• 제목, 요약, 키워드: Photoresist

검색결과 417건 처리시간 0.043초

ZEP520 포토리지스트를 이용한 나노 패턴 형성을 위한 전자빔 리소그래피 공정 모델링 및 시뮬레이션 (Modeling and Simulation of Electron-beam Lithography Process for Nano-pattern Designs using ZEP520 Photoresist)

  • 손명식
    • 반도체디스플레이기술학회지
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    • v.6 no.3
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    • pp.25-33
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    • 2007
  • A computationally efficient and accurate Monte Carlo (MC) simulator of electron beam lithography process, which is named SCNU-EBL, has been developed for semiconductor nanometer pattern design and fabrication. The simulator is composed of a MC simulation model of electron trajectory into solid targets, an Gaussian-beam exposure simulation model, and a development simulation model of photoresist using a string model. Especially for the trajectories of incident electrons into the solid targets, the inner-shell electron scattering of an target atom and its discrete energy loss with an incident electron is efficiently modeled for multi-layer resists and heterogeneous multi-layer targets. The simulator was newly applied to the development profile simulation of ZEP520 positive photoresist for NGL(Next-Generation Lithography). The simulation of ZEP520 for electron-beam nanolithography gave a reasonable agreement with the SEM experiments of ZEP520 photoresist.

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SPM을 이용한 반도체 포토레지스트 제거 공정 대체를 위한 DIW-$O_3$ 방식 세정기술 개발 (Development of the DIW-$O_3$ Cleaning Technology Substituted for the Semiconductor Photoresist Strip Process using the SPM)

  • 손영수;함상용
    • 연구논문집
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    • pp.99-109
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    • 2003
  • Recently the utilization of the ozone dissolved de-ionized water(DIW-$O_3$) in semiconductor wet cleaning process and photoresist stripping process to replace the conventional sulfuric acid and hydro peroxide mixture(SPM) method has been studied. In this paper, we propose the water-electrode type ozone generator which has the characteristics of the high concentration and purity to produce the high concentration DIW-$O_3$ for the photoresist strip process in the semiconductor fabrication. The proposed ozone generator has the dual dielectric tube structure of silent discharge type and the water is both used to electrode and cooling water. Through this study, we obtained the results of the 10.3 wt% of ozone gas concentration at the oxygen gas of 0.5 [liter/min.] and the DIW-$O_3$ concentration of 79.5 ppm.. Through the photoresist stripping test using the produced DIW-$O_3$, we confirmed that the photoresist coated on the silicon wafer was removed effectively in the 12 minutes.

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Azido기를 함유한 수용성 포토레지스트 제조 및 감광 특성 (Preparation and Properties of Water-Soluble Photosensitive Polymer with Azido Group)

  • 윤근병;이준태;한정엽;이동호
    • 폴리머
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    • v.31 no.5
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    • pp.374-378
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    • 2007
  • Acrylamide(AM), diacetone acrylamide(DAAM) 및 acrylic acid(AAc)를 사용하여 수용성 삼원공중합체를 제조하고, 4-azidoaniline을 반응하여 azido기를 고분자 곁사슬에 도입한 일성분계 포토레지스트를 제조하였다. AM을 주성분으로 하고 DAAM을 공단량체로 사용한 공중합체를 합성하구 광가교제로 4,4'-diazidostilbene 2,2'-disulfuric acid sodium salt(DAS)를 혼합한 이성분계 포토레지스트를 제조하여 두 종류 포토레지스트의 감광특성을 비교하였다. 포토레지스트의 azido기 1 mol에 대한 감광특성은 고분자 곁사슬에 azido기를 가진 일성분계의 경우가 bis-azido기를 가진 이성분계보다 약 4배정도 우수한 감광성을 나타내었다. 직경 $110{\mu}m$ 크기의 원형패턴을 낮은 광세기에서 일성분계 포토레지스트를 사용하여 얻었으며, 노광부와 비노광부 계면에 잔존물이 없이 원형 패턴이 형성되어 블랙 매트릭스용 negative 포토레지스트로 활용이 기대된다.

Photoresist thermal reflow 방법을 이용하여 제작한 마이크로렌즈 어레이의 형상 관련 오차 및 이에 대한 보정 (Shape Error and Its Compensation in the Fabrication of Microlens Array Using Photoresist Thermal Reflow Method)

  • 김신형;홍석관;이강희;조영학
    • 마이크로전자및패키징학회지
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    • v.20 no.2
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    • pp.23-28
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    • 2013
  • 마이크로렌즈 어레이는 광학 시스템의 기본 부품으로, 사용 목적에 따라 초점거리가 다르게 제작되며, 대체로 긴 초점거리의 렌즈들이 많이 제작되고 있다. 본 논문에서는 졸겔(sol-gel) 내부에 들어있는 형광으로 염색된 물질을 관찰하기 위하여 마이크로렌즈 어레이를 제작하였다. 일반적으로 형광 현미경에서 관찰되는 형광 빛은 그 강도가 약하지만 마이크로렌즈를 이용할 경우 빛을 집중시켜 선명한 관찰이 가능하게 한다. 이를 실현시키기 위해 photoresist thermal reflow법을 사용하여 초점 거리가 짧은 마이크로렌즈를 제작하였으며, 렌즈의 형상 관련 오차를 측정하였다. 측정 오차에 기반을 둔 포토마스크 보정 및 스핀 코팅 조건을 조정하여 적합한 마이크로렌즈의 직경과 형상을 구현하였다.

인쇄 제판용 Photoresist의 잔막수율법에 의한 용해도 비교 (Solubility Comparison by Yield Method of Residual of Photoresist for Printing Plate)

  • 윤철훈;황성규;오세영;최성용;이기창
    • 한국응용과학기술학회지
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    • v.15 no.1
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    • pp.25-33
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    • 1998
  • Photoresist is defined as substance that makes chemical changes in its solubility, colouring and hardening by light energy. In this study, photosensitive photoresists of the positive type for a printing plate were studied. PF, o-, m-, p-CF resins as a matrix resin were synthesized at an identical condition. Photoresists were prepared by mixing NDS derivatives with a matrix resin at various mixing ratios. Characteristics of photoresists were studied by yield method of residual using solubility and Optical microscope was also analyzed. Prepared photoresist using NDS derivatives shows excellent photosensitivity and solubility compared with commercial product. The mixing ratio of 1:4(by mass) of NDS derivative[III] and m-CF resin shows the highest dissoultion rate among others. In addition, photoresist was obtained at this condition resulted in the superior sensitivity and contrast.

포토마스크가 필요 없는 스크린 제판 기술 개발(II) (A Development on the Non-Photomask Plate Making Technology for Screen Printing (II))

  • 박경진;강효진;김성빈;남수용;안병현
    • 한국인쇄학회지
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    • v.26 no.2
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    • pp.45-54
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    • 2008
  • We have manufactured a photoresist which has excellent dispersity and good applying property due to 330 cps of viscosity for environment-friendly and economical maskless screen plate making. And the photoresist applied on the screen stretched was exposed with mask by UV-LED light source so we could manufacture the photoresist which proper for the UV light source. And it was developed by air spray with $1.7\;kgf/cm^2$ of injection pressure. Because of the excellence of power and resolution of the UV-LED light sourse, the pencil hardness and solvent resistance of curing photoresist film were excellent as those of conventional photoresist film. Moreover the $100{\mu}m$-width stripe image which has sharp edges was formed. So we confirmed a possibility of dry development process by air spray method.

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반도체 생산공정의 감광액 도포를 위한 FPCS에 관한 연구 (Study on the FPCS for Photoresist Coating of Semiconductor Manufacturing Process)

  • 박형근
    • 한국산학기술학회논문지
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    • v.14 no.9
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    • pp.4467-4471
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    • 2013
  • 본 연구에서는 Nano급 반도체 생산공정에서 필수적인 스피너(spinner) 설비의 감광액 도포(photo resist coating)시스템의 효율을 획기적으로 개선할 수 있는 새로운 완전스캔(Full-scan) 방식의 감광액 도포시스템(FPCS : Full-scan Photo-resist Coating System)을 개발하였다. 또한, 감광액의 미 도포로 인한 복합적인 공정불량을 예방하기 위하여 실시간(real-time)으로 상태요소들을 감시할 뿐만 아니라 상태요소의 비정상적 변화나 웨이퍼 가공불량이 발생할 경우 해당 유니트(unit)를 정지시킴과 동시에 원격지에 있는 엔지니어에게 경보를 전송함으로써 즉각적인 대처가 가능할 수 있도록 개발하였다.

Constructing a Three-Dimensional Endothelial Cell Layer in a Circular PDMS Microchannel

  • Choi, Jong Seob;Piao, Yunxian;Kim, Kyung Hoon;Seo, Tae Seok
    • 한국진공학회:학술대회논문집
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    • pp.274.2-274.2
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    • 2013
  • We described a simple and efficient fabrication method for generating microfluidic channels with a circular-cross sectional geometry by exploiting the reflow phenomenon of a thick positive photoresist. Initial rectangular shaped positive photoresist micropatterns on a silicon wafer, which were fabricated by a conventional photolithography process, were converted into a half-circular shape by tuning the temperature to around $105^{\circ}C$. Through optimization of the reflow conditions, we could obtain a perfect circular micropattern of the positive photoresist, and control the diameter in a range from 100 to 400 ${\mu}m$. The resultant convex half-circular photoresist was used as a template for fabricating a concave polydimethylsiloxane (PDMS) through a replica molding process, and a circular PDMS microchannel was produced by bonding two half-circular PDMS layers. A variety of channel dimensions and patterns can be easily prepared, including straight, S-curve, X-, Y-, and T-shapes to mimic an in vivo vascular network. To inform an endothelial cell layer, we cultured primary human umbilical vein endothelial cells (HUVECs) inside circular PDMS microchannels, and demonstrated successful cell adhesion, proliferation, and alignment along the channel.

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Deep UV Photoresists;Dissolution Inhibitor

  • Shim, Sang-Yeon;Crivello, James V.
    • 한국응용과학기술학회지
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    • v.17 no.3
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    • pp.188-191
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    • 2000
  • A new class of deep UV Photoresist based on the principles of chemical amplification was developed. This photoresist consists of three basic elements: a copolymer, blocked tetrabromobisphenol-A as a dissolution inhibitor and a photosensitive onium salt as a photoacid generator. On irradiation followed by a post exposure bake, tert-butoxycarbonyloxy phenyl group is converted to phenol group. Thus the initially base insoluble resin is converted under UV irradiation to a base soluble resin which may be preferentially removed by dissolution. This new photoresist display high sensitivity, 10 $mJ/cm^{2}$.