• Title, Summary, Keyword: Power oscillator

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A Study of Phase Noise Due to Power Supply Noise in a CMOS Ring Oscillator

  • Park Se-Hoon
    • Journal of information and communication convergence engineering
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    • v.3 no.4
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    • pp.184-186
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    • 2005
  • The effect of power supply noise on the phase noise of a ring oscillator is studied. The power supply noise source in series with DC power supply voltage is applied to a 3 stage CMOS ring oscillator. The phase noise due to the power supply noise is modeled by the narrow band phase modulation. The model is verified by the fact that the spectrum of output of ring oscillator has two side bands at the frequencies offset from the frequency of the ring oscillator by the frequency of the power supply noise source. Simulations at several different frequency of the power supply noise reveals that the ring oscillator acts as a low pass filter to the power supply noise. This study, as a result, shows that the phase noise generated by the power supply noise is inversely proportional to the frequency offset from the carrier frequency.

A Class E Power Oscillator for 6.78-MHz Wireless Power Transfer System

  • Yang, Jong-Ryul
    • Journal of Electrical Engineering and Technology
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    • v.13 no.1
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    • pp.220-225
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    • 2018
  • A class E power oscillator is demonstrated for 6.78-MHz wireless power transfer system. The oscillator is designed with a class E power amplifier to use an LC feedback network with a high-Q inductor between the input and the output. Multiple capacitors are used to minimize the variation of the oscillation frequency by capacitance tolerance. The gate and drain bias voltages with opposite characteristics to make the frequency shift of the oscillator are connected in a resistance distribution circuit located at the output of the low drop-out regulator and supplied bias voltages for class E operation. The measured output of the class E power oscillator, realized using the co-simulation, shows 9.2 W transmitted power, 6.98 MHz frequency and 86.5% transmission efficiency at the condition with 20 V $V_{DS}$ and 2.4 V $V_{GS}$.

A Low Power Multi Level Oscillator Fabricated in $0.35{\mu}m$ Standard CMOS Process ($0.35{\mu}m$ 표준 CMOS 공정에서 제작된 저전력 다중 발진기)

  • Chai Yong-Yoong;Yoon Kwang-Yeol
    • The Transactions of the Korean Institute of Electrical Engineers C
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    • v.55 no.8
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    • pp.399-403
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    • 2006
  • An accurate constant output voltage provided by the analog memory cell may be used by the low power oscillator to generate an accurate low frequency output signal. This accurate low frequency output signal may be used to maintain long-term timing accuracy in host devices during sleep modes of operation when an external crystal is not available to provide a clock signal. Further, incorporation of the analog memory cell in the low power oscillator is fully implementable in a 0.35um Samsung standard CMOS process. Therefore, the analog memory cell incorporated into the low power oscillator avoids the previous problems in a oscillator by providing a temperature-stable, low power consumption, size-efficient method for generating an accurate reference clock signal that can be used to support long sleep mode operation.

A Low Close-in Phase Noise 2.4 GHz RF Hybrid Oscillator using a Frequency Multiplier

  • Moon, Hyunwon
    • Journal of the Korea Industrial Information Systems Research
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    • v.20 no.1
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    • pp.49-55
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    • 2015
  • This paper proposes a 2.4 GHz RF oscillator with a very low close-in phase noise performance. This is composed of a low frequency crystal oscillator and three frequency multipliers such as two doubler (X2) and one tripler (X3). The proposed oscillator is implemented as a hybrid type circuit design using a discrete silicon bipolar transistor. The measurement results of the proposed oscillator structure show -115 dBc/Hz close-in phase noise at 10 kHz offset frequency, while only dissipating 5 mW from a 1-V supply. Its close-in phase noise level is very close to that of a low frequency crystal oscillator with little degradation of noise performance. The proposed structure which is consisted of a low frequency crystal oscillator and a frequency multiplier provides new method to implement a low power low close-in phase noise RF local oscillator.

Development of Millimeter-Wave band PLL System using YIG Oscillator (YIG 발진기를 이용한 밀리미터파대역의 PLL 시스템 개발)

  • Lee, Chang-Hoon;Kim, K.D.;Chung, M.H.;Kim, H.R.;Han, S.T.
    • Proceedings of the KIEE Conference
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    • pp.116-119
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    • 2005
  • In this paper, we propose the PLL system of the local oscillator system for the millimeter wave band's radio astronomy receiving system. The development of the proposed local oscillator system based on the YIG oscillator VCO with 26.5 ${\sim}$ 40GHz specification. This system consists of the oscillator part including the YIG VCO, the harmonic mixer, and the isolator, the RF processing part including the triplexer, limiter, and RF discrimination processor. and the PLL system including YIG modulator and controller. Based on this configuration. we verify the frequency and power stability of the developed local oscillator system according to some temperature variation. From this test results we confirm the stable output frequency and power characteristic performance of the developed La system at constant temperature.

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Design and Implementation of a Chaotic Oscillator for UWB (UWB용 카오스 오실레이터의 설계 및 구현)

  • Kang, Sang-Gee
    • Journal of the Korea Institute of Information and Communication Engineering
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    • v.12 no.12
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    • pp.2136-2139
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    • 2008
  • Chaotic oscillators can generate wide-band signals and the spectrum characteristics of the wide-band signals are not changed by switching on and off the output power of the oscillators. When communication systems use a chaotic oscillator, the communication system need not a local oscillator and a mixer used in conventional transceivers. Therefore the configuration of a communication system using a chaotic oscillator is simple and have the characteristics of low-power consumption. In this paper we design and implement a chaotic oscillator. And the test results of the implemented chaotic oscillator for UWB systems are presented. The implemented chaotic oscillator has -8.11dBm of the output power with 500MHz channel bandwidth at 3.4GHz of the center frequency and has about 410MHz of -10dB bandwidth.

A 2.4 GHz Low-Noise Coupled Ring Oscillator with Quadrature Output for Sensor Networks (센서 네트워크를 위한 2.4 GHz 저잡음 커플드 링 발진기)

  • Shim, Jae Hoon
    • Journal of Sensor Science and Technology
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    • v.28 no.2
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    • pp.121-126
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    • 2019
  • The voltage-controlled oscillator is one of the fundamental building blocks that determine the signal quality and power consumption in RF transceivers for wireless sensor networks. Ring oscillators are attractive owing to their small form factor and multi-phase capability despite the relatively poor phase noise performance in comparison with LC oscillators. The phase noise of a ring oscillator can be improved by using a coupled structure that works at a lower frequency. This paper introduces a 2.4 GHz low-noise ring oscillator that consists of two 3-stage coupled ring oscillators. Each sub-oscillator operates at 800 MHz, and the multi-phase signals are combined to generate a 2.4 GHz quadrature output. The voltage-controlled ring oscillator designed in a 65-nm standard CMOS technology has a tuning range of 800 MHz and exhibits the phase noise of -104 dBc/Hz at 1 MHz offset. The power consumption is 13.3 mW from a 1.2 V supply voltage.

A Study on Configuration of Extremely Low Phase Noise Oscillator Circuit

  • Sakuta, Yukinori;Arai, Yuji;Sekine, Yoshifumi
    • Proceedings of the IEEK Conference
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    • pp.1196-1199
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    • 2002
  • The low phase noise frequency source to be used for measurements and so on realizes by oscillator having highly output signal power against output noise power. SAW devices can be used by high power than BAW devices. So we examine on configuration of SAW oscillator circuits with the power gain. In this paper we shall discuss a configuration of oscillator circuit to obtain an extremely low phase noise and an oscillator operating at a non-reactive frequency of SAW resonator.

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A Evaluation of the Maximum Power of the 94 GHz Gunn Diode Based on the Measured Oscillation Power (발진출력 측정을 통한 94 GHz Gunn Diode의 최대 전력 조사)

  • Lee, Dong-Hyun;Yeom, Kyung-Whan;Jung, Myung-Suk;Chun, Young-Hoon;Kang, Yeon-Duk;Han, Ki-Woong
    • The Journal of Korean Institute of Electromagnetic Engineering and Science
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    • v.26 no.5
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    • pp.471-482
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    • 2015
  • In this paper, design and implementation of the 94 GHz Gunn oscillator and the evaluation of the maximum power of the Gunn diode used in the oscillator are presented. The 94 GHz Gunn oscillator is used InP Gunn diode and designed employing a WR-10 waveguide. The designed oscillator is fabricated through machining and its performance is measured. The fabricated oscillator shows an oscillation frequency of 95 GHz, output power of 12.64 dBm, and phase noise of -92.7 dBc/Hz at 1 MHz offset frequency. To evaluation the maximum power of the InP Gunn diode used in oscillator, the oscillator structure is modified to a structure having a diaphram. The height of thick diaphram which is used in the oscillator is varied. As a result, an oscillator has several different load impedances, which makes it possible to plot $G_L-V^2$ plot at the post plane. Using the $G_L-V^2$ plot, the maximum power of used Gunn diode including post is computed to be 16.8 dBm. Furthermore using the shorted and zero bias Gunn diode, the post loss used for DC biasing can be computed. Using the two losses, The maximum power of a InP Gunn diode is computed to be 18.55 dBm at 95 GHz. This result is close to a datasheet.

Theory of Generation Linewidth in Spin-torque Nano-sized Auto-oscillators

  • Kim, Joo-Von;Tiberkevich, Vasil;Slavin, Andrei N.
    • Journal of Magnetics
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    • v.12 no.2
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    • pp.53-58
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    • 2007
  • Theory of the generation linewidth of a current-driven spin-torque magnetic nano-oscillator in the presence of thermal fluctuations has been developed and a simple analytical formula for the generation linewidth in the supercritical regime of generation has been derived. It is shown that the strong dependence of the oscillator frequency on the precession power leads to substantial broadening of the generation linewidth of a spin-torque oscillator compared to the case of a linear oscillator, i.e. an oscillator with power-independent generation frequency. The relation between the nonlinearity-induced broadening of the generation linewidth and the nonlinearity-induced increase of the phase-locking band of a spin-torque oscillator to an external microwave signal has been revealed. The derived expression for the generation linewidth predicts a linewidth minimum when the nano-contact is magnetized at a certain angle to its plane, at which the nonlinear frequency shift vanishes. This result is in good agreement with recent experiments.