• Title, Summary, Keyword: RuO$_2$

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Effect of Deposition Temperature and Oxygen on the Growth of $RuO_2$ Thin Films Deposited by Metalorganic Chemical Vapor Deposition (금속유기 화학증착법으로 증착시킨 $RuO_2$박막의 성장에 미치는 증착온도와 산소의 영향)

  • 신웅철;윤순길
    • Journal of the Korean Ceramic Society
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    • v.34 no.3
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    • pp.241-248
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    • 1997
  • RuO2 thin films were deposited on SiO2(1000$\AA$)/Si and MgO(100) single crystal substrates at low tem-peratures by hot-wall metalorganic chemical vapor deposition(MOCVD), and effects of deposition paramet-ers on the properties of the thin films were investigated. RuO2 single phase was obtained at lower de-position temperature of 25$0^{\circ}C$. RuO2 thin films deposited onto SiO2(1000$\AA$)/Si substrates showed a random orientation, and RuO2 films onto MgO(100) single crystals showed the (hk0) orientation. The crystallinity and resistivity of RuO2 thin films increased and decreased with increasing deposition temperature, respec-tively. The resistivity of RuO2 thin films decreased with decreasing the flow rate. The resistivity of the 2600$\AA$-thick RuO2 thin films deposited with O2 flow rate of 50 sccm at 35$0^{\circ}C$ was 52.7$\mu$$\Omega$-cm, and they could be applicable to bottom electrodes of high dielectric materals.

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Electrical Properties of PZT Thin Films Deposited on the Ru/$RuO_2$ Metal/Oxide Hybrid Electrodes (Ru/$RuO_2$ 금속/산화물 이중전극 위에 증착한 PZT 박막의 전기적 특성)

  • Jeong, Kyu-Won;Park, Young;Song, Joon-Tae
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.14 no.4
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    • pp.281-288
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    • 2001
  • PZT thin films (3500$\AA$) have been prepard on the Ru/Ru $O_2$ and Ru $O_2$ bottom electrodes with a RF magnetron sputtering system using P $b_{1.05}$(Z $r_{0.52}$, $Ti_{0.48}$) $O_3$ ceramic target. Ru/Ru $O_2$ bottom electrode was fabricated by in-situ processing controlled the $O_2$ partial pressure. The PZT thin films deposited on the Ru/Ru $O_2$ bottom electrode were preferred oriented (101) plane. The PZT thin films deposited on the Ru/Ru $O_2$ bottom electrodes showed better electrical properties than those with Ru $O_2$ bottom electrodes because Ru $O_2$ prevented oxygen vacancies and impurities from existing withing the interface and substrate.e.

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Fabrication and Physical Properties of $RuO_2$ Thin Films ($RuO_2$ 박막의 제조와 물성)

  • 서동주;이재연;김건호
    • Journal of the Korean Vacuum Society
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    • v.3 no.4
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    • pp.442-448
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    • 1994
  • 용액분무법으로 RuO2 박막을 석영 기판위에 성장시켰다. RuO2 박막의 결정구조는 정방 구조이 며 격자상수 a0=4.508 A, c0=3.092 A 이였다. RuO2 박막은 금속성 전도성을 나타냈다. RuO2박마의 광흡 수도는 후열처리함에 따라 증가하였고 박막의 광흡수도의 최소값은 후열처리 온도에 의존하지 않으며 에너지로 환산하면 ∼2.0eV로 거의 일정하였다. RuO2 박막의 후열처리의 온도와 후열처리 분위기가 기 판위에 성장된 RuO2 박막의 표면형태 grain 크기 grain 경계폭 전기적특성등에 영향을 미쳤다. RuO2 박 막이 실험실내의 공기중에 노출됨으로서 시료의 표면에 S와 C가 물리 흡착되었으며 sputtering 시간이 증가함에 따라 Ar+ 이온 빔의 충겨으로 RuO2가 부분적으로 환원되어 O원자의 피크 대 피크 높이가 감 소하여 O/Ru 의피크 높이의 비가 낮게 관측되었다.

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Effect of RuO$_2$ Thin Film Microstructure on Characteristics of Thin Film Micro-supercapacitor ($RuO_2$박막의 미세 구조가 박막형 마이크로 슈퍼캐패시터의 특성에 미치는 영향)

  • Kim, Han-Ki;Yoon, Young-Soo;Lim, Jae-Hong;Cho, Won-Il;Seong, Tae-Yeon;Shin, Young-Hwa
    • Korean Journal of Materials Research
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    • v.11 no.8
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    • pp.671-678
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    • 2001
  • All solid-state thin film micro supercapacitor, which consists of $RuO_2$/LiPON/$RuO_2$ multi layer structure, was fabricated on Pt/Ti/Si substrate using a $RuO_2$ electrode. Bottom $RuO_2$ electrode was grown by dc reactive sputtering system with increasing $O_2/[Ar+O_2]$ ratio at room temperature, and a LiPON electrolyte film was subsequently deposited on the bottom $RuO_2$ electrode at pure nitrogen ambient by rf reactive sputtering system. Room temperature charge-discharge measurements based on a symmetric $RuO_2$/LiPON/$RuO_2$ structure clearly demonstrates the cyclibility dependence on the microstructure of the $RuO_2$ electrode. Using both glancing angle x-ray diffraction (GXRD) and transmission electron microscopy (TEM) analysis, it was found that the microstructure of the $RuO_2$ electrode was dependent on the oxygen flow ratio. In addition, x- ray photoelectron spectroscopy(XPS) examination shows that the Ru-O binding energy is affected by increasing oxygen flow ratio. Furthermore, TEM and AES depth profile analysis after cycling demonstrates that the interface layer formed by interfacial reaction between LiPON and $RuO_2$ act as a main factor in the degradation of the cyclibility of the thin film micro-supercapacitor.

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Characteristics of $RuO_2$/n-GaN Schottky Diode ($RuO_2$/n-GaN 구조의 Schottky Diode 특성)

  • Kim, Dong-Sik
    • 전자공학회논문지 IE
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    • v.46 no.3
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    • pp.1-5
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    • 2009
  • In this paper, we study the electrical characteristics of $RuO_2$/n-GaN Schottky diodes fabricated by using electrochemical metallization. The solution for GaN Schottky electrodes of $RuO_2$ is perchloric acid($HClO_4$). Thickness of $RuO_2$ layer depend on supplied voltage and dipping time. We verified the possibility of the rectifying and non-rectifying devices' electrode which was depend on the thickness of $RuO_2$ layer.

Thermal Stability of $\textrm{RuO}_2$ Thin Film Annealed at High Temperature in Oxygen Atmosphere ($\textrm{RuO}_2$ 박막의 산소 분위기 열처리시 열적 안정성에 관한 연구)

  • O, Sang-Ho;Park, Chan-Gyeong;Baek, Hong-Gu
    • Korean Journal of Materials Research
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    • v.8 no.12
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    • pp.1090-1098
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    • 1998
  • $RuO_2$ thin films were deposited on Si and Ru/Si substrates by rf magnetron reactive sputtering and annealed in oxygen atmosphere(1atm) to investigate their thermal stability and diffusion barrier property. $RuO_2$ thin films were thermally stable up to 700\ulcorner for 10min. in oxygen atmosphere and showed excellent barrier property against the interdiffusion of silicon and oxygen. After annealing at $750^{\circ}C$ , however, volatilization to higher oxide occurred at the surface and inside of $RuO_2$ thin film and diffusion barrier property was also deteriorated. When annealed at $800^{\circ}C$, $RuO_2$thin film showed a different microstructure from that of $RuO_2$ thin film annealed at 75$0^{\circ}C$. It is likely that surface defect structure of $RuO_2$, $RuO_3$, and excess oxygen had an influence on the mode of volatilization with increasing annealing temperature.

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Characterization of $RuO_2$ Thin Films by Hot-wall Metal Organic Chemical Vapor Deposition (Hot-wall MOCVD에 의한 $RuO_2$ 박막의 특성)

  • 신웅철;윤순길
    • Journal of the Korean Ceramic Society
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    • v.33 no.9
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    • pp.969-976
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    • 1996
  • RuO2 thin films were deposited on SiO2(1000 $\AA$)/Si by hot-wall Metal Organic Chemical Vapor Depositon. The crystallinity of RuO2 thin films increased with increasing deposition temperature and the preferred orienta-tion of RuO2 films converted (200) plane to (101) plane with increasing film thicknesses. Such a change in preferred orientation was influenced on the crystallographic structure and the residual stress of RuO2 thin films. The resistivity of the 2700$\AA$-thick RuO2 thin films deposted at 30$0^{\circ}C$ was 52.7$\mu$$\Omega$-cm and they could be applicable to bottom electrodes of high dielectric materials. However the resistivity of RuO2 thin films increased with decreasing film thicknesses. The grain size and the resistivity of RuO2 thin films were densified with increasing the annealing temperature and showed the decrease of resistivity.

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A Study on the Plasma Etching of Ru Electrodes using $O_2/Cl_2$ Helicon Discharges

  • Kim, Hyoun-Woo;Hwang, Woon-Suk
    • Corrosion Science and Technology
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    • v.2 no.4
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    • pp.189-193
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    • 2003
  • The Ru etching using $O_2/C_{12}$ plasmas has been studied by employing the helicon etcher. The changes of Ru etch rate, Ru to $SiO_2$ etch selectivity and Ru electrode etching slope with varied process variables were investigated. The Ru etching slope at the optimized etching condition was measured to be $84^{\circ}$. We reveal that the Ru etching using $O_2/C_{12}$ plasma generates the $RuO_2$ thin film. Possible mechanism of Ru etching is discussed.

Properties of sputtering PZT thin film on the Ru/$RuO_2$electrode (Ru/$RuO_2$전극에 성장한 PZT박막의 특성에 관한연구)

  • 강현일;최장현;이종덕;송준태
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • pp.717-720
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    • 2001
  • Ferroelectric lead ziroconate titanate (PZT) thin film were fabricated on the different bottom electrodes. Both Ru and Ru/RuO$_2$bottom electrodes were deposited by RF-magnetron sputteirng method. The structure phase and surface morphology of the PZT thin film were largely affected by the bottom electrode. It was observerd that used of Ru/RuO$_2$double electrode reduced leakage current and better ferroelectric properties compare with RuO$_2$bottom electrode. From these results, Ru/RuO$_2$hybride bottom electrode is thought to be the available structure for the bottom electrode.

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Study on the Structural and Transporting Property of Sr2Ru1-xCuxO4-y(0.0≤x≤0.5) (Sr2Ru1-xCuxO4-y(0.0≤x≤0.5) 화합물의 구조 및 전달 특성에 대한 연구)

  • Park, Jung-Chul
    • Journal of the Korean Chemical Society
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    • v.47 no.6
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    • pp.614-618
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    • 2003
  • $Sr_2Ru_{1-x}Cu_xO_{4-y}(0.0{\le}x{\le}0.5)$ compounds were prepared using a conventional solid state reaction. Based on the Rietveld refinements of X-ray diffraction results, it is revealed that $Sr_2Ru_{1-x}Cu_xO_{4-y}$ compounds are the single phases with K2NiF4 type tetragonal system in the range of 0=x=0.3, while the mixed phases of$Sr_2RuO_4$ and $Sr_2CuO_3$ in the range of $0.4{\le}x{\le}0.5$. By means of X-ray photoelectron spectroscopy, the valence states of Ru and Cu in $Sr_2Ru_{1-x}Cu_xO_{4-y}$, have been confirmed to 4+ and 2+, respectively. The bond length difference between $Ru-O_1 ({\times}4)\;and\;Ru-O_2 ({\times}2)\;in\;RuO_6$ octahedron is gradually decreased with increasing Cu content in $Sr_2Ru_{1-x}Cu_xO_{4-y}$, which results in the lower c/a ratio. So, it might be assured that the variation of local symmetry of $RuO_6$ octahedron is very closely related to the transporting property of $Sr_2Ru_{1-x}Cu_xO_{4-y}$ compounds. The behavior of resistivity discloses that the metallic property in $Sr_2RuO_4$ changes into the semiconducting one in proportion to the Cu content in $Sr_2Ru_{1-x}Cu_xO_{4-y}$.