• Title, Summary, Keyword: RF magnetron sputtering

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Growth of p-ZnO by RF-DC magnetron co-sputtering (RF-DC magnetron co-sputtering법에 의한 p-ZnO 박막의 성장)

  • Kang Seung Min
    • Journal of the Korean Crystal Growth and Crystal Technology
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    • v.14 no.6
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    • pp.277-280
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    • 2004
  • p-ZnO films have been grown on (0001) sapphire substrates by RF-DC magnetron co-sputtering. The p-ZnO single crystalline thin films of the thickness about 120 nm were grown successfully. The dopant (Aluminum) was sputtered simultaneously from Al metal target by DC sputtering during rf-magnetron sputtering of ZnO at the substrate temperatures of $400^{\circ}C$ and $600^{\circ}C$ respectively. The crystallinity and optical properties of as-grown P-ZnO films have been characterized.

RF-enhanced DC-magnetron Sputtering of Indium Tin Oxide

  • Futagami, Toshiro;Kamei, Masayuki;Yasui, Itaru;Shigesato, Yuzo
    • The Korean Journal of Ceramics
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    • v.7 no.1
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    • pp.26-29
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    • 2001
  • Indium tin oxide (ITO) films were deposited on glass substrates at $300^{\circ}C$ in oxygen/argon mixtures by RF-enhanced DC-magnetron sputtering and were compared to those by conventional DC magnetron sputtering. The RF enhancement was performed using a coil above an ITO target. X-ray diffraction measurements revealed that RF-enhanced plasma affected the preferred orientation and the crystallinity of the films. The resistivity of the films prepared by RF-enhanced DC-magnetron sputtering was almost constant at oxygen content lower than 0.3% and then increased sharply with increasing oxygen content. However the resistivity of the films by conventional sputtering has little dependence on the oxygen content. Those results can be explained on the basis of the incorporation of oxygen into the ITO films due to the RF enhancement.

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Simulation and Characteristic Measurement with Sputtering Conditions of Triode Magnetron Sputter

  • Kim, Hyun-Hoo;Lim, Kee-Joe
    • Transactions on Electrical and Electronic Materials
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    • v.5 no.1
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    • pp.11-14
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    • 2004
  • An rf triode magnetron sputtering system is designed and installed its construction in vacuum chamber. In order to calibrate the rf triode magnetron sputtering for thin films deposition processes, the effects of different glow discharge conditions were investigated in terms of the deposition rate measurements. The basic parameters for calibrating experiment in this sputtering system are rf power input, gas pressure, plasma current, and target-to-substrate distance. Because a knowledge of the deposition rate is necessary to control film thickness and to evaluate optimal conditions which are an important consideration in preparing better thin films, the deposition rates of copper as a testing material under the various sputtering conditions are investigated. Furthermore, a triode sputtering system designed in our team is simulated by the SIMION program. As a result, it is sure that the simulation of electron trajectories in the sputtering system is confined directly above the target surface by the force of E${\times}$B field. Finally, some teats with the above 4 different sputtering conditions demonstrate that the deposition rate of rf triode magnetron sputtering is relatively higher than that of the conventional sputtering system. This means that the higher deposition rate is probably caused by a high ion density in the triode and magnetron system. The erosion area of target surface bombarded by Ar ion is sputtered widely on the whole target except on both magnet sides. Therefore, the designed rf triode magnetron sputtering is a powerful deposition system.

The Structures, Optical and Electrical Properties of IGZO Thin Films by RF Magnetron Sputtering According to RF Power (RF magnetron sputtering으로 증착한 IGZO 박막의 RF power에 따른 구조적, 광학적 및 전기적 특성 연구)

  • Yeon, Je ho;Kim, Hong Bae
    • Journal of the Semiconductor & Display Technology
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    • v.15 no.3
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    • pp.57-61
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    • 2016
  • We have studied the structural, optical and electrical properties of IGZO thin films. The IGZO thin films were deposited on the silicon wafer by RF magnetron sputtering method. The RF power in sputtering process was varied as 15W, 30W, 45W, 60W, 75W, respectively. All of the thin films transmittance in the visible range was above 85%. XRD analysis showed that amorphous structure of the thin films without any peak. The Hall measurements in the low RF power is the high mobility above $10cm^2/V{\cdot}s$ and the low resistvity are obtained in the IGZO thin films.

The optical and electrical properties of IGZO thin film fabricated by RF magnetron sputtering according to RF power (RF magnetron sputtering법으로 형성된 IGZO박막의 RF power에 따른 광학적 및 전기적 특성)

  • Zhang, Ya Jun;Kim, Hong Bae
    • Journal of the Semiconductor & Display Technology
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    • v.12 no.1
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    • pp.41-45
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    • 2013
  • IGZO transparent conductive thin films were widely used as transparent electrode of optoelectronic devices. We have studied the optical and electrical properties of IGZO thin films. The IGZO thin films were deposited on the corning 1737 glass by RF magnetron sputtering method. The RF power in sputtering process was varied as 25, 50, 75and 100 W, respectively. All of the thin films transmittance in the visible range was above 85%. XRD analysis showed that amorphous structure of the thin films without any peak. The thin films were electrically characterized by high mobility above $13.4cm^2/V{\cdot}s$, $7.0{\times}10^{19}cm^{-3}$ high carrier concentration and $6{\times}10^{-3}{\Omega}-cm$ low resistivity. By the studies we found that IGZO transparent thin film can be used as transparent electrodes in electronic devices.

Characteristic evaluations and production of triode magnetron sputtering system (Triode magnetron sputtering system의 제작 및 특성평가)

  • Kim, H.H.;Lee, M.Y.;Kim, K.T.;Yoon, S.H.;Yoo, H.K.;Kim, J.M.;Park, C.H.;Lim, K.J.
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • pp.787-790
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    • 2003
  • A rf triode magnetron sputtering system is designed and installed its construction in vacuum chamber. In order to calibrate the rf triode magnetron sputtering for thin films deposition processes, the effects of different glow discharge conditions were investigated in terms of the deposition rate measurements. The basic parameters for calibrating experiment in this sputtering system are rf power input, gas pressure, plasma current, and target-to-substrate distance. Because a knowledge of the deposition rate is necessary to control film thickness and to evaluate optimal conditions which are an important consideration in preparing better thin films, the deposition rates of copper as a testing material under the various sputtering conditions are investigated. Furthermore, a triode sputtering system designed in our team is simulated by the SIMION program. As a result, it is sure that the simulation of electron trajectories in the sputtering system is confined directly above the target surface by the force of $E{\times}B$ field. Finally, some teats with the above 4 different sputtering conditions demonstrate that the deposition rate of rf triode magnetron sputtering is relatively higher than that of the conventional sputtering system. This means that the higher deposition rate is probably caused by a high ion density in the triode and magnetron system. The erosion area of target surface bombarded by Ar ion is sputtered widely on the whole target except on both magnet sides. Therefore, the designed rf triode magnetron sputtering is a powerful deposition system.

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The effect of electrical properties by gas ratio on $Bi_{3.25}La_{0.75}Ti_3O_{12}$ thin films deposited by RF magnetron sputtering during being annealed (RF magnetron sputtering으로 제작한 BLT 박막의 후열처리 시 가스비 변화에 따른 전기적 특성에 관한 연구)

  • Lee, Kyu-Il;Kim, Eung-Kwon;Kang, Hyun-Il;Song, Joon-Tae
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • pp.49-52
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    • 2003
  • The role of gas ratio with the crystallization behavior and electrical properties in $Bi_{3.25}La_{0.75}Ti_3O_{12}$(BLT) thin films by rf magnetron sputtering method has not been precisely defined. In this work, the ferroelectric properties of these films with gas variation was investigated. BLT thin films were deposited on the Pt/Ti bottom electrode by rf magnetron sputtering method and then they were crystallized by rapid thermal annealing (RTA). The experiment showed that all BLT films indicated perovskite polycrystalline structure with preferred orientation (020) and (0012). And no pyrochlore phase was observed. The fabricated film annealed with $O_2$ of 15 sccm showed that value of leakage current was $9.67{\times}10^{-7}A/cm^2$ at 50kV /em, and the value of remanent polarization (2Pr=Pr+-Pr-) was $11.8{\mu}C/cm^2$. Therefore we induce access to memory device application by rf-magnetron sputtering method in this report.

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The Structure, Optical and Electrical Characteristics of AZO Thin Film Deposited on PET Substrate by RF Magnetron Sputtering Method (PET 기판 위에 RF magnetron sputtering으로 증착한 AZO 박막의 구조적, 광학적, 전기적 특성)

  • Lee, Yun seung;Kim, Hong bae
    • Journal of the Semiconductor & Display Technology
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    • v.15 no.4
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    • pp.36-40
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    • 2016
  • The 2 wt.% Al-doped ZnO(AZO) thin films were fabricated on PET substrates with various RF power 20, 35, 50, 65, and 80W by using RF magnetron sputtering in order to investigate the structure, electrical and optical properties of AZO thin films in this study. The XRD measurements showed that AZO films exhibit c-axis orientation. At a RF power of 80W, the AZO films showed the highest (002) diffraction peak with a FWHM of 0.42. At a RF power of 65W, the lowest electrical resistivity was about $1.64{\times}[10]$ ^(-4) ${\Omega}-cm$ and the average transmittance of all films including substrates was over 80% in visible range. Good transparence and conducting properties were obtained due to RF power control. The obtained results indicate that it is acceptable for applications as transparent conductive electrodes.

A Study on the Characteristics of Ti Films Deposited by a DC Magnetron Sputtering Assisted with RF Voltage (고주파 마그네트론 스퍼터장치로 증착한 Ti 박막의 특성에 관한 연구)

  • Bae, Chang-Hwan;Lee, Ju-Hee;Han, Chang-Suk
    • Journal of the Korean Society for Heat Treatment
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    • v.22 no.3
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    • pp.143-148
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    • 2009
  • We have fabricated Ti metal films on Cu wire substrates by using a RF magnetron sputtering method at different RF powers (0, 30 and 60 W) in a high vacuum, and we have investigated the thin film characteristics and resistivity. The ion bombardment effect is increased by the method to superimpose RF power to DC power applied to two poles of the base; thus, the thin film is deposited at sputtering gas pressures below 1 Pa. Moreover, the thin film formation of the multilayer structure becomes possible by gradually injecting the RF power, and the thin film quality is improved.