• Title, Summary, Keyword: Photoresist

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A Study on the Application of a Developing Condition for the Monobath (Monobath 의 처리조건에 대한 실용성 연구)

  • 강현덕
    • Journal of the Korean Printing Society
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    • v.12 no.1
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    • pp.47-65
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    • 1994
  • Synthetic photoresist have partially displaced the natural materials, but bichromated casein have remained in use until recently at etching industry such as chemical milling. The object of this paper is that the mutual relations among factors and suitable latitude in pattern formation or etching process when is to be applied the casein ammonium bichromate photoresist.

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A Study on HEMT Device Process (Part I. Lift-off Process for the Metallization) (HEMT 소자 공정 연구 (Part 1. 금속박막 형성을 위한 Lift-off 공정연구))

  • 이종람;박성호;김진섭;마동성
    • Journal of the Korean Institute of Telematics and Electronics
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    • v.26 no.10
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    • pp.1535-1544
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    • 1989
  • The overhang structure of photoresist in optical lithography was studied for the metallization of GaAs-related devices throughout lift-off method. Optical contact aligner with a dose of 8.5 m J/cm\ulcornerand with a wavelength of 300mm was used for ultraviolet exposure of single layer of S1400-27 photoresist. The overhang thickness shows a linear relationship with the soaking time in monochlorobenzene, which its magnitude becomes high at elevated softbake temperature. Such process conditions as a low softbake temperature, a long monochlorohbenzene soaking time and a little exposed energy make the development rate of photoresist lower. The optimum process conditions to obtain a target line-width, which include an appropriate overhang structure such as complete separation between the sidewall of photoresist pattern and the deposited metal edge, are determined as the softbake temperature of 64-74\ulcornerC, the monochlorobenzene soaking time of 10-15min, the ultraviolet exposure time of 70-100sec and the development time of 50-80sec.

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Poly[(1-methacryloyloxy-4-tosyloxycyclohexane)-co-(tert-butyl methacrylate)] as an acid amplifying photoresist (산 증식형 포토레지스트로 Poly($MTC_{10}-co-tBMA_{90}$)의 합성 및 특성 연구)

  • Kuen, Kyoung-A;Lee, Eun-Ju;Lim, Kwon-Taek;Jeong, Yong-Seok;Jeong, Yeon-Tae
    • Journal of the Korean Printing Society
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    • v.20 no.2
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    • pp.131-140
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    • 2002
  • Chemically amplified deep UV(CA-DUV) resists are typically based on a combination of an acid labile polymer and a photoacid generator(PAG) but acid amplification type photoresist is formulated by addition of the acid amplifiers to chemically amplified resist system(CAPs). We developed acid amplifiers base on cyclohexanediol such as 1-methacryloyloxy-4-tosyloxy cyclohexane(MTC) and poly(MTC$_{10}$-co-tBMA$_{90}$)(P-1) to enhance photosensitivity. P-1 is a copolymer of tert-butyl methacrylate and MTC as a positive working photoresist based on polymeric acid amplifier in order to enhance photosensitivity and simplify the process of fomulating a photoresist. P-1 exhibited 2X higher photosensitivity compared with PtBMA. The acid amplifiers showed reasonable thermal stability for resist processing temperature and higher photosensitivity compared with chemically amplified resist.

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The Fabrication of Microlenses by Photoresist Melting Method (Photoresist 용융법을 이용한 미세렌즈 행렬 제작)

  • 주영구;송현우;이용희;송석호
    • Korean Journal of Optics and Photonics
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    • v.5 no.2
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    • pp.298-303
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    • 1994
  • Microlens arrays are fabricated by melting "islands" of thick photoresist on a glass substrate. Microlenses with diameters $25\mu\textrm{m}$, $50\mu\textrm{m}$, $100\mu\textrm{m}$are made. Their surface profiles are obtained by a scanning electron microscope and a mechanical surface profilometer. The wavefront of the microlenses is measured by phase-shifting techniques using a Mach-Zehnder-like configuration. Thereby wavefront errors, focal lengths. point spread functions are obtained. The microlens with the diameter of $100\mu\textrm{m}$ has focal length of $164\mu\textrm{m}$ and spot diameter is less than $5\mu\textrm{m}$..

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Synthesis and Photosensitive Characterization of NDAS Derivatives (NDAS 유도체의 합성과 감광특성)

  • Lee, Ki-Chang;Choi, Sung-Yong;Bae, Nam-Kyoung;Yoon, Cheol-Hun;Hwang, Sung-Kwy
    • Journal of the Korean Applied Science and Technology
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    • v.13 no.3
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    • pp.145-153
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    • 1996
  • Naphthoquinone-1,2-diazide-5-sulfonyl[NDAS] derivatives members of quinone diazide compound that are utilizable as photosensitive polymer material were synthesized, and photoresist were prepared by mixing these derivatives with m-cresol novolak(a matrix resin) at various weight ratios. Photosensitive characteristics of photoresist were studied by examining UV and IR, relative sensitivity using a Gray scale method, and SEM to analyze if they can be used as photosensitive material in printing process. Experimental results showed that, by UV, NDAS derivatives were photoconverted and developer-soluble photoresist were produced. The mixing ratio of 1:4(by mass) of NDAS+p-ydroxybenzophenone+sensitizer and m-cresol novolak gave rise to the highest dissolution rate. In addition, photoresist obtained at this condition resulted in the most superior sensitivity and contrast.

Development on the High Concentration Ozone Generator System for the Semiconductor Photoresist Strip Process (반도체 감광막 제거공정 적용을 위한 고농도 오존발생장치 개발)

  • Son, Young-Su;Ham, Sang-Yong
    • The Transactions of the Korean Institute of Electrical Engineers C
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    • v.55 no.12
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    • pp.591-596
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    • 2006
  • we have been developed on the ultra high concentration ozone generator system which is the core technology in the realization of the semiconductor photoresist strip process using the ozone-vapor chemistry. The proposed ozone generator system has the structure of the surface discharge type which adopt the high purity ceramic dielectric tube. We investigate the performance of the proposed ozone generator system experimentally and the results show that the system has very high ozone concentration characteristics of $19.7[wt%/O_2]$ at the flow rate of $0.3[{\ell}/min]$ of each discharge cell. As a result of the silicon wafer photoresist strip test, we obtained the strip rate of about 400[nm/min] at the ozone concentration of $16[wt%/O_2]$ and flow rate of $8[{\ell}/min]$. So, we confirmed that it's possible to use the proposed high concentration ozone generator system for the ozone-vapor photoresist strip process in the semiconductor and FPD industry.

Photoresist spray coating for three-dimensional micro structure (3차원 마이크로 구조를 위한 포토레지스트 스프레이 코팅)

  • Kim, Do-Wook;Eun, Duk-Su;Bae, Young-Ho;Yu, In-Sik;Suk, Chang-Gil;Jeong, Jong-Hyun;Cho, Chan-Seop;Lee, Jong-Hyun
    • Journal of Sensor Science and Technology
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    • v.15 no.3
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    • pp.153-157
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    • 2006
  • This paper presents the method for three-dimensional micro structure with photoresist spray coating system. The system consists of a high temperature rotational chuck, ultrasonic spray nozzle module, angle control module and nozzle moving module. Spray coating system is effected by several parameters such as the solid contents, the dispensed volume, the scanning speed of the spray nozzle and the wafer of dimension. The photoresist (AZ 1512) has been coated on the three-dimensional micro structure by spray coating system and the characteristics have been evaluated.

A Study on Photoresist Stripping Using High Density Oxygen Plasma (고밀도 산소 플라즈마를 이용한 감광제 제거공정에 관한 연구)

  • Jung, Hyoung-Sup;Lee, Jong-Geun;Park, Se-Geun;Yang, Jae-Kyun
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.11 no.2
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    • pp.95-100
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    • 1998
  • A helical inductively coupled plasma asher, which produces low energy and high density plasma, has been built and investigated for photoresist stripping process. Oxygen ion density in the order of $10^{11}/cm^3$ is measured by Langmuir probe, and higher oxygen radical density is observed by Optical Emission Spectrometer. As RF source power is increased, the plasma density and thus photoresist stripping rate are increased. Independent RF bias power to the wafer stage provides a dc bias to the wafer and an ability to add the ion assisted reaction. At 1 KW of the source power, the coupling mechanism of the RF power to the plasma is changed from the inductive mode to the capacitive one at about 1 Torr. This change causes the plasma density and ashing rate decreases abruptly. The critical pressure of the mode change becomes larger with larger RF power.

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