• Title, Summary, Keyword: Photoresist

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Photolithography process investment of water soluble photoresist and Organic thin film by using it. (수용성 포토레지스트와 이를 이용한 유기 박막의 photolithography 공정 연구)

  • Kim, Kwang-Hyun;Kim, Gun-Ju;Ryu, Ki.-Sung;Kim, Tae-Ho;Song, Jung-Kun
    • Proceedings of the IEEK Conference
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    • pp.497-500
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    • 2004
  • In this paper, we developed a new photolithography process which used a water-soluble photoresist instead of organic solvent soluble photoresist, defined pentacene thin film. And pentacene OTFTs were fabricated with the water- soluble photolithography process.

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A Study on the Ablation of AZ5214 and SU-8 Photoresist Processed by 355nm UV Laser (355nm UV 레이저를 이용한 AZ5214와 SU-8 포토레지스트 어블레이션에 관한 연구)

  • Oh, J.Y.;Shin, B.S.;Kim, H.S.
    • Journal of Korean Society of Laser Processing
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    • v.10 no.2
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    • pp.17-24
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    • 2007
  • We have studied a laser direct writing lithography(LDWL). This is more important to apply to micro patterning using UV laser. We demonstrate the possibility of LDWL and construct the fabrication system. We use Galvano scanner to process quickly micro patterns from computer data. And laser beam is focused with $F-{\theta}$ lens. AZ5214 and SU-8 photoresist are chosen as experimental materials and a kind of well-known positive and negative photoresist respectively. Laser ablation mechanism depends on the optical properties of polymer. In this paper, therefore we investigate the phenomenon of laser ablation according to the laser fluence variation and measure the shape profile of micro patterned holes. From these experimental results, we show that LDWL is very useful to process various micro patterns directly.

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Fabrication of Tip of Probe Card Using MEMS Technology (MEMS 기술을 이용한 프로브 카드의 탐침 제작)

  • Lee, Keun-Woo;Kim, Chang-Kyo
    • Journal of Institute of Control, Robotics and Systems
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    • v.14 no.4
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    • pp.361-364
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    • 2008
  • Tips of probe card were fabricated using MEMS technology. P-type silicon wafer with $SiO_2$ layer was used as a substrate for fabricating the probe card. Ni-Cr and Au used as seed layer for electroplating Ni were deposited on the silicon wafer. Line patterns for probing devices were formed on silicon wafer by electroplating Ni through mold which formed by MEMS technology. Bridge structure was formed by wet-etching the silicon substrate. AZ-1512 photoresist was used for protection layer of back side and DNB-H100PL-40 photoresist was used for patterning of the front side. The mold with the thickness of $60{\mu}m$ was also formed using THB-120N photoresist and probe tip with thickness of $50{\mu}m$ was fabricated by electroplating process.

A Study on the Realization of the High Efficiency LCD Photoresist Removal Technology (고효율 LCD 감광막 제거기술 구현 연구)

  • Son, Young-Su;Ham, Sang-Yong;Kim, Byoung-Inn;Lee, Sung-Hwee
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.20 no.11
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    • pp.977-982
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    • 2007
  • The realization of the photoresist(PR) removal method with vaporized water and ozone gas mixture has been studied for the LCD TFT array manufacturing. The developed PR stripper uses the water boundary layer control method based on the high concentration ozone production technology. We develop the prototype of PR stripper and experiment to find the optimal process parameter condition like as the ozone gas flow/concentration, process reaction time and thin boundary layer formation. As a results, we realize the LCD PR strip rate over the 0.4 ${\mu}m/min$ and this PR removal rate is more than 5 times higher than the conventional immersion type ozonized water process.

Fabrication of 3-D Structures by Inclined and Rear-side Exposures (선택적 경사 노광과 후면 노광에 의한 3차원 구조물의 제작)

  • 이준섭;신현준;문성욱;송석호;김태엽
    • The Transactions of the Korean Institute of Electrical Engineers C
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    • v.53 no.1
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    • pp.47-52
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    • 2004
  • 3D microstructures with different side-wall angles and different scales are fabricated by both methods of inclined exposure and rear-side exposure at each of selected areas on a same substrate. Conventional methods of inclined exposure are used to make side-walls with a same inclined angle on one substrate and to get a scale error due to front-side exposure through thick photoresist layer, But, by using the proposed method, we are able to fabricate 3D microstructures on a same substrate with various side-wall angles and accurate dimensions as the original design. In the rear-side exposure, UV exposure light reflects from the chromium mask pattern after passing through the thick photoresist layer, resulting in fabrication of well-defined, inclined 3D structures inside the thick photoresist layer.

Characterization of Negative Photoresist Processing by Statistical Design of Experiment (DOE)

  • Mun Sei-Young;Kim Gwang-Beom;Soh Dea-Wha;Hong Sang Jeen
    • Journal of information and communication convergence engineering
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    • v.3 no.4
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    • pp.191-194
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    • 2005
  • SU-8 is a epoxy based photoresist designed for MEMS applications, where a thick, chemically and thermally stable image are desired. However SU-8 has proven to be very sensitive to variation in processing variables and hence difficult to use in the fabrication of useful structures. In this paper, negative SU-8 photoresist processed has been characterized in terms of delamination, based on a full factorial designed experiment. Employing the design of experiment (DOE), a process parameter is established, and analyzing of full factorial design is generated to investigate degree of delamination associated with three process parameters: post exposure bake (PEB) temperature, PEB time, and exposure energy. These results identify acceptable ranges of the three process variables to avoid delamination of SU-8 film, which in turn might lead to potential defects in MEMS device fabrication.

Characterization of Photoresist Processing by Statistical Design of Experiment (DOE)

  • Kim, Gwang-Beom;Park, Jae-Hyun;Soh, Dae-Wha;Hong, Sang-Jeen
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • pp.43-44
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    • 2005
  • SU-8 is a epoxy based photoresist designed for MEMS applications, where a thick, chemically and thermally stable image is desired. But SU-8 has proven to be very sensitive to variation in processing variables and hence difficult to use in the fabrication of useful structures. In this paper, negative SU-8 photoresist processed has been characterized in terms of delamination. Based on a full factorial designed experiment. Employing the design of experiment (DOE), a process parameter is established, and analyzing of full factional design is generated to investigate degree of delamination associated with three process parameters: post exposure bake (PEB) temperature, PEB time, and exposure energy. These results identify acceptable ranges of the three process variables to avoid delamination of SU-8 film, which in turn might lead to potential defects in MEMS device fabrication.

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Forming a Fresnel Zone Lens: Effects of Photoresist on Digital-micromirror-device Maskless Lithography with Grayscale Exposure

  • Huang, Yi-Hsiang;Jeng, Jeng-Ywan
    • Journal of the Optical Society of Korea
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    • v.16 no.2
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    • pp.127-132
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    • 2012
  • This study discusses photoresist forming using a composite grayscale to fabricate a Fresnel lens. Grayscale lithography is a common production method used to facilitate the forming of lenses with different curvatures and depths. However, this approach is time consuming and expensive. This study proposes a method for overcoming these obstacles by integrating a digital micromirror device and microscope to supplant the traditional physical grayscale mask. This approach provides a simple and practical maskless optical lithography system. According to the results, the two adjacent grayscales displayed substantial differences between the high grayscale and influence the low grayscale that ultimately affected photoresist formation. Furthermore, we show that change of up to 150% in the slope can be achieved by changing the grayscale gradient in the central zone and the ring profile. The results of the optical experiment show a focus change with different gray gradients.

Optimization of Laser Photolithography Micromachining Technique based on Taguchi Method (다구찌 방법을 이용한 레이저 포토리소그라피 미세패턴가공 기술의 최적화)

  • Baek, Nam-Kook;Kim, Dae-Eun
    • Proceedings of the KSME Conference
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    • pp.871-875
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    • 2001
  • Laser photolithography technique is useful for fabricating micro-patterns of silicon wafers. In this work, the laser photolithography micromachining technique is optimized based on Taguchi method. Sensitivity analysis was performed using laser scanning speed and laser power level as the parameters. The results show that for the photoresist used in this work, a laser scan speed of $70{\mu}m/s$ at 50mW laser power gives the best result.

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Optimization of down stream plasma ashing process (감광제 건식제거공정의 최적화)

  • 박세근;이종근
    • Electrical & Electronic Materials
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    • v.9 no.9
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    • pp.918-924
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    • 1996
  • A downstream oxygen plasma is generated by capacitively coupled RF power and applied to photoresist stripping. Stripping rate (ashing rate) is measured in terms of RF power, chamber pressure, oxygen flow rate and temperature. Ashing reaction is thermally activated and depends on oxygen radical density. The ashing process is optimized to have the high ashing rate, good uniformity and minimal plasma damage using a statistical method.

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