• Title, Summary, Keyword: Photoresist

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A Study on Micro-patterning used the UV-Curable Resin (UV경화성 수지를 이용한 미세패턴 형성에 관한 연구)

  • 남수용
    • Journal of the Korean Printing Society
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    • v.19 no.2
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    • pp.68-78
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    • 2001
  • UV-curable resin has the properties of quick-drying, thigh productivity at low temperature, energy savint, space saving, solventless, non-polluting and low-stinking, and thus, UV-curing system has been widely used in the fields of printing inks, adhesives, paints and coating agents. This study has been executed to micro-patterning used UV-curable resin, The micro-patterning properties of this photoresist were investigated under irradiation of UV light low pressure mercury lamp. When the exposed photoresist film was developed by pure water developer, the resolution of this photoresist was about 50$\mu\textrm{m}$.

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Formation of Black Matrix Pattern by using Black Photoresist

  • Cho, Yoon-Lae;Kim, Tae-Yong;Kim, Jin-Mog;Song, Jeong-Mok;Koh, Nam-Je
    • 한국정보디스플레이학회:학술대회논문집
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    • pp.1047-1050
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    • 2002
  • Generally, the Black Matrix of CRT is formed by the application of photoresist and black material separately. We have developed the simple process for black matrix of CRT. We used the black photoresist, It made it possible that the formation of Black Matrix by application of the light exposure and development only once.

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Image Reversal Photoresist for the Single Isolation Structure of OLEDs (오엘이디의 단열 소자분리 구조를 위한 이미지 라버셜 감광제)

  • Lee, Seung-Jun;Sin, Yun-Su;Chae, Gyeol-Yeo;Im, Dae-U;Choe, Gyeong-Hui
    • Proceedings of the Optical Society of Korea Conference
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    • pp.541-542
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    • 2009
  • We have developed an image reversal photoresist with high thermal stability and electric insulating properties for the single isolation structure of OLEDs. The thermal stability and electric insulating properties are investigated and compared with those of conventional insulator and cathode separator materials. The single isolation structure using the image reversal photoresist reduces the fabrication process steps and cuts down the manufacturing cost.

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Synthesis of Imide Monomers for Application to Organic Photosensitive Interdielectric Layer

  • Kwon, Hyeok-Yong;Vu, Quang Hung;Lee, Yun-Soo;Park, Lee-Soon
    • 한국정보디스플레이학회:학술대회논문집
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    • pp.816-819
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    • 2008
  • A negative photoresist formulation was developed utilizing synthesized UV monomers containing imide linkage, photoinitiator, UV oligomer, and alkali developable polymer matrix. It was found that via-holes with good resolution, high transmittance and thermal resistance could be obtained by photolithographic process utilizing the negative-type photoresist formulations.

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A Study of Measuring a sophisticated Photoresist dispense (PR(Photoresist) 분사량 측정에 관한 연구)

  • Shin, Dong-Won;Lee, Sung-Young;Kim, Sang-Sik;Lee, Joong-Hyeon;Han, Min-Suk
    • Proceedings of the IEEK Conference
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    • pp.385-386
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    • 2008
  • Reducing the PR(Photoresist) dispense Rate is one of the important issues in Photolithography. It is a main concern that variation in PR dispense rate and existance of microbubble. so we need to measure the photoresist dispense rate more precisely. This paper presented a noble sensor of measuring the PR dispense and detecting the microbubble.

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The Development of Silylated Photoresist Etch Process by Enhanced- Inductively Coupled Plasma (Enhanced-Inductively Coupled Plasma (E-ICP)를 이용한 Silylated photoresist 식각공정개발)

  • 조수범;김진우;정재성;오범환;박세근;이종근
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.15 no.3
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    • pp.227-232
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    • 2002
  • The silylated photoresist etch process was tested by enhanced-ICP. The comparison of the two process results of micro pattern etching with $0.35\mu\textrm{m}$ CD by E-ICP and ICP reveals that I-ICP has bettor quality than ICP. The etch rate and the RIE lag effect was improved in E-ICP. Especially, the problem of the lateral etch was improved in E-ICP.

The Method and Apparatus for Photoresist Spray Coating with High Temperature Rotational Chuck (고온 회전 척을 구비한 포토레지스트 Spray Coating 방법 및 장치)

  • Park, Tae-Gyu;Kim, Jun-Tae;Kim, Kook-Jin;Suk, Chang-Gil
    • Proceedings of the KIEE Conference
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    • pp.42-44
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    • 2003
  • The paper presents the method and apparatus for conformal photoresist spray coating on the 3D structured substrate. The system consists of a high-temperature-rotational chuck, ultrasonic spray nozzle module, angle control module and nozzle moving module. The coating uniformity is acquired by controlling the moving speed of the ultrasonic spray nozzle across the substrate which is rotated constantly. To coat the photoresist conformally the spray angle of the nozzle and the temperature of the substrate are controlled during spray coating. The rotational chuck can be heated up by hot air or $N_2$. The photoresist (AZ1512) has been coated on the 3D structured wafer by spray coating system and the characteristics have been evaluated.

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A study on patterning of photosensitive polyimide LB film (감광성 polyimide LB막의 pattern형성에 관한 연구)

  • 김현종;채규호;김태성
    • Electrical & Electronic Materials
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    • v.9 no.1
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    • pp.59-66
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    • 1996
  • Polyimides containing cyclobutane ring in main chain is known to be thermally stable and able to be developed in organic solvents after photolysis with 254 nm UV light. This type of polyimides can be used as promising positive photoresist in VLSI fabrication process. In the current VLSI process, photoresist films are formed by spin coating. The film thickness is more than several hundred nano meters. It seems that there is room for improvement of film coating process by introducing Langmuir Blodgett technique. Thereby ultra thin film photoresist can be formed, and higher density of integration in VLSI be achieved. In the present work, depositing procedure of LB films of this polyimide was investigated. LB film thickness was measured by ellipsometry to evaluate deposited film status. Chemical imidization procedure was studied to avoid several problems in thermal imidization. The pattern of submicron dimension has successfully formed on LB film of 8nm thick, which found showing good contrast.

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An Ellipsometry Study of Water Absorption in the 193 nm photoresist (Ellipsometry를 이용한 193 nm photoresist에서의 물의 흡수 연구)

  • Lee, Hyoung-Joo;Lee, Jung-Hwan;Seo, Ju-Bin;Kyoung, Jai-Sun;An, Il-Sin
    • Journal of the Semiconductor & Display Technology
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    • v.5 no.2
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    • pp.37-39
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    • 2006
  • We employed in-situ spectroscopic ellipsometry(SE) and imaging ellipsometry(IE) to study the interaction of water and photoresist(PR) in 193 immersion lithography. Real time measurement of SE showed thickness increase when PR was immerged in water indicating swelling effect. From the temporal evolution we could observe its reaction-limited behavior. Meanwhile, IE could identify the modification of PR surface by contact of water even for a short period of a second.

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Effect of pulse plasma for thermally hardened photoresist residue removal (플라즈마 충격 방법을 이용한 열경화된 Photoresist 잔여물(residue) 제거 연구)

  • Ko, Hoon;Kim, Soo-In;Choi, Soo-Jeong;Lee, Chang-Woo
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • pp.132-133
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    • 2007
  • 반도체 소자의 제조 공정 기술이 발전하고 초고집적화가 됨에 따라 소자 선폭도 급속하게 감소하였다. 이로 인하여 기존의 식각 공정에서 식각 후 남은 잔여 Photoresist residue는 소자 생산에 큰 영향이 없었으나 현재 이러한 잔여물은 초고집적 소자에 치명적인 문제를 발생시킬 수 있다. 본 실험에서는 세정액 분자에 플라즈마 충격을 가하여 세정액을 활성화함으로써 기존의 세정액과의 세정능력을 비교 분석하였다.

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