• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• pp.214-215
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• 2007

Etch rates and surface chemistry of phenol formaldehyde-based photoresist after short time $O_2\;and\;N_2O$ radio frequency (RF) plasma treatment depending on exposure time were investigated. It was found that the etch rate of photoresist sharply increased after discharge turn on and reached a limit with increase in plasma exposure time in both gases. X-ray photoelectron spectroscopy (XPS) analysis showed that the surface chemical structure become nearly constant after the treatment of 15 sec. Concentration of surface oxygen-containing groups after processing both in oxygen and in $N_2O$ plasmas is similar.

• Korean Journal of Optics and Photonics
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• v.20 no.2
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• pp.118-122
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• 2009

An optical sheet with microlens array (MLA) is designed and fabricated as a substitute for the prism sheets of LCD backlight. Using photoresist thermal reflow, MLAs were fabricated on PET film with thickness of $100{\mu}m$, and we measured the change of MLA profile in terms of exposure time, reflow temperature and reflow time.

• Transactions on Electrical and Electronic Materials
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• v.8 no.5
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• pp.211-214
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• 2007

Chemical and morphological changes of phenol formaldehyde-based photoresist after $O_2$ radiofrequency(RF) plasma treatment depending on exposure time and source power were investigated. It was found that etch rate of photoresist sharply increased after discharge turn on and reached a limit with increase in plasma exposure time. Contact angle measurements and X-ray photoelectron spectroscopy(XPS) analysis showed that the surface chemical structure become nearly constant after 15 sec of the treatment. Atomic force microprobe(AFM) measurements were shown that surface roughness was increased with plasma exposure time.

• Journal of the Korean Printing Society
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• v.26 no.1
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• pp.73-85
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• 2008

We have manufactured a photoresist which has excellent dispersity and good applying property due to 330cps of viscosity for environment-friendly and economical maskless screen plate making. And the photoresist applied on the screen stretched was exposed without mask by beam projector with CRT light source. Then it was developed by air spray with $1.7kgf/cm^2$ of injection pressure. The pencil hardness and solvent resistance of curing photoresist film were worse than those of conventional photoresist film and the maximum resolution of line image formed by maskless screen plate making was 0.5 mm since the exposure system for maskless plate making has weak light intensity and the diffusion of light. But we could obtain maskless screen plate which has sharp edges of line image and confirm a possibility of dry development process by air spray method.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.17 no.11
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• pp.1143-1148
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• 2004

In this study, photoresist stripping in semiconductor or LCD (liquid crystal display) fabrication processes using DIO, was investigated. In order to obtain the high PR stripping efficiency of DIO. we have developed new ozone-generating system with high ozone concentration and ozone-resolving system with high contact ratio. In this study, we obtained ozone gas concentrations of 11 % by new ozone-generating system, ozone-resolving efficiency of 99.5 % and maximum solubility of 130 ppm in deionized water. We applied the newly designed equipments to photoresist stripping processes and obtained similar results to SPM(sulfuric-peroxide mixture) process characteristics.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• pp.242-242
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• 2008

반도체 공정에서 일정한 패턴을 만들기 위하여 Photoresist (PR)를 이용한 식각 공정을 사용하게 된다. 이러한 식각 공정은 반도체 직접도가 증가되면서 더욱 많은 단계의 공정을 요구하게 되었다. 그러나 식각 공정의 증가는 반도체 소자 생산을 위한 더 많은 시간과 비용을 요구하게 된다. 이를 해결하기 위하여 Photoresist를 사용하지 않은 공정으로 공정 단계를 간소화하기 위한 연구를 진행하고 있지만 아직 명확한 대한은 없다. 본 연구에서 는 PR의 strip 시간을 최대한 단축시키고 PR strip 잔여물의 빠른 제거를 위하여 기존 공정에서 사용 중인 strip 약 액을 플라즈마에 의하여 활성화하는 방법으로 PR strip 시간을 최대한 줄이는 방법에 대한 연구를 진행하였으며, 활성화된 strip용액이 더욱 빠른 strip율을 나타내는 것을 확인하였다. 또한 약액 활성화 방법으로 활성화된 strip 용액으로 PR을 일부 제거한 후 PR 표면의 물리적 특성 변화를 분석하여 약액 활성화된 strip 용액으로 인한 PR의 특성을 물리적 방법으로 접근하여 연구를 진행하였다.

• Proceedings of the Korean Vacuum Society Conference
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• pp.77-77
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• 2007

• Clean Technology
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• v.13 no.4
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• pp.257-265
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• 2007

As a basic study for the development of pilot-scale distillation process of waste photoresist strippers from semiconductor industry, lab-scale experiments for the recovery of NMP (N-methy1-pyrrolidione) and BDG (Butyldiglycol) from waste photoresist strippers have been made using a spinning band vacuum distillation column. Purities of NMP and BDG obtained from the present experiments were higher than 99.5%. Furthermore, water content was less than 1000 ppm, color grade(APHA) less than 50, most metal contents except sodium less than 1 ppb. Those results indicate that NMP and BDG reclamed by distillation satisfy the their specifications required for the formulation of new photoresist strippers. Recovery rate of NMP and BDG was 96 and 53%, respectively, for type A, and 93 and 57%, respectively, for type B waste PR stripper solution.

• Journal of the Korean Applied Science and Technology
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• v.32 no.3
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• pp.512-521
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• 2015

In this research, environmental friendly organic acid containing microetching system to improve adhesion strength between photoresist resin and Copper Clad Laminate(CCL) was developed without using strong oxidant $H_2O_2$. Etching rate and surface contamination on CCL were examined with various etching conditions with different etchants, organic acids and additives. to develope an optimum microetching condition. Etching solution with 0.04 M acetic acid showed the highest etching rate $0.4{\mu}m/min$. Etching solution with the higher concentration of APS showed the higher etching rate but surface contamination on CCL is very serious. In addition, stabilizer solution also played an important role to control the surface contamination. As a result of research, the etching solution containing 0.04 M of acetic acid, 0.1 M of APS with 4 g/L of stabilizer solution(ST-1) was best to improve adhesion between CCL and photoresist resin as well as showed the most clean and rough surface with the etching rate of $0.37{\mu}m/min$.

• Clean Technology
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• v.24 no.3
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• pp.175-182
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• 2018

In this research, we investigated the cleanliness by optimizing the water content of the aqueous stripper in fluidic strip process. The stripping properties of the photoresist with optimized aqueous stripper were compared with the commercial organic stripper. The stripping performance was evaluated by electrical and optical characteristics on the surface of the transparent electrode that compare with stripped the transparent electrode surface and the rare surface before patterning by the photoresist. As a result of the photoresist stripping process of the organic stripper and the aqueous stripper optimized for water content, the aqueous stripper exhibited better electrical and optical characteristics than the organic stripper. In the case of the fluidic strip process with organic stripper, the photoresist dissolves in the stripper solution during stripping which can cause re-adsorption by contamination. Whereas that the aqueous stripper under development seems to decrease the photoresist dissolution in the stripper solution. Because the cyclodextrin contained in the stripper captures organic photoresist into hall of cyclodextrin which stripped through swelling and tearing. The photoresist residue captured by the cyclodextrin can be filtered. After the fluidic stripping process by different chemical stripping mechanism, the cleanliness of the organic stripper and aqueous stripper was compared and analyzed.