• Title, Summary, Keyword: Photoresist

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Self-Aligned Offset Poly-Si TFT using Photoresist reflow process (Photoresist reflow 공정을 이용한 자기정합 오프셋 poly-Si TFT)

  • Yoo, Juhn-Suk;Park, Cheol-Min;Min, Byung-Hyuk;Han, Min-Koo
    • Proceedings of the KIEE Conference
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    • pp.1582-1584
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    • 1996
  • The polycrystalline silicon thin film transistors (poly-Si TFT) are the most promising candidate for active matrix liquid crystal displays (AMLCD) for their high mobilities and current driving capabilities. The leakage current of the poly-Si TFT is much higher than that of the amorphous-Si TFT, thus larger storage capacitance is required which reduces the aperture ratio fur the pixel. The offset gated poly-Si TFTs have been widely investigated in order to reduce the leakage current. The conventional method for fabricating an offset device may require additional mask and photolithography process step, which is inapplicable for self-aligned source/drain ion implantation and rather cost inefficient. Due to mis-alignment, offset devices show asymmetric transfer characteristics as the source and drain are switched. We have proposed and fabricated a new offset poly-Si TFT by applying photoresist reflow process. The new method does not require an additional mask step and self-aligned ion implantation is applied, thus precise offset length can be defined and source/drain symmetric transfer characteristics are achieved.

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Fabrication of $100{\mu}m$ High Metallic Structure Using Negative Thick Photoresist and Electroplating (Negative Thick Photoresist를 이용한 $100{\mu}m$ 높이의 금속 구조물의 제작에 관한 연구)

  • Chang, Hyun-Kee;Kim, Yong-Kweon
    • Proceedings of the KIEE Conference
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    • pp.2541-2543
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    • 1998
  • This paper describes the fabrication process to fabricate metallic structure of high aspect ratio using LlGA-like process. SU-8 is used as an electroplating mold. SU-8 is an epoxy-based photoresist, designed for ultrathick PR structure with single layer coating [1,2]. We can get more than $100{\mu}m$ thick layer by single coating with conventional spin coater, and applying multiple coating can make thicker layers. In the experiments, we used different kinds of SU-8, having different viscosity. To optimize the conditions for mold fabrication process, experiments are performed varying spinning time and speed, soft-bake, develop and PEB (Post Expose Bake) condition. With the optimized condition, minimum line and space of $3{\mu}m$ pattern with a thickness of $40{\mu}m$ and $4{\mu}m$ pattern with a thickness of $130{\mu}m$ were obtained. Using the patterned PR as a plating mold, metallic structure was fabricated by electroplating. We have fabricated a electroplated nickel comb actuator using SU-8 as plating mold. The thickness of PR mold is $45{\mu}m$ and that of plated nickel is$40{\mu}m$. Minimum line of the mold is $5{\mu}m$. Patterned metallic layer or polymer layer, which has selectivity with the structural plated metallic layer, can be used as sacrificial layer for fabrication of free-standing structure.

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Laser Direct Patterning of Photoresist Layer for Halftone Dots of Gravure Printing Roll (그라비아 인쇄물의 망점 형성을 위한 포토레지스터 코팅층의 레이저 직접 페터닝)

  • Seo, Jung;Lee, Je-Hoon;Han, Yu-Hee
    • Journal of Korean Society of Laser Processing
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    • v.3 no.2
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    • pp.35-43
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    • 2000
  • Laser direct patterning of the coated photoresit (PMER-NSG31B) layer was studied to make halftone dots on gravure printing roll. The selective laser hardening of photoresist by Ar-ion laser(wavelength : 333.6nm∼363.8nm) was controlled by the A/O modulator. The coating thickness in the range of 5㎛∼11㎛ could be obtained by using the up-down directional moving device along the vertically located roll. The width, thickness and hardness of the hardened lines formed under laser power of 200∼260㎽ and irradiation time of 4.4∼6.6$\mu$ sec/point were investigated after developing. The hardened width increased according to the increase of coating thickness. Though the hardened thickness was changed due to the effect of the developing solution, the hardened layer showed good resistance to the scratching of 2H pencil. Also, the hardened minimum line widths of 10㎛ could be obtained. The change of line width was also found after etching, and the minimum line widths of 6㎛ could be obtained. The hardened lines showed the good resistance to the etching solution. Finally, the experimental data could be applied to make gravure halftone dots using the developed imaging process, successfully.

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Gravure Halftone Dots by Laser Direct Patterning

  • Jeong Suh;Lee, Jae-Hoon
    • International Journal of Precision Engineering and Manufacturing
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    • v.3 no.1
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    • pp.26-32
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    • 2002
  • Laser direct patterning of the coated photoresist (PMER-NSG31B) layer was studied to make halftone dots on the gravure printing roll. The selective laser hardening of the photoresist by Ar-ion laser(wavelength: 333.6∼363.8 nm) was controlled by the A/O modulator. The coating thickness in the range of 5∼11㎛ could be obtained by using the up-down directional moving device along the vertically located roll. The width, thickness and hardness of the hardened lines farmed under the laser power of 200∼260mW and irradiation time of 4.4∼6.6 $\mu$ sec/point were investigated after developing. The hardened width increased as the coating thickness increased. Though the hardened thickness was changed due to the effect of the developing solution, the hardened layer showed good resistance to the scratching of 2H pencil. Also, the hardened minimum line width of 10㎛ could be obtained. The change of line width was also found after etching, and the minimum line widths of 6㎛ could be obtained. The hardened lines showed the good resistance to the etching solution. Finally, the experimental data could be applied to make gravure halftone dots using the developed imaging process, successfully.

Formation of Fine Pitch Solder Bumps on Polytetrafluoroethylene Printed Circuit Board using Dry Film Photoresist (Dry Film Photoresist를 이용한 테프론 PCB 위 미세 피치 솔더 범프 형성)

  • Lee Jeong Seop;Ju Geon Mo;Jeon Deok Yeong
    • Proceedings of the International Microelectronics And Packaging Society Conference
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    • pp.169-173
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    • 2003
  • We demonstrated the applicability of dry film photoresist (DFR) in photolithography process for fine pitch solder bumping on the polytetrafluoroethylene (PTFE/Teflon) printed circuit board (PCB). The copper lines were formed with $100\;{\mu}m$ width and $18\;{\mu}m$ thickness on the PTFE test board, and varying the gaps between two copper lines in a range of $100-200\;{\mu}m$. The DFRs of $15\;{\mu}m$ thickness were laminated by hot roll laminator, by varying laminating temperature from $100^{\circ}C\;to\;150^{\circ}C$ and laminating speed. We found the optimum process of DFR lamination on PTFE PCB and accomplished the formation of indium solder bumps. The optimum lamination condition was temperature of $150^{\circ}C$ and speed of about 0.63 cm/s. And the smallest size of indium solder bump was diameter of $50\;{\mu}m$ with pitch of $100\;{\mu}m$.

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A Study on Photoresist Stripping and Damage Using Atmospheric Pressure Plasma (대기압 플라즈마를 이용한 감광제 제거 공정과 damage에 관한 연구)

  • Hwang, In-Uk;Yang, Seung-Kook;Song, Ho-Young;Park, Se-Geun;O, Beom-Hoan;Lee, Seung-Gol;Lee, El-Hang
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • pp.152-155
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    • 2003
  • Ashing of photoresist was investigated in dielectric barrier discharges in atmospheric pressure by changing applied voltage, frequency, flow rate. we analyzed the plasma by Optical Emission Spectroscopy(OES) to monitor the variation of active oxygen species. Another new peaks of oxygen radical is observed by addition of argon gas. This may explain the increase in ashing rate with argon addition. With the results of Optical Emission Spectroscopy(OES), we can find the optimized ashing conditions. MIS capacitor for monitoring charging damage by the plasma was also studied. The results suggest the dielectric barrier discharges(DBD) can be an efficient, alternative Plasma source for general surface processing.

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Synthesis and Characterization of Photosensitive Naphthoquinonediazide-sulfonyl Derivatives (나프토 퀴논 디아지드 유도체의 합성 및 그 감광 특성)

  • Joo, So-Young;Hong, Sung-Il
    • Applied Chemistry for Engineering
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    • v.1 no.2
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    • pp.116-123
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    • 1990
  • Synthesis and characterization of photosensitive orthonaphthoquinonediazide-sulfonyl derivatives were studied. These photoactive compounds underwent a UV induced transformation to the base-soluble photoproduct. The photoresists were prepared using these photoactive compounds with low molecular weight m-cresol novolacs as matrix resin. And photosensitive characteristics of the photoresists were studied. 3, 4, 5-Trihydroxy-benzophenone with bulky resonance structure increased the sensitivity and the solubility rate of the exposed region. The mixture of PAC and matrix resin having 3:8 weight ratio had the moderate rate of dissolution in the developer. The photoresist using these conditions showed the best snsitivity and contrast under the fixed conditions.

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Characteristics of Poly(methylphenyl)silane Photoreists (Poly(methylpheny) Silane Photoresist의 특성)

  • Kang, Doo-Whan;Chung, Nak-Jin
    • Applied Chemistry for Engineering
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    • v.1 no.2
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    • pp.161-167
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    • 1990
  • Polymethylphenylsilane(PMPS) was synthesized with methylphenyldichlorosilane using metal sodium. Various sample coated on quartz plate were exposed and the yield of residual film was calculated. To obtain the fine image forming after developing and drying, optical transmittance characterization have to be considered. Exposure is described by three optical parameters X, Y, and Z. There parameters are normally determined from optical transmittance measurements of exposed PMPS films. Z parameter was determined from the initial slope of a transmittance according to exposure time. This set of function parameters provided a complete description of photoresist exposure and development and became the basis for the theoretical process models.

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Numerical Investigation of Factors affecting Photoresist Stripping Process on the ITO Surface using the Spray Method (노즐 분사 방식의 ITO 표면 포토레지스트 박리과정 요인의 수치해석)

  • Kim, Joon Hyun;Lee, Joon Hyuck;Kang, Tae Seong;Joo, Gi-Tae;Kim, Young Sung;Jeong, Byung Hyun;Lee, Dae Won
    • Journal of The Korean Society of Manufacturing Technology Engineers
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    • v.26 no.2
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    • pp.158-165
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    • 2017
  • This study investigated spraying factors applicable to stripper usage. Cyclodextrine, as environment-friendly material, was included in the stripper composition. An efficient spray technology was applied for the Photoresist strip. For industrial applications, stripping requires a temperature below $50^{\circ}C$, a strip time within 50 s, and chemically stable activation. Spraying factors were organized considering many conditions-orifice diameter, working pressure (inlet speed), spray distance, and spray angle. For commercial practicability, the flow rate was limited to 3 L/min. The nozzle parameters were nozzle orifice diameter of 1.8-2.2 mm, spray distance of 40-60 mm, and injection speed of 0.7-1.2 m/s. Through the thermal spray movement of the fluid, the thermal boundary layer for a chemical reaction just above the ITO-glass surface and momentum region for sufficient agitation (above 4 m/s) was achieved.

Removal of Photoresist Mask after the Cl2/HBr/CF4 Reactive Ion Silicon Etching (Cl2/HBr/CF4 반응성 이온 실리콘 식각 후 감광막 마스크 제거)

  • Ha, Tae-Kyung;Woo, Jong-Chang;Kim, Gwan-Ha;Kim, Chang-Il
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.23 no.5
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    • pp.353-357
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    • 2010
  • Recently, silicon etching have received much attention for display industry, nano imprint technology, silicon photonics, and MEMS application. After the etching process, removing of etch mask and residue of sidewall is very important. The investigation of the etched mask removing was carried out by using the ashing, HF dipping and acid cleaning process. Experiment shows that oxygen component of reactive gas and photoresist react with silicon and converting them into the mask fence. It is very difficult to remove by using ashing or acid cleaning process because mask fence consisted of Si and O compounds. However, dilute HF dipping is very effective process for SiOx layer removing. Finally, we found optimized condition for etched mask removing.