematics and Electronics
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    • v.24 no.5
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    • pp.868-873
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    • 1987
  • Holographic diffraction gratings which are the core element of the optical instruments such as a spectrophotometer have been fabricated using the photoresist as a recording material. A 488nm line from an argon laser is used in making the gratings. Transmission type surface-relief phase grating and reflection type which is fabsricated by coating the aluminum on the transmission type with thickness 2000\ulcornerare fabricated, the spatical frequency of which are 1200 lines/mm. Diffraction efficiency, scattered light and wave-front aberratin are measured to test the performance of the developed gratings. A marimum diffraction efficiency is given when light is incident at the Bragg angle. Theoretical efficiency is about 80%, but measured efficiency of the transmission type and reflection type is 50% and 45%, respectively.

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Novel offset gated poly-Si TFTs with folating sub-gate (부동 게이트를 가진 새로운 구조의 오프셋 다결정 실리콘 박막 트랜지스터)

  • 박철민;민병혁;한민구
    • Journal of the Korean Institute of Telematics and Electronics A
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    • v.33A no.7
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    • pp.127-133
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    • 1996
  • In this paper, we propose a new fabrication method for poly-Si TFTs with a self-aligned offset gated structure by employing a photoresist reflow process. Compared with the conventional poly-Si TFTs, the device is consist of two gate electrodes, of which one is the entitled main gate where the gate bias is employed and the other is the entitled subgate which is separate form both sides of the main gate. The poly-Si channel layer below the offset oxide is protected form the injected ion impurities for the source/drain implantation and acts as an offset region of the proposed device. The key feature of oru new device is the offset region due to the offset oxide. our experimental reuslts show that the offset region, due to the photoresist reflow process, has been sucessfully obtained in order to fabricate the offset gated poly-Si TFTs. The maximum ON/OFF ratio occurs at the L$_{off}$ of 1.1${\mu}$m and exceeds 1X10$^{6}$.

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0.25um T-gate MESFET fabrication by using the size reduction of pattern in image reversal process (형상반전공정의 패턴형성시 선폭감소를 이용한 0.25um T-gate MESFET의 제작)

  • 양전욱;김봉렬;박철순;박형무
    • Journal of the Korean Institute of Telematics and Electronics A
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    • v.32A no.1
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    • pp.185-192
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    • 1995
  • In this study, very fine photoresist pattern was examined using the image reversal process. And very fine photoriesist pattern (less than 0.2um) was obtsined by optimizing the exposure and reversal baking condition of photoresist. The produced pattern does not show the loss of thickness, and has a sparp negative edge profile. also, the ion implanted 0.25um T-shaped gate MESFET was fabricated using this resist pattern and the directional evaporation of gate metal. The fabricated MESFET has the maximum transconductance of 302 mS/mm, and the threshold voltage of -1.8V, and the drain saturation current of this MESFET was 191 mA/mm.

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Reactive Ion Etching of Pt Thin Films (Pt 박막의 반응성 이온식각)

  • 양정승;김민홍;윤의준
    • Journal of the Korean Vacuum Society
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    • v.5 no.3
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    • pp.263-267
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    • 1996
  • Reactive ion etching of Pt thinfilm was studied using $CCl_2F_2$, Ar, and $O_2$ . Etch rate of the Pt increased as the total pressure decreases and the RF power increased, while the flow rate of $CCl_2F_2$ had little effect on the Pt etch rate. Addition of $O_2$ had no effect on Pt etch rate up to 20% $O_2$ Selectivity between Pt and photoresist increased as the pressure decreased and the RF power increased, making it possible to pattern a thicker Pt layer with a thinner photoresist. A maximum etch rate of 300$\AA$/min was obtained at $CCl_2F_2$ flow rate of 20 sccm. RF power of 400 W, and the total pressure of 60mTorr.

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Syntheses and Properties of Photosensitive Polyimides Using O-Nitrobenzyl Ester Group (o-Nitrobenzyl Ester기를 이용한 감광성 폴리이미드의 합성과 그 특성)

  • 문수진;주소영;전병철;홍성일
    • Textile Science and Engineering
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    • v.29 no.11
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    • pp.63-70
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    • 1992
  • The photosensitive polyamide precursors were synthesized from pyromellitic acid dich-loride di(o-nitrobenzyl) ester with o-nitrobenzyl group and two amines such as m-phenylene diamine and m-diaminobenzophenone by interfacial polycondensation reaction. The polymers obtained were able to be converted into usual polyimide by curing The photoreaction mechanism of photosensitive polyimide precursors was investigated by UV and NMR spectroscopy. It was considered from the absorbance of UV at 23O~28Onm that characteristic rearrangement in the o-nitrobenzyl ester occurred m this system. Their thermal properties were studied using thermogravimetry, both polylmide precursors exhibited the weight loss in two stages. The second weight loss depends on the thermal degradation of polyimide. Noticeable weight loss was observed at about 500˚C. After preparing photoresist from these polyimide precursors synthesized, normalized thickness remaining were measured with varying exposure energy to determine whether the polymers can be used as a commercial photoresist.

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